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1. 发明专利

JP2008211247A Marker structure for lithography, lithographic projection apparatus including such marker structure, and method for substrate alignment using such a marker structure 有权
标题翻译：用于平面图的标记结构，包括这种标记结构的平面投影装置以及使用这种标记结构的基板对准方法
公开(公告)号：JP2008211247A
公开(公告)日：2008-09-11
申请号：JP2008119913
申请日：2008-05-01
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： VAN HAREN RICHARD JOHANNES FRA , HINNEN PAUL CHRISTIAAN , LALBAHADOERSING SANJAY , MEGENS HENRY , VAN DER SCHAAR MAURITS
IPC分类号： G01B11/00 , H01L21/027 , G01B11/02 , G01B21/00 , G02B5/18 , G03F7/00 , G03F7/20 , G03F9/00 , G03F9/02 , H01L21/3205 , H01L21/68 , H01L23/52 , H01S3/00
CPC分类号： G03F9/7084 , G03F9/7046 , G03F9/7049 , G03F9/7076 , G03F9/7088 , G03F9/7092
摘要： PROBLEM TO BE SOLVED: To provide a marker structure on a substrate for optical alignment of the substrate including a plurality of first structural elements and a plurality of second structural elements. SOLUTION: For use, the marker structure enables optical alignment by providing at least one light beam directed on the marker structure, detecting light received from the marker structure via a sensor, and obtaining alignment information from the detected light, the alignment information including information relating a substrate position to the sensor. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了在包括多个第一结构元件和多个第二结构元件的基板的光学对准的基板上提供标记结构。解决方案：为了使用，标记结构通过提供指向标记结构的至少一个光束来实现光学对准，通过传感器检测从标记结构接收的光，以及从检测到的光获得对准信息，对准信息包括将衬底位置与传感器相关的信息。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007214560A Marker structure for lithography, lithographic projection device provided with such marker structure for lithography, and method of aligning substrate using such marker structure for lithography 有权
标题翻译：用于平面图的标记结构，具有这样的标记结构的平面投影装置，以及使用这种标记结构对基底进行刻蚀的方法
公开(公告)号：JP2007214560A
公开(公告)日：2007-08-23
申请号：JP2007009156
申请日：2007-01-18
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： VAN HAREN RICHARD JOHANNES FRA , HINNEN PAUL CHRISTIAAN , LALBAHADOERSING SANJAY , MEGENS HENRY , VAN DER SCHAAR MAURITS
IPC分类号： G01B11/00 , H01L21/027 , G01B11/02 , G01B21/00 , G02B5/18 , G03F7/00 , G03F7/20 , G03F9/00 , G03F9/02 , H01L21/3205 , H01L21/68 , H01L23/52 , H01S3/00
CPC分类号： G03F9/7084 , G03F9/7046 , G03F9/7049 , G03F9/7076 , G03F9/7088 , G03F9/7092
摘要： PROBLEM TO BE SOLVED: To provide a marker structure that allows correction of a phase depth in such a way that negative interference within a diffraction pattern is prevented, a lithographic projection device provided with such a marker structure for lithography, and a method of aligning a substrate using such a marker structure for lithography. SOLUTION: The marker structure is characterized in that: a first structural element has a first reflecting surface on a first level; a second structural element is substantially non-reflecting; a second reflecting surface is disposed on a second level lower than the first level, wherein a separation between the first and second reflecting surfaces determines a phase depth condition for the detected light; and recesses R1, R2, R3 are provided in the second reflecting surface; thereby modifying the phase depth condition. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种标记结构，其允许校正相位深度，使得防止衍射图案中的负干涉，设置有这种用于光刻的标记结构的光刻投影装置和方法使用这种用于光刻的标记结构来对准衬底。标记结构的特征在于：第一结构元件在第一层上具有第一反射表面; 第二结构元件基本上不反射; 第二反射表面设置在比第一水平低的第二水平面上，其中第一和第二反射表面之间的间隔确定检测到的光的相位深度状态; 并且凹部R1，R2，R3设置在第二反射面上; 从而修改相位深度条件。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2007142419A Binary sine sub wavelength grating as alignment mark 有权
标题翻译：二进制正弦波纹波作为对准标记
公开(公告)号：JP2007142419A
公开(公告)日：2007-06-07
申请号：JP2006308751
申请日：2006-11-15
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： VAN HAREN RICHARD JOHANNES FRA , MUSA SAMI
IPC分类号： H01L21/027 , G03F9/00
CPC分类号： G03F9/7049 , G03F9/7076 , G03F9/7088
摘要： PROBLEM TO BE SOLVED: To apply a two-dimensional photonic crystal to an alignment device.
SOLUTION: An alignment mark for use on a substrate has a structure of a periodical two-dimensional array. An interval between lines of the array of the structure is smaller than the size of an alignment radiation beam, but larger than an exposure beam, and width of the lines is sinusoidally changed from one end to the other end of the array.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：将二维光子晶体应用于对准装置。解决方案：用于衬底的对准标记具有周期性二维阵列的结构。结构的阵列的线之间的间隔小于对准辐射束的尺寸，但大于曝光光束，并且线的宽度从阵列的一端正弦变化。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2007053407A Substrate provided with lineup mark in substantially transparent process layer, mask for exposing mark, method of manufacturing device, and device manufactured thereby 有权
标题翻译：在大量透明工艺层中提供带有标记的衬底，用于暴露标记的掩模，制造器件的方法以及制造的器件
公开(公告)号：JP2007053407A
公开(公告)日：2007-03-01
申请号：JP2006311462
申请日：2006-11-17
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： VAN HAREN RICHARD JOHANNES FRA
IPC分类号： G03F1/08 , H01L21/027 , G03F7/20 , G03F9/00
CPC分类号： G03F9/7088 , G03F7/70633 , G03F9/7076 , H01L22/34 , H01L2223/54426 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a substrate having a mark whose position measurement accuracy is not deteriorated by the interference of a radiation reflected by the mark with the radiation returned to the mark after passing through a transparent layer and reflected on the surface of the substrate, when exposing the substrate having the transparent process layer with a mask in a lithography projection device at the time of irradiating a lineup mark provided in the transparent layer for arranging the substrate with lineup beam of the radiation. SOLUTION: Lineup marks P 1 and P 2 in the transparent process layer of the substrate W include a region 3 of high reflection factor for reflecting the radiation of the lineup beam and region 1 of low reflection factor reflecting little radiation, and scattering structure 5 for scattering radiation of the lineup beam into the low reflection factor region and absorbing. Accordingly, it is rare that the lineup system is disturbed by the interference. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有标记的基板，其位置测量精度不会因通过透明层并在表面上反射之后被标记反射的辐射与返回到标记的辐射的干扰而劣化当在照射设置在透明层中的阵列标记时，在光刻投影装置中将具有透明处理层的基板用掩模曝光，用于将基板与放射线的阵列一起布置。解决方案：衬底W的透明工艺层中的阵列标记P 1 和P 2 包括用于反映阵容辐射的高反射系数的区域3 光束和区域1的低反射系数反映少量辐射，散射结构5用于将阵容射线散射到低反射因子区域并吸收。因此，阵容系统很少受到干扰的干扰。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2009069163A Alignment system and methods for lithographic systems 有权
标题翻译： LITHOGRAPHIC系统的对准系统和方法
公开(公告)号：JP2009069163A
公开(公告)日：2009-04-02
申请号：JP2008307147
申请日：2008-12-02
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： VAN BILSEN FRANCISCUS BERNARDU , BURGHOORN JACOBUS , VAN HAREN RICHARD JOHANNES FRA , HINNEN PAUL CHRISTIAAN , VAN HORSSEN HERMANUS GERARDUS , HUIJBREGTSE JEROEN , JUENINK ANDRE BERNARDUS , MEGENS HENRY , NAVARRO Y KOREN RAMON , TOLSMA HOITE PIETER THEODOOR , HUBERTUS JOHANNES GERTRUDUS SI , SCHUURHUIS JOHNY RUTGER , SCHETS SICCO IAN , LEE BRIAN , DUNBAR ALLAN
IPC分类号： G01B11/00 , G01B11/02 , G01B21/00 , G02B5/18 , G03F7/00 , G03F7/20 , G03F9/00 , G03F9/02 , H01L21/027 , H01L21/3205 , H01L21/68 , H01L23/52 , H01S3/00
CPC分类号： G03F9/7084 , G03F9/7046 , G03F9/7049 , G03F9/7076 , G03F9/7088 , G03F9/7092
摘要： PROBLEM TO BE SOLVED: To provide an alignment system for a lithography projecting device, with the accuracy of positioning and/or robust properties improved. SOLUTION: An alignment system for a lithographic apparatus has a source of alignment radiation, a detection system that has a first detector channel and a second detector channel, and a position determining unit that communicates with the detection system. The position-determining unit processes information from the first and second detector channels in combination and determines the position of an alignment mark on a first object relative to a reference position on a second object, based on the combined information. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供用于光刻投影装置的对准系统，其具有改善的定位精度和/或鲁棒特性。解决方案：用于光刻设备的对准系统具有对准辐射源，具有第一检测器通道和第二检测器通道的检测系统以及与检测系统通信的位置确定单元。位置确定单元组合地处理来自第一和第二检测器通道的信息，并且基于组合的信息确定相对于第二对象上的参考位置的第一对象上的对准标记的位置。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008098634A Method, alignment mark and usage of hard mask material 有权
标题翻译：方法，对准标记和硬掩模材料的使用
公开(公告)号：JP2008098634A
公开(公告)日：2008-04-24
申请号：JP2007259342
申请日：2007-10-03
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： VAN HAREN RICHARD JOHANNES FRA , MOS EVERHARDUS CORNELIS
IPC分类号： H01L21/027
CPC分类号： G03F9/7084 , G03F9/708 , H01L21/3212 , H01L23/544 , H01L2223/54426 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method for preparing an alignment mark with no flaw, without requiring application of a conventional oxide buff method.
SOLUTION: An oxide layer and a sacrificial layer are processed to constitute a recessed part. The recessed part is filled with a filling material. While the recessed part is being filled, a filling material layer is formed on the sacrificial layer. The filling material layer is removed by chemical-mechanical polishing. While filling the recessed part and removing the filling material layer, the oxide layer is protected by the sacrificial layer. Next, the sacrificial layer is removed by etching. As a result, the oxide layer without flaws which includes protrusions is provided. The oxide layer including the protrusion is covered with a conductive layer, and thereby the protrusions penetrate the oxide layer, and related protrusions are formed. As a result of these related protrusions, the alignment mark is formed.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种无需使用常规氧化物抛光方法制备无缺陷的对准标记的方法。解决方案：处理氧化物层和牺牲层以构成凹部。凹陷部分填充有填充材料。当凹部被填充时，在牺牲层上形成填充材料层。通过化学机械抛光除去填充材料层。在填充凹部并去除填充材料层的同时，氧化物层被牺牲层保护。接下来，通过蚀刻去除牺牲层。结果，提供了包括突起的没有缺陷的氧化物层。包括突起的氧化物层被导电层覆盖，从而突起穿过氧化物层，形成相关的突起。作为这些相关突起的结果，形成对准标记。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2008034878A Alignment system of lithographic equipment, and method 审中-公开
标题翻译：立体设备对准系统及方法
公开(公告)号：JP2008034878A
公开(公告)日：2008-02-14
申请号：JP2007267899
申请日：2007-10-15
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： VAN BILSEN FRANCISCUS BERNARDU , BURGHOORN JACOBUS , VAN HAREN RICHARD JOHANNES FRA , HINNEN PAUL CHRISTIAAN , VAN HORSSEN HERMANUS GERARDUS , HUIJBREGTSE JEROEN , JUENINK ANDRE BERNARDUS , MEGENS HENRY , NAVARRO Y KOREN RAMON , TOLSMA HOITE PIETER THEODOOR , HUBERTUS JOHANNES GERTRUDUS SI , SCHUURHUIS JOHNY RUTGER , SCHETS SICCO IAN , LEE BRIAN , DUNBAR ALLAN
IPC分类号： G01B11/00 , H01L21/027 , G01B11/02 , G01B21/00 , G02B5/18 , G03F7/00 , G03F7/20 , G03F9/00 , G03F9/02 , H01L21/3205 , H01L21/68 , H01L23/52 , H01S3/00
CPC分类号： G03F9/7084 , G03F9/7046 , G03F9/7049 , G03F9/7076 , G03F9/7088 , G03F9/7092
摘要： PROBLEM TO BE SOLVED: To provide an alignment system for lithographic projection equipment in which the accuracy and/or robust property of alignment are improved. SOLUTION: The alignment system of the lithographic equipment includes an aligning radiation source 1, a detection system having a first detector channel and a second detector channel, and an alignment unit communicated with the detection system. The alignment unit determines the position of an alignment mark on a first object for a reference position on a second object based on a combined information that is combined and processed the information from the first and second detection channels. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于光刻投影设备的对准系统，其中对准的精度和/或鲁棒性能得到改善。解决方案：光刻设备的对准系统包括对准辐射源1，具有第一检测器通道和第二检测器通道的检测系统以及与检测系统连通的对准单元。对准单元基于组合和处理来自第一和第二检测通道的信息的组合信息，确定第一对象上的对准标记在第二对象上的参考位置的位置。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2007300076A Alignment tool for lithographic apparatus 有权
标题翻译：对准设备的对准工具
公开(公告)号：JP2007300076A
公开(公告)日：2007-11-15
申请号：JP2007072461
申请日：2007-03-20
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： MUSA SAMI , VAN HAREN RICHARD JOHANNES FRA , SCHAAR MAURITS VAN DER
IPC分类号： H01L21/027 , G01B11/00 , G03F9/00 , H01L21/68
CPC分类号： G03F9/7049 , G03F9/7015 , G03F9/7088
摘要： PROBLEM TO BE SOLVED: To provide a firmer, simpler and cheaper method for deflecting a diffracted alignment beam. SOLUTION: An alignment tool illuminates an alignment mark P1 on a substrate W with an alignment beam, and measures a reflection spectrum. The reflection spectrum is compared with reference marks G91, G93, and G96 to determine presence or absence of a misalignment. A brazed sub-wavelength grating 10 is used to deflect sub-beams created by diffracting the alignment beam from the alignment mark P1 onto the reference marks G91, G93, and G96. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供用于偏转衍射对准光束的更坚实，更简单和更便宜的方法。解决方案：对准工具用对准光照射衬底W上的对准标记P1，并测量反射光谱。将反射光谱与参考标记G91，G93和G96进行比较，以确定是否存在未对准。钎焊的亚波长光栅10用于将通过将对准光束从对准标记P1衍射衍射而产生的子光束偏转到参考标记G91，G93和G96上。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2006140500A Marker structure to control positioning each layer of multi-layer substrate and its method 有权
标题翻译：控制多层基板各层定位的标记结构及其方法
公开(公告)号：JP2006140500A
公开(公告)日：2006-06-01
申请号：JP2005327563
申请日：2005-11-11
申请人： Asml Netherlands Bv , エイエスエムエルネザランドズベスローテンフエンノートシャップ
发明人： VAN HAREN RICHARD JOHANNES FRA , DEN BOEF ARIE JEFFREY , BURGHOORN JACOBUS , VAN DER SCHAAR MAURITS , RIJPERS BARTOLOMEUS P
IPC分类号： H01L21/027 , G03F9/00
CPC分类号： H01L23/544 , G03F7/70633 , G03F9/7049 , G03F9/7065 , G03F9/7076 , G03F9/7092 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a marker structure to be used by a lithography system which is equipped with a first radiant source to produce a radiation having a first wavelength and a positioning system which includes a second radiant source to produce a radiation having a second wavelength. SOLUTION: The second wavelength is larger than the first wavelength. The marker structure is equipped with the first layer and the second layer. The second layer directly or indirectly exists on the first layer. The first layer has a first periodic structure, and the second layer has a second periodic structure. At least the other periodic structure has a plurality of features having a size smaller than 400 nm at least in one direction. The combination of the first periodic structure and the second periodic structure forms a diffraction structure which is composed to be illuminated by a radiation having the second wavelength. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种由光刻系统使用的标记结构，其被配备有第一辐射源以产生具有第一波长的辐射和定位系统，该定位系统包括第二辐射源以产生辐射具有第二波长。
解决方案：第二波长大于第一波长。标记结构配备有第一层和第二层。第二层直接或间接存在于第一层上。第一层具有第一周期性结构，第二层具有第二周期性结构。至少另一个周期性结构具有至少在一个方向上具有小于400nm的尺寸的多个特征。第一周期结构和第二周期结构的组合形成衍射结构，该衍射结构被具有第二波长的辐射照射。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2003092257A SUBSTRATE PROVIDED WITH ALIGNMENT MARK IN SUBSTANTIALLY TRANSMISSIVE PROCESS LAYER, MASK FOR EXPOSING THE MARK, DEVICE MANUFACTURING METHOD, AND DEVICE MANUFACTURED THEREBY 审中-公开
公开(公告)号：JP2003092257A
公开(公告)日：2003-03-28
申请号：JP2002182181
申请日：2002-05-20
申请人： ASML NETHERLANDS BV
发明人： VAN HAREN RICHARD JOHANNES FRA
IPC分类号： G03F1/08 , G03F7/20 , G03F9/00 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a substrate comprising a mark whereby, between radiation reflected on the mark and radiation which passes through a transmissive layer, is reflected on a surface of a substrate, and returns to the mark, interference is prevented from degrading the accuracy of measuring a mark position in the case where the substrate having a transmissive process layer is exposed with a mask by using a lithography projection aligner, when an alignment mark in the transmissive layer is irradiated with an alignment beam of radiation for aligning the substrate. SOLUTION: Alignment marks P1 and P2 , provided in the transmissive process layer of the substrate W include high reflectance areas 3 for reflecting radiation of the alignment beam and low reflectance areas 1 for reflecting only little radiation. Since the low reflectance areas include scattering structures 5 which scatter and absorb the radiation of the alignment beam, an alignment system is less prone to interruptions caused by interference.

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