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1. 发明专利

SG191313A1 INSULATION STRUCTURE AND METHOD FOR MANUFACTURING SAME 未知
公开(公告)号：SG191313A1
公开(公告)日：2013-08-30
申请号：SG2013048491
申请日：2011-12-22
申请人： ASAHI KASEI E MATERIALS CORP
发明人： DOI ICHIRO , TAKADA SHOZO , MISHIMA REIKO , SAITO HIDEO
摘要： INSULATING STRUCTURE AND PRODUCTION METHOD OF SAME TECHNICAL FIELDAn insulating structure is formed that favorably maintains gap-fill capability of a narrow width pattern 5 in a memory cell while also preventing the formation of cracks in an insulator in a peripheral circuit, and has the memory cell and peripheral circuit within the same layer. The present invention provides an insulating structure comprising a substrate and a circuit pattern 10 formed on the substrate, wherein the circuit pattern has a narrow width region having a narrow width pattern of a width of 30 nm or less and a wide width region having a wide width pattern of a width of greater than 100 nm in the same layer, and the same insulating composition is 15 formed within the narrow width pattern and within the wide width pattern.Figure 1

2. 发明专利

SG187800A1 PHOTOSENSITIVE SILICONE RESIN COMPOSITION 未知
公开(公告)号：SG187800A1
公开(公告)日：2013-04-30
申请号：SG2013010046
申请日：2011-06-15
申请人： ASAHI KASEI E MATERIALS CORP
发明人： TSUGANE NATSUMI , SAITO HIDEO , KUSAKABE TORU , NAKAMICHI MOTONORI
摘要： PHOTOSENSITIVE SILICONE RESIN COMPOSITIONProvided is a resin composition which gives a cured product of a photocurable resin having excellent crackresistance even when formed into a thick film, and capable of maintaining a low coefficient of linear thermal expansion, low thermal weight loss, and a low cure shrinkage. This photosensitive silicone resin composition comprises (A) a silica particle-containing10 condensation reaction product and (B) a photopolymerization initiator, and is characterized inthat the silica particle- containing condensation reaction product (A) is a condensation reaction product of a polysiloxane compound (a) comprising a hydrolytic15 condensation product of one or more silane compoundsrepresented by the following general formula (1): RI,IISiX141 (wherein Rl, n1 and X1 are defined in the claims) and/or the silane compound, and silica particles (b), and has a terminal structure Si-O-Y (wherein Y is20 defined in the claims) which satisfies the followingformula (2): 0

3. 发明公开

EP2447303A4 PRODUCT OF POLYSILOXANE CONDENSATION 审中-公开
标题翻译：聚硅氧烷的凝聚产物
公开(公告)号：EP2447303A4
公开(公告)日：2012-10-10
申请号：EP10792179
申请日：2010-06-24
申请人： ASAHI KASEI E MATERIALS CORP
发明人： MORIYAMA REIKO , SAITO HIDEO , TAKADA SYOUZOU , DOI ICHIROU
IPC分类号： C08G77/44 , C08L83/04 , C09D183/10 , H01L21/312 , H01L21/76
CPC分类号： C08L83/04 , C08G77/02 , C08G77/04 , C08K3/36 , C08K2201/016 , H01L21/02123 , H01L21/02208 , H01L21/02282 , H01L21/3121 , H01L51/448 , Y10T428/31663 , C08L83/00
摘要： Provided is a condensation reaction product solution which is particularly suitable for filling a trench formed on a substrate having a narrow width and a high aspect ratio. The condensation reaction product solution has a long pot life, superior trench-filling when used for trench-filling, and a low cure shrinkage, an excellent crack resistance and a HF resistance when cured and converted into silicon oxide. The condensation reaction product solution comprises (I) a condensation reaction product obtained by condensation reaction from a condensation component comprising (i) 40% by mass or more and 99% by mass or less in equivalent of condensate of polysiloxane compound derived from silane compounds represented by the general formula (1) : R 1 n SiX 1 4-n (wherein n is an integer of 0 to 3, R 1 is hydrogen atom or a C 1-10 hydrocarbon group, and X 1 is a halogen atom, a C 1-6 alkoxy group or acetoxy group) and (ii) 1% by mass or more and 60% by mass or less of silica particles, and (II) a solvent, wherein the silane compounds represented by the general formula (1) are two or more types of silane compounds comprising a tetrafunctional silane compound which corresponds to the case of n = 0 in the general formula (1) and a trifunctional silane compound which corresponds to the case of n = 1 in the general formula (1).
摘要翻译：提供了一种缩合反应产物溶液，其特别适于填充形成在具有窄宽度和高纵横比的基底上的沟槽。缩合反应产物溶液具有长的适用期，用于沟槽填充时具有优异的沟槽填充性，并且固化和转化为氧化硅时具有低固化收缩率，优异的抗裂性和耐HF性。缩合反应产物溶液包含（I）缩合反应产物，该缩合反应产物由缩合组分缩合反应得到，该缩合反应产物包含（i）40质量％以上且99质量％以下，相当于来源于硅烷化合物的聚硅氧烷化合物的缩合物通式（1）表示：R 1 n SiX 1 4-n（n为0〜3的整数，R 1为氢原子或C 1-10烃基，X 1为卤素原子， C 1-6烷氧基或乙酰氧基）和（ii）1质量％以上且60质量％以下的二氧化硅粒子，和（II）溶剂，其中由通式（1）表示的硅烷化合物是通式（1）中与n = 0的情况相对应的四官能性硅烷化合物和通式（1）中n = 1的情况下的三官能性硅烷化合物的两种以上的硅烷化合物，。

4. 发明公开

EP2604644A4 PHOTOSENSITIVE SILICONE RESIN COMPOSITION 审中-公开
标题翻译：光敏组合物中硅氧烷树脂
公开(公告)号：EP2604644A4
公开(公告)日：2015-10-28
申请号：EP11816265
申请日：2011-06-15
申请人： ASAHI KASEI E MATERIALS CORP
发明人： TSUGANE NATSUMI , SAITO HIDEO , KUSAKABE TORU , NAKAMICHI MOTONORI
IPC分类号： C08G77/20 , C08F299/08 , C08G77/14 , C08L83/06 , C08L83/07 , G03F7/075
CPC分类号： C08L83/00 , C08F299/08 , C08G77/14 , C08G77/20 , C08K5/0025 , C08K9/06 , G03F7/0047 , G03F7/0757 , C08L83/04 , C08L83/06

5. 发明专利

JP2014057074A Condensation reaction product for filling polysiloxane-based trench and method for manufacturing trench filling film 有权
标题翻译：用于填充基于聚硅氧烷的凝胶的凝结反应产物和用于制造TRENCH填充膜的方法
公开(公告)号：JP2014057074A
公开(公告)日：2014-03-27
申请号：JP2013207722
申请日：2013-10-02
申请人： Asahi Kasei E-Materials Corp , 旭化成イーマテリアルズ株式会社
发明人： MISHIMA REIKO , SAITO HIDEO , TAKADA SHOZO
IPC分类号： H01L21/316 , B82Y30/00 , C08G77/44 , H01L21/76
摘要： PROBLEM TO BE SOLVED: To provide: a condensation reaction product for filling a trench, a solution of which having good storage stability, the solution being suitable for using for filling the trench formed in a substrate with silicon oxide, having high filling performance, permitting formation of a thick film, and having good crack resistance; and a method for manufacturing a trench filling film.SOLUTION: A condensation reaction product for filling a trench contains a condensation reaction product of a polysiloxane compound and silica particles, and a mixed solvent or an organic solvent (C), the mixed solvent comprising an organic solvent (A) having a vapor pressure of 530 Pa or above at 20°C and a boiling point of 80°C or above and below 130°C and an organic solvent (B) having a vapor pressure of below 530 Pa at 20°C and a boiling point of 130°C or above and 200°C or below, and the organic solvent (C) having a vapor pressure of 530 Pa or above at 20°C and a boiling point of 130°C or above and 200°C or below.
摘要翻译：要解决的问题：提供：用于填充沟槽的缩合反应产物，其溶液具有良好的储存稳定性，该溶液适合于用氧化硅填充形成在衬底中的沟槽，具有高填充性能，允许形成厚膜，具有良好的抗裂性; 和沟槽填充膜的制造方法。解决方案：用于填充沟槽的缩合反应产物包含聚硅氧烷化合物和二氧化硅颗粒以及混合溶剂或有机溶剂（C）的缩合反应产物，所述混合溶剂包含在20℃，沸点为80℃以上且低于130℃下蒸气压为530Pa以上的有机溶剂（A）和在20℃下蒸气压低于530Pa的有机溶剂（B）和沸点为130℃以上且200℃以下的蒸发压为530Pa以上，沸点为130℃以上的有机溶剂（C）和 200℃以下。

6. 发明专利

JP2013163789A Photosensitive silicone resin composition 审中-公开
标题翻译：感光硅树脂组合物
公开(公告)号：JP2013163789A
公开(公告)日：2013-08-22
申请号：JP2012028762
申请日：2012-02-13
申请人： Asahi Kasei E-Materials Corp , 旭化成イーマテリアルズ株式会社
发明人： TSUGANE NATSUMI , SAITO HIDEO , KUSAKABE TORU
IPC分类号： C08F299/08 , C08F290/06 , C08G77/44 , C08K5/00 , C08L83/04 , C08L83/10 , G02B1/04
摘要： PROBLEM TO BE SOLVED: To provide a resin composition providing a resin cured material having good crack resistance when molded in a thick film, and having a high hardness.SOLUTION: A photosensitive silicone resin composition contains a silica particle-containing silicone resin (A), a silicone resin (B), and a photopolymerization initiator (C), wherein one or both of the silica particle-containing silicone resin (A) and the silicone resin (B) have a photopolymerizable functional group. In a specific embodiment, the silica particle-containing silicone resin (A) is a condensation reaction product of a specific silane compound and a polysiloxane compound (a) which is a hydrolysis condensation product of the silane compound with a silica particle (b), or a condensation reaction product of the polysiloxane compound (a) with the silica particle (b), or a combination thereof, and the silicone resin (B) is the polysiloxane compound (a).
摘要翻译：要解决的问题：提供一种树脂组合物，其提供在厚膜中成型时具有良好的抗裂性的树脂固化物，并且具有高硬度。溶解性：光敏性有机硅树脂组合物含有含二氧化硅颗粒的硅氧烷树脂（A），硅树脂（B）和光聚合引发剂（C），其中二氧化硅颗粒的有机硅树脂（A）和硅氧烷树脂（B）中的一种或两种具有可光聚合的官能团。在具体实施方案中，含二氧化硅颗粒的有机硅树脂（A）是特定的硅烷化合物与硅烷化合物与二氧化硅颗粒（b）的水解缩合产物的聚硅氧烷化合物（a）的缩合反应产物，或聚硅氧烷化合物（a）与二氧化硅粒子（b）的缩合反应产物或其组合，硅氧烷树脂（B）为聚硅氧烷化合物（a）。

7. 发明专利

JP2013163354A Resin stamper 有权
标题翻译：树脂印章
公开(公告)号：JP2013163354A
公开(公告)日：2013-08-22
申请号：JP2012028769
申请日：2012-02-13
申请人： Asahi Kasei E-Materials Corp , 旭化成イーマテリアルズ株式会社
发明人： TSUGANE NATSUMI , SAITO HIDEO , KUSAKABE TORU
IPC分类号： B29C33/40 , B29K83/00 , G11B7/26 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a single layer resin stamper having both durability and light resistance.SOLUTION: A single layer resin stamper is molded by irradiating UV ray to a photosensitive resin single layer including a silicone-containing compound and curing the photosensitive resin. A pencil hardness of the single resin stamper is H or larger.
摘要翻译：要解决的问题：提供具有耐久性和耐光性的单层树脂压模。解决方案：通过将UV射线照射到包含含硅酮化合物的感光树脂单层并固化感光树脂来模制单层树脂压模。单个树脂压模的铅笔硬度为H以上。

8. 发明专利

JP2013016823A Resin composition for filling trench 有权
标题翻译：用于填充TRENCH的树脂组合物
公开(公告)号：JP2013016823A
公开(公告)日：2013-01-24
申请号：JP2012183054
申请日：2012-08-22
申请人： Asahi Kasei E-Materials Corp , 旭化成イーマテリアルズ株式会社
发明人： MORIYAMA REIKO , TAKEMASA HIROSHI , SAITO HIDEO , DOI ICHIRO
IPC分类号： H01L21/316 , C08G77/18 , H01L21/76
摘要： PROBLEM TO BE SOLVED: To provide a resin composition for trench filling which is suitable to use to fill silicon oxide into a trench formed in a base.SOLUTION: The resin composition for trench filling comprises silicon oxide particles of 0.35 wt.% or more and 2.20 wt.% or less to the total of the resin composition for trench filling, and to the sum total of compounds represented by the general formulas (1)-(3), a tetraalkoxysilane compound of 45 mol% or more and 87 mol% or less which is represented by the general formula (1):Si(OR), a trialkoxysilane compound of 10 mol% or more and 50 mol% or less which is represented by the general formula (2):RSi(OR), and a dialkoxysilane compound of 1.5 mol% or more and 3.6 mol% or less which is represented by the general formula (3):RSi(OR).
摘要翻译：要解决的问题：提供适合于将氧化硅填充到形成在基底中的沟槽中的沟槽填充用树脂组合物。解决方案：用于沟槽填充的树脂组合物包含相对于用于沟槽填充的树脂组合物的总量为0.35重量％以上至2.20重量％以下的氧化硅粒子，以及由通式（1） - （3），由通式（1）表示的45摩尔％以上且87摩尔％以下的四烷氧基硅烷化合物：Si（OR 1 < SP> = > 4 ，由通式（2）表示的10摩尔％以上且50摩尔％以下的三烷氧基硅烷化合物：R 2 Si（OR 1 ） 3 ，和1.5摩尔％以上的二烷氧基硅烷化合物和3.6 摩尔％以下，由通式（3）表示：R 2 Si（OR 1 ） 2 。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2011071292A Air gap structure and method of forming air gap 有权
标题翻译：空气隙结构和形成空气隙的方法
公开(公告)号：JP2011071292A
公开(公告)日：2011-04-07
申请号：JP2009220739
申请日：2009-09-25
申请人： Asahi Kasei E-Materials Corp , 旭化成イーマテリアルズ株式会社
发明人： TSUCHIYA AYAKO , MORIYAMA REIKO , SAITO HIDEO , DOI ICHIRO
IPC分类号： H01L21/764 , H01L21/316 , H01L21/76
摘要： PROBLEM TO BE SOLVED: To provide an air gap structure for electrically isolating between an element and a wire of a semiconductor device with which an element isolation region can be formed by a simple method, and to provide a method of forming the structure.
SOLUTION: The method of forming an air gap 8 in a trench 2 includes an application step of applying an application liquid containing silica particles 5 with an average particle size ranging from ≥1.0 time to ≤200 nm of an opening width of the trench 2 and a binder component 6 on a first surface 4 of a substrate 1 having the trench 2 with the opening formed on the first surface and a heating step of heating the substrate 1 at a temperature of a thermal decomposition temperature of the binder or higher after the application step.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于通过简单的方法在可以形成元件隔离区域的半导体器件的元件和线之间进行电绝缘的气隙结构，并且提供形成该结构的方法。解决方案：在沟槽2中形成气隙8的方法包括施加步骤，将包含二氧化硅颗粒5的涂布液施加在平均粒度为≥1.0时间至≤200nm的平均粒度范围内沟槽2和粘合剂组分6，在具有形成在第一表面上的开口的沟槽2的衬底1的第一表面4上，以及在粘合剂的热分解温度或更高温度下加热衬底1的加热步骤申请步骤后。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2010177648A Polysilane-based composition for being filled in trench 有权
标题翻译：用于在TRENCH中填充的基于多晶硅的组合物
公开(公告)号：JP2010177648A
公开(公告)日：2010-08-12
申请号：JP2009021890
申请日：2009-02-02
申请人： Asahi Kasei E-Materials Corp , 旭化成イーマテリアルズ株式会社
发明人： SAITO HIDEO
IPC分类号： H01L21/76 , C01B33/04 , C08G77/60 , C08L83/16 , H01L21/312
摘要： PROBLEM TO BE SOLVED: To provide a composition for being filled in a trench preferred for being used for filling a silicon oxide in a trench formed in a substrate having high filling property in a trench and a small curing shrinkage rate and providing a silicon oxide coating film having advantageous crack resistance.
SOLUTION: The composition for being filled in the trench is characterized by containing a hydrogenated polysilane compound and a reactant having a structure derived from silica particles.
COPYRIGHT: (C)2010,JPO&INPIT

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