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1. 发明公开

EP2447303A4 PRODUCT OF POLYSILOXANE CONDENSATION 审中-公开
标题翻译：聚硅氧烷的凝聚产物
公开(公告)号：EP2447303A4
公开(公告)日：2012-10-10
申请号：EP10792179
申请日：2010-06-24
申请人： ASAHI KASEI E MATERIALS CORP
发明人： MORIYAMA REIKO , SAITO HIDEO , TAKADA SYOUZOU , DOI ICHIROU
IPC分类号： C08G77/44 , C08L83/04 , C09D183/10 , H01L21/312 , H01L21/76
CPC分类号： C08L83/04 , C08G77/02 , C08G77/04 , C08K3/36 , C08K2201/016 , H01L21/02123 , H01L21/02208 , H01L21/02282 , H01L21/3121 , H01L51/448 , Y10T428/31663 , C08L83/00
摘要： Provided is a condensation reaction product solution which is particularly suitable for filling a trench formed on a substrate having a narrow width and a high aspect ratio. The condensation reaction product solution has a long pot life, superior trench-filling when used for trench-filling, and a low cure shrinkage, an excellent crack resistance and a HF resistance when cured and converted into silicon oxide. The condensation reaction product solution comprises (I) a condensation reaction product obtained by condensation reaction from a condensation component comprising (i) 40% by mass or more and 99% by mass or less in equivalent of condensate of polysiloxane compound derived from silane compounds represented by the general formula (1) : R 1 n SiX 1 4-n (wherein n is an integer of 0 to 3, R 1 is hydrogen atom or a C 1-10 hydrocarbon group, and X 1 is a halogen atom, a C 1-6 alkoxy group or acetoxy group) and (ii) 1% by mass or more and 60% by mass or less of silica particles, and (II) a solvent, wherein the silane compounds represented by the general formula (1) are two or more types of silane compounds comprising a tetrafunctional silane compound which corresponds to the case of n = 0 in the general formula (1) and a trifunctional silane compound which corresponds to the case of n = 1 in the general formula (1).
摘要翻译：提供了一种缩合反应产物溶液，其特别适于填充形成在具有窄宽度和高纵横比的基底上的沟槽。缩合反应产物溶液具有长的适用期，用于沟槽填充时具有优异的沟槽填充性，并且固化和转化为氧化硅时具有低固化收缩率，优异的抗裂性和耐HF性。缩合反应产物溶液包含（I）缩合反应产物，该缩合反应产物由缩合组分缩合反应得到，该缩合反应产物包含（i）40质量％以上且99质量％以下，相当于来源于硅烷化合物的聚硅氧烷化合物的缩合物通式（1）表示：R 1 n SiX 1 4-n（n为0〜3的整数，R 1为氢原子或C 1-10烃基，X 1为卤素原子， C 1-6烷氧基或乙酰氧基）和（ii）1质量％以上且60质量％以下的二氧化硅粒子，和（II）溶剂，其中由通式（1）表示的硅烷化合物是通式（1）中与n = 0的情况相对应的四官能性硅烷化合物和通式（1）中n = 1的情况下的三官能性硅烷化合物的两种以上的硅烷化合物，。

2. 发明专利

JP2012136559A Method for producing polysiloxane condensation reaction product varnish 审中-公开
标题翻译：生产聚硅氧烷凝聚反应产物的方法
公开(公告)号：JP2012136559A
公开(公告)日：2012-07-19
申请号：JP2010287857
申请日：2010-12-24
申请人： Asahi Kasei E-Materials Corp , 旭化成イーマテリアルズ株式会社
发明人： MIYAMOTO YOSHIKI , MORIYAMA REIKO
IPC分类号： C08G77/14 , C08K3/36 , C08L83/06 , C09D5/25 , C09D183/04 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a polysiloxane condensation reaction product varnish suitable for embedding trenches formed in semiconductor elements.SOLUTION: The method for producing the polysiloxane condensation reaction product varnish comprises: (i) a process of obtaining a polysiloxane compound originated from one or more kinds of silane compounds represented by general formula (1): RSiX(wherein, n is an integer of 0 to 3; Ris H or a 1-10C hydrocarbon group; Xis a halogen atom, 1-6C alkoxy or acetoxy) and having a weight-average mol. wt. of 300 or more and less than 1,000; (ii) a process of reacting the polysiloxane compound with silica particles in a solvent to obtain a polysiloxane condensation product solution; and (iii) a process of adding at least one solvent having a boiling point of 100 to 200°C to the polysiloxane condensation product solution and then distilling the mixture to distil away components having boiling points of 100°C or less.
摘要翻译：待解决的问题：提供一种适用于嵌入形成在半导体元件中的沟槽的聚硅氧烷缩合反应产物清漆的方法。解决方案：聚硅氧烷缩合反应产物清漆的制造方法包括：（i）获得由通式（1）表示的一种或多种硅烷化合物得到的聚硅氧烷化合物的方法：R 1 n SiX 1 4-n （其中，n为0〜3的整数; R为SP或= 1-10C烃基; X 1 是卤素原子，1-6C烷氧基或乙酰氧基），并具有重均分子量。重量。 300以上且小于1000; （ii）使聚硅氧烷化合物与二氧化硅颗粒在溶剂中反应得到聚硅氧烷缩合产物溶液的方法; 和（iii）向聚硅氧烷缩合产物溶液中加入至少一种沸点为100-200℃的溶剂的方法，然后将该混合物蒸馏出沸点为100℃或更低的组分。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2010186975A Method of forming trench embedding insulation film 有权
标题翻译：形成嵌入式绝缘膜的方法
公开(公告)号：JP2010186975A
公开(公告)日：2010-08-26
申请号：JP2009031906
申请日：2009-02-13
申请人： Asahi Kasei E-Materials Corp , 旭化成イーマテリアルズ株式会社
发明人： TAKADA SHOZO , MORIYAMA REIKO , SAITO HIDEO
IPC分类号： H01L21/76 , C08K3/36 , C08L83/05 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a process of forming an insulation film suitable for use for embedding the insulation film in a trench formed on a substrate, having excellent crack resistance, and small in a curing shrinkage ratio. SOLUTION: This method of forming a trench embedding insulation film includes processes of: applying a condensed reactant of a polysiloxane compound with silica particles to a substrate including a trench structure; and baking the applied condensed reactant in an non-oxidative atmosphere. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成适合于将绝缘膜嵌入形成在基板上的沟槽中的绝缘膜的工艺，其抗裂性优异，固化收缩率小。解决方案：形成沟槽嵌入绝缘膜的方法包括以下步骤：将聚硅氧烷化合物的缩合反应物与二氧化硅颗粒一起施加到包括沟槽结构的衬底; 并在非氧化性气氛中烘烤施加的凝聚反应物。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2010153655A Polysiloxane-based reactant for filling trench 有权
标题翻译：用于填充TRENCH的聚硅氧烷基反应剂
公开(公告)号：JP2010153655A
公开(公告)日：2010-07-08
申请号：JP2008331333
申请日：2008-12-25
申请人： Asahi Kasei E-Materials Corp , 旭化成イーマテリアルズ株式会社
发明人： SAITO HIDEO , TAKADA SHOZO , MORIYAMA REIKO
IPC分类号： H01L21/76 , C08G77/04 , C08K3/36 , C08K5/54 , C08L83/05 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a reactant for filling a trench which is used for filling silicon oxide in the trench formed in a substrate, with a long pot life for an appropriate solution, high filling capability for the trench, high HF resistance and high crack resistance.
SOLUTION: Concerning a condensation reactant for filling trench, the condensation reactant includes at least a condensation reactant, composed of polysiloxane compound and silica particles; the polysiloxane compound is set to have not less than 40 mol% of at least one group selected from a HSiO
3/2 group, an MeHSiO group and a H
2 SiO group; the weight-average monocular weight of the polysiloxane is set to be not less than 1,000 and not more than 200,000; and the average first particle diameter of the silica particle is set to be not less than 1 nm and not more than 100 nm.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供用于填充在衬底中形成的沟槽中填充氧化硅的沟槽的反应物，具有适用溶液的长适用期，沟槽高填充能力，高HF 电阻和高抗裂性。解决方案：关于用于填充沟槽的缩合反应物，缩合反应物至少包含由聚硅氧烷化合物和二氧化硅颗粒组成的缩合反应物; 将聚硅氧烷化合物设定为具有不少于40摩尔％的选自HSiO 3/2 / SB>，MeHSiO基和H SiO基团中的至少一个基团 ; 聚硅氧烷的重均单眼重量设定为1000以上20万以下; 将二氧化硅粒子的平均第一粒径设定为1nm以上且100nm以下。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2012131864A Coating liquid for forming silica-based insulating film 审中-公开
标题翻译：用于形成二氧化硅基绝缘膜的涂料液
公开(公告)号：JP2012131864A
公开(公告)日：2012-07-12
申请号：JP2010283410
申请日：2010-12-20
申请人： Asahi Kasei E-Materials Corp , 旭化成イーマテリアルズ株式会社
发明人： MORIYAMA REIKO , TAKADA SHOZO , SAITO HIDEO , DOI ICHIRO
IPC分类号： C08G77/44 , C09D1/00 , C09D5/25 , C09D7/12 , C09D183/02 , C09D183/04 , H01L21/316 , H01L21/76 , H01L21/768 , H01L23/532
摘要： PROBLEM TO BE SOLVED: To provide a condensation reaction product solution, which has long pot life, shows a small shrinkage rate during curing when the solution is calcined into silicon oxide, and gives an insulating film having excellent crack resistance and small variation in a dielectric withstanding voltage.SOLUTION: The condensation reaction product solution comprises: (I) a condensation reaction product obtained by condensation reaction of condensation components, which include at least (i) a polysiloxane compound derived from a silane compound expressed by general formula (1): RSiXand (ii) silica particles; and (II) a solvent. The silane compound expressed by general formula (1) contains at least a tetrafunctional silane compound and a trifunctional silane compound. The carbon content in the silica particles is 0.05 mass% or more and less than 0.65 mass%. In formula (1), n represents an integer of 0 to 3; Rrepresents a hydrogen atom or a 1-10C hydrocarbon group; and Xrepresents a halogen atom, a 1-6C alkoxy group or an acetoxy group.
摘要翻译：要解决的问题：为了提供一种具有长使用期的缩合反应产物溶液，当将溶液煅烧成氧化硅时，在固化过程中显示出小的收缩率，并得到具有优异的抗裂性和较小变化的绝缘膜介电耐受电压。缩合反应产物溶液包含：（I）通过缩合组分的缩合反应获得的缩合反应产物，其包括至少（i）衍生自由通式（1）表示的硅烷化合物的聚硅氧烷化合物： 1 1 n SiX 1 4 -n 和（ii）二氧化硅颗粒; 和（II）溶剂。由通式（1）表示的硅烷化合物至少含有四官能硅烷化合物和三官能硅烷化合物。二氧化硅粒子中的碳含量为0.05质量％以上且小于0.65质量％。在式（1）中，n表示0〜3的整数， R 1 表示氢原子或1-10C烃基; X 1 表示卤素原子，1-6C烷氧基或乙酰氧基。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2012131859A Coating liquid for formation of silica-based insulating film 审中-公开
标题翻译：涂料液形成二氧化硅基绝缘膜
公开(公告)号：JP2012131859A
公开(公告)日：2012-07-12
申请号：JP2010283137
申请日：2010-12-20
申请人： Asahi Kasei E-Materials Corp , 旭化成イーマテリアルズ株式会社
发明人： MORIYAMA REIKO , TAKADA SHOZO , SAITO HIDEO , DOI ICHIRO
IPC分类号： C09D183/04 , C08G77/04 , C09D5/25 , C09D7/12 , C09D183/05 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a condensation-reaction material solution capable of forming an insulating film having a prolonged pot life, less curing shrinkage rate when burning to obtain a silicon oxide, excellent cracking resistance and less variation of withstand voltage.SOLUTION: The condensation reaction material solution comprises (I) a condensation reaction material obtained from the condensation reaction of a condensation component at least containing ≥40 to ≤99 mass% in terms of condensation weight of (i) a polysiloxane compound derived from a silane compound represented by general formula (1): RSiX(wherein n is an integer of 0 to 3; Ris hydrogen or a 1-10C hydrocarbon group; and Xis halogen, or 1-6C alkoxy or acetoxy), and ≥1 to ≤60 mass% of (ii) a silica particle, and (II) a solvent. The carbon content in the silica particle is ≥0.05 to
摘要翻译：要解决的问题：提供一种能够形成具有延长的适用期的绝缘膜的缩合反应材料溶液，当燃烧得到氧化硅时，固化收缩率低，耐龟裂性优异，耐电压变化小。缩合反应材料溶液包含（I）缩合反应物质，其缩合反应物质是由（i）衍生出的聚硅氧烷化合物的缩合缩合度的至少含有≥40〜≤99质量％的缩合成分的缩合反应得到的由通式（1）表示的硅烷化合物：R 1 SiX 1 < / SP> 4-n （其中n为0至3的整数; R 1 为氢或1-10C （ii）二氧化硅颗粒的≥1〜≤60质量％，（II）为（ii）溶剂。二氧化硅粒子中的碳含量≥0.05〜<0.65质量％。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2011181939A Method of forming trench-filling insulating film using polysiloxane condensation product 有权
标题翻译：使用聚硅氧烷凝胶产品形成浸渍填充绝缘膜的方法
公开(公告)号：JP2011181939A
公开(公告)日：2011-09-15
申请号：JP2011085732
申请日：2011-04-07
申请人： Asahi Kasei E-Materials Corp , 旭化成イーマテリアルズ株式会社
发明人： MORIYAMA REIKO , SAITO HIDEO , TAKADA SHOZO , DOI ICHIRO
IPC分类号： H01L21/76 , H01L21/312
摘要： PROBLEM TO BE SOLVED: To provide a method of forming an insulating film using a condensation product solution which is especially suitable for filling up a trench formed in a substrate and having a narrow opening width and a high aspect ratio, has a long pot life, has satisfactory suitability for trench filling, has a low degree of cure shrinkage when burned and converted into silicon oxide, and has excellent crack resistance and HF resistance. SOLUTION: The method of forming an insulating film for filling a trench formed in a semiconductor element includes: an applying step of obtaining a coated substrate by applying, onto a substrate, a condensation product solution comprising a condensation product and a solvent, wherein the condensation product is obtained from condensation ingredients containing a polysiloxane compound derived from silane compounds with a specific structure and silica particles and the silane compounds include a tetrafunctional silane compound and a trifunctional silane compound; and a burning step of heating the coated substrate obtained in the applying step. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用特别适用于填充形成在基板中并且具有窄的开口宽度和高纵横比的沟槽的缩合产物溶液形成绝缘膜的方法，具有长的使用寿命长，具有满意的沟槽填充适用性，燃烧时转化为氧化硅时的固化收缩率低，抗裂性和耐高温性优异。解决方案：形成用于填充形成在半导体元件中的沟槽的绝缘膜的方法包括：施加步骤，通过将包含缩合产物和溶剂的缩合产物溶液施加到基底上来获得涂覆的基底，其中所述缩合产物由含有特定结构的硅烷化合物的聚硅氧烷化合物和二氧化硅颗粒的缩合成分得到，所述硅烷化合物包括四官能硅烷化合物和三官能硅烷化合物; 以及加热涂布工序中得到的涂布基板的燃烧工序。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2011026570A Polysiloxane condensation reaction product 有权
标题翻译：聚硅氧烷凝结反应产物
公开(公告)号：JP2011026570A
公开(公告)日：2011-02-10
申请号：JP2010144081
申请日：2010-06-24
申请人： Asahi Kasei E-Materials Corp , 旭化成イーマテリアルズ株式会社
发明人： MORIYAMA REIKO , SAITO HIDEO , TAKADA SHOZO , DOI ICHIRO
IPC分类号： C08G77/14 , H01L21/316 , H01L21/76
摘要： PROBLEM TO BE SOLVED: To provide a solution of a condensation reaction product which: is particularly suitable for filling up trench that is formed in a substrate and has a narrow opening and a high aspect ratio; has a long pot life; has good trench filling property; has a small curing shrinkage when burned and converted to a silicon oxide; and is excellent in crack resistance and HF resistance.
SOLUTION: The solution of a condensation reaction product comprises (I) the condensation reaction product and (II) a solvent, wherein the condensation reaction product is obtained by the condensation reaction of a condensation ingredient that contains at least (i) a polysiloxane compound of 40 mass% or more and 99 mass% or less in terms of condensation weight and (ii) a silica particle of 1 mass% or more and 60 mass% or less; and the polysiloxane compound is derived from silane compounds represented by formula (1): R
1
n SiX
1
4-n which are two or more kinds of silane compounds containing at least a four-functional silane compound and a three-functional silane compound.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种缩合反应产物的溶液，其特别适用于填充形成在基材中的沟槽，并且具有窄的开口和高的纵横比; 使用寿命长; 沟渠填充性好; 在燃烧时具有小的固化收缩率并转化为氧化硅; 耐裂纹性和耐HF性优异。解决方案：缩合反应产物的溶液包含（I）缩合反应产物和（II）溶剂，其中缩合反应产物通过缩合反应产生，所述缩合反应产物至少包含（i）聚硅氧烷化合物的缩合缩合度为40质量％以上且99质量％以下，（ii）1质量％以上且60质量％以下的二氧化硅粒子; 并且聚硅氧烷化合物衍生自由式（1）表示的硅烷化合物：R 1 SP 1 SiX 4-n < SB>是含有至少四官能硅烷化合物和三官能硅烷化合物的两种以上的硅烷化合物。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2010186938A Condensation reaction product for filling polysiloxane-based trench and method for manufacturing trench filling film 有权
标题翻译：用于填充基于聚硅氧烷的凝胶的凝结反应产物和用于制造TRENCH填充膜的方法
公开(公告)号：JP2010186938A
公开(公告)日：2010-08-26
申请号：JP2009031269
申请日：2009-02-13
申请人： Asahi Kasei E-Materials Corp , 旭化成イーマテリアルズ株式会社
发明人： MORIYAMA REIKO , SAITO HIDEO , TAKADA SHOZO
IPC分类号： H01L21/312 , C08G77/12 , C08G77/44 , H01L21/316 , H01L21/76
摘要： PROBLEM TO BE SOLVED: To provide a condensation reaction product for filling a trench having good storage stability of a solution suitable for using for filling the trench formed in a substrate with silicon oxide and high filling performance, permitting the formation of a thick film, and having good crack resistance, and provide a method for manufacturing a trench filling film.
SOLUTION: A condensation reaction product for filling a trench contains: a condensation reaction product of polysiloxane compound and silica particles; and a mixed solvent comprising an organic solvent (A) having a vapor pressure of 530 Pa or above at 20°C and a boiling point of 80°C or above and below 130°C and an organic solvent (B) having a vapor pressure of below 530 Pa at 20°C and a boiling point of 130°C or above and 200°C or below; or an organic solvent (C) having a vapor pressure of 530 Pa or above at 20°C and a boiling point of 130°C or above and 200°C or below.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种用于填充具有良好储存稳定性的沟槽的缩合反应产物，该溶液适合用于填充形成在衬底中的沟槽的氧化硅和高填充性能的溶液，允许形成厚的膜，并且具有良好的抗裂性，并提供制造沟槽填充膜的方法。解决方案：用于填充沟槽的缩合反应产物包含：聚硅氧烷化合物和二氧化硅颗粒的缩合反应产物; 和包含在20℃，沸点为80℃以上且低于130℃下蒸汽压为530Pa以上的有机溶剂（A）的混合溶剂和具有蒸气压的有机溶剂（B）在20℃下的530Pa以下，沸点130℃以上且200℃以下，或在20℃，沸点为130℃以上且200℃以下的蒸气压为530Pa以上的有机溶剂（C）。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2010080776A Resin composition for filling trench and manufacturing method thereof 有权
标题翻译：用于填充TRENCH的树脂组合物及其制造方法
公开(公告)号：JP2010080776A
公开(公告)日：2010-04-08
申请号：JP2008248925
申请日：2008-09-26
申请人： Asahi Kasei E-Materials Corp , 旭化成イーマテリアルズ株式会社
发明人： MORIYAMA REIKO , TAKEMASA HIROSHI , SAITO HIDEO , DOI ICHIRO
IPC分类号： H01L21/312 , C08G77/04 , C08L83/04 , H01L21/76
摘要： PROBLEM TO BE SOLVED: To provide a resin composition for filling trenches, which is suitably used for embedding a silicon oxide in a trench formed in a substrate.
SOLUTION: The resin composition for filling trenches includes 0.35 to 2.20 wt.% oxide silicon particles with respect to the whole of the resin composition for filling trenches and includes 45 to 87 mol% tetralxyxylan compound represented by a general formula (1):Si(OR
1 )
4 , 10 to 50 mol% tri-alkoxysilane compound represented by a general formula (2):R
2 Si(OR
1 )
3 , and 1.5 to 3.6 mol% dialkoxysilane compound represented by general formula (3):R
2
2 Si(OR
1 )
2 with respect to the total of compounds represented by general formulas (1) to (3).
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于填充沟槽的树脂组合物，其适于用于将氧化硅嵌入形成在衬底中的沟槽中。解决方案：用于填充沟槽的树脂组合物相对于用于填充沟槽的整个树脂组合物包含0.35至2.20重量％的氧化硅颗粒，并且包含由通式（1）表示的45至87摩尔％的四氢化木聚糖化合物，：通式（2）表示的10〜50摩尔％的三烷氧基硅烷化合物：R（SP 2）（3）的表示的1.5至3.6摩尔％的二烷氧基硅烷化合物：R 2 SPX 2＆lt; SP＆gt;＆lt; SP＆gt; 相对于由通式（1）至（3）表示的化合物的总量，SB / Si（OR 1 / SP 2）/ SB 2 。版权所有（C）2010，JPO＆INPIT

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