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1. 发明申请

WO2010022212A3 SURFACE TREATED ALUMINUM NITRIDE BAFFLE 审中-公开
标题翻译：表面处理的硝酸铝
公开(公告)号：WO2010022212A3
公开(公告)日：2010-05-14
申请号：PCT/US2009054416
申请日：2009-08-20
申请人： APPLIED MATERIALS INC , RASHEED MUHAMMAD M , LUBOMIRSKY DMITRY
发明人： RASHEED MUHAMMAD M , LUBOMIRSKY DMITRY
IPC分类号： H01L21/205 , H01L21/00
CPC分类号： C23C16/45591 , C04B35/581 , C04B40/0092 , C23C16/4404 , C23C16/45563 , C23C16/45565 , H01J37/32449 , H01L21/02271 , H01L21/0262 , H01L21/28556
摘要： Methods and apparatus relating to aluminum nitride baffles are provided herein. In some embodiments, a baffle for use in semiconductor process chambers may include a body comprising aluminum nitride and a metal oxide binding agent, wherein a ratio of aluminum nitride to metal oxide on a surface of the body is greater than or equal to the ratio within the body. In some embodiments, the body may have a center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem. In some embodiments, a method of fabricating a baffle may include sintering aluminum, nitrogen, and a metal oxide binding agent to form a body of the baffle, the body having excess metal oxide binding agent disposed on a surface thereof; and removing a bulk of the excess metal oxide binding agent from a surface of the body.
摘要翻译：本文提供了与氮化铝挡板相关的方法和装置。在一些实施例中，用于半导体处理腔室的挡板可以包括包括氮化铝和金属氧化物结合剂的主体，其中，主体表面上的氮化铝与金属氧化物的比例大于或等于身体。在一些实施例中，主体可以具有中心杆和外环，其与中心杆的下部连接并径向向外延伸。在一些实施例中，制造挡板的方法可以包括烧结铝，氮和金属氧化物结合剂以形成挡板的主体，该主体具有设置在其表面上的多余的金属氧化物粘合剂; 以及从身体的表面去除大量的多余的金属氧化物粘合剂。

2. 发明申请

WO2009131889A2 METHOD AND APPARATUS FOR EXCIMER CURING 审中-公开
标题翻译：用于指导固化的方法和设备
公开(公告)号：WO2009131889A2
公开(公告)日：2009-10-29
申请号：PCT/US2009040809
申请日：2009-04-16
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , RASHEED MUHAMMAD M , YIEH ELLIE Y
发明人： LUBOMIRSKY DMITRY , RASHEED MUHAMMAD M , YIEH ELLIE Y
IPC分类号： H01L21/324 , H01L21/205
CPC分类号： H01L21/67115 , H01L21/3105 , H01S3/03 , H01S3/034 , H01S3/0385 , H01S3/225 , H05H1/2406 , H05H2001/2431 , H05H2001/245
摘要： An apparatus for An apparatus for generating excimer radiation is provided. The apparatus includes a housing having a housing wall. An electrode is configured within the housing. A tubular body is around the electrode. The tubular body includes an outer wall and an inner wall. At least one inert gas is between the outer wall and the inner wall, wherein the housing wall and the electrode are configured to excite the inert gas to illuminate an excimer light for curing.
摘要翻译：提供了一种用于产生准分子辐射的设备。该设备包括具有壳体壁的壳体。电极配置在壳体内。管状体围绕电极。管状体包括外壁和内壁。至少一种惰性气体位于外壁和内壁之间，其中外壳壁和电极被配置为激发惰性气体以照射准分子光以固化。

3. 发明申请

WO2009132181A3 LOW PROFILE PROCESS KIT 审中-公开
标题翻译：低配置工艺包
公开(公告)号：WO2009132181A3
公开(公告)日：2010-02-18
申请号：PCT/US2009041528
申请日：2009-04-23
申请人： APPLIED MATERIALS INC , RASHEED MUHAMMAD M , IWASHITA TERUKI , OTAKE HIROSHI , KOGA YUKI , MAEHARA KAZUTOSHI , CHEN XINGLONG , GONDHALEKAR SUDHIR , LUBOMIRSKY DMITRY
发明人： RASHEED MUHAMMAD M , IWASHITA TERUKI , OTAKE HIROSHI , KOGA YUKI , MAEHARA KAZUTOSHI , CHEN XINGLONG , GONDHALEKAR SUDHIR , LUBOMIRSKY DMITRY
IPC分类号： H01L21/683 , H01L21/687
CPC分类号： C23C16/4585 , C23C16/4581 , H01J37/32082 , H01J37/32642 , H01L21/68735
摘要： Embodiments of process kits for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, a process kit for a semiconductor process chamber may include an annular body being substantially horizontal and having an inner and an outer edge, and an upper and a lower surface; an inner lip disposed proximate the inner edge and extending vertically from the upper surface; and an outer lip disposed proximate the outer edge and on the lower surface, and having a shape conforming to a surface of the substrate support pedestal. In some embodiments, a process kit for a semiconductor process chamber my include an annular body having an inner and an outer edge, and having an upper and lower surface, the upper surface disposed at a downward angle of between about 5-65 degrees in a radially outward direction from the inner edge toward the outer edge.
摘要翻译：本文提供了半导体衬底处理腔的衬底支撑件的工艺组件的实施例。在一些实施例中，用于半导体处理室的处理套件可以包括基本上水平的并具有内部和外部边缘以及上部和下部表面的环形体; 靠近所述内边缘并从所述上表面垂直延伸的内唇缘; 以及设置在所述外边缘和所述下表面附近并且具有与所述基板支撑基座的表面相符的形状的外唇缘。在一些实施例中，用于半导体处理室的处理套件包括具有内边缘和外边缘的环形体，并且具有上表面和下表面，所述上表面以约5-65度的向下角度设置在从内缘朝向外缘的径向向外方向。

4. 发明申请

WO2009131889A9 METHOD AND APPARATUS FOR EXCIMER CURING 审中-公开
标题翻译： EXCIMER固化的方法和装置
公开(公告)号：WO2009131889A9
公开(公告)日：2009-12-30
申请号：PCT/US2009040809
申请日：2009-04-16
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , RASHEED MUHAMMAD M , YIEH ELLIE Y
发明人： LUBOMIRSKY DMITRY , RASHEED MUHAMMAD M , YIEH ELLIE Y
IPC分类号： H01L21/324 , H01L21/205
CPC分类号： H01L21/67115 , H01L21/3105 , H01S3/03 , H01S3/034 , H01S3/0385 , H01S3/225 , H05H1/2406 , H05H2001/2431 , H05H2001/245
摘要： An apparatus for An apparatus for generating excimer radiation is provided. The apparatus includes a housing having a housing wall. An electrode is configured within the housing. A tubular body is around the electrode. The tubular body includes an outer wall and an inner wall. At least one inert gas is between the outer wall and the inner wall, wherein the housing wall and the electrode are configured to excite the inert gas to illuminate an excimer light for curing.
摘要翻译：提供了一种用于产生准分子辐射的装置。该装置包括具有壳体壁的壳体。电极配置在外壳内。管状体在电极周围。管体包括外壁和内壁。至少一个惰性气体位于外壁和内壁之间，其中壳体壁和电极构造成激发惰性气体以照射准分子光以进行固化。

5. 发明申请

WO2010114823A2 SPUTTERING TARGET FOR PVD CHAMBER 审中-公开
标题翻译： PVD室的喷射目标
公开(公告)号：WO2010114823A2
公开(公告)日：2010-10-07
申请号：PCT/US2010029171
申请日：2010-03-30
申请人： APPLIED MATERIALS INC , LIU ZHENDONG , WANG RONGJUN , TANG XIANMIN , GANDIKOTA SRINIVAS , GUNG TZA-JING , RASHEED MUHAMMAD M
发明人： LIU ZHENDONG , WANG RONGJUN , TANG XIANMIN , GANDIKOTA SRINIVAS , GUNG TZA-JING , RASHEED MUHAMMAD M
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： C23C14/3407 , H01J37/342 , H01J37/3423
摘要： Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.
摘要翻译：公开了包括目标组件的目标组件和PVD室。目标组件包括具有凹形目标的目标。当在PVD室中使用时，凹目标在设置在溅射室中的基板上提供更径向均匀的沉积。

6. 发明申请

WO2012109069A3 PVD SPUTTERING TARGET WITH A PROTECTED BACKING PLATE 审中-公开
标题翻译：带有保护背板的PVD溅射目标
公开(公告)号：WO2012109069A3
公开(公告)日：2013-01-03
申请号：PCT/US2012023474
申请日：2012-02-01
申请人： APPLIED MATERIALS INC , RASHEED MUHAMMAD M , WANG RONGJUN
发明人： RASHEED MUHAMMAD M , WANG RONGJUN
IPC分类号： C23C14/34 , C23C14/50
CPC分类号： C23C14/3407 , C22C9/00 , C22C9/04 , C22C19/03 , C23C14/3414 , H01J37/3426 , H01J37/3435
摘要： Embodiments of the invention provide sputtering targets utilized in physical vapor deposition (PVD) and methods to form such sputtering targets. In one embodiment, a sputtering target contains a target layer disposed on a backing plate, and a protective coating layer - usually containing a nickel material - covering and protecting a region of the backing plate that would otherwise be exposed to plasma during the PVD processes. In many examples, the target layer contains a nickel-platinum alloy, the backing plate contains a copper alloy (e.g., copper-zinc), and the protective coating layer contains metallic nickel. The protective coating layer eliminates the formation of highly conductive, copper contaminants typically derived by plasma erosion of the copper alloy contained within the exposed surfaces of the backing plate. Therefore, the substrates and the interior surfaces of the PVD chamber remain free of such copper contaminants during the PVD processes.
摘要翻译：本发明的实施例提供了用于物理气相沉积（PVD）的溅射靶和形成这种溅射靶的方法。在一个实施例中，溅射靶包含设置在背板上的目标层和通常包含镍材料的保护涂层 - 覆盖并保护背衬板的区域，否则在PVD工艺期间将暴露于等离子体。在许多实施例中，靶层含有镍 - 铂合金，背板含有铜合金（例如铜 - 锌），保护涂层含有金属镍。保护涂层消除了形成高度导电的铜污染物，通常由包含在背板的暴露表面内的铜合金的等离子体侵蚀导致。因此，在PVD工艺期间，PVD室的基板和内表面保持没有这种铜污染物。

7. 发明申请

WO2011109337A2 PHYSICAL VAPOR DEPOSITION WITH A VARIABLE CAPACITIVE TUNER AND FEEDBACK CIRCUIT 审中-公开
标题翻译：具有可变电容调谐器和反馈电路的物理蒸气沉积
公开(公告)号：WO2011109337A2
公开(公告)日：2011-09-09
申请号：PCT/US2011026601
申请日：2011-03-01
申请人： APPLIED MATERIALS INC , RASHEED MUHAMMAD M , DEDORE RONALD D , COX MICHAEL S , MILLER KEITH A , YOUNG DONNY , FORSTER JOHN C , ALLEN ADOLPH M , HAWRYLCHAK LARA
发明人： RASHEED MUHAMMAD M , DEDORE RONALD D , COX MICHAEL S , MILLER KEITH A , YOUNG DONNY , FORSTER JOHN C , ALLEN ADOLPH M , HAWRYLCHAK LARA
CPC分类号： H01J37/3444 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/3438
摘要： Apparatus and methods for performing plasma processing on a wafer supported on a pedestal are provided. The apparatus can include a pedestal on which the wafer can be supported, a variable capacitor having a variable capacitance, a motor attached to the variable capacitor which varies the capacitance of the variable capacitor, a motor controller connected to the motor that causes the motor to rotate, and an output from the variable capacitor connected to the pedestal. A desired state of the variable capacitor is associated with a process recipe in a process controller. When the process recipe is executed the variable capacitor is placed in the desired state.
摘要翻译：提供了在支撑在基座上的晶片上进行等离子体处理的装置和方法。该装置可以包括可以支撑晶片的基座，具有可变电容的可变电容器，附接到可变电容器的电动机，其改变可变电容器的电容;连接到电动机的电动机控制器，其使电动机旋转，以及连接到基座的可变电容器的输出。可变电容器的期望状态与过程控制器中的过程配方相关联。当执行处理配方时，将可变电容器置于所需状态。

8. 发明申请

WO2010114823A3 SPUTTERING TARGET FOR PVD CHAMBER 审中-公开
标题翻译： PVD室的喷射目标
公开(公告)号：WO2010114823A3
公开(公告)日：2011-01-13
申请号：PCT/US2010029171
申请日：2010-03-30
申请人： APPLIED MATERIALS INC , LIU ZHENDONG , WANG RONGJUN , TANG XIANMIN , GANDIKOTA SRINIVAS , GUNG TZA-JING , RASHEED MUHAMMAD M
发明人： LIU ZHENDONG , WANG RONGJUN , TANG XIANMIN , GANDIKOTA SRINIVAS , GUNG TZA-JING , RASHEED MUHAMMAD M
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： C23C14/3407 , H01J37/342 , H01J37/3423
摘要： Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.
摘要翻译：公开了包括目标组件的目标组件和PVD室。目标组件包括具有凹形目标的目标。当在PVD室中使用时，凹目标在设置在溅射室中的基板上提供更径向均匀的沉积。

9. 发明申请

WO2012109104A3 UNIFORMITY TUNING CAPABLE ESC GROUNDING KIT FOR RF PVD CHAMBER 审中-公开
标题翻译：用于RF PVD室的均匀调谐电容接地套件
公开(公告)号：WO2012109104A3
公开(公告)日：2013-01-03
申请号：PCT/US2012023762
申请日：2012-02-03
申请人： APPLIED MATERIALS INC , RASHEED MUHAMMAD M , WANG RONGJUN , NGUYEN THANH X , RITCHIE ALAN A
发明人： RASHEED MUHAMMAD M , WANG RONGJUN , NGUYEN THANH X , RITCHIE ALAN A
IPC分类号： H01L21/203
CPC分类号： H01J37/34 , H01J37/32082 , H01J37/3441
摘要： Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically, embodiments described herein relate to a grounding kit which creates an asymmetric grounding path selected to significantly reduce the asymmetries caused by an off center RF power delivery.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的接地套件和具有接地套件的半导体处理室。更具体地说，本文描述的实施例涉及一种接地套件，该接地套件产生一个非对称接地路径，该非接地套件被选择以显着地减少由偏心的RF功率输送引起的

10. 发明申请

WO2011156650A3 LOW RESISTIVITY TUNGSTEN PVD WITH ENHANCED IONIZATION AND RF POWER COUPLING 审中-公开
标题翻译：具有增强离子化和射频功率耦合的低电阻TUNGSTEN PVD
公开(公告)号：WO2011156650A3
公开(公告)日：2012-04-19
申请号：PCT/US2011039867
申请日：2011-06-09
申请人： APPLIED MATERIALS INC , CAO YONG , TANG XIANMIN , GANDIKOTA SRINIVAS , WANG WEI D , LIU ZHENDONG , MORAES KEVIN , RASHEED MUHAMMAD M , NGUYEN THANH X , JUPUDI ANANTHKRISHNA
发明人： CAO YONG , TANG XIANMIN , GANDIKOTA SRINIVAS , WANG WEI D , LIU ZHENDONG , MORAES KEVIN , RASHEED MUHAMMAD M , NGUYEN THANH X , JUPUDI ANANTHKRISHNA
IPC分类号： H01L29/78 , H01L21/336 , H01L29/43
CPC分类号： H01L21/28079 , C23C14/165 , C23C14/345 , C23C14/35 , H01L21/28088 , H01L21/2855 , H01L29/4966 , H01L29/517 , H01L29/78
摘要： Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.
摘要翻译：本文描述的实施例提供了一种半导体器件及其形成方法和装置。半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。栅极电极堆叠包括在栅极电介质层上的导电膜层，导电膜层上的难熔金属氮化物膜层，难熔金属氮化物膜层上的含硅膜层，以及硅 - 含有膜层。在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。该方法还包括在导电膜层上沉积难熔金属氮化物膜层，在难熔金属氮化物膜层上沉积含硅膜层，并在含硅膜层上沉积钨膜层。

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