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1. 发明申请

WO2011143012A2 HEATER WITH INDEPENDENT CENTER ZONE CONTROL 审中-公开
标题翻译：加热器具有独立的中心区域控制
公开(公告)号：WO2011143012A2
公开(公告)日：2011-11-17
申请号：PCT/US2011035014
申请日：2011-05-03
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , GONDHALEKAR SUDHIR R , VENKATARAMAN SHANKAR , FLOYD KIRBY H , ZHANG YIZHEN
发明人： LUBOMIRSKY DMITRY , GONDHALEKAR SUDHIR R , VENKATARAMAN SHANKAR , FLOYD KIRBY H , ZHANG YIZHEN
IPC分类号： H01L21/02 , H01L21/683
CPC分类号： H01L21/67103 , H01L21/68792
摘要： A substrate heater comprising a ceramic substrate support having a substantially flat upper surface for supporting a substrate during substrate processing; a resistive heater embedded within the substrate support; a heater shaft coupled to a back surface of the substrate support, the heater having an interior cavity that extends along its longitudinal axis and ends at a bottom central surface of the substrate support; and a supplemental heater, separate from the ceramic substrate support, positioned within the interior cavity of the heater shaft in thermal contact with a portion of the bottom central surface of the substrate support such that the supplemental heater can alter the temperature of a central area of the upper surface of the substrate support.
摘要翻译：一种衬底加热器，包括陶瓷衬底支撑件，其具有在衬底处理期间用于支撑衬底的基本平坦的上表面; 嵌入在所述衬底支架内的电阻加热器; 加热器轴，其耦合到所述基板支撑件的后表面，所述加热器具有沿着其纵向轴线延伸并且在所述基板支撑件的底部中心表面处终止的内部空腔; 以及与陶瓷基板支撑件分开的补充加热器，其位于加热器轴的内部空腔内，与基板支撑件的底部中心表面的一部分热接触，使得补充加热器可以改变加热器轴的中心区域的温度衬底的上表面支撑。

2. 发明申请

WO2010047953A3 A REMOTE PLASMA CLEAN PROCESS WITH CYCLED HIGH AND LOW PRESSURE CLEAN STEPS 审中-公开
标题翻译：具有循环高低压清洁步骤的远程等离子清洁工艺
公开(公告)号：WO2010047953A3
公开(公告)日：2010-06-17
申请号：PCT/US2009059878
申请日：2009-10-07
申请人： APPLIED MATERIALS INC , HUA ZHONG QIANG , KAMATH SANJAY , LEE YOUNG S , YIEH ELLIE Y , LE HIEN-MINH HUU , PATEL ANJANA M , GONDHALEKAR SUDHIR R
发明人： HUA ZHONG QIANG , KAMATH SANJAY , LEE YOUNG S , YIEH ELLIE Y , LE HIEN-MINH HUU , PATEL ANJANA M , GONDHALEKAR SUDHIR R
IPC分类号： H01L21/3065 , H01L21/205 , H01L21/302
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.
摘要翻译：一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不想要的沉积物。在一个实施例中，将基板转移出基板处理室，并且将含氟蚀刻剂气体的流引入到其中形成反应性物质的远程等离子体源中。产生从远程等离子体源到基板处理室的反应物质的连续流动，同时重复高低压清洁步骤的循环。在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。在低压清洁步骤期间，反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

3. 发明申请

WO2009132181A2 LOW PROFILE PROCESS KIT 审中-公开
标题翻译：低配置工艺包
公开(公告)号：WO2009132181A2
公开(公告)日：2009-10-29
申请号：PCT/US2009/041528
申请日：2009-04-23
申请人： APPLIED MATERIALS, INC. , RASHEED, Muhammad, M. , IWASHITA, Teruki , OTAKE, Hiroshi , KOGA, Yuki , MAEHARA, Kazutoshi , CHEN, Xinglong , GONDHALEKAR, Sudhir , LUBOMIRSKY, Dmitry
发明人： RASHEED, Muhammad, M. , IWASHITA, Teruki , OTAKE, Hiroshi , KOGA, Yuki , MAEHARA, Kazutoshi , CHEN, Xinglong , GONDHALEKAR, Sudhir , LUBOMIRSKY, Dmitry
IPC分类号： H01L21/683 , H01L21/687
CPC分类号： C23C16/4585 , C23C16/4581 , H01J37/32082 , H01J37/32642 , H01L21/68735
摘要： Embodiments of process kits for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, a process kit for a semiconductor process chamber may include an annular body being substantially horizontal and having an inner and an outer edge, and an upper and a lower surface; an inner lip disposed proximate the inner edge and extending vertically from the upper surface; and an outer lip disposed proximate the outer edge and on the lower surface, and having a shape conforming to a surface of the substrate support pedestal. In some embodiments, a process kit for a semiconductor process chamber my include an annular body having an inner and an outer edge, and having an upper and lower surface, the upper surface disposed at a downward angle of between about 5-65 degrees in a radially outward direction from the inner edge toward the outer edge.
摘要翻译：本文提供了半导体衬底处理室的衬底支撑件的工艺组件的实施例。在一些实施例中，用于半导体处理室的处理套件可以包括基本上水平的并具有内部和外部边缘以及上部和下部表面的环形体; 靠近所述内边缘并从所述上表面垂直延伸的内唇缘; 以及设置在所述外边缘和所述下表面附近并且具有与所述基板支撑基座的表面相符的形状的外唇缘。在一些实施例中，用于半导体处理室my的处理套件包括具有内边缘和外边缘的环形体，并且具有上表面和下表面，上表面以约5-65度的向下角度设置在从内缘朝向外缘的径向向外方向。

4. 发明申请

WO2010047953A2 A REMOTE PLASMA CLEAN PROCESS WITH CYCLED HIGH AND LOW PRESSURE CLEAN STEPS 审中-公开
标题翻译：具有循环高低压清洁步骤的远程等离子体清洁工艺
公开(公告)号：WO2010047953A2
公开(公告)日：2010-04-29
申请号：PCT/US2009/059878
申请日：2009-10-07
申请人： APPLIED MATERIALS, INC. , HUA, Zhong, Qiang , KAMATH, Sanjay , LEE, Young, S. , YIEH, Ellie, Y. , LE, Hien-Minh, Huu , PATEL, Anjana, M. , GONDHALEKAR, Sudhir, R.
发明人： HUA, Zhong, Qiang , KAMATH, Sanjay , LEE, Young, S. , YIEH, Ellie, Y. , LE, Hien-Minh, Huu , PATEL, Anjana, M. , GONDHALEKAR, Sudhir, R.
IPC分类号： H01L21/3065 , H01L21/302 , H01L21/205
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.
摘要翻译：远程等离子体工艺，用于在处理设置在衬底处理室中的衬底之后从衬底处理室的一个或多个内表面移除不需要的沉积堆积物。在一个实施例中，将衬底转移出衬底处理室，并将含氟蚀刻剂气体流引入形成反应物质的远程等离子体源中。产生从远程等离子体源到基板处理室的反应性物质的连续流动，同时重复高压和低压清洁步骤的循环。在高压清洁步骤期间，活性物质流入衬底处理室，同时衬底处理室内的压力保持在4-15托之间。在低压清洁步骤中，活性物质流入基板处理室，同时将基板处理室的压力降低高压清洁步骤中达到的高压的至少50％。

5. 发明申请

WO2006058240A1 GAS DISTRIBUTION SYSTEM FOR IMPROVED TRANSIENT VAPOR PHASE DEPOSITION 审中-公开
标题翻译：用于改进的瞬态蒸气相沉积的气体分配系统
公开(公告)号：WO2006058240A1
公开(公告)日：2006-06-01
申请号：PCT/US2005/042790
申请日：2005-11-22
申请人： APPLIED MATERIALS, INC. , GONDHALEKAR, Sudhir , DUNCAN, Robert , SALIMIAN, Siamak , RASHEED, Muhammad, M. , WHITESELL, Harry, Smith , GEOFFRION, Bruno , KRISHNARAJ, Padmanabhan , GUJER, Rudolf
发明人： GONDHALEKAR, Sudhir , DUNCAN, Robert , SALIMIAN, Siamak , RASHEED, Muhammad, M. , WHITESELL, Harry, Smith , GEOFFRION, Bruno , KRISHNARAJ, Padmanabhan , GUJER, Rudolf
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： C23C16/4558
摘要： Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.
摘要翻译：本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。多个孔流体耦合在第一通道和第二通道之间。多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加沿着第一通道测量的孔口和气体入口。

6. 发明申请

WO2011143012A3 HEATER WITH INDEPENDENT CENTER ZONE CONTROL 审中-公开
公开(公告)号：WO2011143012A3
公开(公告)日：2011-11-17
申请号：PCT/US2011/035014
申请日：2011-05-03
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , GONDHALEKAR, Sudhir, R. , VENKATARAMAN, Shankar , FLOYD, Kirby, H. , ZHANG, Yizhen
发明人： LUBOMIRSKY, Dmitry , GONDHALEKAR, Sudhir, R. , VENKATARAMAN, Shankar , FLOYD, Kirby, H. , ZHANG, Yizhen
IPC分类号： H01L21/02 , H01L21/683
摘要： A substrate heater comprising a ceramic substrate support having a substantially flat upper surface for supporting a substrate during substrate processing; a resistive heater embedded within the substrate support; a heater shaft coupled to a back surface of the substrate support, the heater having an interior cavity that extends along its longitudinal axis and ends at a bottom central surface of the substrate support; and a supplemental heater, separate from the ceramic substrate support, positioned within the interior cavity of the heater shaft in thermal contact with a portion of the bottom central surface of the substrate support such that the supplemental heater can alter the temperature of a central area of the upper surface of the substrate support.

7. 发明申请

WO2009132181A3 LOW PROFILE PROCESS KIT 审中-公开
标题翻译：低配置工艺包
公开(公告)号：WO2009132181A3
公开(公告)日：2010-02-18
申请号：PCT/US2009041528
申请日：2009-04-23
申请人： APPLIED MATERIALS INC , RASHEED MUHAMMAD M , IWASHITA TERUKI , OTAKE HIROSHI , KOGA YUKI , MAEHARA KAZUTOSHI , CHEN XINGLONG , GONDHALEKAR SUDHIR , LUBOMIRSKY DMITRY
发明人： RASHEED MUHAMMAD M , IWASHITA TERUKI , OTAKE HIROSHI , KOGA YUKI , MAEHARA KAZUTOSHI , CHEN XINGLONG , GONDHALEKAR SUDHIR , LUBOMIRSKY DMITRY
IPC分类号： H01L21/683 , H01L21/687
CPC分类号： C23C16/4585 , C23C16/4581 , H01J37/32082 , H01J37/32642 , H01L21/68735
摘要： Embodiments of process kits for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, a process kit for a semiconductor process chamber may include an annular body being substantially horizontal and having an inner and an outer edge, and an upper and a lower surface; an inner lip disposed proximate the inner edge and extending vertically from the upper surface; and an outer lip disposed proximate the outer edge and on the lower surface, and having a shape conforming to a surface of the substrate support pedestal. In some embodiments, a process kit for a semiconductor process chamber my include an annular body having an inner and an outer edge, and having an upper and lower surface, the upper surface disposed at a downward angle of between about 5-65 degrees in a radially outward direction from the inner edge toward the outer edge.
摘要翻译：本文提供了半导体衬底处理腔的衬底支撑件的工艺组件的实施例。在一些实施例中，用于半导体处理室的处理套件可以包括基本上水平的并具有内部和外部边缘以及上部和下部表面的环形体; 靠近所述内边缘并从所述上表面垂直延伸的内唇缘; 以及设置在所述外边缘和所述下表面附近并且具有与所述基板支撑基座的表面相符的形状的外唇缘。在一些实施例中，用于半导体处理室的处理套件包括具有内边缘和外边缘的环形体，并且具有上表面和下表面，所述上表面以约5-65度的向下角度设置在从内缘朝向外缘的径向向外方向。

8. 发明申请

WO2008002909A3 METHOD AND APPARATUS FOR MULTI-CHAMBER EXHAUST CONTROL 审中-公开
公开(公告)号：WO2008002909A3
公开(公告)日：2008-01-03
申请号：PCT/US2007/072111
申请日：2007-06-26
申请人： SOKUDO CO., LTD. , TSENG, Ming-Kuei , RAMANAN, Natarajan , ISHIKAWA, Tetsuya , GONDHALEKAR, Sudhir, R.
发明人： TSENG, Ming-Kuei , RAMANAN, Natarajan , ISHIKAWA, Tetsuya , GONDHALEKAR, Sudhir, R.
IPC分类号： B05D3/04 , B05C11/02
摘要： A method of operating a multi-chamber module including a first chamber, a second chamber, and a dispense arm area positioned between the first chamber and the second chamber. The method includes flowing a process gas into the first chamber, the second chamber, and the dispense arm area. The method also includes exhausting a first gas from the first chamber using a first exhaust path in fluid communication with a shared exhaust, exhausting a second gas from the second chamber using a second exhaust path in fluid communication with the shared exhaust, and exhausting a third gas from the dispense arm area using a dispense arm area exhaust in fluid communication with the shared exhaust. The method further includes monitoring a first chamber pressure in the first chamber, a second chamber pressure in the second chamber, and a dispense pressure in the dispense arm area, and adjusting a flow through at least one of the first exhaust path, the second exhaust path, and the dispense arm area exhaust to maintain the first chamber pressure and the second chamber pressure at a value higher than the dispense pressure.

9. 发明申请

WO2008002909A2 METHOD AND APPARATUS FOR MULTI-CHAMBER EXHAUST CONTROL 审中-公开
标题翻译：多室排气控制方法与装置
公开(公告)号：WO2008002909A2
公开(公告)日：2008-01-03
申请号：PCT/US2007072111
申请日：2007-06-26
申请人： SOKUDO CO LTD , TSENG MING-KUEI , RAMANAN NATARAJAN , ISHIKAWA TETSUYA , GONDHALEKAR SUDHIR R
发明人： TSENG MING-KUEI , RAMANAN NATARAJAN , ISHIKAWA TETSUYA , GONDHALEKAR SUDHIR R
IPC分类号： G01F11/00 , B67B7/00
CPC分类号： G05D16/202 , H01L21/67017 , H01L21/6719
摘要： A method of operating a multi-chamber module including a first chamber, a second chamber, and a dispense arm area positioned between the first chamber and the second chamber. The method includes flowing a process gas into the first chamber, the second chamber, and the dispense arm area. The method also includes exhausting a first gas from the first chamber using a first exhaust path in fluid communication with a shared exhaust, exhausting a second gas from the second chamber using a second exhaust path in fluid communication with the shared exhaust, and exhausting a third gas from the dispense arm area using a dispense arm area exhaust in fluid communication with the shared exhaust. The method further includes monitoring a first chamber pressure in the first chamber, a second chamber pressure in the second chamber, and a dispense pressure in the dispense arm area, and adjusting a flow through at least one of the first exhaust path, the second exhaust path, and the dispense arm area exhaust to maintain the first chamber pressure and the second chamber pressure at a value higher than the dispense pressure.
摘要翻译：一种操作多室模块的方法，该多室模块包括位于第一室和第二室之间的第一室，第二室和分配臂区域。该方法包括使处理气体流入第一室，第二室和分配臂区域。该方法还包括使用与共用排气流体连通的第一排气路径从第一室排出第一气体，使用与共用排气流体连通的第二排气通道从第二室排出第二气体，以及排出第三气体来自分配臂区域的气体使用与共用排气流体连通的分配臂区域排气。该方法还包括监测第一室中的第一室压力，第二室中的第二室压力和分配臂区域中的分配压力，以及调节通过第一排气路径，第二排气中的至少一个的流量路径和分配臂区域排气以将第一室压力和第二室压力保持在高于分配压力的值。

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