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1. 发明申请

WO2013012562A3 METHODS AND APPARATUS FOR CONTROLLING POWER DISTRIBUTION IN SUBSTRATE PROCESSING SYSTEMS 审中-公开
标题翻译：用于控制基板处理系统中功率分配的方法和装置
公开(公告)号：WO2013012562A3
公开(公告)日：2013-04-04
申请号：PCT/US2012045496
申请日：2012-07-05
申请人： APPLIED MATERIALS INC , LAI CANFENG , ABERLE DAVID E , KAMP MICHAEL P , BARANDICA HENRY , HILKENE MARTIN A , SCOTNEY-CASTLE MATTHEW D , TOBIN JEFFREY , BURNS DOUGLAS H , HAWRYLCHAK LARA , PORSHNEV PETER I
发明人： LAI CANFENG , ABERLE DAVID E , KAMP MICHAEL P , BARANDICA HENRY , HILKENE MARTIN A , SCOTNEY-CASTLE MATTHEW D , TOBIN JEFFREY , BURNS DOUGLAS H , HAWRYLCHAK LARA , PORSHNEV PETER I
IPC分类号： H05H1/46 , H01L21/3065 , H03H7/40
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/32155 , H01J37/32174
摘要： Methods and apparatus for controlling power distribution in a substrate processing system are provided. In some embodiments, a substrate processing system including a process chamber having a substrate support and a processing region disposed above the substrate support; a first conduit disposed above the processing region to provide a portion of a first toroidal path that extends through the first conduit and across the processing region; a second conduit disposed above the processing region to provide a portion of a second toroidal path that extends through the second conduit and across the processing region; an RF generator coupled to the first and second conduits to provide RF energy having a first frequency to each of the first and second conduits; an impedance matching network disposed between the RF generator and the first and second conduits; and a power divider to control the amount of RF energy provided to the first and second conduits from the RF generator.
摘要翻译：提供了一种用于控制基板处理系统中的配电的方法和装置。在一些实施例中，衬底处理系统包括具有衬底支撑件的处理室和设置在衬底支架上方的处理区域; 设置在所述处理区域上方以提供延伸穿过所述第一管道并横跨所述处理区域的第一环形路径的一部分的第一管道; 设置在所述处理区域上方的第二导管，以提供延伸穿过所述第二导管并横跨所述处理区域的第二环形路径的一部分; 耦合到所述第一和第二导管的RF发生器，以向所述第一和第二导管中的每一个提供具有第一频率的RF能量; 设置在所述RF发生器与所述第一和第二管道之间的阻抗匹配网络; 以及功率分配器，用于控制从RF发生器提供给第一和第二导管的RF能量的量。

2. 发明申请

WO2011109337A2 PHYSICAL VAPOR DEPOSITION WITH A VARIABLE CAPACITIVE TUNER AND FEEDBACK CIRCUIT 审中-公开
标题翻译：具有可变电容调谐器和反馈电路的物理蒸气沉积
公开(公告)号：WO2011109337A2
公开(公告)日：2011-09-09
申请号：PCT/US2011026601
申请日：2011-03-01
申请人： APPLIED MATERIALS INC , RASHEED MUHAMMAD M , DEDORE RONALD D , COX MICHAEL S , MILLER KEITH A , YOUNG DONNY , FORSTER JOHN C , ALLEN ADOLPH M , HAWRYLCHAK LARA
发明人： RASHEED MUHAMMAD M , DEDORE RONALD D , COX MICHAEL S , MILLER KEITH A , YOUNG DONNY , FORSTER JOHN C , ALLEN ADOLPH M , HAWRYLCHAK LARA
CPC分类号： H01J37/3444 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/3438
摘要： Apparatus and methods for performing plasma processing on a wafer supported on a pedestal are provided. The apparatus can include a pedestal on which the wafer can be supported, a variable capacitor having a variable capacitance, a motor attached to the variable capacitor which varies the capacitance of the variable capacitor, a motor controller connected to the motor that causes the motor to rotate, and an output from the variable capacitor connected to the pedestal. A desired state of the variable capacitor is associated with a process recipe in a process controller. When the process recipe is executed the variable capacitor is placed in the desired state.
摘要翻译：提供了在支撑在基座上的晶片上进行等离子体处理的装置和方法。该装置可以包括可以支撑晶片的基座，具有可变电容的可变电容器，附接到可变电容器的电动机，其改变可变电容器的电容;连接到电动机的电动机控制器，其使电动机旋转，以及连接到基座的可变电容器的输出。可变电容器的期望状态与过程控制器中的过程配方相关联。当执行处理配方时，将可变电容器置于所需状态。

3. 发明申请

WO2009135050A3 PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION 审中-公开
标题翻译： RF物理蒸气沉积工艺套件
公开(公告)号：WO2009135050A3
公开(公告)日：2010-02-18
申请号：PCT/US2009042387
申请日：2009-04-30
申请人： APPLIED MATERIALS INC , YOUNG DONNY , HAWRYLCHAK LARA
发明人： YOUNG DONNY , HAWRYLCHAK LARA
IPC分类号： H01L21/203
CPC分类号： H01J37/32651 , C23C14/35 , H01J37/32082 , H01J37/32623 , H01J37/32642 , H01J37/3441
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供改进的等离子体容纳物。

4. 发明申请

WO2011094100A3 ADJUSTABLE PROCESS SPACING, CENTERING, AND IMPROVED GAS CONDUCTANCE 审中-公开
标题翻译：可调整的工艺间隔，中心和改进的气体导电性
公开(公告)号：WO2011094100A3
公开(公告)日：2011-12-29
申请号：PCT/US2011021700
申请日：2011-01-19
申请人： APPLIED MATERIALS INC , HAWRYLCHAK LARA , SAVANDAIAH KIRANKUMAR
发明人： HAWRYLCHAK LARA , SAVANDAIAH KIRANKUMAR
IPC分类号： H01L21/203
CPC分类号： H01J37/3411 , C23C14/34 , C23C14/564 , C23C16/4585 , H01J37/32477 , H01J37/32623 , H01L21/68714 , H01L21/68721 , Y10T428/12528
摘要： Embodiments of the invention generally provide a process kit for use in a physical deposition chamber (PVD) chamber. In one embodiment, the process kit provides adjustable process spacing, centering between the cover ring and the shield, and controlled gas flow between the cover ring and the shield contributing to uniform gas distribution, which promotes greater process uniformity and repeatability along with longer chamber component service life.
摘要翻译：本发明的实施例通常提供用于物理沉积室（PVD）腔室的处理套件。在一个实施例中，处理套件提供可调节的工艺间隔，围绕盖环和防护罩之间的中心，以及在盖环和防护罩之间的受控气体流动，有助于均匀的气体分布，这促进了更长的工艺均匀性和可重复性以及更长的腔室部件使用寿命。

5. 发明申请

WO2010115128A4 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
公开(公告)号：WO2010115128A4
公开(公告)日：2011-03-03
申请号：PCT/US2010029815
申请日：2010-04-02
申请人： APPLIED MATERIALS INC , ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
发明人： ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： C23C14/564 , C23C14/345 , C23C14/3492 , C23C14/35 , C23C14/548 , H01J37/32642 , H01J37/3405 , H01J37/3408 , H01J37/3441 , H01J37/3455
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

6. 发明申请

WO2010115128A2 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
标题翻译：高压RF-DC溅射和改善膜过程的均匀性和步骤的方法
公开(公告)号：WO2010115128A2
公开(公告)日：2010-10-07
申请号：PCT/US2010029815
申请日：2010-04-02
申请人： APPLIED MATERIALS INC , ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
发明人： ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： C23C14/564 , C23C14/345 , C23C14/3492 , C23C14/35 , C23C14/548 , H01J37/32642 , H01J37/3405 , H01J37/3408 , H01J37/3441 , H01J37/3455
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.
摘要翻译：本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

7. 发明申请

WO2012024061A3 EXTENDED LIFE DEPOSITION RING 审中-公开
标题翻译：延长生命沉积环
公开(公告)号：WO2012024061A3
公开(公告)日：2012-04-26
申请号：PCT/US2011045223
申请日：2011-07-25
申请人： APPLIED MATERIALS INC , HAWRYLCHAK LARA
发明人： HAWRYLCHAK LARA
IPC分类号： H01L21/205 , H01L21/203
CPC分类号： B05B15/0437 , C23C16/4585 , H01L21/68735
摘要： A process kit for a semiconductor processing chamber is provided. In one embodiment, a process kit includes an annular deposition ring body comprising a trough recessed into an upper surface of the body wherein a lowest point of the trough extends to at least half of the thickness of the ring body as defined by a top wall and a bottom wall. In another embodiment, a process kit includes an annular deposition ring body comprising a sloped upper wall defining at least a portion of an upper surface of the body, wherein a peak of the sloped upper wall extends from an inner wall of the body to at least half of a distance between the inner wall and an outer wall of the body.
摘要翻译：提供了一种用于半导体处理室的处理套件。在一个实施例中，处理套件包括环形沉积环主体，其包括凹入主体的上表面的槽，其中槽的最低点延伸到由顶壁限定的至少一半的环体的厚度，一个底壁。在另一个实施例中，处理套件包括环形沉积环体，其包括限定主体上表面的至少一部分的倾斜上壁，其中，倾斜的上壁的峰从主体的内壁延伸至至少内壁与身体外壁之间的一半距离。

8. 发明申请

WO2011123399A2 APPARATUS FOR PHYSICAL VAPOR DEPOSITION HAVING CENTRALLY FED RF ENERGY 审中-公开
标题翻译：具有中央射频能量的物理蒸气沉积装置
公开(公告)号：WO2011123399A2
公开(公告)日：2011-10-06
申请号：PCT/US2011030226
申请日：2011-03-28
申请人： APPLIED MATERIALS INC , RASHEED MUHAMMAD , HAWRYLCHAK LARA , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , RITCHIE ALAN
发明人： RASHEED MUHAMMAD , HAWRYLCHAK LARA , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , RITCHIE ALAN
IPC分类号： C23C14/34 , C23C14/54
CPC分类号： H01J37/3405 , H01J37/3411
摘要： In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.
摘要翻译：在一些实施例中，将RF能量耦合到目标的馈送结构可以包括具有接收RF能量的第一端的主体和与第一端相对的第二端以将RF能量耦合到目标，所述主体还具有中心开口从第一端至第二端穿过本体; 第一构件，其在所述第一端处联接到所述主体，其中所述第一构件包括限定所述主体并且从所述主体径向向外延伸的第一元件以及设置在所述第一构件中以从RF电源接收RF能量的一个或多个端子 ; 以及耦合到所述主体的第二端以将RF能量分配到所述目标的源分布板，其中所述源分配板包括穿过所述板布置并与所述主体的中心开口对准的孔。

9. 发明申请

WO2011019566A3 PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION 审中-公开
标题翻译：用于射频物理气相沉积的工艺成套工具
公开(公告)号：WO2011019566A3
公开(公告)日：2011-07-07
申请号：PCT/US2010044420
申请日：2010-08-04
申请人： APPLIED MATERIALS INC , HAWRYLCHAK LARA , SAVANDAIAH KIRANKUMAR , RASHEED MUHAMMAD M , WANG RONGJUN , ALLEN ADOLPH MILLER , XIE ZHIGANG
发明人： HAWRYLCHAK LARA , SAVANDAIAH KIRANKUMAR , RASHEED MUHAMMAD M , WANG RONGJUN , ALLEN ADOLPH MILLER , XIE ZHIGANG
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： H01L21/67017 , C23C14/34 , C23C14/564 , H01J37/3408 , H01J37/3447
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的处理套件以及具有套件的半导体处理室。更具体地说，这里描述的实施例涉及一种工艺套件，其包括用于物理沉积室中的盖环，屏蔽件和隔离器。处理工具包的组件单独使用并结合使用，可显着减少颗粒产生和杂散等离子体。与现有的多部分屏蔽件相比，这些屏蔽件提供了扩展的RF返回路径，这些RF返回路径导致RF谐波，从而在处理腔外部引起杂散等离子体，处理套件的组件减少了RF返回路径，从而改善了内部处理区域中的等离子体遏制。

10. 发明申请

WO2010115128A3 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
标题翻译：高压RF-DC溅射和改善膜过程的均匀性和步骤的方法
公开(公告)号：WO2010115128A3
公开(公告)日：2011-01-13
申请号：PCT/US2010029815
申请日：2010-04-02
申请人： APPLIED MATERIALS INC , ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
发明人： ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： C23C14/564 , C23C14/345 , C23C14/3492 , C23C14/35 , C23C14/548 , H01J37/32642 , H01J37/3405 , H01J37/3408 , H01J37/3441 , H01J37/3455
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.
摘要翻译：本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

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