专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2010115128A4 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
公开(公告)号：WO2010115128A4
公开(公告)日：2011-03-03
申请号：PCT/US2010029815
申请日：2010-04-02
申请人： APPLIED MATERIALS INC , ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
发明人： ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： C23C14/564 , C23C14/345 , C23C14/3492 , C23C14/35 , C23C14/548 , H01J37/32642 , H01J37/3405 , H01J37/3408 , H01J37/3441 , H01J37/3455
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

2. 发明申请

WO2010115128A2 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
标题翻译：高压RF-DC溅射和改善膜过程的均匀性和步骤的方法
公开(公告)号：WO2010115128A2
公开(公告)日：2010-10-07
申请号：PCT/US2010029815
申请日：2010-04-02
申请人： APPLIED MATERIALS INC , ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
发明人： ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： C23C14/564 , C23C14/345 , C23C14/3492 , C23C14/35 , C23C14/548 , H01J37/32642 , H01J37/3405 , H01J37/3408 , H01J37/3441 , H01J37/3455
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.
摘要翻译：本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

3. 发明申请

WO2010115128A3 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
标题翻译：高压RF-DC溅射和改善膜过程的均匀性和步骤的方法
公开(公告)号：WO2010115128A3
公开(公告)日：2011-01-13
申请号：PCT/US2010029815
申请日：2010-04-02
申请人： APPLIED MATERIALS INC , ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
发明人： ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： C23C14/564 , C23C14/345 , C23C14/3492 , C23C14/35 , C23C14/548 , H01J37/32642 , H01J37/3405 , H01J37/3408 , H01J37/3441 , H01J37/3455
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.
摘要翻译：本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

4. 发明申请

WO2011019566A3 PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION 审中-公开
标题翻译：用于射频物理气相沉积的工艺成套工具
公开(公告)号：WO2011019566A3
公开(公告)日：2011-07-07
申请号：PCT/US2010044420
申请日：2010-08-04
申请人： APPLIED MATERIALS INC , HAWRYLCHAK LARA , SAVANDAIAH KIRANKUMAR , RASHEED MUHAMMAD M , WANG RONGJUN , ALLEN ADOLPH MILLER , XIE ZHIGANG
发明人： HAWRYLCHAK LARA , SAVANDAIAH KIRANKUMAR , RASHEED MUHAMMAD M , WANG RONGJUN , ALLEN ADOLPH MILLER , XIE ZHIGANG
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： H01L21/67017 , C23C14/34 , C23C14/564 , H01J37/3408 , H01J37/3447
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的处理套件以及具有套件的半导体处理室。更具体地说，这里描述的实施例涉及一种工艺套件，其包括用于物理沉积室中的盖环，屏蔽件和隔离器。处理工具包的组件单独使用并结合使用，可显着减少颗粒产生和杂散等离子体。与现有的多部分屏蔽件相比，这些屏蔽件提供了扩展的RF返回路径，这些RF返回路径导致RF谐波，从而在处理腔外部引起杂散等离子体，处理套件的组件减少了RF返回路径，从而改善了内部处理区域中的等离子体遏制。

5. 发明申请

WO2008156794A2 SPUTTERING TARGET HAVING INCREASED LIFE AND SPUTTERING UNIFORMITY 审中-公开
标题翻译：具有增加生命和突破性的飞溅目标
公开(公告)号：WO2008156794A2
公开(公告)日：2008-12-24
申请号：PCT/US2008007611
申请日：2008-06-18
申请人： APPLIED MATERIALS INC , ALLEN ADOLPH MILLER , YOON KI HWAN , GUO TED , YANG HONG S , YU SANG-HO
发明人： ALLEN ADOLPH MILLER , YOON KI HWAN , GUO TED , YANG HONG S , YU SANG-HO
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , H01J37/3423 , H01J37/3435
摘要： A sputtering target for a sputtering chamber comprises a backing plate with a sputtering plate mounted thereon. In one version, the backing plate comprises a circular plate having a front surface comprising an annular groove. The sputtering plate comprises a disk comprising a sputtering surface and a backside surface having a circular ridge that is shaped and sized to fit into the annular groove of the backing plate.
摘要翻译：溅射室的溅射靶包括安装有溅射板的背板。在一个版本中，背板包括具有包括环形凹槽的前表面的圆形板。溅射板包括一个盘，该盘包括溅射表面和具有圆形脊的背面，该圆形脊的形状和尺寸适于装配到背板的环形槽中。

6. 发明申请

WO2007092677A2 METHOD FOR PLASMA IGNITION 审中-公开
标题翻译：等离子体点火方法
公开(公告)号：WO2007092677A2
公开(公告)日：2007-08-16
申请号：PCT/US2007060957
申请日：2007-01-24
申请人： APPLIED MATERIALS INC , RITCHIE ALAN ALEXANDER , ALLEN ADOLPH MILLER
发明人： RITCHIE ALAN ALEXANDER , ALLEN ADOLPH MILLER
CPC分类号： H01J37/32009
摘要： A method for igniting a plasma in a semiconductor process chamber is provided herein. In one embodiment, a method for igniting a plasma in a semiconductor substrate process chamber having an electrically isolated anode, wherein the plasma has failed to ignite upon applying a plasma ignition voltage to a cathode of the process chamber, includes the steps of reducing the magnitude of the voltage applied to the cathode; reapplying the plasma ignition voltage to the cathode; and monitoring the process chamber to determine if the plasma has ignited. The step of monitoring the process chamber may have a duration of a first period of time. The step of reducing the magnitude of the voltage applied to the cathode may have a duration of a second period of time. The steps of reducing the cathode voltage magnitude and reapplying the plasma ignition voltage may be repeated until a plasma ignites.
摘要翻译：本文提供了一种用于点燃半导体处理室中的等离子体的方法。在一个实施例中，一种用于点燃具有电隔离阳极的半导体衬底处理室中的等离子体的方法，其中等离子体在将等离子体点火电压施加到处理室的阴极时不能点燃，包括降低幅度的步骤施加到阴极的电压; 将等离子体点火电压重新施加到阴极; 并监测处理室以确定等离子体是否已点燃。监测处理室的步骤可以具有第一时间段的持续时间。降低施加到阴极的电压的大小的步骤可以具有第二时间段的持续时间。可以重复降低阴极电压幅度并重新施加等离子体点火电压的步骤，直到等离子体点燃。

7. 发明公开

KR20180051662A 전도성 상호연결 구조들을 사전-세정하기 위한 방법들 审中-公开
公开(公告)号：KR20180051662A
公开(公告)日：2018-05-16
申请号：KR20187012591
申请日：2016-09-20
申请人： APPLIED MATERIALS INC
发明人： XIE XIANGJIN , LIU FENG Q , YAO DAPING , JANSEN ALEXANDER , LEE JOUNG JOO , ALLEN ADOLPH MILLER , TANG XIANMIN , CHANG MEI
IPC分类号： C23G5/04 , C11D7/26 , C11D17/00 , C23G3/00 , C23G5/032 , H05K3/26
CPC分类号： H01L21/76814 , B08B3/00 , B08B3/106 , B08B5/00 , B08B7/0035 , B08B9/00 , B08B9/027 , C23G1/24 , F01D5/005 , F05D2230/90 , H01L21/02063 , H01L21/02068
摘要： 기판을프로세싱하기위한방법들이본원에서제공된다. 일부실시예들에서, 기판을프로세싱하는방법은: 기판프로세싱챔버의프로세싱볼륨내에배치된기판을최대약 섭씨 400 도의온도로가열하는단계―기판은노출된전도성재료를포함함―; 및전도성재료의오염된표면을환원시키기위해, 약 80 wt. % 내지약 100 wt. %의알코올증기를포함하는프로세스가스에기판을노출시키는단계를포함한다. 일부실시예들에서, 기판은제1 표면을더 포함하고, 제1 표면은제1 표면에형성된개구를가지며, 노출된전도성재료는기판에배치된전도성재료의일부이며, 노출된전도성재료가개구와정렬되어서, 기판에배치된전도성재료의부분이개구를통해노출된다.

8. 发明专利

SG10202108705SA PROCESS KIT HAVING TALL DEPOSITION RING AND DEPOSITION RING CLAMP 未知
公开(公告)号：SG10202108705SA
公开(公告)日：2021-09-29
申请号：SG10202108705S
申请日：2016-07-01
申请人： APPLIED MATERIALS INC
发明人： JOHANSON WILLIAM , SAVANDAIAH KIRANKUMAR , ALLEN ADOLPH MILLER , WANG XIN , PRABHU PRASHANT
摘要： Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes a deposition ring configured to be disposed on a substrate support designed to support a substrate having a given width, including: an annular band configured to rest on a lower ledge of the substrate support; an inner lip extending upwardly from an inner edge of the annular band, wherein an inner surface of the inner lip and an inner surface of the annular band together form a central opening having a width that is less than the given width, and wherein a depth between an upper surface of the annular band and an upper surface of the inner lip is between about 24 mm and about 38 mm; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

9. 发明专利

SG10201709183PA PATTERN FORTIFICATION FOR HDD BIT PATTERNED MEDIA PATTERN TRANSFER 未知
公开(公告)号：SG10201709183PA
公开(公告)日：2017-12-28
申请号：SG10201709183P
申请日：2013-11-05
申请人： APPLIED MATERIALS INC
发明人： GOUK ROMAN , VERHAVERBEKE STEVEN , KONTOS ALEXANDER , ALLEN ADOLPH MILLER , MORAES KEVIN
摘要： A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.

10. 发明专利

SG11201502955SA PATTERN FORTIFICATION FOR HDD BIT PATTERNED MEDIA PATTERN TRANSFER 未知
公开(公告)号：SG11201502955SA
公开(公告)日：2015-06-29
申请号：SG11201502955S
申请日：2013-11-05
申请人： APPLIED MATERIALS INC
发明人： GOUK ROMAN , VERHAVERBEKE STEVEN , KONTOS ALEXANDER , ALLEN ADOLPH MILLER , MORAES KEVIN
IPC分类号： G11C11/15
摘要： A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式