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1. 发明申请

WO2006055460A3 POST-ETCH TREATMENT TO REMOVE RESIDUES 审中-公开
标题翻译：消除后处理以消除残留
公开(公告)号：WO2006055460A3
公开(公告)日：2007-04-12
申请号：PCT/US2005041084
申请日：2005-11-10
申请人： APPLIED MATERIALS INC , CHIANG KANG-LIE , CAI MAN-PING , MA SHAWMING , YE YAN , HSIEH PETER
发明人： CHIANG KANG-LIE , CAI MAN-PING , MA SHAWMING , YE YAN , HSIEH PETER
IPC分类号： H01L21/02 , H01L21/306 , H01L21/3065 , H01L21/768
CPC分类号： C23F4/00 , B08B7/00 , H01L21/02063 , H01L21/31116 , H01L21/76808 , H01L21/76814
摘要： A method for removing residue from a layer of conductive material on a substrate is provided herein. In one embodiment, the method includes introducing a process gas into a vacuum chamber having a substrate surface with residue from exposure to a fluorine-containing environment. The process gas includes a hydrogen-containing gas. Optionally, the process gas may further include an oxygen-containing or a nitrogen containing gas. A plasma of the process gas is thereafter maintained in the vacuum chamber for a predetermined period of time to remove the residue from the surface. The temperature of the substrate is maintained at a temperature between about 10 degrees Celsius and about 90 degrees Celsius during the plasma step.
摘要翻译：本文提供了用于从基底上的导电材料层除去残余物的方法。在一个实施方案中，该方法包括将工艺气体引入真空室，该真空室具有残留物暴露于含氟环境的基底表面。工艺气体包括含氢气体。任选地，工艺气体还可以包括含氧气体或含氮气体。然后将该工艺气体的等离子体在真空室中保持预定的时间以从表面除去残余物。在等离子体步骤期间，基板的温度保持在约10摄氏度和约90摄氏度之间的温度。

2. 发明申请

WO03103004A2 A CATHODE PEDESTAL FOR A PLASMA ETCH REACTOR 审中-公开
标题翻译：用于等离子体蚀刻反应器的CATHODE PEDESTAL
公开(公告)号：WO03103004A2
公开(公告)日：2003-12-11
申请号：PCT/US0317477
申请日：2003-06-03
申请人： APPLIED MATERIALS INC
发明人： YANG JANG GYOO , LUE BRIAN C , BUCHBERGER DOUGLAS A JR , TAVASSOLI HAMID , CHAE HEEYEOP , HOFFMAN DANIEL J , ISHIKAWA TETSUYA , KATS SEMYON L , CHIANG KANG-LIE
IPC分类号： H05H1/46 , H01J37/32 , H01L21/00 , H01L21/306 , H01L21/3065 , H01L21/687 , H01L21/68
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32532 , H01J37/32706 , H01L21/68735 , H01L21/68785
摘要： Various embodiments of the present invention are generally directed to a plasma etch reactor. In one embodiment, the reactor includes a chamber, a pedestal disposed within the chamber, a gas distribution plate disposed within the chamber overlying the pedestal, a ring surrounding the pedestal, and an upper electrically conductive mesh layer and a lower electrically conductive mesh layer disposed within the pedestal. The ring has a raised portion. The upper electrically conductive mesh layer is disposed substantially above the lower electrically conductive mesh layer and is substantially the same size as a substrate configured to be disposed on the pedestal. The lower electrically conductive mesh layer is substantially annular in shape and is disposed around the periphery of the upper electrically conductive mesh layer and below the raised portion of the ring.
摘要翻译：本发明的各种实施方案通常涉及等离子体蚀刻反应器。在一个实施例中，反应器包括室，设置在室内的基座，设置在覆盖基座的腔室内的气体分配板，围绕基座的环，以及设置在上部导电网状物层和下部导电网层在基座内。环有凸起部分。上部导电网状物层设置在下部导电网状物层的大致上方，并且与构造成设置在基座上的基板大致相同的尺寸。下导电网格层的形状基本上是环形的，并且设置在上部导电网格层的周边周围并且在环的隆起部分的下方。

3. 发明申请

WO0049649A3 METHOD FOR PREVENTING CORROSION OF A DIELECTRIC MATERIAL 审中-公开
标题翻译：防止介电材料腐蚀的方法
公开(公告)号：WO0049649A3
公开(公告)日：2000-12-07
申请号：PCT/US0004019
申请日：2000-02-16
申请人： APPLIED MATERIALS INC
发明人： HWANG JENG H , CHIANG KANG-LIE , JIN GUANGXIANG
IPC分类号： H01L21/302 , H01L21/02 , H01L21/304 , H01L21/3065 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/02071 , H01L21/31122 , H01L28/55 , H01L28/60
摘要： Method for removing or inactivating corrosion-forming etch residues remaining on the surface of a dielectric material after etching a metal layer which is supported by the dielectric material. The surface of the dielectric material which supports the corrosion-forming etch residues is post-etch treated in order to remove the corrosion-forming etch residues. Post-etch treating of the surface of the dielectric material includes disposing the dielectric material in a vacuum chamber having microwave downstream treating gas plasma, or contacting the surface of the dielectric material with deionized water.
摘要翻译：在蚀刻由电介质材料支撑的金属层之后去除或钝化保留在电介质材料表面上的腐蚀形成蚀刻残余物的方法。支撑腐蚀形成腐蚀残留物的介电材料表面被腐蚀后处理以除去腐蚀形成腐蚀残留物。介电材料表面的蚀刻后处理包括将介电材料设置在具有微波下游处理气体等离子体的真空室中，或者将介电材料的表面与去离子水接触。

4. 发明申请

WO2004023510A3 CAPACITIVELY COUPLED PLASMA REACTOR WITH UNIFORM RADIAL DISTRIBUTION OF PLASMA 审中-公开
标题翻译：具有均匀的等离子体辐射分布的电容耦合等离子体反应器
公开(公告)号：WO2004023510A3
公开(公告)日：2006-07-13
申请号：PCT/US0327538
申请日：2003-09-03
申请人： APPLIED MATERIALS INC
发明人： YANG JANG GYOO , HOFFMAN DANIEL J , CARDUCCI JAMES D , BUCHBERGER DOUGLAS A JR , HAGEN ROBERT B , MILLER MATTHEW L , CHIANG KANG-LIE , DELGADINO GERARDO A
IPC分类号： C23C16/00 , H01J37/32
CPC分类号： H01J37/32082 , H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor for processing a semiconductor wafer (20) includes a wall (5) and an overhead ceiling (10) defining a chamber, a workpiece support cathode (105) within the chamber having a surface facing the ceiling (10) for supporting a process gas inlets for introducing process gas (25) into the chamber and an RF bias power generator (40) having a bias power frequency. There is a bias power feed at the working surface and an RF conductor is connected between the RF bias power generator and the bias power feed point at the working surface. A dielectric sleeve surrounds a portion of conductor, the sleeve having an axial length along the RF conductor, a dielectric constant and an axial location along the RF conductor, the length, dielectric constant and location of the sleeve being such that the sleeve provides a reactance that enhances plasma ion density uniformity over the working surface. In accordance with a further aspect, the reactor can include an annular RF having an inner diameter corresponding generally to a periphery of the workpiece, the RF coupling ring extending a sufficient portion of a distance between the working surface and the overhead electrode to enhance plasma density near a periphery of workpiece.
摘要翻译：一种用于处理半导体晶片（20）的等离子体反应器包括壁（5）和限定腔室的顶部顶板（10），腔室内的工件支撑阴极（105）具有面向天花板（10）的表面，用于支撑用于将工艺气体（25）引入室的工艺气体入口和具有偏置功率频率的RF偏置功率发生器（40）。在工作表面上存在偏置的馈电，并且RF导体连接在RF偏置功率发生器和工作表面处的偏置功率馈送点之间。电介质套筒围绕导体的一部分，套管具有沿着RF导体的轴向长度，介电常数和沿着RF导体的轴向位置，套筒的长度，介电常数和位置使得套筒提供电抗这增强了工作表面上的等离子体离子密度均匀性。根据另一方面，反应器可以包括具有大致对应于工件周边的内径的环形RF，RF耦合环在工作表面和顶置电极之间延伸足够的距离部分以提高等离子体密度靠近工件的周边。

5. 发明申请

WO0007215A3 A METHOD OF ALLOWING A STABLE POWER TRANSMISSION INTO A PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：允许稳定的电力传输进入等离子体加工室的方法
公开(公告)号：WO0007215A3
公开(公告)日：2002-10-17
申请号：PCT/US9916888
申请日：1999-07-26
申请人： APPLIED MATERIALS INC
发明人： HWANG JENG H , MAK STEVE S Y , CHIANG KANG-LIE
IPC分类号： H05H1/46 , C23C16/44 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32504 , H01J37/321 , H01J37/32174
摘要： A method of processing a metal layer on a substrate. The method comprises disposing the substrate in a chamber having a dielectric member and processing gas. An interior surface of the dielectric member is heated to a temperature above about 150 DEG C and the metal layer is processed when processing power is passed through the heated dielectric member. Heating of the interior surface of the dielectric member essentially prevents deposits from forming on the interior surface and allows a stable power transmission through the dielectric member.
摘要翻译：一种在基板上处理金属层的方法。该方法包括将基底设置在具有电介质构件和处理气体的腔室中。电介质构件的内表面被加热到高于约150℃的温度，并且当处理电力通过加热的电介质构件时金属层被加工。电介质构件的内表面的加热基本上防止沉积物在内表面上形成并且允许通过电介质构件的稳定的电力传输。

6. 发明申请

WO0049202A2 IMPROVED ETCHING METHODS FOR ANISOTROPIC PLATINUM PROFILE 审中-公开
标题翻译：改进各向异性铂形貌的蚀刻方法
公开(公告)号：WO0049202A2
公开(公告)日：2000-08-24
申请号：PCT/US0004015
申请日：2000-02-16
申请人： APPLIED MATERIALS INC
发明人： HWANG JENG H , YING CHENTSAU , CHIANG KANG-LIE , MAK STEVE S Y
IPC分类号： H01L21/28 , C23F4/00 , H01L21/02 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , C23F
CPC分类号： H01L28/60 , C23F4/00 , H01L21/32136 , H01L21/32139
摘要： A method for etching a platinum electrode layer disposed on a substrate to produce a semiconductor device including a plurality of platinum electrodes. The method comprises heating the substrate to a temperature greater than about 150 DEG C, and etching the platinum electrode layer by employing a plasma of an etchant gas comprising nitrogen and a halogen (e.g. chlorine), and a gas selected from the group consisting of a noble gas (e.g. argon), BCl3, HBr, SiCl4 and mixtures thereof. The substrate may be heated in a reactor chamber having a dielectric window including a deposit-receiving surface having a surface finish comprising a peak-to-valley roughness height with an average height value of greater than about 1000 ANGSTROM .
摘要翻译：一种蚀刻设置在基板上的铂电极层的方法，以制造包括多个铂电极的半导体器件。该方法包括将衬底加热到大于约150℃的温度，并且通过采用包含氮和卤素（例如氯）的蚀刻剂气体的等离子体蚀刻铂电极层，以及选自以下的气体：惰性气体（例如氩），BCl 3，HBr，SiCl 4及其混合物。可以在具有电介质窗口的反应室中加热衬底，该电介质窗口包括具有表面光洁度的沉积物接收表面，该表面光洁度包括平均高度值大于约1000埃的峰谷表面粗糙度高度。

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