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1. 发明专利

JP2008147668A Two step etching of bottom anti-reflective coating layer in dual damascene application 有权
标题翻译：双层抗蚀涂层应用中双层抗反射涂层的两步蚀刻
公开(公告)号：JP2008147668A
公开(公告)日：2008-06-26
申请号：JP2007316730
申请日：2007-12-07
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： HUANG ZHILIN , LI SIYI , DELGADINO GERARDO A
IPC分类号： H01L21/3065 , H01L21/768
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76808
摘要： PROBLEM TO BE SOLVED: To provide a method for removing a BARC (Bottom Anti-Reflective Coating) layer from a feature.
SOLUTION: In one embodiment, the method includes steps of providing a substrate having a feature filled with a BARC layer in an etching chamber, supplying a first gas mixture containing NH
3 gas into the chamber to etch a first portion of the BARC layer filling in the feature, and supplying a second gas mixture containing O
2 gas into the etching chamber to etch the remaining portion of the BARC layer provided in the feature.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供从特征中去除BARC（底部防反射涂层）层的方法。解决方案：在一个实施例中，该方法包括以下步骤：在蚀刻室中提供具有填充有BARC层的特征的衬底，将包含NH 3 SB 3气体的第一气体混合物供应到腔室中蚀刻填充在特征中的BARC层的第一部分，以及将含有O 2 SB 2气体的第二气体混合物供应到蚀刻室中以蚀刻在特征中提供的BARC层的剩余部分。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2008218997A Removal of process residues on backside of substrate 审中-公开
标题翻译：去除衬底背面的工艺残留物
公开(公告)号：JP2008218997A
公开(公告)日：2008-09-18
申请号：JP2008028232
申请日：2008-02-07
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： DELGADINO GERARDO A , LAHIRI INDRAJIT , SU TEH-TIEN , SHIEH SY-YUAN BRIAN , SINHA ASHOK
IPC分类号： H01L21/3065
CPC分类号： H01L21/0209
摘要： PROBLEM TO BE SOLVED: To process a substrate in a processing chamber comprising a substrate support, having a receiving surface for receiving a substrate so that a front surface of the substrate is exposed within the chamber.
SOLUTION: An excited process gas is used to process the front surface of the substrate. A peripheral edge of the backside surface of the substrate is cleaned, by raising the substrate above the receiving surface of the substrate support to a raised position, and exposing the backside surface of the substrate to an energized cleaning gas.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：在包括基板支撑件的处理室中处理基板，具有用于接收基板的接收表面，使得基板的前表面暴露在室内。解决方案：使用激发的工艺气体来处理衬底的前表面。通过将基板支撑体的接收表面上方的基板升高到升高位置，并将基板的背面暴露于带电的清洁气体来清洁基板的背面的周边边缘。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2006165558A Dielectric etching method by high supply low impact plasma giving high etching rate 审中-公开
标题翻译：高电压等离子体电弧蚀刻方法
公开(公告)号：JP2006165558A
公开(公告)日：2006-06-22
申请号：JP2005350899
申请日：2005-12-05
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： DELGADINO GERARDO A , HSIEH CHANG-LIN , YE YAN , SHIM HYUNJONG
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , C09K13/00 , H01L21/31122
摘要： PROBLEM TO BE SOLVED: To provide an etching method giving an increase in etching rate while maintaining the allowable level of the quality of a product. SOLUTION: In at least some embodiments, the invention is a plasma etching method comprising steps of applying a gas mixture of CF 4 , N 2 , and Ar and forming high density low impact energy plasma. The high-density low impact energy plasma is formed by using high supply low bias electric power setting. The gas mixture can comprise H 2 , NH 3 , hydrofluorocarbon gas, and/or fluorocarbon gas. The hydrofluorocarbon gas can comprise CH 2 F 2 , CH 3 F, and/or CHF 3 . The fluorocarbon gas can comprise C 4 F 8 , C 4 F 6 , and/or C 5 F 8 . COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供蚀刻速率提高的蚀刻方法，同时保持产品质量的允许水平。解决方案：在至少一些实施方案中，本发明是一种等离子体蚀刻方法，其包括以下步骤：施加CF 4 SB，N SB 2和/或SB的气体混合物，并形成高密度低冲击能量等离子体。高密度低冲击能量等离子体通过使用高电源低偏置电力设置形成。气体混合物可以包含H 2 SB 3，NH 3 SB 3，氢氟烃气体和/或碳氟化合物气体。氢氟烃气体可以包括CH 2，SB 3，SB 3，和/或CHF 3 SB。碳氟化合物气体可以包含C 4 SB 8，SB 6，SB 6，SB 3， 5 ˚F 8 。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

MY137059A METHOD OF FORMING A LOW-K DUAL DAMASCENE INTERCONNECT STRUCTURE 未知
公开(公告)号：MY137059A
公开(公告)日：2008-12-31
申请号：MYPI20035033
申请日：2003-12-30
申请人： APPLIED MATERIALS INC
发明人： DELGADINO GERARDO A , TIAN FANG , ZHU WEN , YEAH ELLIE , YE YAN , SHIN NEUNGHO , KIM YUNSANG , XIA LI-QUN , HUANG TZU-FANG , LI LIHUA , CHIU JOEY , ZHAO XIAOYE
IPC分类号： H01L21/768
摘要： A METHOD OF FABRICATING AN INTERCONNECT STRUCTURE COMPRISING ETCHING A VIA INTO AN UPPER LOW K DIELECTRIC LAYER (208) AND INTO A HARDENED PORTION OF A LOWER LOW K DIELECTRIC LAYER (204). THE VIA (222) IS DEFINED BY A PATTERN FORMED IN A PHOTORESIST (218) LAYER. THE PHOTORESIST LAYER IS THEN STRIPPED, AND A TRENCH (220) THAT CIRCUMSCRIBES THE VIA AS DEFINED BY A HARD MASK (212) IS ETCHED INTO THE UPPER LOW K DIELECTRIC LAYER (208) AND, SIMULTANEOUSLY, THE VIA (222) THAT WAS ETCHED INTO THE HARDENED PORTION OF THE LOWER LOW K DIELECTRIC LAYER (204) IS FURTHER ETCHED INTO THE LOWER LOW K DIELECTRIC LAYER. THE RESULT IS A LOW K DIELECTRIC DUAL DAMA-SCENE STRUCTURE.FIG.2N

5. 发明专利

SG144905A1 REMOVAL OF PROCESS RESIDUES ON THE BACKSIDE OF A SUBSTRATE 未知
公开(公告)号：SG144905A1
公开(公告)日：2008-08-28
申请号：SG2008010985
申请日：2008-02-11
申请人： APPLIED MATERIALS INC
发明人： DELGADINO GERARDO A , LAHIRI INDRAJIT , SU TEH-TIEN , SHIEH SY-YUAN BRIAN , SINHA ASHOK
摘要： REMOVAL OF PROCESS RESIDUES ON THE BACKSIDE OF A SUBSTRATE A substrate is processed in a process chamber comprising a substrate support having a receiving surface for receiving a substrate so that a front surface of the substrate is exposed within the chamber. An energized process gas is used to process the front surface of the substrate. A peripheral edge of the backside surface of the substrate is cleaned by raising the substrate above the receiving surface of the substrate support to a raised position, and exposing the backside surface of the substrate to an energized cleaning gas.

6. 发明专利

SG143239A1 TWO STEP ETCHING OF A BOTTOM ANTI-REFLECTIVE COATING LAYER IN DUAL DAMASCENE APPLICATION 未知
公开(公告)号：SG143239A1
公开(公告)日：2008-06-27
申请号：SG2007184435
申请日：2007-12-07
申请人： APPLIED MATERIALS INC
发明人： HUANG ZHILIN , LI SIYI , DELGADINO GERARDO A
摘要： TWO STEP ETCHING OF A BOTTOM ANTI-REFLECTIVE COATING LAYER IN DUAL DAMASCENE APPLICATION Methods for removing a BARC layer from a feature are provided in the present invention. In one embodiment, the method includes providing a substrate having a feature filled with a BARC layer in an etching chamber, supplying a first gas mixture comprising NH[err] gas into the chamber to etch a first portion of the BARC layer filling in the feature, and supplying a second gas mixture comprising O[err] gas into the etching chamber to etch the remaining portion of the BARC layer disposed in the feature.

7. 发明专利

SG122943A1 Dielectric etch method with high source and low bombardment plasma providing high etch rates 未知
公开(公告)号：SG122943A1
公开(公告)日：2006-06-29
申请号：SG200507767
申请日：2005-12-02
申请人： APPLIED MATERIALS INC
发明人： DELGADINO GERARDO A , HSIEH CHAN-LIN , YE YAN , SHIM HYUNJONG
摘要： In at least some embodiments, the present invention is a plasma etching method which includes applying a gas mixture comprising CF 4 , N 2 and Ar and forming a high density and low bombardment energy plasma. The high density and low bombardment energy plasma is formed by using high source and low bias power settings. The gas mixture can further include H 2 , NH 3 , a hydrofluorocarbon gas and/or a fluorocarbon gas. The hydrofluorocarbon gas can include CH 2 F 2 , CH 3 F; and/or CHF 3 . The fluorocarbon gas can include C 4 F 8 , C 4 F 6 and/or C 5 F 8 .

8. 发明申请

WO2007109464A3 METHODS FOR ETCHING A BOTTOM ANTI-REFLECTIVE COATING LAYER IN DUAL DAMASCENE APPLICATION 审中-公开
标题翻译：用于蚀刻双层DAMASCENE应用中底层抗反射涂层的方法
公开(公告)号：WO2007109464A3
公开(公告)日：2007-12-27
申请号：PCT/US2007063941
申请日：2007-03-14
申请人： APPLIED MATERIALS INC , XIAO YING , DELGADINO GERARDO A , SCHNEIDER KARSTEN
发明人： XIAO YING , DELGADINO GERARDO A , SCHNEIDER KARSTEN
IPC分类号： C03C25/68 , H01L21/461
CPC分类号： H01L21/76808 , H01L21/31138
摘要： Methods for two steps etching a BARC layer in a dual damascene structure are provided. In one embodiment, the method includes providing a substrate having vias filled with a BARC layer disposed on the substrate in an etch reactor, supplying a first gas mixture into the reactor to etch a first portion of the BARC layer filling in the vias, and supplying a second gas mixture comprising NH 3 gas into the reactor to etch a second portion of the BARC layer disposed in the vias.
摘要翻译：提供了在双镶嵌结构中蚀刻BARC层的两个步骤的方法。在一个实施例中，该方法包括在蚀刻反应器中提供具有填充有设置在衬底上的BARC层的通孔的衬底，将第一气体混合物供应到反应器中以蚀刻填充在通孔中的BARC层的第一部分，包含NH 3气体的第二气体混合物进入反应器以蚀刻设置在通孔中的BARC层的第二部分。

9. 发明申请

WO2007111893A3 PLASMA ETCH AND PHOTORESIST STRIP PROCESS WITH INTERVENING CHAMBER DE-FLUORINATION AND WAFER DE-FLUORINATION STEPS 审中-公开
标题翻译：等离子体蚀刻和光栅条纹工艺，具有干燥室去荧光和脱水脱氟步骤
公开(公告)号：WO2007111893A3
公开(公告)日：2009-01-08
申请号：PCT/US2007006955
申请日：2007-03-19
申请人： APPLIED MATERIALS INC
发明人： ZHOU YIFENG , DELGADINO GERARDO A , HSIEH CHANG-LIN
IPC分类号： B08B3/12 , B08B6/00 , B08B7/00 , B08B7/02
CPC分类号： H01L21/31138 , H01L21/02049
摘要： A plasm etch process includes a plasma etch step performed with a photoresist mask on a workpiece using a polymerizing etch process gas that produces in the plasma polymerizing species which accumulate as a protective polymer layer on the surface of said photoresist mask during the etch step, the process including the following steps performed in the same chamber after the etch step and prior to removing the photoresist mask: (a) removing residue of the type including polymer material from chamber surfaces including a ceiling of said chamber, by coupling RF plasma source power into the chamber while coupling substantially no RF plasma bias power into the chamber, and introducing a hydrogen-containing gas into the chamber, until said residue is removed from the chamber surfaces; (b) removing the protective polymer layer from the surface of the photoresist mask, by coupling RF plasma bias power into the chamber while coupling substantially no RF plasma source power into the chamber, and introducing into the chamber a process gas comprising oxygen and carbon monoxide, until the polymer layer is removed from the surface of the photoresist mask.
摘要翻译：等离子体蚀刻工艺包括使用在蚀刻步骤期间在等离子体聚合物质中产生的聚合蚀刻工艺在光致抗蚀剂掩模的表面上积聚作为保护性聚合物层的工件上的光致抗蚀剂掩模执行的等离子体蚀刻步骤，该方法包括在蚀刻步骤之后并且在除去光致抗蚀剂掩模之前在相同的室中执行的以下步骤：（a）通过将RF等离子体源功率耦合到其中，从包括所述室的天花板的室表面去除包括聚合物材料的类型的残余物该室在基本上不将RF等离子体偏压功率耦合到室中，并且将含氢气体引入室中，直到从室表面除去所述残余物; （b）通过将RF等离子体偏压功率耦合到腔室中，同时将基本上没有RF等离子体源功率耦合到腔室中，从而保护聚合物层从光致抗蚀剂掩模的表面上除去，并且将包含氧和一氧化碳的工艺气体直到聚合物层从光致抗蚀剂掩模的表面去除。

10. 发明公开

EP1999784A4 PLASMA ETCH AND PHOTORESIST STRIP PROCESS WITH INTERVENING CHAMBER DE-FLUORINATION AND WAFER DE-FLUORINATION STEPS 审中-公开
标题翻译：等离子体装置和光致反应萃取工艺随着进入室的光照和晶片的喷射步骤
公开(公告)号：EP1999784A4
公开(公告)日：2010-05-19
申请号：EP07753572
申请日：2007-03-19
申请人： APPLIED MATERIALS INC
发明人： ZHOU YIFENG , DELGADINO GERARDO A , HSIEH CHANG-LIN
IPC分类号： B08B3/12 , B08B6/00 , B08B7/00 , B08B7/02 , H01L21/02
CPC分类号： H01L21/31138 , H01L21/02049

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