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1. 发明申请

WO2009089248A2 APPARATUS AND METHOD OF ALIGNING AND POSITIONING A COLD SUBSTRATE ON A HOT SURFACE 审中-公开
标题翻译：在热表面上排列和定位冷衬底的装置和方法
公开(公告)号：WO2009089248A2
公开(公告)日：2009-07-16
申请号：PCT/US2009/030275
申请日：2009-01-07
申请人： APPLIED MATERIALS, INC. , KOELMEL, Blake , MAYUR, Abhilash, J. , MA, Kai , LERNER, Alexander N.
发明人： KOELMEL, Blake , MAYUR, Abhilash, J. , MA, Kai , LERNER, Alexander N.
IPC分类号： H01L21/68 , H01L21/32 , H01L21/20 , H01L21/30
CPC分类号： H01L21/67248 , C23C16/4586 , H01L21/68742
摘要： Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein generally may also provide an inexpensive and simple way of accurately positioning a substrate on a substrate support that is positioned in a semiconductor processing chamber. Substrate processing chambers that can benefit from the various embodiments described herein include, but are not limited to RTP, CVD, PVD, ALD, plasma etching, and/or laser annealing chambers.
摘要翻译：本发明的实施例设想用于支撑和定位基底的方法，设备和系统，该基底处于与初始或进入的基底温度不同的温度的表面上。本发明的实施例还可以包括一种控制位于处理室中的衬底和衬底支撑件之间的热传递的方法。这里描述的设备和方法通常还可以提供将衬底精确定位在位于半导体处理室中的衬底支撑件上的便宜和简单的方式。可受益于本文所述的各种实施例的衬底处理室包括但不限于RTP，CVD，PVD，ALD，等离子体蚀刻和/或激光退火室。

2. 发明授权

EP1676300B1 METHOD FOR ANNEALING A SUBSTRATE COMPRISING AN ABSORBER LAYER 有权
标题翻译：与吸收层基板的热处理工艺
公开(公告)号：EP1676300B1
公开(公告)日：2014-10-01
申请号：EP04793905.3
申请日：2004-10-01
申请人： Applied Materials, Inc.
发明人： AUTRYVE, Luc, Van , BENCHER , Chris, D. , JENNINGS, Dean , LIANG, Haifan , MAYUR, Abhilash, J. , YAM, Mark , YEH, Wendy, H. , BROUGH, Richard, A.
IPC分类号： H01L21/268 , H01L21/265
CPC分类号： H01L21/26513 , H01L21/268
摘要： A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then exposing the substrate to electromagnetic radiation have one or more wavelengths between about 600 nm and about 1000 nm under conditions sufficient to heat the layer to a temperature of at least about 300° C. is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs the electromagnetic radiation and anneals a top surface layer of the substrate. In one aspect, the substrate is exposed to the electromagnetic radiation in a laser annealing process.

3. 发明公开

EP1676300A1 ABSORBER LAYER FOR DYNAMIC SURFACE ANNEALING PROCESSING 有权
标题翻译：与吸收层基板的热处理工艺
公开(公告)号：EP1676300A1
公开(公告)日：2006-07-05
申请号：EP04793905.3
申请日：2004-10-01
申请人： APPLIED MATERIALS, INC.
发明人： AUTRYVE, Luc, Van , BENCHER , Chris, D. , JENNINGS, Dean , LIANG, Haifan , MAYUR, Abhilash, J. , YAM, Mark , YEH, Wendy, H. , BROUGH, Richard, A.
IPC分类号： H01L21/268 , H01L21/265
CPC分类号： H01L21/26513 , H01L21/268
摘要： A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then exposing the substrate to electromagnetic radiation have one or more wavelengths between about 600 nm and about 1000 nm under conditions sufficient to heat the layer to a temperature of at least about 300° C. is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs the electromagnetic radiation and anneals a top surface layer of the substrate. In one aspect, the substrate is exposed to the electromagnetic radiation in a laser annealing process.

4. 发明申请

WO2009155117A2 METHOD AND APPARATUS FOR DETECTING THE SUBSTRATE TEMPERATURE IN A LASER ANNEAL SYSTEM 审中-公开
标题翻译：用于检测激光神经系统中底物温度的方法和装置
公开(公告)号：WO2009155117A2
公开(公告)日：2009-12-23
申请号：PCT/US2009/045699
申请日：2009-05-29
申请人： APPLIED MATERIALS, INC. , KOELMEL, Blake , MAYUR, Abhilash, J.
发明人： KOELMEL, Blake , MAYUR, Abhilash, J.
IPC分类号： H01L21/66 , H01L21/324
CPC分类号： H01L21/67248 , G01J5/048 , H01L21/67253 , H01L21/68742
摘要： Embodiments of the invention provide a method and an apparatus for detecting the temperature of a substrate surface. In one embodiment, a method for measuring the temperature is provided which includes exposing the surface of the substrate to a laser beam radiating from a laser source, radiating emitted light from a portion of the surface of the substrate, through the shadow ring, and towards a thermal sensor, and determining the temperature of the portion of the surface of the substrate from the emitted light. The substrate may be disposed on a substrate support within a treatment region and a shadow ring may be disposed between the laser source and the surface of the substrate. The shadow ring may be selectively opaque to the laser beam and transparent to the emitted light.
摘要翻译：本发明的实施例提供了一种用于检测衬底表面的温度的方法和装置。在一个实施例中，提供了一种用于测量温度的方法，其包括将衬底的表面暴露于从激光源辐射的激光束，从衬底表面的一部分通过阴影环辐射发射的光，并朝向热传感器，并且从所发射的光确定衬底的表面部分的温度。衬底可以设置在处理区域内的衬底支撑件上，并且阴影环可以设置在激光源和衬底的表面之间。阴影环可以选择性地对激光束不透明并且对于发射的光是透明的。

5. 发明申请

WO2007019500A1 COPPER CONDUCTOR ANNEALING PROCESS EMPLOYING HIGH SPEED OPTICAL ANNEALING WITH A LOW TEMPERATURE-DEPOSITED OPTICAL ABSORBER LAYER 审中-公开
标题翻译：铜导体退火工艺采用高温光学退火与低温沉积光吸收层
公开(公告)号：WO2007019500A1
公开(公告)日：2007-02-15
申请号：PCT/US2006/030888
申请日：2006-08-07
申请人： APPLIED MATERIALS, INC.
发明人： RAMASWAMY, Kartik , HANAWA, Hiroji , GALLO, Biagio , COLLINS, Kenneth, S. , MA, Kai , PARIHAR, Vijay , JENNINGS, Dean , MAYUR, Abhilash, J. , AL-BAYATI, Amir , NGUYEN, Andrew
IPC分类号： H01L21/768 , B23K26/08 , B23K26/06
CPC分类号： B23K26/0738 , B23K26/0608 , B23K26/0876 , B23K26/361 , B23K26/40 , B23K2203/172 , B23K2203/50 , H01L21/76843 , H01L21/76864 , H01L21/76873 , H01L21/76877 , H01L21/76886
摘要： A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light. The method of Claim 1 further comprising, prior to the annealing step, depositing an amorphous carbon optical absorber layer on the main conductor layer. The step of depositing an amorphous carbon optical absorber layer includes introducing a carbon-containing process gas into a reactor chamber containing the substrate in a process zone of the reactor, applying RF source power to an external reentrant conduit of the reactor to generate a reentrant toroidal RF plasma current passing through the process zone and applying a bias voltage to the substrate.
摘要翻译：在半导体衬底上形成薄膜结构中的导体的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高方面的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层比例开口，包括垂直侧壁，在第一阻挡层上沉积包含阻挡金属的金属阻挡层，在金属阻挡层上沉积主导体种子种子层并沉积主导体层。该方法还包括通过以下步骤退火主导体层：（a）将来自连续波激光阵列的光引导至至少部分穿过薄膜结构延伸的光线，以及（b）相对于薄的平面薄膜结构在横向于光线的方向上。 2.根据权利要求1所述的方法，还包括在所述退火步骤之前，在所述主导体层上沉积无定形碳光吸收层。沉积非晶碳光吸收层的步骤包括将含碳处理气体引入反应器的反应器室中，该反应器室在反应器的处理区中，将RF源功率施加到反应器的外部折入导管以产生可重入环形 RF等离子体电流通过处理区域并向衬底施加偏置电压。

6. 发明申请

WO2005083762A1 GATE ELECTRODE DOPANT ACTIVATION METHOD FOR SEMICONDUCTOR MANUFACTURING 审中-公开
标题翻译：用于半导体制造的门极电极激活方法
公开(公告)号：WO2005083762A1
公开(公告)日：2005-09-09
申请号：PCT/US2005/004318
申请日：2005-02-10
申请人： APPLIED MATERIALS, INC. , MA, Yi , AHMED, Khaled, Z. , CUNNINGHAM, Kevin, L. , MCINTOSH, Robert, C. , MAYUR, Abhilash, J. , LIANG, Haifan , YAM, Mark , LEUNG, Toi, Yue, Becky , OLSEN, Christopher , WANG, Shulin , FOAD, Majeed , MINER, Gary, Eugene
发明人： MA, Yi , AHMED, Khaled, Z. , CUNNINGHAM, Kevin, L. , MCINTOSH, Robert, C. , MAYUR, Abhilash, J. , LIANG, Haifan , YAM, Mark , LEUNG, Toi, Yue, Becky , OLSEN, Christopher , WANG, Shulin , FOAD, Majeed , MINER, Gary, Eugene
IPC分类号： H01L21/28
CPC分类号： H01L21/268 , H01L21/28035 , H01L21/324
摘要： In one embodiment, the invention generally provides a method for annealing a doped layer deposited on a substrate. The method includes depositing a polycrystalline layer on a substrate surface such as a gate oxide layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer. The method further includes exposing the doped polycrystalline layer to a rapid thermal anneal to readily distribute the dopant throughout the polycrystalline layer. Subsequently, the method includes exposing the doped polycrystalline layer to a laser anneal to activate the dopant in an upper portion of the polycrystalline layer. The laser anneal incorporates the dopant, atoms into the crystalline lattice of the polycrystalline material.
摘要翻译：在一个实施例中，本发明通常提供一种用于退火沉积在衬底上的掺杂层的方法。该方法包括在诸如栅极氧化物层的衬底表面上沉积多晶层，并用掺杂剂注入多晶层以形成掺杂的多晶层。该方法还包括将掺杂多晶层暴露于快速热退火以便容易地将掺杂剂分布在整个多晶层中。随后，该方法包括将掺杂多晶层暴露于激光退火以激活多晶层上部的掺杂剂。激光退火将掺杂剂原子结合到多晶材料的晶格中。

7. 发明申请

WO2000009976A1 TUNING A SUBSTRATE TEMPERATURE MEASUREMENT SYSTEM 审中-公开
标题翻译：调节基板温度测量系统
公开(公告)号：WO2000009976A1
公开(公告)日：2000-02-24
申请号：PCT/US1999/018537
申请日：1999-08-13
申请人： APPLIED MATERIALS, INC.
发明人： ADERHOLD, Wolfgang , MAYUR, Abhilash, J. , KNOOT, Peter, A.
IPC分类号： G01J5/00
CPC分类号： G01J5/0003 , G01J5/0007 , G01J2005/0048
摘要： A technique and system for tuning temperature sensor readings in a thermal processing chamber includes determining an actual temperature profile for a substrate based on measurements of the substrate. A simulated temperature profile for the substrate is calculated using a respective interim temperature correction value for one or more temperature sensors associated with the chamber. A Gaussian-like distribution for thermal contributions from multiple radiation sources in the chamber can be used to simulate the temperature profile. The simulated temperature profile and the actual temperature profile are combined to form an estimated temperature profile. A final value for each respective temperature correction value is determined using an optimization algorithm which results in the estimated temperature profile being substantially uniform across the surface of the substrate. Each final temperature correction value is used as an offset to temperature measurements obtained from the corresponding temperature sensors.
摘要翻译：用于调节热处理室中的温度传感器读数的技术和系统包括基于衬底的测量来确定衬底的实际温度分布。使用与腔室相关联的一个或多个温度传感器的相应临时温度校正值来计算衬底的模拟温度曲线。可以使用室内来自多个辐射源的热贡献的高斯状分布来模拟温度分布。将模拟温度曲线和实际温度曲线组合以形成估计的温度曲线。使用优化算法来确定每个相应温度校正值的最终值，该优化算法导致估计的温度分布在衬底的表面上基本均匀。每个最终温度校正值用作从相应的温度传感器获得的温度测量的偏移。

8. 发明申请

WO2010033389A1 MANAGING THERMAL BUDGET IN ANNEALING OF SUBSTRATES 审中-公开
标题翻译：管理衬底退火中的热预算
公开(公告)号：WO2010033389A1
公开(公告)日：2010-03-25
申请号：PCT/US2009/055838
申请日：2009-09-03
申请人： APPLIED MATERIALS, INC. , MOFFATT, Stephen , MAYUR, Abhilash, J. , RAMAMURTHY, Sundar , RANISH, Joseph , HUNTER, Aaron
发明人： MOFFATT, Stephen , MAYUR, Abhilash, J. , RAMAMURTHY, Sundar , RANISH, Joseph , HUNTER, Aaron
IPC分类号： H01L21/324
CPC分类号： H01L21/324 , H01L21/67115
摘要： A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.
摘要翻译：提供了一种处理基板的方法和装置。衬底位于热处理室中的支撑件上。电磁辐射被引向衬底以退火衬底的一部分。其他电磁辐射被引向衬底以预热衬底的一部分。预热减少了预热区域和退火区域之间的边界处的热应力。根据具体实施方案的需要，预期任何数量的退火和预热区域具有变化的形状和温度曲线。可以使用任何方便的电磁辐射源，例如激光器，加热灯，白光灯或闪光灯。

9. 发明申请

WO2009020510A1 INTEGRATED CIRCUIT FABRICATION PROCESS WITH MINIMAL POST-LASER ANNEALING DOPANT DEACTIVATION 审中-公开
标题翻译：集成电路制造工艺，具有最小的后激光退火猝死
公开(公告)号：WO2009020510A1
公开(公告)日：2009-02-12
申请号：PCT/US2008/008705
申请日：2008-07-16
申请人： APPLIED MATERIALS, INC.
发明人： MA, Yi , KRAUS, Philip, Allan , OLSEN, Christopher, Sean , AHMED, Khaled, Z. , MAYUR, Abhilash, J.
IPC分类号： B23K26/02 , H01L21/02
CPC分类号： B23K26/0066 , B23K26/0006 , B23K26/0608 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/0665 , B23K26/0738 , B23K26/0876 , B23K2201/42 , B23K2203/56 , H01L21/268 , H01L21/28518 , H01L29/665
摘要： Post-laser annealing dopant deactivation is minimized by performing certain low temperature process steps prior to laser annealing.
摘要翻译：通过在激光退火之前执行某些低温工艺步骤，使激光后退火掺杂剂失活最小化。

10. 发明申请

WO2007019467A3 SEMICONDUCTOR SUBSTRATE PROCESS USING A LOW TEMPERATURE-DEPOSITED CARBON-CONTAINING HARD MASK 审中-公开
公开(公告)号：WO2007019467A3
公开(公告)日：2007-02-15
申请号：PCT/US2006/030792
申请日：2006-08-07
申请人： APPLIED MATERIALS, INC.
发明人： RAMASWAMY, Kartik , HANAWA, Hiroji , GALLO, Biagio , COLLINS, Kenneth, S. , MA, Kai , PARIHAR, Vijay , JENNINGS, Dean , MAYUR, Abhilash, J. , AL-BAYATI, Amir , NGUYEN, Andrew
IPC分类号： H01L21/027 , H01L21/033 , H01L21/3213 , C23C16/26 , C23C16/507 , H01L21/311
摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.

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