专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2003088316A3 ELECTROPOLISHING AND ELECTROPLATING METHODS 审中-公开
公开(公告)号：WO2003088316A3
公开(公告)日：2003-10-23
申请号：PCT/US2003/011417
申请日：2003-04-11
申请人： ACM RESEARCH, INC. , WANG, Hui , WANG, Jian , YIH, Peihaur , WU, Huiquan
发明人： WANG, Hui , WANG, Jian , YIH, Peihaur , WU, Huiquan
IPC分类号： C25D5/00
摘要： In one aspect of the present invention, an exemplary method is provided for electroplating a conductive film on a wafer. The method includes electroplating a metal film on a semiconductor structure having recessed regions and non-recessed region within a first current density range before the metal layer is planar above recessed regions of a first density, and electroplating within a second current density range after the metal layer is planar above the recessed regions. The second current density range is greater than the first current density range. In one example, the method further includes electroplating in the second current density range until the metal layer is planar above recessed regions of a second density, the second density being greater than the first density, and electroplating within a third current density range thereafter.

2. 发明申请

WO2003088316A2 ELECTROPOLISHING AND ELECTROPLATING METHODS 审中-公开
标题翻译：电镀和电镀方法
公开(公告)号：WO2003088316A2
公开(公告)日：2003-10-23
申请号：PCT/US2003/011417
申请日：2003-04-11
申请人： ACM RESEARCH, INC. , WANG, Hui , WANG, Jian , YIH, Peihaur , WU, Huiquan
发明人： WANG, Hui , WANG, Jian , YIH, Peihaur , WU, Huiquan
IPC分类号： H01L
CPC分类号： C25D3/02 , C25D3/38 , C25D5/18 , C25D7/123 , H01L21/2885 , H01L21/76834 , H01L21/7684 , H01L21/76877
摘要： In one aspect of the present invention, an exemplary method is provided for electroplating a conductive film on a wafer. The method includes electroplating a metal film on a semiconductor structure having recessed regions and non-recessed region within a first current density range before the metal layer is planar above recessed regions of a first density, and electroplating within a second current density range after the metal layer is planar above the recessed regions. The second current density range is greater than the first current density range. In one example, the method further includes electroplating in the second current density range until the metal layer is planar above recessed regions of a second density, the second density being greater than the first density, and electroplating within a third current density range thereafter.
摘要翻译：在本发明的一个方面中，提供了用于在晶片上电镀导电膜的示例性方法。该方法包括在金属层在第一密度的凹陷区域之上为平面之前，在第一电流密度范围内具有凹陷区域和非凹陷区域的半导体结构上电镀金属膜，并且在金属之后的第二电流密度范围内电镀层在凹陷区域上方是平坦的。第二电流密度范围大于第一电流密度范围。在一个示例中，该方法还包括在第二电流密度范围内进行电镀，直到金属层在第二密度的凹陷区域上方是平面的，第二密度大于第一密度，并且之后在第三电流密度范围内进行电镀。 / p>

3. 发明申请

WO2006110864A2 METHOD FOR IMPROVING SURFACE ROUGHNESS DURING ELECTRO-POLISHING 审中-公开
标题翻译：在电抛光过程中改善表面粗糙度的方法
公开(公告)号：WO2006110864A2
公开(公告)日：2006-10-19
申请号：PCT/US2006/013804
申请日：2006-04-12
申请人： ACM RESEARCH, INC. , WANG, Hui , HO, Fredrick , WANG, Jian
发明人： WANG, Hui , HO, Fredrick , WANG, Jian
IPC分类号： C25D3/02
CPC分类号： C25F7/00 , B23H5/08 , B24B37/04 , B24B57/02
摘要： A surface is electropolished using a stream of electrolyte. A nozzle is used to apply the stream of electrolyte to the surface. The nozzle has an insulator wall and a partial electrode. The insulator wall and the partial electrode form a flow channel for the stream of electrolyte. The stream of electrolyte contacts the insulator wall and the partial electrode when the stream of electrolyte flows through the flow channel formed by the insulator wall and the partial electrode. The insulator wall is less electrically conductive than the partial electrode. A power supply is connected to the partial electrode. The power supply is configured to apply a charge to the stream of electrolyte through the partial electrode when the stream of electrolyte flows through the flow channel formed by the insulator wall and the partial electrode.
摘要翻译：使用电解质流对表面进行电抛光。使用喷嘴将电解液流施加到表面。喷嘴具有绝缘体壁和部分电极。绝缘体壁和部分电极形成用于电解质流的流动通道。当电解质流过由绝缘体壁和部分电极形成的流动通道时，电解质流与绝缘体壁和部分电极接触。绝缘体壁比部分电极导电性差。电源连接到部分电极。电源构造成当电解质流流过由绝缘体壁和部分电极形成的流动通道时，通过部分电极向电解质流施加电荷。

4. 发明申请

WO2005082057A2 CONTROLLING REMOVAL RATE UNIFORMITY OF AN ELECTROPOLISHING PROCESS IN INTEGRATED CIRCUIT FABRICATION 审中-公开
标题翻译：一体化电路制造中电解过程的去除速率均匀性的控制
公开(公告)号：WO2005082057A2
公开(公告)日：2005-09-09
申请号：PCT/US2005/006142
申请日：2005-02-23
申请人： ACM RESEARCH, INC. , WANG, Hui , AFNAN, Muhammed , WANG, Jian , GUTMAN, Felix , HO, Frederick , CHOKSHI, Himanshu, J.
发明人： WANG, Hui , AFNAN, Muhammed , WANG, Jian , GUTMAN, Felix , HO, Frederick , CHOKSHI, Himanshu, J.
CPC分类号： B23H5/08 , B24B37/04 , C25F3/02 , C25F5/00 , C25F7/00 , H01L21/32115
摘要： A metal layer formed on a wafer, the wafer having a center portion and an edge portion, is electropolished by aligning a nozzle and the wafer to position the nozzle adjacent to the center portion of the wafer. The wafer is rotated. As the wafer is rotated, a stream of electrolyte is applied from the nozzle onto a portion of the metal layer adjacent to the center portion of the wafer to begin to electropolish the portion of the metal layer with a triangular polishing profile to initially expose an underlying layer underneath the metal layer at a point.
摘要翻译：在晶片上形成的金属层（具有中心部分和边缘部分的晶片）通过对准喷嘴和晶片以将喷嘴定位成与晶片的中心部分相邻来进行电抛光。晶圆旋转。当晶片旋转时，电解质流从喷嘴施加到与晶片的中心部分相邻的金属层的一部分上，以开始以三角抛光轮廓对金属层的部分进行电解抛光，以最初暴露下面的在一点上金属层下方的层。

5. 发明申请

WO2005055283A2 MONITORING AN ELECTROPOLISHING PROCESS IN INTEGRATED CIRCUIT FABRICATION 审中-公开
标题翻译：监控整合电路制造中的电镀工艺
公开(公告)号：WO2005055283A2
公开(公告)日：2005-06-16
申请号：PCT/US2004/039748
申请日：2004-11-26
申请人： ACM RESEARCH, INC. , WANG, Hui , YIP, Henry , WANG, Jian , YU, Chaw-Chi
发明人： WANG, Hui , YIP, Henry , WANG, Jian , YU, Chaw-Chi
IPC分类号： H01L
CPC分类号： C25F3/16 , H01L22/14 , H01L22/26
摘要： An electropolishing process of a metal layer formed on a wafer used in integrated circuit fabrication includes rotating the wafer. As the wafer is rotated, a stream of electrolyte is applied through a nozzle to the metal layer at a first radial location on the wafer. The electropolishing process is monitored by measuring electrical resistance at the first radial location. The electrical resistance measured at the first radial location is compared to a first preset electrical resistance associated with the first radial location. An electropolishing charge applied at the first radial location is controlled based on the comparison of the electrical resistance measured at the first radial location to the first preset electrical resistance associated with the first radial location. After applying the stream of electrolyte at the first radial location, the stream of electrolyte is applied at a second radial location. Electrical resistance at the second radial location is measured. The electrical resistance measured at the second radial location is compared to a second preset electrical resistance, which is different than the first preset electrical resistance, associated with the second radial location. The electropolishing charge applied at the second radial location is controlled based on the comparison of the electrical resistance measured at the second radial location to the second preset electrical resistance associated with the second radial location.
摘要翻译：在用于集成电路制造的晶片上形成的金属层的电抛光工艺包括旋转晶片。当晶片旋转时，电晶体流通过喷嘴在晶片上的第一径向位置处施加到金属层。通过测量第一径向位置处的电阻来监测电抛光过程。将在第一径向位置处测量的电阻与与第一径向位置相关联的第一预设电阻进行比较。基于在第一径向位置处测量的电阻与与第一径向位置相关联的第一预设电阻的比较来控制施加在第一径向位置处的电抛光电荷。在第一径向位置施加电解质流之后，在第二径向位置施加电解质流。测量第二径向位置处的电阻。将在第二径向位置处测量的电阻与与第二径向位置相关联的第一预设电阻不同的第二预设电阻进行比较。基于在第二径向位置处测量的电阻与与第二径向位置相关联的第二预设电阻的比较来控制施加在第二径向位置处的电抛光电荷。

6. 发明申请

WO2007130452A1 REMOVING BARNIER LAYER USING AN ELECTRON POLISHING PROCESS 审中-公开
标题翻译：使用电子抛光工艺去除棒状层
公开(公告)号：WO2007130452A1
公开(公告)日：2007-11-15
申请号：PCT/US2007/010628
申请日：2007-05-02
申请人： ACM RESEARCH, INC. , WANG, Hul , WANG, Jian
发明人： WANG, Hul , WANG, Jian
IPC分类号： H01L21/302
CPC分类号： H01L21/02074 , H01L21/32125 , H01L21/76807 , H01L21/76819 , H01L21/76829 , H01L21/76835 , H01L21/7684
摘要： To electro-polish a metal layer on a semiconductor wafer, a first dielectric layer is formed on a semiconductor wafer The first dielectric layer is resistant to being etched by hydrogen fluoride acid. A second dielectric layer is formed above the first dielectric layer on the semiconductor wafer. The second dielectric layer is susceptible to being etched by hydrogen fluoride acid The second dielectric layer is formed with a recessed area and a non-recessed area The recessed area extends into the first dielectric layer. A barrier layer is formed to cover the recessed area and the non-recessed area The metal layer is formed to fill the recessed area and cover the non-recessed area The metal layer and the barrier layer are electro-polished to expose the non-recessed area using an electrolyte containing hydrogen fluoride acid
摘要翻译：为了对半导体晶片上的金属层进行电抛光，在半导体晶片上形成第一介电层。第一介电层耐受氟化氢酸蚀刻。在半导体晶片上的第一电介质层的上方形成第二电介质层。第二电介质层容易被氟化氢酸蚀刻。第二电介质层形成有凹陷区域和非凹陷区域。凹陷区域延伸到第一介电层中。形成阻挡层以覆盖凹陷区域和非凹陷区域金属层形成以填充凹陷区域并覆盖非凹陷区域金属层和阻挡层被电抛光以暴露非凹入区域使用含氟化氢酸的电解质

7. 发明申请

WO2013040751A1 METHOD FOR FORMING AIR GAP INTERCONNECT STRUCTURE 审中-公开
标题翻译：形成气隙互连结构的方法
公开(公告)号：WO2013040751A1
公开(公告)日：2013-03-28
申请号：PCT/CN2011/079859
申请日：2011-09-20
申请人： ACM RESEARCH (SHANGHAI) INC. , WANG, Hui , WANG, Jian , JIN, Yinuo , JIA, Zhaowei
发明人： WANG, Hui , WANG, Jian , JIN, Yinuo , JIA, Zhaowei
IPC分类号： H01L21/302 , H01L21/764
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02131 , H01L21/02271 , H01L21/02274 , H01L21/32115 , H01L21/32135 , H01L21/7684
摘要： Embodiments of the present invention provide a method for forming air gap interconnect structure. A first step of the method is to form conductive structures on a substrate, the conductive structures are separated by sacrificial material. A scale of the conductive structures is lower than 65nm and the conductive structures are polished by both Chemical Mechanical Polishing (CMP) and Stress-Free ElectroPolishing (SFP). A second step of this method is to remove the sacrificial material to form recesses between the conductive structures. And a third step of this method is to non-conformally deposit dielectric material over the conductive structure and in the recesses, so as to form air gaps within the dielectric material in the recesses. No hard mask is deposited during the formation of the conductive structures.
摘要翻译：本发明的实施例提供一种形成气隙互连结构的方法。该方法的第一步是在衬底上形成导电结构，导电结构由牺牲材料分离。导电结构的尺度低于65nm，并通过化学机械抛光（CMP）和无压电抛光（SFP）进行抛光。该方法的第二步是去除牺牲材料以在导电结构之间形成凹陷。并且该方法的第三步是在导电结构和凹槽中不均匀地沉积电介质材料，以在凹陷中的电介质材料内形成气隙。在形成导电结构期间不会沉积硬掩模。

8. 发明申请

WO2010066081A1 METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS 审中-公开
标题翻译：清洗半导体波形的方法和装置
公开(公告)号：WO2010066081A1
公开(公告)日：2010-06-17
申请号：PCT/CN2008/073471
申请日：2008-12-12
申请人： ACM RESEARCH (SHANGHAI) INC. , WANG, Jian , NUCH, Sunny Voha , XIE, Liangzhi , WU, Junping , JIA, Zhaowei , HUANG, Yunwen , GAO, Zhifeng , WANG, Hui
发明人： WANG, Jian , NUCH, Sunny Voha , XIE, Liangzhi , WU, Junping , JIA, Zhaowei , HUANG, Yunwen , GAO, Zhifeng , WANG, Hui
IPC分类号： H01L21/00 , H01L21/02 , B08B3/12 , B06B3/00
CPC分类号： H01L21/67051 , B08B3/08 , B08B3/12 , B08B3/123 , H01L21/02063 , H01L21/67023 , H01L21/6708
摘要： A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semi conductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the clea ning process. The gap can be increased or reduced by 0.5λ /N for each rotation of the chuck, where λ is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5 λn during the cleaning process, where λ is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.
摘要翻译：一种使用超声波设备清洗半导体衬底的方法，包括：通过使用卡盘夹持半导体衬底，将超声波器件邻近半导体衬底定位，在半导体衬底上注入化学液体，将半导体衬底与半导体衬底之间的间隙超声波超声波装置，在清洁过程中，对于卡盘的每次旋转，改变半导体衬底和超/超声波装置之间的间隙。间隙可以增加或减少0.5？ / N为卡盘的每次旋转，其中？是超/兆声波的波长，N是2和1000之间的整数。在清洁过程中间隙在0.5？n的范围内变化，其中？是超/大声波的波长，n是从1开始的整数。

9. 发明申请

WO2013173998A1 METHOD AND APPARATUS FOR PULSE ELECTROCHEMICAL POLISHING 审中-公开
标题翻译：脉冲电化学抛光方法与装置
公开(公告)号：WO2013173998A1
公开(公告)日：2013-11-28
申请号：PCT/CN2012/075990
申请日：2012-05-24
申请人： ACM RESEARCH (SHANGHAI) INC. , WANG, Jian , JIN, Yinuo , WANG, Jun , WANG, Hui
发明人： WANG, Jian , JIN, Yinuo , WANG, Jun , WANG, Hui
IPC分类号： H01L21/321 , B23H3/02 , B24B57/02 , C25F3/16
CPC分类号： H01L21/32115 , C25F3/16 , C25F3/30 , C25F7/00 , H01L22/12 , H01L22/20
摘要： A method and apparatus for pulse electrochemical polishing a wafer are disclosed. The method comprises steps of: establishing a duty cycle table showing all points on the wafer, a removal thickness corresponding to every point and a duty cycle corresponding to the removal thickness; driving a wafer chuck (5) holding and positioning the wafer (8) to move at a preset speed so that a special point on the wafer (8) is right above a nozzle (6) ejecting charged electrolyte (7) onto the wafer (8); looking up the duty cycle table and obtaining the removal thickness and the duty cycle corresponding to the special point; and applying a preset pulse power source to the wafer (8) and the nozzle (6) and the actual polishing power source for polishing the special point being equal to the duty cycle multiplying by the preset power source.
摘要翻译：公开了用于脉冲电化学抛光晶片的方法和装置。该方法包括以下步骤：建立表示晶片上所有点的占空比表，对应于每个点的去除厚度和对应于去除厚度的占空比; 驱动晶片卡盘（5），其保持并定位晶片（8）以预定速度移动，使得晶片（8）上的特殊点位于喷射带电电解质（7）到晶片上的喷嘴（6）的正上方 8）; 查找占空比表，获得与特殊点对应的去除厚度和占空比; 以及将预设的脉冲电源施加到晶片（8）和喷嘴（6）上的实际抛光功率源和用于抛光专用点的实际抛光功率等于乘以预设电源的占空比。

10. 发明申请

WO2013143116A1 FLOW CONTROL SYSTEM AND METHOD THEREOF 审中-公开
标题翻译：流量控制系统及其方法
公开(公告)号：WO2013143116A1
公开(公告)日：2013-10-03
申请号：PCT/CN2012/073302
申请日：2012-03-30
申请人： ACM RESEARCH (SHANGHAI) INC. , WANG, Jian , ZHAO, Yu , XIE, Liangzhi , ZHANG, Xiaoyan , JIA, Shena , WANG, Hui
发明人： WANG, Jian , ZHAO, Yu , XIE, Liangzhi , ZHANG, Xiaoyan , JIA, Shena , WANG, Hui
IPC分类号： G05D7/06
CPC分类号： G05D7/0664
摘要： A flow control system and method thereof are disclosed. The flow control system includes a control valve for liquid flowing through, a pressure sensor measuring a pressure of the liquid flowing through the control valve and outputting a measuring signal, a controller receiving the measuring signal from the pressure sensor and outputting a corresponding electric current signal, an I/P converter receiving the electric current signal from the controller and outputting compressed air with corresponding pressure to the control valve to regulate the pressure of the liquid in the control valve, a flow switch measuring a flow rate of the liquid flowing into a chamber, and a needle valve regulating the flow rate to a target flow rate. The control valve, the pressure sensor, the I/P converter and the controller constitute a PID closed loop control system to provide a precise and stable liquid supply.
摘要翻译：公开了一种流量控制系统及其方法。流量控制系统包括用于液体流过的控制阀，测量流过控制阀的液体的压力并输出测量信号的压力传感器，控制器从压力传感器接收测量信号并输出相应的电流信号，I / P转换器，其接收来自控制器的电流信号，并将相应压力的压缩空气输出到控制阀，以调节控制阀中的液体的压力;流量开关，其测量流入以及将流量调节到目标流量的针阀。控制阀，压力传感器，I / P转换器和控制器构成PID闭环控制系统，提供精确稳定的液体供应。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式