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1. 发明申请

WO2013040751A1 METHOD FOR FORMING AIR GAP INTERCONNECT STRUCTURE 审中-公开
标题翻译：形成气隙互连结构的方法
公开(公告)号：WO2013040751A1
公开(公告)日：2013-03-28
申请号：PCT/CN2011/079859
申请日：2011-09-20
申请人： ACM RESEARCH (SHANGHAI) INC. , WANG, Hui , WANG, Jian , JIN, Yinuo , JIA, Zhaowei
发明人： WANG, Hui , WANG, Jian , JIN, Yinuo , JIA, Zhaowei
IPC分类号： H01L21/302 , H01L21/764
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02131 , H01L21/02271 , H01L21/02274 , H01L21/32115 , H01L21/32135 , H01L21/7684
摘要： Embodiments of the present invention provide a method for forming air gap interconnect structure. A first step of the method is to form conductive structures on a substrate, the conductive structures are separated by sacrificial material. A scale of the conductive structures is lower than 65nm and the conductive structures are polished by both Chemical Mechanical Polishing (CMP) and Stress-Free ElectroPolishing (SFP). A second step of this method is to remove the sacrificial material to form recesses between the conductive structures. And a third step of this method is to non-conformally deposit dielectric material over the conductive structure and in the recesses, so as to form air gaps within the dielectric material in the recesses. No hard mask is deposited during the formation of the conductive structures.
摘要翻译：本发明的实施例提供一种形成气隙互连结构的方法。该方法的第一步是在衬底上形成导电结构，导电结构由牺牲材料分离。导电结构的尺度低于65nm，并通过化学机械抛光（CMP）和无压电抛光（SFP）进行抛光。该方法的第二步是去除牺牲材料以在导电结构之间形成凹陷。并且该方法的第三步是在导电结构和凹槽中不均匀地沉积电介质材料，以在凹陷中的电介质材料内形成气隙。在形成导电结构期间不会沉积硬掩模。

2. 发明申请

WO2010111826A1 METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS 审中-公开
标题翻译：清洗半导体波形的方法和装置
公开(公告)号：WO2010111826A1
公开(公告)日：2010-10-07
申请号：PCT/CN2009/071088
申请日：2009-03-31
申请人： ACM RESEARCH (SHANGHAI) INC. , WANG, Jian , NUCH, Sunny Voha , XIE, Liangzhi , WU, Junping , JIA, Zhaowei , HUANG, Yunwen , GAO, Zhifeng , MA, Yue , WANG, Hui
发明人： WANG, Jian , NUCH, Sunny Voha , XIE, Liangzhi , WU, Junping , JIA, Zhaowei , HUANG, Yunwen , GAO, Zhifeng , MA, Yue , WANG, Hui
IPC分类号： H01L21/00 , B08B3/12
CPC分类号： H01L21/02068 , B08B3/12 , H01L21/02063 , H01L21/67051
摘要： A method for cleaning a semiconductor substrate (1010) using an ultra/mega sonic device (1003) is provided. The method comprises holding a semiconductor substrate (1010) by using a chuck (1014); positioning an ultra/mega sonic device (1003) adjacent to the semiconductor substrate (1010); injecting chemical liquid (1032) on the semiconductor substrate (1010) and into a gap between the semiconductor substrate (1010) and the ultra/mega sonic device (1003) by using at least one nozzle (1012); and changing the gap between the semiconductor substrate (1010) and the ultra/mega sonic device (1003) for each rotation of the chuck (1014) during the cleaning process by turning the semiconductor substrate (1010) or the ultra/mega sonic device (1003) clockwise or count clockwise. An apparatus for cleaning a semiconductor substrate (1010) using an ultra/mega sonic device (1003) is also provided.
摘要翻译：提供了一种使用超声波设备（1003）清洁半导体衬底（1010）的方法。该方法包括通过使用卡盘（1014）保持半导体衬底（1010）; 定位与半导体衬底（1010）相邻的超/超声波器件（1003）; 通过使用至少一个喷嘴（1012）将半导体衬底（1010）上的化学液体（1032）注入到半导体衬底（1010）和超声波声学器件（1003）之间的间隙中; 以及通过转动所述半导体衬底（1010）或所述超/超声波器件（1010），在所述清洁过程期间，通过所述卡盘（1014）的每次旋转来改变所述半导体衬底（1010）和所述超/超声波器件（1003） 1003）顺时针或顺时针方向计数。还提供了一种使用超声波超声波设备（1003）清洁半导体衬底（1010）的设备。

3. 发明申请

WO2013173999A1 LOADLOCK CHAMBER AND METHOD FOR TREATING SUBSTRATES USING THE SAME 审中-公开
标题翻译：用于处理基板的装载室和方法
公开(公告)号：WO2013173999A1
公开(公告)日：2013-11-28
申请号：PCT/CN2012/075992
申请日：2012-05-24
申请人： ACM RESEARCH (SHANGHAI) INC. , WANG, Jian , HE, Zenghua , FANG, Zhiyou , JIA, Zhaowei , WANG, Hui
发明人： WANG, Jian , HE, Zenghua , FANG, Zhiyou , JIA, Zhaowei , WANG, Hui
IPC分类号： H01L21/677 , H01L21/673 , H01L21/68
CPC分类号： H01L21/67109 , H01L21/67201
摘要： A load lock chamber (100) and methods for treating multiple substrates using the same are provided. The load lock chamber (100) includes a chamber housing (10), a chuck (20), a support frame (30) and at least one elevating mechanism (40). The chamber housing (10) has a first vacuum valve (11) and a second vacuum valve (12), via which the substrates are loaded in the chamber housing (10) or unloaded out of the chamber housing (10). The chuck (20) has a plate portion (21) for holding the substrates. The plate portion (21) is received in the chamber housing (10) and defines at least two notches (23). The support frame (30) received in the chamber housing (10) has at least two connecting portions (32). A stack of support platforms (33) protrudes from either of the connecting portions (32). Every support platform (33) has a placing portion (332) arranged in the notch (23) of the chuck (20). The placing portions (332) which are in the same plane are parallel with the plate portion (21) and capable of holding a piece of the substrates. The elevating mechanism (40) is used for raising or lowering the connecting portions (32) of the support frame (30).
摘要翻译：提供了一种负载锁定室（100）以及使用该负载锁定室处理多个基板的方法。负载锁定室（100）包括室室（10），卡盘（20），支撑框架（30）和至少一个升降机构（40）。腔室壳体（10）具有第一真空阀（11）和第二真空阀（12），基板通过该第一真空阀（11）和第二真空阀（12）装载到腔室壳体（10）中或从腔室壳体（10）中卸载。卡盘（20）具有用于保持基板的板部（21）。板部分（21）被容纳在腔室（10）中并限定至少两个切口（23）。容纳在腔室（10）中的支撑框架（30）具有至少两个连接部分（32）。一组支撑平台（33）从连接部分（32）中的任一个突出。每个支撑平台（33）具有布置在卡盘（20）的凹口（23）中的放置部分（332）。位于同一平面中的放置部分（332）平行于板部分（21）并且能够保持一片基片。升降机构（40）用于升降支撑框架（30）的连接部（32）。

4. 发明申请

WO2010020092A1 BARRIER LAYER REMOVAL METHOD AND APPARATUS 审中-公开
标题翻译： BARRIER层去除方法和装置
公开(公告)号：WO2010020092A1
公开(公告)日：2010-02-25
申请号：PCT/CN2008/072059
申请日：2008-08-20
申请人： ACM RESEARCH (SHANGHAI) INC. , WANG, Jian , JIA, Zhaowei , WU, Junping , XIE, Liangzhi , WANG, Hui
发明人： WANG, Jian , JIA, Zhaowei , WU, Junping , XIE, Liangzhi , WANG, Hui
IPC分类号： H01L21/302 , H01L21/306 , B44C1/22
CPC分类号： H01L21/67069 , H01L21/02074 , H01L21/32115 , H01L21/32135 , H01L21/67075
摘要： A method and an apparatus by integrating semiconductor manufacturing processes of stress free electrochemical copper polishing (SFP), removal of the tantalum oxide or titanium oxide formed during SFP process and XeF2 gas phase etching barrier layer Ta/TaN or Ti/TiN process are provided. Firstly, at least portion of plated copper film is polished by SFP. Secondly the barrier metal oxide film formed during SFP process is etched away by etchant. Finally, the barrier layer Ta/TaN or Ti/TiN is removed with XeF2 gas phase etching. The apparatus accordingly consists of three sub systems: stress free copper electropolishing system, barrier layer oxide film removal system and barrier layer Ta/TaN or Ti/TiN gas phase etching system.
摘要翻译：提供了一种通过集成无应力电化学铜抛光（SFP）的半导体制造工艺，去除在SFP工艺和XeF 2气相蚀刻阻挡层Ta / TaN或Ti / TiN工艺期间形成的氧化钽或氧化钛的方法和装置。首先，通过SFP抛光电镀铜膜的至少一部分。其次，在SFP工艺期间形成的阻挡金属氧化物膜被蚀刻剂蚀刻掉。最后，用XeF2气相蚀刻除去阻挡层Ta / TaN或Ti / TiN。因此该装置由三个子系统组成：无应力铜电解抛光系统，阻挡层氧化膜去除系统和阻挡层Ta / TaN或Ti / TiN气相蚀刻系统。

5. 发明申请

WO2010066081A1 METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS 审中-公开
标题翻译：清洗半导体波形的方法和装置
公开(公告)号：WO2010066081A1
公开(公告)日：2010-06-17
申请号：PCT/CN2008/073471
申请日：2008-12-12
申请人： ACM RESEARCH (SHANGHAI) INC. , WANG, Jian , NUCH, Sunny Voha , XIE, Liangzhi , WU, Junping , JIA, Zhaowei , HUANG, Yunwen , GAO, Zhifeng , WANG, Hui
发明人： WANG, Jian , NUCH, Sunny Voha , XIE, Liangzhi , WU, Junping , JIA, Zhaowei , HUANG, Yunwen , GAO, Zhifeng , WANG, Hui
IPC分类号： H01L21/00 , H01L21/02 , B08B3/12 , B06B3/00
CPC分类号： H01L21/67051 , B08B3/08 , B08B3/12 , B08B3/123 , H01L21/02063 , H01L21/67023 , H01L21/6708
摘要： A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semi conductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the clea ning process. The gap can be increased or reduced by 0.5λ /N for each rotation of the chuck, where λ is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5 λn during the cleaning process, where λ is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.
摘要翻译：一种使用超声波设备清洗半导体衬底的方法，包括：通过使用卡盘夹持半导体衬底，将超声波器件邻近半导体衬底定位，在半导体衬底上注入化学液体，将半导体衬底与半导体衬底之间的间隙超声波超声波装置，在清洁过程中，对于卡盘的每次旋转，改变半导体衬底和超/超声波装置之间的间隙。间隙可以增加或减少0.5？ / N为卡盘的每次旋转，其中？是超/兆声波的波长，N是2和1000之间的整数。在清洁过程中间隙在0.5？n的范围内变化，其中？是超/大声波的波长，n是从1开始的整数。

6. 发明申请

WO2013143079A1 VACUUM CHUCK FOR ELECTROPOLISHING AND/OR ELECTROPLATING 审中-公开
标题翻译：用于电沉积和/或电镀的真空泵
公开(公告)号：WO2013143079A1
公开(公告)日：2013-10-03
申请号：PCT/CN2012/073172
申请日：2012-03-28
申请人： ACM RESEARCH (SHANGHAI) INC. , WANG, Jian , JIN, Yinuo , SHAO, Yong , WANG, Hui
发明人： WANG, Jian , JIN, Yinuo , SHAO, Yong , WANG, Hui
IPC分类号： H01L21/683 , B25B11/00 , H01L21/67 , B25J15/06
CPC分类号： H01L21/6838 , B25B11/005
摘要： The present invention discloses a vacuum chuck for electropolishing and/or electroplating wafers, which includes a supporting assembly having a receiving groove and at least one first vacuum aperture defined in the receiving groove. A seal unit includes a seal ring bulging to form a vacuum trough. The seal ring is fixed in the receiving groove of the supporting assembly and has at least one second vacuum aperture communicating with the first vacuum aperture. A chuck connector fastened with the supporting assembly has at least one vacuum port and at least one vacuum orifice communicating with the vacuum port. At least one vacuum hose connects the first vacuum aperture, the second vacuum aperture with the vacuum orifice and the vacuum port of the chuck connector for evacuating the air of the vacuum trough to hold and position a wafer on the seal ring and the supporting assembly. An electrode connecting with a power supply, a subsidiary metal ring and an insulating ring disposed between the electrode and the subsidiary metal ring are fixed on the supporting assembly and encircle the receiving groove. The diameter of the subsidiary metal ring is smaller than the diameter of the electrode and the subsidiary metal ring is close to the wafer held on the vacuum chuck.
摘要翻译：本发明公开了一种用于电抛光和/或电镀晶片的真空卡盘，其包括具有接收槽和支撑槽中的至少一个第一真空孔的支撑组件。密封单元包括凸起形成真空槽的密封环。密封环固定在支撑组件的接收槽中，并且具有与第一真空孔连通的至少一个第二真空孔。紧固有支撑组件的卡盘连接器具有至少一个真空口和至少一个与真空口连通的真空孔。至少一个真空软管将第一真空孔，第二真空孔与真空孔连接，并且夹持连接器的真空端口用于抽空真空槽的空气，以将晶片保持并定位在密封环和支撑组件上。与电源，辅助金属环和设置在电极和辅助金属环之间的绝缘环连接的电极固定在支撑组件上并且环绕接收槽。辅助金属环的直径小于电极的直径，并且辅助金属环接近保持在真空卡盘上的晶片。

7. 发明申请

WO2013143115A1 NOZZLE FOR STRESS-FREE POLISHING METAL LAYERS ON SEMICONDUCTOR WAFERS 审中-公开
标题翻译：用于无应力抛光金属层的喷嘴在半导体波导上
公开(公告)号：WO2013143115A1
公开(公告)日：2013-10-03
申请号：PCT/CN2012/073300
申请日：2012-03-30
申请人： ACM RESEARCH (SHANGHAI) INC. , WANG, Jian , JIN, Yinuo , WANG, Hui
发明人： WANG, Jian , JIN, Yinuo , WANG, Hui
IPC分类号： H01L21/304
CPC分类号： B24C5/04 , C25F3/30 , C25F7/00
摘要： A nozzle for charging and ejecting electrolyte in SFP process is disclosed. The nozzle includes an insulated foundation defining a through-hole, a conductive body as negative electrode connecting with a power source for charging the electrolyte and an insulated nozzle head. The conductive body has a fixing portion located on the insulated foundation. The fixing portion protrudes to form a receiving portion inserted into the through-hole and defining a receiving hole passing therethrough and the fixing portion. The insulated nozzle head has a cover stably assembled with the insulated foundation above the conductive body and a tube extending through the cover and defining a main fluid path through where the charged electrolyte is ejected for polishing. The tube is inserted in the receiving hole and stretches out of the receiving hole of the conductive body. An auxiliary fluid path is formed between an inner circumferential surface of the receiving portion and an outer circumferential surface of the tube.
摘要翻译：公开了一种用于在SFP工艺中充电和喷射电解质的喷嘴。喷嘴包括限定通孔的绝缘基座，与用于对电解质充电的电源连接的负极的导电体和绝缘喷嘴头。导电体具有位于绝缘基底上的固定部分。固定部分突出以形成插入到通孔中的接收部分，并且限定穿过其中的接收孔和固定部分。绝缘喷嘴头具有与导电体上方的绝缘基底稳定地组装的盖，以及延伸穿过盖并且限定主要流体路径的管，通过其中喷射带电电解质的抛光。该管插入接收孔中，并延伸出导电体的接收孔。在容纳部的内周面和管的外周面之间形成辅助流路。

8. 发明申请

WO2013143081A1 VACUUM CHUCK 审中-公开
标题翻译：真空罐
公开(公告)号：WO2013143081A1
公开(公告)日：2013-10-03
申请号：PCT/CN2012/073175
申请日：2012-03-28
申请人： ACM RESEARCH (SHANGHAI) INC. , WANG, Jian , JIN, Yinuo , SHAO, Yong , WANG, Hui
发明人： WANG, Jian , JIN, Yinuo , SHAO, Yong , WANG, Hui
IPC分类号： H01L21/683 , B25B11/00 , H01L21/67 , B25J15/06
CPC分类号： H01L21/6838 , B23B31/307 , B25B11/005 , H01L2221/683 , Y10T279/11
摘要： V ACUUM CHUCK ABSTRACT OF THE DISCLOSURE A vacuum chuck is disclosed for holding and positioning wafers more stably and securely. The vacuum chuck includes a supporting assembly having a receiving groove and at least one first vacuum aperture defined in the receiving groove. A seal unit includes a seal ring bulging to form a vacuum trough. The seal ring is fixed in the receiving groove of the supporting assembly and has at least one second vacuum aperture communicating with the first vacuum aperture. A chuck connector fastened with the supporting assembly has at least one vacuum port and at least one vacuum orifice communicating with the vacuum port. At least one vacuum hose connects the first vacuum aperture, the second vacuum aperture with the vacuum orifice and the vacuum port of the chuck connector for evacuating the air of the vacuum trough to hold and position the wafer on the seal ring and the supporting assembly.
摘要翻译： V ACUUM CHUCK摘要公开了一种更稳定和可靠地保持和定位晶片的真空卡盘。真空吸盘包括支撑组件，其具有容纳凹槽和限定在容纳凹槽中的至少一个第一真空孔。密封单元包括凸起形成真空槽的密封环。密封环固定在支撑组件的接收槽中，并且具有与第一真空孔连通的至少一个第二真空孔。紧固有支撑组件的卡盘连接器具有至少一个真空口和至少一个与真空口连通的真空孔。至少一个真空软管将第一真空孔，第二真空孔与真空孔连接，并且夹持连接器的真空端口用于抽空真空槽的空气，以将晶片保持并定位在密封环和支撑组件上。

9. 发明申请

WO2013173998A1 METHOD AND APPARATUS FOR PULSE ELECTROCHEMICAL POLISHING 审中-公开
标题翻译：脉冲电化学抛光方法与装置
公开(公告)号：WO2013173998A1
公开(公告)日：2013-11-28
申请号：PCT/CN2012/075990
申请日：2012-05-24
申请人： ACM RESEARCH (SHANGHAI) INC. , WANG, Jian , JIN, Yinuo , WANG, Jun , WANG, Hui
发明人： WANG, Jian , JIN, Yinuo , WANG, Jun , WANG, Hui
IPC分类号： H01L21/321 , B23H3/02 , B24B57/02 , C25F3/16
CPC分类号： H01L21/32115 , C25F3/16 , C25F3/30 , C25F7/00 , H01L22/12 , H01L22/20
摘要： A method and apparatus for pulse electrochemical polishing a wafer are disclosed. The method comprises steps of: establishing a duty cycle table showing all points on the wafer, a removal thickness corresponding to every point and a duty cycle corresponding to the removal thickness; driving a wafer chuck (5) holding and positioning the wafer (8) to move at a preset speed so that a special point on the wafer (8) is right above a nozzle (6) ejecting charged electrolyte (7) onto the wafer (8); looking up the duty cycle table and obtaining the removal thickness and the duty cycle corresponding to the special point; and applying a preset pulse power source to the wafer (8) and the nozzle (6) and the actual polishing power source for polishing the special point being equal to the duty cycle multiplying by the preset power source.
摘要翻译：公开了用于脉冲电化学抛光晶片的方法和装置。该方法包括以下步骤：建立表示晶片上所有点的占空比表，对应于每个点的去除厚度和对应于去除厚度的占空比; 驱动晶片卡盘（5），其保持并定位晶片（8）以预定速度移动，使得晶片（8）上的特殊点位于喷射带电电解质（7）到晶片上的喷嘴（6）的正上方 8）; 查找占空比表，获得与特殊点对应的去除厚度和占空比; 以及将预设的脉冲电源施加到晶片（8）和喷嘴（6）上的实际抛光功率源和用于抛光专用点的实际抛光功率等于乘以预设电源的占空比。

10. 发明申请

WO2013163791A1 APPARATUS AND METHOD FOR DETECTING POSITION OF WAFER 审中-公开
标题翻译：检测波形位置的装置和方法
公开(公告)号：WO2013163791A1
公开(公告)日：2013-11-07
申请号：PCT/CN2012/074966
申请日：2012-05-02
申请人： ACM RESEARCH (SHANGHAI) INC. , WANG, Jian , ZHAO, Yu , HUANG, Yufeng , CHEN, Fufa , WANG, Hui
发明人： WANG, Jian , ZHAO, Yu , HUANG, Yufeng , CHEN, Fufa , WANG, Hui
IPC分类号： H01L21/68
CPC分类号： H01L21/67259 , H01L21/681
摘要： An apparatus and method for detecting position of a wafer on a chuck are disclosed. The apparatus includes a camera (6) and an image processor (100) which includes a transforming unit (101), a comparing unit (103) and a determining unit (104). The method includes the following steps: taking an image of edge of the wafer and send image data to the image processor (S23); transforming the image data into image pixels and comparing the image pixels with reference pixels (S25'), and determining whether the wafer is in position on the chuck (S26).
摘要翻译：公开了一种用于检测卡盘上的晶片位置的装置和方法。该装置包括摄像机（6）和包括变换单元（101），比较单元（103）和确定单元（104）的图像处理器（100）。该方法包括以下步骤：拍摄晶片边缘的图像并将图像数据发送到图像处理器（S23）; 将图像数据变换为图像像素，并将图像像素与参考像素（S25'）进行比较，以及确定晶片是否处于卡盘上的位置（S26）。

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