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1. 发明申请

WO2013143116A1 FLOW CONTROL SYSTEM AND METHOD THEREOF 审中-公开
标题翻译：流量控制系统及其方法
公开(公告)号：WO2013143116A1
公开(公告)日：2013-10-03
申请号：PCT/CN2012/073302
申请日：2012-03-30
申请人： ACM RESEARCH (SHANGHAI) INC. , WANG, Jian , ZHAO, Yu , XIE, Liangzhi , ZHANG, Xiaoyan , JIA, Shena , WANG, Hui
发明人： WANG, Jian , ZHAO, Yu , XIE, Liangzhi , ZHANG, Xiaoyan , JIA, Shena , WANG, Hui
IPC分类号： G05D7/06
CPC分类号： G05D7/0664
摘要： A flow control system and method thereof are disclosed. The flow control system includes a control valve for liquid flowing through, a pressure sensor measuring a pressure of the liquid flowing through the control valve and outputting a measuring signal, a controller receiving the measuring signal from the pressure sensor and outputting a corresponding electric current signal, an I/P converter receiving the electric current signal from the controller and outputting compressed air with corresponding pressure to the control valve to regulate the pressure of the liquid in the control valve, a flow switch measuring a flow rate of the liquid flowing into a chamber, and a needle valve regulating the flow rate to a target flow rate. The control valve, the pressure sensor, the I/P converter and the controller constitute a PID closed loop control system to provide a precise and stable liquid supply.
摘要翻译：公开了一种流量控制系统及其方法。流量控制系统包括用于液体流过的控制阀，测量流过控制阀的液体的压力并输出测量信号的压力传感器，控制器从压力传感器接收测量信号并输出相应的电流信号，I / P转换器，其接收来自控制器的电流信号，并将相应压力的压缩空气输出到控制阀，以调节控制阀中的液体的压力;流量开关，其测量流入以及将流量调节到目标流量的针阀。控制阀，压力传感器，I / P转换器和控制器构成PID闭环控制系统，提供精确稳定的液体供应。

2. 发明申请

WO2016204424A1 HYBRID SUBSTRATE PROCESSING SYSTEM FOR DRY AND WET PROCESS AND SUBSTRATE PROCESSING METHOD THEREOF 审中-公开
标题翻译：用于干燥和湿处理的混合基板处理系统及其基板处理方法
公开(公告)号：WO2016204424A1
公开(公告)日：2016-12-22
申请号：PCT/KR2016/005602
申请日：2016-05-27
申请人： GEN CO., LTD. , ACM RESEARCH (SHANGHAI) INC.
发明人： CHOI, Dai Kyu , WANG, Hui , WANG, Xi , ZHANG, Xiaoyan , JIA, Shena
IPC分类号： H01L21/02 , H01L21/677 , H01L21/027
CPC分类号： H01L21/67778 , H01L21/6732 , H01L21/67745 , H01L21/67766
摘要： The substrate can be selectively transferred by a vacuum or edge grip method according to the process characteristics, using a single substrate transfer robot equipped in the front end module. Additionally, after the process, the substrate can be loaded using the buffer chamber, for the cooling process and transfer of the substrate.
摘要翻译：使用装在前端模块中的单个基板传送机器人，可以根据工艺特性通过真空或边缘夹持方法选择性地转移基板。此外，在该过程之后，可以使用缓冲室来加载基底，用于冷却过程和基底的转移。

3. 发明申请

WO2018176308A1 EXHAUST APPARATUS 审中-公开
公开(公告)号：WO2018176308A1
公开(公告)日：2018-10-04
申请号：PCT/CN2017/078736
申请日：2017-03-30
申请人： ACM RESEARCH (SHANGHAI) INC.
发明人： LEI, Qiang , JIA, Shena , WANG, Hui
IPC分类号： F16K11/085
摘要： An exhaust apparatus for several kinds of gases separation exhaust is provided. The exhaust apparatus (100) includes an outer pipe (102), an inner pipe (103) and an actuator (104). The outer pipe (102) has a pipe body (1021). A side wall of the pipe body (1021) defines several exhaust ports (1022). The inner pipe (103) is accommodated in the pipe body (1021) of the outer pipe (102). One end of the inner pipe (103) is open and the other end of the inner pipe (103) is sealed. A side wall of the inner pipe (103) defines a through-hole (1033) or a plurality of through-holes (1033). The actuator (104) is configured to drive the inner pipe (103) to rotate in the pipe body (1021) of the outer pipe (102) to make the through-hole (1033) of the inner pipe (103) facing one of the exhaust ports (1022) of the outer pipe (102) for discharging one kind of gas while other exhaust ports (1022) of the outer pipe (102) being blocked by the side wall of the inner pipe (103).

4. 发明申请

WO2014082212A1 METHOD AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFER 审中-公开
标题翻译：清洗半导体波形的方法和装置
公开(公告)号：WO2014082212A1
公开(公告)日：2014-06-05
申请号：PCT/CN2012/085403
申请日：2012-11-28
申请人： ACM RESEARCH (SHANGHAI) INC.
发明人： WANG, Hui , CHEN, Fuping , XIE, Liangzhi , JIA, Shena , WANG, Xi , ZHANG, Xiaoyan
IPC分类号： H01L21/00
CPC分类号： H01L21/67051 , H01L21/67057 , H01L21/67781
摘要： A method and apparatus(100) for cleaning semiconductor wafer are provided, combining batch cleaning and single wafer cleaning together. The method includes the following steps: tacking at least two wafers from a cassette in a load port(110) and putting said wafers into a first tank(137) filled with chemical solution; after said wafers have been processed in the first tank(137), taking said wafers out of the first tank(137) and keeping said wafers in wet status; putting said wafers into a second tank(138) filled with liquid; after said wafers have been processed in the second tank(138), taking said wafers out of the second tank(138) and keeping said wafers in wet status; putting one of said wafers on a chuck inside a single wafer cleaning module(150); rotating the chuck while applying chemical solution on said wafer; applying deionized water on said wafer; drying said wafer; taking said wafer out of the single wafer cleaning module(150) and then putting said wafer back to the cassette in the load port(110).
摘要翻译：提供了一种用于清洁半导体晶片的方法和装置（100），其将批量清洗和单个晶片清洁结合在一起。该方法包括以下步骤：从装载端口（110）中的盒子中取出至少两个晶片，并将所述晶片放入填充有化学溶液的第一罐（137）中; 在所述第一罐（137）中处理所述晶片之后，将所述晶片从所述第一罐（137）中取出并保持所述晶片处于湿状态; 将所述晶片放入填充有液体的第二罐（138）中; 在所述第二罐（138）中处理所述晶片之后，将所述晶片从所述第二罐（138）中取出并将所述晶片保持在湿状态; 将一个所述晶片放置在单个晶片清洁模块（150）内的卡盘上; 在所述晶片上施加化学溶液时旋转卡盘; 在所述晶片上施加去离子水; 干燥所述晶片; 将所述晶片从所述单晶片清洁模块（150）中取出，然后将所述晶片放回所述装载端口（110）中的所述盒。

5. 发明申请

WO2017096553A1 METHOD AND APPARATUS FOR CLEANING SUBSTRATES USING HIGH TEMPERATURE CHEMICALS AND ULTRASONIC DEVICE 审中-公开
标题翻译：使用高温化学品和超声波装置清洁基板的方法和设备
公开(公告)号：WO2017096553A1
公开(公告)日：2017-06-15
申请号：PCT/CN2015/096788
申请日：2015-12-09
申请人： ACM RESEARCH (SHANGHAI) INC.
发明人： CHEN, Fuping , WANG, Hui , WANG, Xi , JIA, Shena , WANG, Danying , JIANG, Chaowei , DAI, Yingwei , WANG, Jian
IPC分类号： B01D19/00 , F04B23/00 , F04B15/04 , B05C5/00 , B05C11/10 , B05D1/40
CPC分类号： B01D19/00 , B01D19/0036 , B08B3/12 , F04B15/04 , F04B23/00 , H01L21/02052 , H01L21/67017 , H01L21/67051 , H01L21/67253
摘要： The present invention provides a high temperature chemical solution supply system for cleaning substrates. The system includes a solution tank, a buffer tank, a first pump and a second pump. The solution tank contains high temperature chemical solution. The buffer tank has a tank body, a vent line and a needle valve. The tank body contains the high temperature chemical solution. An end of the vent line connects to the tank body, and the other end of the vent line connects to the solution tank. The needle valve is mounted on the vent line, wherein the needle valve is adjusted to reach a flow rate to vent gas bubbles inside of the high temperature chemical solution out of the buffer tank through the vent line. An inlet of the first pump connects to the solution tank, and an outlet of the first pump connects to the buffer tank. An inlet of the second pump connects to the buffer tank, and an outlet of the second pump connects to a cleaning chamber in which a substrate is cleaned. The present invention also provides an apparatus including the high temperature chemical solution supply system and an ultra or mega sonic device for cleaning the substrate. The present invention also provides methods for cleaning the substrates.
摘要翻译：本发明提供了用于清洁基材的高温化学溶液供应系统。该系统包括溶液罐，缓冲罐，第一泵和第二泵。溶液罐含有高温化学溶液。缓冲罐有一个罐体，一个排气管和一个针阀。罐体内含有高温化学溶液。排气管的一端连接到罐体，排气管的另一端连接到溶液罐。针阀安装在排气管线上，其中针阀被调节为达到流速以将高温化学溶液内部的气泡通过排气管线排出缓冲罐。第一泵的入口连接到溶液罐，并且第一泵的出口连接到缓冲罐。第二泵的入口连接到缓冲罐，并且第二泵的出口连接到清洁衬底的清洁室。本发明还提供了一种包括高温化学溶液供应系统和用于清洁基材的超声波或超声波装置的设备。本发明还提供了清洁基材的方法。

6. 发明申请

WO2016127635A1 A FALL-PROOF APPARATUS FOR CLEANING SEMICONDUCTOR DEVICES AND A CHAMBER WITH THE APPARATUS 审中-公开
标题翻译：用于清洁半导体器件和室外设备的防腐设备
公开(公告)号：WO2016127635A1
公开(公告)日：2016-08-18
申请号：PCT/CN2015/089096
申请日：2015-09-08
申请人： ACM RESEARCH (SHANGHAI) INC.
发明人： CHU, Zhenming , WANG, Xi , WANG, Hui , JIA, Shena , WU, Jun , CHEN, Fuping , LI, Xuejun
IPC分类号： H01L21/302 , B08B3/12
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/024 , B08B3/08 , B08B3/12 , B08B5/02 , B08B9/00 , B08B13/00 , B08B2203/0288 , G01B5/14 , G01B7/14 , G01B11/14 , G08B21/182 , H01L21/687
摘要： A fall-proof apparatus for cleaning semiconductor devices is provided. The fall-proof apparatus comprises: a nozzle (102) connecting with a carrier(101); a megasonic/ultrasonic device (105) fixing on the carrier (101); and a sensor (104) detecting the distance between the megasonic/ultrasonic device (105) and the carrier (101) to determine whether the megasonic/ultrasonic device (105) is loose and going to fall. The megasonic/ultrasonic device works with the nozzle during a cleaning process. A chamber with the fall-proof apparatus is also provided.
摘要翻译：提供了用于清洁半导体器件的防坠落装置。防坠装置包括：与承载件连接的喷嘴（102）; 固定在所述载体（101）上的兆声波/超声波装置（105）; 以及检测所述兆声波/超声波装置（105）与所述载体（101）之间的距离的传感器（104），以确定所述兆声波/超声波装置（105）是否松动并将下降。超声波/超声波装置在清洁过程中与喷嘴配合使用。还提供具有防坠落装置的室。

7. 发明申请

WO2022126403A1 SUBSTRATE SUPPORTING APPARATUS 审中-公开
公开(公告)号：WO2022126403A1
公开(公告)日：2022-06-23
申请号：PCT/CN2020/136658
申请日：2020-12-16
申请人： ACM RESEARCH (SHANGHAI) , INC.
发明人： WANG, Hui , LIU, Feng , TAO, Xiaofeng , JIA, Shena , CHEN, Fuping , HU, Haibo , LIU, Yang
IPC分类号： H01L21/687 , H01L21/67
摘要： A substrate supporting apparatus having a spin chuck (100) and a plurality of locating pins (130) is provided. The spin chuck (100) configured to support and rotate a substrate (001) has a supporting surface (110). The locating pins (130) are disposed at the periphery of the supporting surface (110) for limiting the substrate (001) horizontal displacement. The supporting surface (110) defines a first annular region (150). The first annular region (150) is divided into a plurality of pin regions (151) and a plurality of non-pin regions (152). The pin regions (151) and the non-pin regions (152) are arranged alternatively in a circumferential direction of the first annular region (150). Each of the pin regions (151) is corresponding to one locating pin (130). A plurality of Bernoulli holes (160) are set in the first annular region (150) and is configured as an uneven structure in the first annular region (150) so as to supply stronger gas flow in the pin regions (151) than in the non-pin regions (152).

8. 发明申请

WO2018161205A1 APPARATUS FOR CLEANING SEMICONDUCTOR SUBSTRATES 审中-公开
公开(公告)号：WO2018161205A1
公开(公告)日：2018-09-13
申请号：PCT/CN2017/075716
申请日：2017-03-06
申请人： ACM RESEARCH (SHANGHAI) INC.
发明人： WANG, Hui , TAO, Xiaofeng , CHEN, Fuping , JIA, Shena , WANG, Xi , ZHANG, Xiaoyan , LI, Xuejun
IPC分类号： H01L21/76 , B08B3/02
摘要： An apparatus for cleaning semiconductor substrates includes a chamber (101), a chuck (102), a liquid collector (104), an enclosing wall (105), at least one driving mechanism (106), at least one internal dispenser (111), and at least one external dispenser (118). The chamber (101) has a top wall (1011), a side wall (1012) and a bottom wall (1013). The chuck (102) is disposed in the chamber (101) for holding a semiconductor substrate (103). The liquid collector (104) surrounds the chuck (102). The enclosing wall (105) surrounds the liquid collector (104). The at least one driving mechanism (106) drives the enclosing wall (105) to move up and down, wherein when the at least one driving mechanism (106) drives the enclosing wall (105) to move up, a seal room (110) is formed by the liquid collector (104), the enclosing wall (105), the top wall (1011) of the chamber (101), and the bottom wall (1013) of the chamber (101). The at least one internal dispenser (111) is disposed inside the seal room (110). The at least one external dispenser (118) is disposed outside the seal room (110). The at least one external dispenser (118) gets in and out the seal room (110) after the enclosing wall (105) is driven to move down.

9. 发明申请

WO2021212330A1 METHOD AND APPARATUS FOR REMOVING PARTICLES OR PHOTORESIST ON SUBSTRATES 审中-公开
公开(公告)号：WO2021212330A1
公开(公告)日：2021-10-28
申请号：PCT/CN2020/085948
申请日：2020-04-21
申请人： ACM RESEARCH (SHANGHAI) , INC.
发明人： ZHANG, Xiaoyan , WANG, Wenjun , CHEN, Fuping , WANG, Jun , JIA, Shena , WANG, Deyun , WANG, Hui , XIA, Guangyu , WANG, He
IPC分类号： H01L21/00 , H01L21/67
摘要： Methods and an apparatus for removing particles or photoresist on substrates. In an embodiment, a method comprises the following steps: transferring one or more substrates into a DIO 3 solution accommodated in a DIO 3 bath; after the one or more substrates are processed in the DIO 3 bath, taking the one or more substrates out from the DIO 3 bath and transferring the one or more substrates into a SPM solution accommodated in a SPM bath; after the one or more substrates are processed in the SPM bath, taking the one or more substrates out from the SPM bath and rinsing the one or more substrates; and transferring the one or more substrates to one or more single chambers to perform single substrate cleaning and drying process. The method combines DIO 3 and SPM in one cleaning sequence, which can remove particles or photoresist, especially remove photoresist treated by medium dose or high dose of ion implantation.

10. 发明公开

EP4397784A1 THIN FILM DEPOSITION DEVICE, THIN FILM DEPOSITION METHOD, AND THIN FILM DEPOSITION APPARATUS 审中-实审
公开(公告)号：EP4397784A1
公开(公告)日：2024-07-10
申请号：EP22863574.4
申请日：2022-09-01
申请人： ACM Research (Shanghai) Inc. , ACM Research Korea Co., Ltd. , Cleanchip Technologies Limited
发明人： WANG, Hui , ZHANG, Shan , WANG, Jun , ZHANG, Xiaoyan , JIA, Shena , SHEN, Hui , WANG, Jian , KIM, Tom , LEE, Jacob , BAEK, William , KIM, Zeus , KIM, Yy
IPC分类号： C23C16/458 , C23C16/455
CPC分类号： C23C16/458 , C23C16/505 , C23C16/455 , C23C16/52 , C23C16/44 , C23C16/54
摘要： Disclosed in the invention is a thin film deposition a device, comprising: a processing chamber; a gas supply assembly, which is arranged on the top wall of the processing chamber; a heating tray, which is arranged below the gas supply assembly for bearing and heating the substrate; a radio frequency source; and a rotating mechanism configured to control the rotation of the substrate, or the rotation of the heating tray, or control the synchronous rotation of the substrate and the heating tray, wherein the rotation shaft for rotation is perpendicular to and passing through the substrate. The radio frequency source is kept in an on state during rotation. According to the method, non-uniformity of the thickness of the thin film deposited on the substrate is compensated, and the uniformity and stability of deposition of the thin film of the PECVD layer stack structure are achieved, and the phenomenon that etching through holes of the thin film deposited on the substrate deviate from the vertical direction in the subsequent etching process is avoided. Therefore, the stability of the performance of a semiconductor device is further guaranteed.

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