专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08931433B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08931433B2
公开(公告)日：2015-01-13
申请号：US12742604
申请日：2008-11-12
申请人： Yuichi Setsuhara , Akinori Ebe , Eiji Ino , Shinichiro Ishihara , Hajime Ashida , Akira Watanabe
发明人： Yuichi Setsuhara , Akinori Ebe , Eiji Ino , Shinichiro Ishihara , Hajime Ashida , Akira Watanabe
IPC分类号： C23C16/505 , C23C16/503 , C03C17/22 , C23C16/24 , C23C16/509 , H01J37/32
CPC分类号： C23C16/503 , C03C17/22 , C03C2217/28 , C03C2218/153 , C23C16/24 , C23C16/509 , H01J37/321 , H01J37/3211 , H01J37/32715
摘要： The present invention aims at providing a plasma processing apparatus for performing a plasma processing on a planar substrate body to be processed, the apparatus being capable of generating the plasma with good uniformity and efficiently using the plasma, and having a high productivity. That is, the plasma processing apparatus according to the present invention includes: a vacuum chamber; one or plural antenna supporters (plasma generator supporters) projecting into the internal space of the vacuum chamber; radio-frequency antennas (plasma generators) attached to each antenna supporter; and a pair of substrate body holders provided across the antenna supporter in the vacuum chamber, for holding a planar substrate body to be processed.
摘要翻译：本发明的目的在于提供一种等离子体处理装置，用于对待处理的平面基板主体进行等离子体处理，该装置能够产生均匀性均匀且有效地使用等离子体的等离子体，并且具有高生产率。也就是说，根据本发明的等离子体处理装置包括：真空室; 一个或多个天线支撑器（等离子体发生器支撑器）突出到真空室的内部空间中; 连接到每个天线支架的射频天线（等离子体发生器）; 以及设置在真空室中的天线支撑体两侧的一对基板主体保持件，用于保持待处理的平面基板主体。

2. 发明申请

US20100263797A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20100263797A1
公开(公告)日：2010-10-21
申请号：US12742604
申请日：2008-11-12
申请人： Yuichi Setsuhara , Akinori Ebe , Eiji Ino , Shinichiro Ishihara , Hajime Ashida , Akira Watanabe
发明人： Yuichi Setsuhara , Akinori Ebe , Eiji Ino , Shinichiro Ishihara , Hajime Ashida , Akira Watanabe
IPC分类号： H01L31/18 , C23C16/00 , C23C16/505 , C23F1/08
CPC分类号： C23C16/503 , C03C17/22 , C03C2217/28 , C03C2218/153 , C23C16/24 , C23C16/509 , H01J37/321 , H01J37/3211 , H01J37/32715
摘要： The present invention aims at providing a plasma processing apparatus for performing a plasma processing on a planar substrate body to be processed, the apparatus being capable of generating the plasma with good uniformity and efficiently using the plasma, and having a high productivity. That is, the plasma processing apparatus according to the present invention includes: a vacuum chamber; one or plural antenna supporters (plasma generator supporters) projecting into the internal space of the vacuum chamber; radio-frequency antennas (plasma generators) attached to each antenna supporter; and a pair of substrate body holders provided across the antenna supporter in the vacuum chamber, for holding a planar substrate body to be processed.
摘要翻译：本发明的目的在于提供一种等离子体处理装置，用于对待处理的平面基板主体进行等离子体处理，该装置能够产生均匀性均匀且有效地使用等离子体的等离子体，并且具有高生产率。也就是说，根据本发明的等离子体处理装置包括：真空室; 一个或多个天线支撑器（等离子体发生器支撑器）突出到真空室的内部空间中; 连接到每个天线支架的射频天线（等离子体发生器）; 以及设置在真空室中的天线支撑体两侧的一对基板主体保持件，用于保持待处理的平面基板主体。

3. 发明申请

US20100272550A1 SUBSTRATE HOLDING MECHANISM, SUBSTRATE DELIVERING/RECEIVING MECHANISM, AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板保持机构，基板传送/接收机构以及基板处理装置
公开(公告)号：US20100272550A1
公开(公告)日：2010-10-28
申请号：US12681018
申请日：2008-09-29
申请人： Shinichiro Ishihara , Hajime Ashida , Akira Watanabe
发明人： Shinichiro Ishihara , Hajime Ashida , Akira Watanabe
IPC分类号： B65G47/24 , B66C1/10 , B65G49/06
CPC分类号： H01L21/67236 , B65G49/063 , B65G49/064 , B65G49/067 , B65G2249/02 , H01L21/67706 , H01L21/67712 , H01L21/67718 , H01L21/67748 , H01L21/67751
摘要： The present invention provides a substrate holding mechanism capable of assuredly holding a substrate and delivering/receiving it: a substrate holding mechanism including a substrate holding unit for holding a rectangular substrate, comprising: a plurality of substrate holding rollers provided at positions corresponding to two opposite sides of the substrate on the substrate holding unit and pivotally supported by the substrate holding unit; and a roller driver for rotating the substrate holding rollers, wherein: the substrate holding roller comprises a cylinder part and a holding flange provided along a portion of a circumference of each end of the cylinder part; and each of the substrate holding rollers is rotated by the roller driver so that a state of holding edges of the substrate by the holding flange and a state of releasing the edges can be switched in accordance with a rotation angle of the substrate holding rollers.
摘要翻译：本发明提供一种能够可靠地保持基板并输送/接收基板的基板保持机构：具有保持矩形基板的基板保持单元的基板保持机构，包括：多个基板保持辊，设置在对应于两个相对的位置的位置基板保持单元上的基板的侧面，并被基板保持单元枢转地支撑; 以及用于旋转所述基板保持辊的滚子驱动器，其中：所述基板保持辊包括沿着所述圆筒部分的每个端部的圆周的一部分设置的圆筒部分和保持凸缘; 并且每个基板保持辊由辊驱动器旋转，使得可以根据基板保持辊的旋转角度来切换由保持凸缘保持基板的保持边缘和释放边缘的状态的状态。

4. 发明授权

US4800174A Method for producing an amorphous silicon semiconductor device using a multichamber PECVD apparatus 失效
标题翻译：使用多室PECVD装置制造非晶硅半导体器件的方法
公开(公告)号：US4800174A
公开(公告)日：1989-01-24
申请号：US50699
申请日：1987-05-18
申请人： Shinichiro Ishihara , Masatoshi Kitagawa , Takashi Hirao
发明人： Shinichiro Ishihara , Masatoshi Kitagawa , Takashi Hirao
IPC分类号： H01L21/205 , C23C16/24 , C23C16/54 , H01L31/04
CPC分类号： C23C16/54 , C23C16/24 , Y10S148/025 , Y10S148/045 , Y10S148/072 , Y10S438/908
摘要： A method of producing an amorphous silicon semiconductor device makes use of a capacitance-coupled high-frequency glow-discharge semiconductor production apparatus which is equipped with a plurality of glow-discharge chambers each having a high-frequency electrode and a substrate holder opposing each other and means for supplying material gases to the glow-discharge chambers. A reaction of a material gas is effected in a first glow-discharge chamber, so as to form a semiconductor layer having a first conductivity type on a substrate introduced into the first glow-discharge chamber, and, after moving the substrate into a second glow-discharge chamber, a reaction of a material gas different from the material gas used in the first glow-discharge chamber is effected, thereby forming a semiconductor layer having a second conductivity type on the semiconductor layer of the first conductivity type. The substrate with the semiconductor layer of the first conductivity formed thereon is moved from the first glow-discharge chamber to the second glow-discharge chamber after a predetermined gas atmosphere is formed in the first glow-discharge chamber. The distance between the electrode and the substrate holder is made smaller in one of the first and second glow-discharge chambers which is designed for forming the thicker one of the semiconductor layers of the first and second conductivity types than in the other of the first and second glow-discharge chambers. The temperature of the substrate is set higher in one of the first and second glow-discharge chambers which is designed for forming the thicker one of the semiconductor layers of the first and second conductivity types than in the other of the first and second glow-discharge chambers.
摘要翻译：一种非晶硅半导体器件的制造方法采用电容耦合高频辉光放电半导体制造装置，该装置配备有多个辉光放电室，每个辉光放电室具有彼此相对的高频电极和衬底保持器以及用于将材料气体供应到辉光放电室的装置。在第一辉光放电室中进行材料气体的反应，以便在引入第一辉光放电室的衬底上形成具有第一导电类型的半导体层，并且在将衬底移动到第二发光进行与第一辉光放电室中使用的材料气体不同的原料气体的反应，由此在第一导电型半导体层上形成具有第二导电类型的半导体层。在第一辉光放电室中形成规定的气体气氛之后，将形成有第一导电性的半导体层的基板从第一辉光放电室向第二辉光放电室移动。在第一和第二辉光放电室之一中，电极和衬底保持器之间的距离较小，被设计用于形成第一和第二导电类型的较厚的一个半导体层，而不是第一和第二导电类型中的另一个，第二个辉光放电室。第一和第二辉光放电室之一的衬底的温度被设定为高于在第一和第二辉光放电中的另一个中形成第一和第二导电类型的较厚的一个半导体层的第一和第二辉光放电室房间。

5. 发明申请

US20070236293A1 High-frequency power amplifier and communication device 失效
标题翻译：高频功率放大器和通讯装置
公开(公告)号：US20070236293A1
公开(公告)日：2007-10-11
申请号：US11783463
申请日：2007-04-10
申请人： Takuya Masuda , Motoyoshi Iwata , Shinichiro Ishihara
发明人： Takuya Masuda , Motoyoshi Iwata , Shinichiro Ishihara
IPC分类号： H03F3/04
CPC分类号： H03F3/189 , H03F1/30
摘要： To provide a high-frequency power amplifier capable of improving the linearity and efficiency of a high-frequency power amplifier by stabilizing, at high frequencies, the bias voltage of a bias circuit featuring the temperature compensating effect of a high-frequency amplifying transistor, a capacitor 61 is connected between the base of a bias supply transistor 41 and a reference potential. It is thus possible to possible to suppress variations in the base voltage of the bias supply transistor 41 in particular when the high-frequency power amplifier is at high output and improve the linearity of the high-frequency power amplifier.
摘要翻译：为了提供能够通过在高频下稳定具有高频放大晶体管的温度补偿效应的偏置电路的偏置电压来提高高频功率放大器的线性度和效率的高频功率放大器，电容器61连接在偏置电源晶体管41的基极和参考电位之间。因此，有可能抑制偏置电源晶体管41的基极电压的变动，特别是当高频功率放大器处于高输出状态并且提高高频功率放大器的线性时。

6. 发明授权

US07872532B2 High-frequency power amplifier and communication device 有权
标题翻译：高频功率放大器和通讯装置
公开(公告)号：US07872532B2
公开(公告)日：2011-01-18
申请号：US12420955
申请日：2009-04-09
申请人： Shinichiro Ishihara , Motoyoshi Iwata , Shingo Enomoto
发明人： Shinichiro Ishihara , Motoyoshi Iwata , Shingo Enomoto
IPC分类号： H03F3/04
CPC分类号： H03F1/302
摘要： It is an object of the present invention to provide a high-frequency power amplifier capable of improving the linearity at the time of high output by preventing decrease in power of bias supply transistor. The high-frequency power amplifier is a high-frequency power amplifier including high-frequency power amplifier transistors and connected in multiple stages and bias supply transistors and each of which supplies bias current to a base of a corresponding one of said high-frequency power amplifier transistors, and each of which is connected to a common power supply terminal which is further connected to a collector of the high-frequency power amplifier transistor at a first stage among said high-frequency power amplifier transistors, and a passive element connected between the common supply terminal and a collector of the corresponding one of said bias supply transistors connected to the high-frequency power amplifier transistor at the first stage.
摘要翻译：本发明的目的是提供一种能够通过防止偏置电源晶体管的功率降低来提高高输出时的线性度的高频功率放大器。高频功率放大器是一种高频功率放大器，包括高频功率放大器晶体管，并连接多级和偏置电源晶体管，并且每个都向所述高频功率放大器的相应一个的基极提供偏置电流晶体管，并且其中的每一个连接到公共电源端子，该公共电源端子在所述高频功率放大器晶体管中的第一级进一步连接到高频功率放大器晶体管的集电极，以及连接在所述高频功率放大器晶体管之间的无源元件电源端子和在第一级连接到高频功率放大器晶体管的相应一个所述偏置电源晶体管的集电极。

7. 发明授权

US4624045A Method of making thin film device 失效
标题翻译：制造薄膜器件的方法
公开(公告)号：US4624045A
公开(公告)日：1986-11-25
申请号：US716604
申请日：1985-03-27
申请人： Shinichiro Ishihara , Takashi Hirao , Koshiro Mori , Masaharu Ono , Masatoshi Kitagawa
发明人： Shinichiro Ishihara , Takashi Hirao , Koshiro Mori , Masaharu Ono , Masatoshi Kitagawa
IPC分类号： H01L31/042 , H01L23/535 , H01L27/142 , H01L31/0224 , H01L31/04 , H01L31/20 , H01L31/18 , H01L27/14
CPC分类号： H01L31/022425 , H01L23/535 , H01L31/046 , H01L31/0465 , H01L31/202 , H01L2924/0002 , Y02E10/50 , Y02P70/521
摘要： A thin film device such as an amorphous thin film solar battery is easily made with high integration by use of metal-diffused regions in the thin film as an electrical connection region across the thickness of the thin film. By use of such metal-diffused regions 24, 24 . . . for connection between transparent stripe shaped electrodes 21', 21'. . . disposed between glass substrate 20 and amorphous silicon thin film 23 and stripe shaped metal electrodes 25, 25 . . . on the top surface of the thin film 23, series connected solar battery cells can be made with a small number of process steps.
摘要翻译：诸如非晶薄膜太阳能电池的薄膜器件通过在薄膜中的金属扩散区域作为跨越薄膜厚度的电连接区域的高集成度容易地制成。通过使用这种金属扩散区域24,24。。。用于透明条状电极21'，21'之间的连接。。。设置在玻璃基板20和非晶硅薄膜23之间以及条状金属电极25,25之间。。。在薄膜23的上表面上，串联的太阳能电池单元可以用少量的工艺步骤制成。

8. 发明授权

US07504887B2 High-frequency power amplifier and communication device 失效
标题翻译：高频功率放大器和通讯装置
公开(公告)号：US07504887B2
公开(公告)日：2009-03-17
申请号：US11783463
申请日：2007-04-10
申请人： Takuya Masuda , Motoyoshi Iwata , Shinichiro Ishihara
发明人： Takuya Masuda , Motoyoshi Iwata , Shinichiro Ishihara
IPC分类号： H03F3/04
CPC分类号： H03F3/189 , H03F1/30
摘要： To provide a high-frequency power amplifier capable of improving the linearity and efficiency of a high-frequency power amplifier by stabilizing, at high frequencies, the bias voltage of a bias circuit featuring the temperature compensating effect of a high-frequency amplifying transistor, a capacitor 61 is connected between the base of a bias supply transistor 41 and a reference potential. It is thus possible to possible to suppress variations in the base voltage of the bias supply transistor 41 in particular when the high-frequency power amplifier is at high output and improve the linearity of the high-frequency power amplifier.
摘要翻译：为了提供能够通过在高频下稳定具有高频放大晶体管的温度补偿效应的偏置电路的偏置电压来提高高频功率放大器的线性度和效率的高频功率放大器，电容器61连接在偏置电源晶体管41的基极和参考电位之间。因此，有可能抑制偏置电源晶体管41的基极电压的变动，特别是当高频功率放大器处于高输出状态并且提高高频功率放大器的线性时。

9. 发明授权

US5660971A Thin film device and a method for fabricating the same 失效
标题翻译：薄膜器件及其制造方法
公开(公告)号：US5660971A
公开(公告)日：1997-08-26
申请号：US632637
申请日：1996-04-15
申请人： Ikunori Kobayashi , Shinichiro Ishihara , Michiko Okafuji
发明人： Ikunori Kobayashi , Shinichiro Ishihara , Michiko Okafuji
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/28 , H01L21/336 , H01L29/40 , H01L29/45 , H01L29/78 , H01L29/786 , G03F7/30 , G03F7/11
CPC分类号： H01L29/66757 , H01L29/458 , H01L29/66765 , G02F2001/13629 , Y10T428/12528 , Y10T428/24917 , Y10T428/31678
摘要： A thin film device includes a substrate, a conductive oxide film formed on the substrate, and a metal film formed on the substrate and in contact with at least a part of the conductive oxide film. The metal film includes aluminum and a metallic material. The metallic material has a standard electrode potential higher than the standard electrode potential of the aluminum so that the standard electrode potential of the metal film is higher than the reduction potential of the conductive oxide film.
摘要翻译：薄膜器件包括衬底，形成在衬底上的导电氧化物膜和形成在衬底上并与至少一部分导电氧化物膜接触的金属膜。金属膜包括铝和金属材料。金属材料具有比铝的标准电极电位高的标准电极电位，使得金属膜的标准电极电位高于导电氧化物膜的还原电位。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式