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1. 发明授权

US07567037B2 High frequency power supply device and plasma generator 有权
标题翻译：高频电源装置和等离子发生器
公开(公告)号：US07567037B2
公开(公告)日：2009-07-28
申请号：US10542289
申请日：2004-01-15
申请人： Yuichi Setsuhara , Tatsuo Shoji , Masayoshi Kamai
发明人： Yuichi Setsuhara , Tatsuo Shoji , Masayoshi Kamai
IPC分类号： H05H1/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/321 , H01J37/3299 , H05H1/46
摘要： A high frequency power supplying device and a plasma generation device using the same includes: two or more inductive antennas; high frequency power sources, respectively supplying power to the antennas; and a vacuum chamber on which the antennas are provided so as to generate a plasma by inductive coupling with high frequency power, wherein each of the high frequency power sources is positioned close to a corresponding antenna. On this account, it is possible to reduce unevenness in high frequency voltages generated in the antennas. Thus, even when a diameter and a volume of the plasma generation section are made larger, it is possible to generate much more uniform plasma, thereby stabilizing (i) thin film formation processes based on the plasma and (ii) plasma ion implantation processes.
摘要翻译：高频供电装置和使用该高频电力装置的等离子体产生装置包括：两个或更多个电感天线; 高频电源，分别向天线供电; 以及真空室，其上设置天线，以便通过高频电力的感应耦合产生等离子体，其中每个高频电源被定位成靠近对应的天线。因此，可以减少在天线中产生的高频电压的不均匀性。因此，即使当等离子体产生部分的直径和体积更大时，也可以产生更均匀的等离子体，从而稳定（i）基于等离子体的薄膜形成过程和（ii）等离子体离子注入工艺。

2. 发明申请

US20060057854A1 High frequency power supply device and plasma generator 有权
公开(公告)号：US20060057854A1
公开(公告)日：2006-03-16
申请号：US10542289
申请日：2004-01-15
申请人： Yuichi Setsuhara , Tatsuo Shoji , Masayoshi Kamai
发明人： Yuichi Setsuhara , Tatsuo Shoji , Masayoshi Kamai
IPC分类号： H01L21/302
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/321 , H01J37/3299 , H05H1/46
摘要： A high frequency power supplying device and a plasma generation device using the same includes: two or more inductive antennas; high frequency power sources, respectively supplying power to the antennas; and a vacuum chamber on which the antennas are provided so as to generate a plasma by inductive coupling with high frequency power, wherein each of the high frequency power sources is positioned close to a corresponding antenna. On this account, it is possible to reduce unevenness in high frequency voltages generated in the antennas. Thus, even when a diameter and a volume of the plasma generation section are made larger, it is possible to generate much more uniform plasma, thereby stabilizing (i) thin film formation processes based on the plasma and (ii) plasma ion implantation processes.

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