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1. 发明授权

US08007964B2 Photomask blank and photomask 有权
标题翻译：光掩模空白和光掩模
公开(公告)号：US08007964B2
公开(公告)日：2011-08-30
申请号：US12709116
申请日：2010-02-19
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
IPC分类号： G03F1/00
CPC分类号： G03F1/46 , G03F1/58 , G03F1/68
摘要： A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.
摘要翻译：用作光掩模材料的光掩模坯料设置有对透明基板上的曝光光具有透明区域和有效不透明区域的掩模图案。在透明板上，形成有一层或多层遮光膜，其中有或没有其它膜（A），构成遮光膜的至少一层（B）包括硅和过渡金属作为主要成分，以及硅与过渡金属的摩尔比为硅：金属= 4-15:1（原子比）。还提供了具有掩模图案的光掩模，该掩模图案具有透明区域和透明板上曝光光线的有效不透明区域。

2. 发明授权

US07771893B2 Photomask blank, photomask and fabrication method thereof 有权
标题翻译：光掩模坯料，光掩模及其制造方法
公开(公告)号：US07771893B2
公开(公告)日：2010-08-10
申请号：US11489477
申请日：2006-07-20
申请人： Hiroki Yoshikawa , Hiroshi Kubota , Yoshinori Kinase , Satoshi Okazaki , Tamotsu Maruyama , Takashi Haraguchi , Masahide Iwakata , Yuichi Fukushima , Tadashi Saga
发明人： Hiroki Yoshikawa , Hiroshi Kubota , Yoshinori Kinase , Satoshi Okazaki , Tamotsu Maruyama , Takashi Haraguchi , Masahide Iwakata , Yuichi Fukushima , Tadashi Saga
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/46 , G03F1/54 , G03F1/58 , Y10T428/24917 , Y10T428/31616
摘要： A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70% or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm−1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film are selected in such a manner that the OD of the light-shielding film is 1.2 to 2.3 for 193 or 248 nm wavelength light.
摘要翻译：在作为光掩模基板的石英等的透明基板的一个主面上形成曝光用遮光膜。遮光膜不仅可以用作所谓的“遮光膜”，而且可以用作抗反射膜。此外，遮光膜的总厚度为100nm以下，其中70％以上的铬化合物的厚度为0.025nm-1，每单位厚度的光密度（OD）对于波长为450nm的光。在光掩模坯料用于制造用于ArF曝光的掩模的情况下，遮光膜的厚度和组成选择为使得遮光膜的OD为193或193的屏蔽膜的OD为1.2至2.3 248 nm波长的光。

3. 发明申请

US20100143831A1 PHOTOMASK BLANK AND PHOTOMASK 有权
标题翻译： PHOTOMASK BLANK和PHOTOMASK
公开(公告)号：US20100143831A1
公开(公告)日：2010-06-10
申请号：US12709116
申请日：2010-02-19
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
IPC分类号： G03F1/00
CPC分类号： G03F1/46 , G03F1/58 , G03F1/68
摘要： A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.
摘要翻译：用作光掩模材料的光掩模坯料设置有对透明基板上的曝光光具有透明区域和有效不透明区域的掩模图案。在透明板上，形成有一层或多层遮光膜，其中有或没有其它膜（A），构成遮光膜的至少一层（B）包括硅和过渡金属作为主要成分，以及硅与过渡金属的摩尔比为硅：金属= 4-15:1（原子比）。还提供了具有掩模图案的光掩模，该掩模图案具有透明区域和透明板上曝光光线的有效不透明区域。

4. 发明申请

US20090057143A1 FILM-DEPOSITING TARGET AND PREPARATION OF PHASE SHIFT MASK BLANK 审中-公开
标题翻译：电泳沉积目标和相移片掩模的制备
公开(公告)号：US20090057143A1
公开(公告)日：2009-03-05
申请号：US12259603
申请日：2008-10-28
申请人： Hiroki YOSHIKAWA , Toshinobu ISHIHARA , Satoshi OKAZAKI , Yukio INAZUKI , Tadashi SAGA , Kimihiro OKADA , Masahide IWAKATA , Takashi HARAGUCHI , Yuichi FUKUSHIMA
发明人： Hiroki YOSHIKAWA , Toshinobu ISHIHARA , Satoshi OKAZAKI , Yukio INAZUKI , Tadashi SAGA , Kimihiro OKADA , Masahide IWAKATA , Takashi HARAGUCHI , Yuichi FUKUSHIMA
IPC分类号： C23C14/14
CPC分类号： G03F1/32 , C23C14/06 , C23C14/3414 , C23C14/3464
摘要： A film-depositing target for use in the manufacture of a halftone phase shift mask blank includes a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film including silicon, molybdenum and zirconium at the same time as constituent elements, and at least two elements, zirconium and molybdenum in a molar ratio Zr/Mo between 0.05 and 5.
摘要翻译：用于制造半色调相移掩模坯料的成膜靶材包括透明基板和具有受控相位和透射率的一层或多层的半透明膜，至少一层半透明膜包括硅，钼和锆，以及至少两种元素，Zr / Mo摩尔比为0.05和5之间的锆和钼。

5. 发明申请

US20070259276A1 Photomask Blank, Photomask and Method for Producing Those 有权
标题翻译：光掩模空白，光掩模和生产方法
公开(公告)号：US20070259276A1
公开(公告)日：2007-11-08
申请号：US11662479
申请日：2005-08-10
申请人： Hiroki Yoshikawa , Yukio Inazuki , Yoshinori Kinase , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
发明人： Hiroki Yoshikawa , Yukio Inazuki , Yoshinori Kinase , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
IPC分类号： G03F1/08 , C23F4/00 , G03F1/14 , H01L21/027
CPC分类号： C23F4/00 , G03F1/32 , G03F1/54 , G03F1/80
摘要： A metal film is provided as a light shielding layer on one principle surface of a photomask substrate. The metal film cannot be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and can be etched by chlorine-based dry etching not containing oxygen (Cl-based dry etching) and fluorine-based dry etching (F-based dry etching). On the light shielding layer, a metal compound film as an antireflective layer. The metal compound film cannot be substantially etched by chlorine-based dry etching not containing oxygen (Cl based) and can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O) based) and fluorine-based dry etching (F based).
摘要翻译：在光掩模基板的一个主表面上设置金属膜作为遮光层。通过含有氧（（Cl + O）基干蚀刻）的基于氯的干蚀刻，不能基本上蚀刻金属膜，并且可以通过不含氧的氯基干法蚀刻（基于Cl的干蚀刻）和氟基干蚀刻（F-干蚀刻）。在遮光层上，作为抗反射层的金属化合物膜。金属化合物膜不能通过不含氧（Cl基）的氯基干蚀刻基本上被蚀刻，并且可以通过含氧（（Cl + O）基）的氯基干蚀刻和氟基干法中的至少一种进行蚀刻蚀刻（基于F）。

6. 发明申请

US20070212618A1 Photomask blank and photomask 有权
标题翻译：光掩模空白和光掩模
公开(公告)号：US20070212618A1
公开(公告)日：2007-09-13
申请号：US11715346
申请日：2007-03-08
申请人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
发明人： Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Tadashi Saga , Yosuke Kojima , Kazuaki Chiba , Yuichi Fukushima
IPC分类号： B32B9/00 , B32B17/10 , B32B17/06 , G03F1/00
CPC分类号： G03F1/32 , G03F1/38 , G03F1/46 , G03F1/58 , G03F1/80 , Y10T428/31616
摘要： A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
摘要翻译：提供一种光掩模坯料，其包括设置在透明基板上的耐蚀刻干蚀刻和通过氯干蚀刻除去的蚀刻停止膜，设置在蚀刻停止膜上的遮光膜，并且包括至少一层由过渡金属/硅材料和设置在遮光膜上的抗反射膜。当光屏蔽膜被干蚀刻以形成图案时，由图案密度依赖性引起的图案尺寸变化减小，使得以高精度产生光掩模。

7. 发明申请

US20060073754A1 Flame retardant pressure-sensitive adhesive tape 审中-公开
标题翻译：阻燃胶粘带
公开(公告)号：US20060073754A1
公开(公告)日：2006-04-06
申请号：US11283765
申请日：2005-11-22
申请人： Takeo Kawaguchi , Shinji Sato , Yuichi Fukushima
发明人： Takeo Kawaguchi , Shinji Sato , Yuichi Fukushima
IPC分类号： B32B27/12 , C09K21/00 , B32B27/04
CPC分类号： C09J7/205 , C08K3/016 , C08K3/22 , C08K5/544 , C09J7/21 , C09J2205/106 , C09J2407/00 , C09J2407/006 , Y10T442/2754
摘要： For providing a flame retardant pressure-sensitive adhesive tape with a substrate, which is odorless, does not corrode or discolor the adherend and at the incineration, does not release a halogen gas or a sulfurous acid gas having an adverse effect on the environment, an odorless and non-halogen flame retardant pressure-sensitive adhesive tape with a cloth substrate is disclosed, comprising a cloth substrate having coated thereon, preferably together with a vulcanized natural rubber-base flame retardant composition layer, a vulcanized natural rubber-base flame retardant pressure-sensitive adhesive layer, both being obtained by a takifier resin, a flame retardant (a metal hydroxide and an inorganic flame retardant aid) and a natural rubber-base elastomer vulcanized with aminoalkylalkoxysilane. The substrate is preferably a flame retardation-treated cloth substrate obtained by impregnating an inflammable cloth substrate with a natural rubber-base flame retardant composition.
摘要翻译：为了提供具有无臭味的基材的阻燃性粘合带，不会使被粘物腐蚀或变色，并且在焚烧时不会释放对环境有不利影响的卤素气体或亚硫酸气体，公开了具有布基材的无臭和无卤阻燃性压敏粘合带，其包含涂布在其上的布基材，优选与硫化天然橡胶基阻燃剂组合物层，硫化天然橡胶基阻燃剂压力两者均通过沥青树脂，阻燃剂（金属氢氧化物和无机阻燃助剂）和用氨基烷基烷氧基硅烷硫化的天然橡胶基弹性体得到。基材优选通过用天然橡胶基阻燃剂组合物浸渍易燃布基材而获得的阻燃处理布基材。

8. 发明申请

US20050244722A1 Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method 有权
标题翻译：半色调相移掩模空白，半色调相移掩模和图案转移方法
公开(公告)号：US20050244722A1
公开(公告)日：2005-11-03
申请号：US11093295
申请日：2005-03-30
申请人： Kimihiro Okada , Masahide Iwakata , Takashi Haraguchi , Mikio Takagi , Yuichi Fukushima , Hiroki Yoshikawa , Toshinobu Ishihara , Satoshi Okazaki , Yukio Inazuki , Tadashi Saga
发明人： Kimihiro Okada , Masahide Iwakata , Takashi Haraguchi , Mikio Takagi , Yuichi Fukushima , Hiroki Yoshikawa , Toshinobu Ishihara , Satoshi Okazaki , Yukio Inazuki , Tadashi Saga
IPC分类号： G03F1/00 , G03C5/00 , B32B9/00 , B32B17/06 , B32B17/10 , G03F9/00
CPC分类号： G03F1/32 , Y10T428/31616
摘要： In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom % of silicon and a plurality of metal elements, typically Mo and Zr or Hf.
摘要翻译：在包括基板，光吸收膜和移相膜的半色调相移掩模坯料中，光吸收膜在上部区域中具有比在下部的金属元素含量高的分布中的4A族金属元素地区。还提供了一种半色调相移掩模坯料，其包括透明基板和具有预选相位差和透射率的单层或多层的半色调相移膜，其中至少一层半色调相移膜含有至少90个原子硅和多个金属元素，通常为Mo和Zr或Hf。

9. 发明申请

US20050217988A1 Film-depositing target and preparation of phase shift mask blank 有权
标题翻译：成膜沉积目标和相移掩模空白的准备
公开(公告)号：US20050217988A1
公开(公告)日：2005-10-06
申请号：US11093297
申请日：2005-03-30
申请人： Hiroki Yoshikawa , Toshinobu Ishihara , Satoshi Okazaki , Yukio Inazuki , Tadashi Saga , Kimihiro Okada , Masahide Iwakata , Takashi Haraguchi , Yuichi Fukushima
发明人： Hiroki Yoshikawa , Toshinobu Ishihara , Satoshi Okazaki , Yukio Inazuki , Tadashi Saga , Kimihiro Okada , Masahide Iwakata , Takashi Haraguchi , Yuichi Fukushima
IPC分类号： C23C14/06 , C23C14/34 , G03F1/32 , G03F1/54 , G03F1/68 , H01L21/027 , C23C14/32
CPC分类号： G03F1/32 , C23C14/06 , C23C14/3414 , C23C14/3464
摘要： For the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising Si, Mo and Zr at the same time, a target comprising at least Zr and Mo in a molar ratio Zr/Mo between 0.05 and 5 is useful.
摘要翻译：为了制造包括透明基板和具有受控相位和透射率的一层或多层的半透明膜的半色调相移掩模坯料，同时至少一层包括Si，Mo和Zr的半透明膜，包含Zr和Mo的摩尔比在0.05和5之间的至少Zr和Mo是有用的。

10. 发明授权

US06610422B1 Coated steel sheet and method for manufacturing the same 失效
标题翻译：涂覆钢板及其制造方法
公开(公告)号：US06610422B1
公开(公告)日：2003-08-26
申请号：US10255374
申请日：2002-09-26
申请人： Toshihiko Ooi , Takafumi Yamaji , Keiji Yoshida , Yuichiro Tanaka , Junichi Inagaki , Masaaki Yamashita , Yasuhiro Majima , Nobuyuki Ishida , Yuichi Fukushima , Norio Inoue , Shinji Hori
发明人： Toshihiko Ooi , Takafumi Yamaji , Keiji Yoshida , Yuichiro Tanaka , Junichi Inagaki , Masaaki Yamashita , Yasuhiro Majima , Nobuyuki Ishida , Yuichi Fukushima , Norio Inoue , Shinji Hori
IPC分类号： B32B1504
CPC分类号： B05D7/546 , B05D2350/65 , C09D5/084 , C23C2/12 , C23C2/26 , C23C2/28 , C23C22/24 , C23C22/30 , C23C22/78 , C23C28/00 , C23C28/3225 , C23C28/345 , Y10S428/933 , Y10S428/939 , Y10T428/12535 , Y10T428/12542 , Y10T428/12549 , Y10T428/12569 , Y10T428/12583 , Y10T428/1259 , Y10T428/12611 , Y10T428/12757 , Y10T428/12799 , Y10T428/31678
摘要： The method for manufacturing coated steel sheet has the steps of: immersing a steel sheet in a hot-dip coating bath to form an Al—Zn base coating layer containing 20 to 95 mass % Al on the steel sheet, forming a passivated layer on the coating layer; and applying thermal history to the coating layer. The thermal history is applied immediately after the steel sheet left the hot-dip coating bath or in a temperature range of from T(° C.) between 130° C. and 300° C. to 100° C.
摘要翻译：制造涂层钢板的方法具有以下步骤：将钢板浸渍在热浸镀浴中，以在钢板上形成含有20〜95质量％Al的Al-Zn基涂层，在该钢板上形成钝化层涂层; 并将热历史应用于涂层。在钢板离开热浸镀浴后或在130℃至300℃之间的T（℃）的温度范围内，立即施加热历史。

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