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1. 发明授权

US07598004B2 Film-depositing target and preparation of phase shift mask blank 有权
标题翻译：成膜沉积目标和相移掩模空白的准备
公开(公告)号：US07598004B2
公开(公告)日：2009-10-06
申请号：US11093297
申请日：2005-03-30
申请人： Hiroki Yoshikawa , Toshinobu Ishihara , Satoshi Okazaki , Yukio Inazuki , Tadashi Saga , Kimihiro Okada , Masahide Iwakata , Takashi Haraguchi , Yuichi Fukushima
发明人： Hiroki Yoshikawa , Toshinobu Ishihara , Satoshi Okazaki , Yukio Inazuki , Tadashi Saga , Kimihiro Okada , Masahide Iwakata , Takashi Haraguchi , Yuichi Fukushima
IPC分类号： G03F1/00 , C25B11/00
CPC分类号： G03F1/32 , C23C14/06 , C23C14/3414 , C23C14/3464
摘要： For the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising Si, Mo and Zr at the same time, a target comprising at least Zr and Mo in a molar ratio Zr/Mo between 0.05 and 5 is useful.
摘要翻译：为了制造包括透明基板和具有受控相位和透射率的一层或多层的半透明膜的半色调相移掩模坯料，同时至少一层包括Si，Mo和Zr的半透明膜，包含Zr和Mo的摩尔比在0.05和5之间的至少Zr和Mo是有用的。

2. 发明申请

US20090057143A1 FILM-DEPOSITING TARGET AND PREPARATION OF PHASE SHIFT MASK BLANK 审中-公开
标题翻译：电泳沉积目标和相移片掩模的制备
公开(公告)号：US20090057143A1
公开(公告)日：2009-03-05
申请号：US12259603
申请日：2008-10-28
申请人： Hiroki YOSHIKAWA , Toshinobu ISHIHARA , Satoshi OKAZAKI , Yukio INAZUKI , Tadashi SAGA , Kimihiro OKADA , Masahide IWAKATA , Takashi HARAGUCHI , Yuichi FUKUSHIMA
发明人： Hiroki YOSHIKAWA , Toshinobu ISHIHARA , Satoshi OKAZAKI , Yukio INAZUKI , Tadashi SAGA , Kimihiro OKADA , Masahide IWAKATA , Takashi HARAGUCHI , Yuichi FUKUSHIMA
IPC分类号： C23C14/14
CPC分类号： G03F1/32 , C23C14/06 , C23C14/3414 , C23C14/3464
摘要： A film-depositing target for use in the manufacture of a halftone phase shift mask blank includes a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film including silicon, molybdenum and zirconium at the same time as constituent elements, and at least two elements, zirconium and molybdenum in a molar ratio Zr/Mo between 0.05 and 5.
摘要翻译：用于制造半色调相移掩模坯料的成膜靶材包括透明基板和具有受控相位和透射率的一层或多层的半透明膜，至少一层半透明膜包括硅，钼和锆，以及至少两种元素，Zr / Mo摩尔比为0.05和5之间的锆和钼。

3. 发明申请

US20050244722A1 Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method 有权
标题翻译：半色调相移掩模空白，半色调相移掩模和图案转移方法
公开(公告)号：US20050244722A1
公开(公告)日：2005-11-03
申请号：US11093295
申请日：2005-03-30
申请人： Kimihiro Okada , Masahide Iwakata , Takashi Haraguchi , Mikio Takagi , Yuichi Fukushima , Hiroki Yoshikawa , Toshinobu Ishihara , Satoshi Okazaki , Yukio Inazuki , Tadashi Saga
发明人： Kimihiro Okada , Masahide Iwakata , Takashi Haraguchi , Mikio Takagi , Yuichi Fukushima , Hiroki Yoshikawa , Toshinobu Ishihara , Satoshi Okazaki , Yukio Inazuki , Tadashi Saga
IPC分类号： G03F1/00 , G03C5/00 , B32B9/00 , B32B17/06 , B32B17/10 , G03F9/00
CPC分类号： G03F1/32 , Y10T428/31616
摘要： In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom % of silicon and a plurality of metal elements, typically Mo and Zr or Hf.
摘要翻译：在包括基板，光吸收膜和移相膜的半色调相移掩模坯料中，光吸收膜在上部区域中具有比在下部的金属元素含量高的分布中的4A族金属元素地区。还提供了一种半色调相移掩模坯料，其包括透明基板和具有预选相位差和透射率的单层或多层的半色调相移膜，其中至少一层半色调相移膜含有至少90个原子硅和多个金属元素，通常为Mo和Zr或Hf。

4. 发明申请

US20050217988A1 Film-depositing target and preparation of phase shift mask blank 有权
标题翻译：成膜沉积目标和相移掩模空白的准备
公开(公告)号：US20050217988A1
公开(公告)日：2005-10-06
申请号：US11093297
申请日：2005-03-30
申请人： Hiroki Yoshikawa , Toshinobu Ishihara , Satoshi Okazaki , Yukio Inazuki , Tadashi Saga , Kimihiro Okada , Masahide Iwakata , Takashi Haraguchi , Yuichi Fukushima
发明人： Hiroki Yoshikawa , Toshinobu Ishihara , Satoshi Okazaki , Yukio Inazuki , Tadashi Saga , Kimihiro Okada , Masahide Iwakata , Takashi Haraguchi , Yuichi Fukushima
IPC分类号： C23C14/06 , C23C14/34 , G03F1/32 , G03F1/54 , G03F1/68 , H01L21/027 , C23C14/32
CPC分类号： G03F1/32 , C23C14/06 , C23C14/3414 , C23C14/3464
摘要： For the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising Si, Mo and Zr at the same time, a target comprising at least Zr and Mo in a molar ratio Zr/Mo between 0.05 and 5 is useful.
摘要翻译：为了制造包括透明基板和具有受控相位和透射率的一层或多层的半透明膜的半色调相移掩模坯料，同时至少一层包括Si，Mo和Zr的半透明膜，包含Zr和Mo的摩尔比在0.05和5之间的至少Zr和Mo是有用的。

5. 发明授权

US06242138B1 Phase shift mask and phase shift mask blank 有权
标题翻译：相移掩模和相移掩模空白
公开(公告)号：US06242138B1
公开(公告)日：2001-06-05
申请号：US09634480
申请日：2000-08-08
申请人： Masaru Mitsui , Kimihiro Okada , Hideki Suda
发明人： Masaru Mitsui , Kimihiro Okada , Hideki Suda
IPC分类号： G03F900
CPC分类号： G03F1/32
摘要： A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.
摘要翻译：半色调型相移掩模以及用于掩模的相移掩模坯料由基本上由氮，金属和硅制成的薄膜光半透明部分形成。每个元素的含量和比例在薄膜中被规定在一定范围内以改善诸如耐酸性，光电阻，电导率，折射率（膜厚），透光率，蚀刻选择性等的膜特性。的光半透明部分。相移掩模以高精度满足光学特性（即透光率和相移量），并且减少薄膜中的缺陷。

6. 发明授权

US07556892B2 Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method 有权
标题翻译：半色调相移掩模空白，半色调相移掩模和图案转移方法
公开(公告)号：US07556892B2
公开(公告)日：2009-07-07
申请号：US11093295
申请日：2005-03-30
申请人： Kimihiro Okada , Masahide Iwakata , Takashi Haraguchi , Mikio Takagi , Yuichi Fukushima , Hiroki Yoshikawa , Toshinobu Ishihara , Satoshi Okazaki , Yukio Inazuki , Tadashi Saga
发明人： Kimihiro Okada , Masahide Iwakata , Takashi Haraguchi , Mikio Takagi , Yuichi Fukushima , Hiroki Yoshikawa , Toshinobu Ishihara , Satoshi Okazaki , Yukio Inazuki , Tadashi Saga
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , Y10T428/31616
摘要： In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom % of silicon and a plurality of metal elements, typically Mo and Zr or Hf.
摘要翻译：在包括基板，光吸收膜和移相膜的半色调相移掩模坯料中，光吸收膜在上部区域中具有比在下部的金属元素含量高的分布中的4A族金属元素地区。还提供了一种半色调相移掩模坯料，其包括透明基板和具有预选相位差和透射率的单层或多层的半色调相移膜，其中至少一层半色调相移膜含有至少90个原子硅和多个金属元素，通常为Mo和Zr或Hf。

7. 发明授权

US6153341A Phase shift mask and phase shift mask blank 有权
公开(公告)号：US6153341A
公开(公告)日：2000-11-28
申请号：US327032
申请日：1999-06-07
申请人： Masaru Mitsui , Kimihiro Okada , Hideki Suda
发明人： Masaru Mitsui , Kimihiro Okada , Hideki Suda
IPC分类号： G03F1/00 , G03F1/32 , G03F9/00
CPC分类号： G03F1/32
摘要： A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.

8. 发明授权

US06475681B2 Phase shift mask and phase shift mask blank 有权
标题翻译：相移掩模和相移掩模空白
公开(公告)号：US06475681B2
公开(公告)日：2002-11-05
申请号：US09814657
申请日：2001-03-22
申请人： Masaru Mitsui , Kimihiro Okada , Hideki Suda
发明人： Masaru Mitsui , Kimihiro Okada , Hideki Suda
IPC分类号： G03F900
CPC分类号： G03F1/32
摘要： A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.
摘要翻译：半色调型相移掩模以及用于掩模的相移掩模坯料由基本上由氮，金属和硅制成的薄膜光半透明部分形成。每个元素的含量和比例在薄膜中被规定在一定范围内以改善诸如耐酸性，光电阻，电导率，折射率（膜厚），透光率，蚀刻选择性等的膜特性。的光半透明部分。相移掩模以高精度满足光学特性（即透光率和相移量），并且减少薄膜中的缺陷。

9. 发明授权

US5942356A Phase shift mask and phase shift mask blank 失效
公开(公告)号：US5942356A
公开(公告)日：1999-08-24
申请号：US825068
申请日：1997-03-27
申请人： Masaru Mitsui , Kimihiro Okada , Hideki Suda
发明人： Masaru Mitsui , Kimihiro Okada , Hideki Suda
IPC分类号： G03F1/00 , G03F1/32 , G03F9/00
CPC分类号： G03F1/32
摘要： A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.

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