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1. 发明授权

US08435645B2 Dielectric device and method of manufacturing dielectric device 有权
标题翻译：电介质器件及其制造方法
公开(公告)号：US08435645B2
公开(公告)日：2013-05-07
申请号：US12727546
申请日：2010-03-19
申请人： Akira Shibue , Tomohiko Kato , Shinichiro Kakei , Yasunobu Oikawa , Kenji Horino
发明人： Akira Shibue , Tomohiko Kato , Shinichiro Kakei , Yasunobu Oikawa , Kenji Horino
IPC分类号： B32B15/00 , H01G4/008
CPC分类号： H01G4/008 , H01G4/12 , H01G4/33 , Y10T428/12493 , Y10T428/12514 , Y10T428/12535 , Y10T428/12583 , Y10T428/1259 , Y10T428/12944 , Y10T428/24851
摘要： A dielectric device comprises a substrate made of a metal and an oxide dielectric layer mounted on a surface of the substrate. The surface of the substrate has metal oxide regions distributed like islands, while the oxide dielectric layer is in close contact with the substrate through the metal oxide regions. Since adhesion is higher in an area where the substrate and the oxide dielectric layer are in close contact with each other through the metal oxide regions distributed like islands on the surface of the substrate, the adhesion between the substrate and oxide dielectric layer in the dielectric device is enhanced. As compared with a case where a rough surface is formed on a metal foil, the metal oxide region and the substrate are inhibited from forming a rough surface, whereby leakage characteristics can be kept from being deteriorated by the rough surface.
摘要翻译：电介质器件包括由金属制成的衬底和安装在衬底表面上的氧化物电介质层。衬底的表面具有像岛状分布的金属氧化物区域，而氧化物介电层通过金属氧化物区域与衬底紧密接触。由于在基板和氧化物电介质层通过在基板表面上分布成岛状的金属氧化物区域彼此紧密接触的区域中的粘附性较高，因此介电装置中的基板与氧化物介电层之间的粘附增强了。与在金属箔上形成粗糙表面的情况相比，金属氧化物区域和基板被抑制形成粗糙表面，从而可以防止粗糙表面的泄漏特性劣化。

2. 发明申请

US20110128669A1 THIN-FILM CAPACITOR 有权
标题翻译：薄膜电容器
公开(公告)号：US20110128669A1
公开(公告)日：2011-06-02
申请号：US12956060
申请日：2010-11-30
申请人： Yoshihiko YANO , Yasunobu OIKAWA , Kenji HORINO , Hitoshi SAITA
发明人： Yoshihiko YANO , Yasunobu OIKAWA , Kenji HORINO , Hitoshi SAITA
IPC分类号： H01G4/20
CPC分类号： H01G4/33 , H01G4/005 , H01G4/012 , H01G4/20
摘要： A thin-film capacitor that is less prone to generation of internal cracking or peeling is provided.In a thin-film capacitor 100 according to the present embodiment, because through holes H are formed in internal electrodes 3, 5, 7, and 9 containing Ni as a principal component in a lamination direction, a surface area of at least some of the through holes H is in the range of 0.19 μm2 to 7.0 μm2, and a ratio of a surface area of the through holes H to a surface area of an entire main surface of the internal electrodes 3, 5, 7, and 9 is in the range of 0.05% to 5%, peeling or cracking is suppressed from occurring at the boundaries between the internal electrodes 3, 5, 7, and 9 and dielectric layers 2, 4, 6, 8, and 10, and as a result, the yield is enhanced.
摘要翻译：提供了不容易产生内部开裂或剥离的薄膜电容器。在本实施方式的薄膜电容器100中，由于在层叠方向上以Ni为主要成分的内部电极3,5,7,9形成通孔H，因此，通孔H在0.19μm2〜7.0μm2的范围内，通孔H的表面积与内部电极3,5,7,9的整个主面的表面积的比例在在内部电极3,5,7和9以及电介质层2,4,6,8和10之间的边界处，抑制了剥离或破裂的范围为0.05％至5％，结果，产量提高。

3. 发明申请

US20100260981A1 DIELECTRIC DEVICE AND METHOD OF MANUFACTURING DIELECTRIC DEVICE 有权
标题翻译：电介质器件及制造电介质器件的方法
公开(公告)号：US20100260981A1
公开(公告)日：2010-10-14
申请号：US12727546
申请日：2010-03-19
申请人： Akira SHIBUE , Tomohiko KATO , Shinichiro KAKEI , Yasunobu OIKAWA , Kenji HORINO
发明人： Akira SHIBUE , Tomohiko KATO , Shinichiro KAKEI , Yasunobu OIKAWA , Kenji HORINO
IPC分类号： B32B3/10 , H01L29/00
CPC分类号： H01G4/008 , H01G4/12 , H01G4/33 , Y10T428/12493 , Y10T428/12514 , Y10T428/12535 , Y10T428/12583 , Y10T428/1259 , Y10T428/12944 , Y10T428/24851
摘要： A dielectric device comprises a substrate made of a metal and an oxide dielectric layer mounted on a surface of the substrate. The surface of the substrate has metal oxide regions distributed like islands, while the oxide dielectric layer is in close contact with the substrate through the metal oxide regions. Since adhesion is higher in an area where the substrate and the oxide dielectric layer are in close contact with each other through the metal oxide regions distributed like islands on the surface of the substrate, the adhesion between the substrate and oxide dielectric layer in the dielectric device is enhanced. As compared with a case where a rough surface is formed on a metal foil, the metal oxide region and the substrate are inhibited from forming a rough surface, whereby leakage characteristics can be kept from being deteriorated by the rough surface.
摘要翻译：电介质器件包括由金属制成的衬底和安装在衬底的表面上的氧化物电介质层。衬底的表面具有像岛状分布的金属氧化物区域，而氧化物介电层通过金属氧化物区域与衬底紧密接触。由于在基板和氧化物电介质层通过在基板表面上分布成岛状的金属氧化物区域彼此紧密接触的区域中的粘附性较高，因此介电装置中的基板与氧化物介电层之间的粘附增强了。与在金属箔上形成粗糙表面的情况相比，金属氧化物区域和基板被抑制形成粗糙表面，从而可以防止粗糙表面的泄漏特性劣化。

4. 发明申请

US20100246091A1 THIN FILM CAPACITOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜电容器及其制造方法
公开(公告)号：US20100246091A1
公开(公告)日：2010-09-30
申请号：US12726846
申请日：2010-03-18
申请人： Eiju KOMURO , Yasunobu Oikawa
发明人： Eiju KOMURO , Yasunobu Oikawa
IPC分类号： H01G4/06 , H01G13/00 , C23F1/02
CPC分类号： H01G4/30 , H01G4/228 , H01G4/33 , H01L28/60 , H01L28/86 , H01L28/88 , Y10T29/43 , Y10T29/435
摘要： A thin film capacitor includes a metal foil, dielectric layers and internal electrode layers alternately disposed on the metal foil, and a top electrode layer on the topmost layer among the two or more dielectric layers. These layers have peripheries that define an outer profile flaring toward the metal foil as viewed from the stacking direction of the thin film capacitor, and at least one dielectric layer of two or more dielectric layers satisfies a relationship B>A>0 wherein A is a gap of the periphery of the internal electrode layer directly below the dielectric layer protruding from the periphery of the dielectric layer, and B is a gap of the periphery of the dielectric layer protruding from the periphery of the internal electrode layer or the top electrode layer directly above the dielectric layer. The thin film capacitor has a structure free from short-circuiting and reducing debris of broken dielectric material.
摘要翻译：薄膜电容器包括交替地设置在金属箔上的金属箔，电介质层和内部电极层，以及两个或更多个电介质层中的最上层的顶部电极层。这些层具有限定从薄膜电容器的堆叠方向观察到的朝向金属箔的外部轮廓的外围，并且两个或更多个介电层的至少一个电介质层满足关系B> A> 0，其中A是内部电极层的周围的间隙从电介质层的周围突出的电介质层的正下方，B是直接从内部电极层或顶部电极层的周围突出的电介质层的周围的间隙在介电层之上。薄膜电容器具有无短路和减少介质损坏的结构的结构。

5. 发明申请

US20090242256A1 ELECTRONIC COMPONENT AND ELECTRONIC COMPONENT MODULE 有权
标题翻译：电子元件和电子元件模块
公开(公告)号：US20090242256A1
公开(公告)日：2009-10-01
申请号：US12410685
申请日：2009-03-25
申请人： Hitoshi Saita , Kenji Horino , Yasunobu Oikawa , Shinichiro Kakei
发明人： Hitoshi Saita , Kenji Horino , Yasunobu Oikawa , Shinichiro Kakei
IPC分类号： H05K1/18
CPC分类号： H05K1/162 , H05K2201/0355 , H05K2201/09509 , H05K2201/09763 , H05K2201/098
摘要： In a dielectric element, the angle θ made by either the top face or the bottom face and the side faces is either 0°
摘要翻译：在电介质元件中，由顶面或底面和侧面形成的角度θ为0°<89°，或91°<180°，并且为89°以外的角度 <=θ<= 91°。通过这种方式，介电元件的侧面与玻璃环氧树脂基板和绝缘材料的接触面积增加，与树脂基板的粘附性提高，并且当埋在两个树脂之间时，可以提高强度和可靠性底物。

6. 发明申请

US20060134834A1 Packaging substrate and manufacturing method thereof, integrated circuit device and manufacturing method thereof, and SAW device 有权
标题翻译：包装基板及其制造方法，集成电路装置及其制造方法以及SAW器件
公开(公告)号：US20060134834A1
公开(公告)日：2006-06-22
申请号：US11333316
申请日：2006-01-18
申请人： Masahiro Nakano , Katsuhiko Gunji , Yasunobu Oikawa , Katsuo Sato
发明人： Masahiro Nakano , Katsuhiko Gunji , Yasunobu Oikawa , Katsuo Sato
IPC分类号： H01L21/48
CPC分类号： H03H9/1071 , H01L2224/16225 , H01L2224/45144 , H03H9/0585 , H03H9/059 , H03H9/08 , H01L2924/00
摘要： A basic portion layer 21 of a substrate electrode 12a connected to a projecting electrode 13 electrically and mechanically on a substrate member of ceramics. The substrate member on which the basic portion layer 21 is formed is subjected to sintering. A surface of the basic portion layer 21 in the sintered substrate member is polished. On the polished basic portion layer 21, the plating layers 22, 23. are formed, so that surface roughness of the substrate electrode 12a may be, for example, not larger than 0.1 μmRMS Accordingly, junction strength of an integrated circuit element mounted on a packaging substrate by a flip-chip method can be improved.
摘要翻译：衬底电极12a的基本部分层21，其在陶瓷的衬底构件上电连接到突出电极13。对其上形成有碱性部分层21的基材进行烧结。研磨烧结基板部件中的基体部分层21的表面。在抛光的基底层21上，形成镀层22,23，使得基板电极12a的表面粗糙度例如可以不大于0.1μm。因此，集成电路元件的结合强度可以提高通过倒装芯片方法的封装衬底。

7. 发明授权

US4799127A Semiconductive ceramic composition and semiconductor ceramic capacitor 失效
标题翻译：半导体陶瓷组合物和半导体陶瓷电容器
公开(公告)号：US4799127A
公开(公告)日：1989-01-17
申请号：US79018
申请日：1987-07-29
申请人： Shuichi Ono , Shuichi Itagaki , Masahiro Yahagi , Kiyoshi Furukawa , Shinobu Fujiwara , Yasunobu Oikawa
发明人： Shuichi Ono , Shuichi Itagaki , Masahiro Yahagi , Kiyoshi Furukawa , Shinobu Fujiwara , Yasunobu Oikawa
IPC分类号： C04B35/47 , H01G4/008 , H01G4/12 , H01G4/10 , C04B41/14 , H01B3/02
CPC分类号： H01G4/008 , C04B35/47 , H01G4/1281 , Y10T29/417 , Y10T29/435
摘要： A semiconductive ceramic composition capable of exhibiting excellent electrical and physical characteristics sufficient to be used for a boundary-layer type semiconductive ceramic capacitor and such a capacitor capable of being increased in dielectric constant and insulation resistance and exhibiting excellent solderability and tensile strength of electrodes. The composition includes a SrTiO.sub.3 base material and an additive for semiconductivity consisting of Y.sub.2 O.sub.3 and Nb.sub.2 O.sub.5. The Y.sub.2 O.sub.3 and Nb.sub.2 O.sub.5 each are present in an amount of 0.1 to 0.4 mol % based on the composition. The capacitor includes a semiconductive ceramic body formed of the composition, a first conductive layer formed on each of both surfaces of the body and a second conductive layer formed on the first conductive layer. A process for manufacturing the capacitor is also provided.
摘要翻译：能够表现出足以用于边界层型半导体陶瓷电容器的优异的电气和物理特性的半导体陶瓷组合物和能够增加介电常数和绝缘电阻并且显示优异的电极的可焊性和拉伸强度的电容器。该组合物包括SrTiO 3基材和由Y 2 O 3和Nb 2 O 5组成的半导电性的添加剂。基于组成，Y 2 O 3和Nb 2 O 5的存在量为0.1〜0.4摩尔％。电容器包括由该组合物形成的半导体陶瓷体，形成在主体的两个表面中的每一个上的第一导电层和形成在第一导电层上的第二导电层。还提供了制造电容器的工艺。

8. 发明授权

US4447549A Non-linear dielectric element 失效
标题翻译：非线性介电元件
公开(公告)号：US4447549A
公开(公告)日：1984-05-08
申请号：US476250
申请日：1983-03-22
申请人： Sho Masujima , Masahide Shibuya , Iwaya Shoichi , Kenichi Umeda , Yasunobu Oikawa , Hisao Abe , Yoshifumi Midori , Shinobu Fujiwara , Nobuaki Kikuchi
发明人： Sho Masujima , Masahide Shibuya , Iwaya Shoichi , Kenichi Umeda , Yasunobu Oikawa , Hisao Abe , Yoshifumi Midori , Shinobu Fujiwara , Nobuaki Kikuchi
IPC分类号： C04B35/46 , C04B35/468 , H01B3/12 , H01G7/02 , H01G7/06 , H03K3/02 , H05B41/04 , H05B41/18
CPC分类号： H01B3/12 , C04B35/4682 , H05B41/046
摘要： A D-E hysteresis loop of ferroelectrics known in the art has a square shape when the ferroelectrics are a BaTiO.sub.3 single crystal. Such ferroelectrics are used as a non-linear dielectric element of, for example a pulse generating device. The non-linear dielectric element according to the present invention consists of a polycrystal, which is mainly composed of BaTiO.sub.3 and has the chemical composition expressed by the formula A.sub.y B.sub.z O.sub.3, wherein the molar ratio of y/z ranges from 0.92 to 0.99. The non-linearity is excellent and the temperature dependence of the A.sub.y B.sub.z O.sub.3 composition is considerably low.
摘要翻译：当铁电体是BaTiO 3单晶时，本领域已知的铁电体的D-E磁滞回线具有正方形形状。这种铁电体用作例如脉冲发生装置的非线性介电元件。根据本发明的非线性介电元件由主要由BaTiO 3组成并具有由式AyBzO3表示的化学组成的多晶体组成，其中y / z的摩尔比范围为0.92至0.99。非线性优异，并且AyBzO3组合物的温度依赖性相当低。

9. 发明授权

US4404029A Non-linear polycrystalline barium titanate-type dielectric element 失效
标题翻译：非线性多晶钛酸钡型电介质元件
公开(公告)号：US4404029A
公开(公告)日：1983-09-13
申请号：US350379
申请日：1982-02-19
申请人： Shoichi Iwaya , Hitoshi Masumura , Yoshifumi Midori , Yasunobu Oikawa , Hisao Abe
发明人： Shoichi Iwaya , Hitoshi Masumura , Yoshifumi Midori , Yasunobu Oikawa , Hisao Abe
IPC分类号： H05B41/18 , C04B35/46 , C04B35/468 , H01B3/12 , H01G7/06 , H03K12/00 , C04B35/00
CPC分类号： C04B35/4682
摘要： A D-E hysteresis loop of ferroelectrics known in the art has a square shape when the ferroelectrics are a BaTiO.sub.3 single crystal. Such ferroelectrics are used as a non-linear dielectric element of, for example a pulse generating device. The non-linear dielectric element according to the present invention consists of a polycrystal mainly composed of Ba(Ti.sub.0.90-0.98 Sn.sub.0.02-1.00)O.sub.3 and having an average grain diameter of from 10 to 60 .mu.m. The non-linearity is excellent and the temperature dependence of the non-linearity is considerably low.
摘要翻译：当铁电体是BaTiO 3单晶时，本领域已知的铁电体的D-E磁滞回线具有正方形形状。这种铁电体用作例如脉冲发生装置的非线性介电元件。根据本发明的非线性电介质元件由主要由Ba（Ti0.90-0.98Sn0.02-1.00）O3组成的平均粒径为10至60μm的多晶体组成。非线性非常好，非线性的温度依赖性相当低。

10. 发明授权

US08411411B2 Thin-film capacitor 有权
标题翻译：薄膜电容器
公开(公告)号：US08411411B2
公开(公告)日：2013-04-02
申请号：US12876611
申请日：2010-09-07
申请人： Yasunobu Oikawa , Yoshihiko Yano
发明人： Yasunobu Oikawa , Yoshihiko Yano
IPC分类号： H01G4/228 , H01G4/008
CPC分类号： H01G4/005 , H01G4/008 , H01G4/33
摘要： To provide a thin-film capacitor capable of preventing the degradation of electrical characteristics caused by direct contact between an adhesion layer of a terminal electrode and a dielectric layer, to increase the reliability. The thin-film capacitor comprises: a dielectric layer deposited on a base electrode; an upper electrode layer deposited on the dielectric layer; a terminal electrode including an adhesion layer, a seed layer, and a plating layer; a resin layer for wiring provided between the upper electrode layer and the terminal electrode for isolating the upper electrode layer from the terminal electrode; and a wiring layer provided so as to extend through the resin layer for wiring in contact with the adhesion layer for electrically connecting the upper electrode layer and the terminal electrode, wherein a composition of the wiring layer differs from that of the adhesion layer of the terminal electrode, and wherein a reducing power of the wiring layer to the dielectric layer is smaller than that of the adhesion layer.
摘要翻译：提供能够防止由端子电极和电介质层的粘附层之间的直接接触引起的电特性劣化的薄膜电容器，以提高可靠性。薄膜电容器包括：沉积在基极上的电介质层; 沉积在电介质层上的上电极层; 包括粘合层，种子层和镀层的端子电极; 用于在上电极层和端子电极之间设置用于将上电极层与端子电极隔离的布线用树脂层; 以及布线层，其设置成延伸穿过用于电连接上电极层和端子电极的粘合层接触的布线用树脂层，其中布线层的组成与端子的粘合层的组成不同电极，并且其中所述布线层到所述电介质层的还原能力小于所述粘合层的还原能力。

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