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    • 5. 发明申请
    • Varistor body and varistor
    • 压敏电阻体和变阻器
    • US20070229208A1
    • 2007-10-04
    • US11727444
    • 2007-03-27
    • Mutsuko Nakano
    • Mutsuko Nakano
    • H01C7/10
    • H01C7/112
    • A preferred varistor body 2 has a structure of alternately laminated internal electrode layer 12 and varistor layer 14. The varistor layer 14 has a composition containing ZnO as the main component, and Co, Pr, and Zr as the auxiliary components. An analysis of the varistor body 2 in the depth direction from the surface thereof satisfies the formula (1) and (2): 0.4×Z1/Z0+0.5≦P1/P0≦0.4×Z1/Z0+0.9   (1) 1
    • 优选的变阻器主体2具有交替层叠的内部电极层12和压敏电阻层14的结构。 可变电阻层14具有含有ZnO作为主要成分的组成,Co,Pr和Zr作为辅助成分。 压敏电阻体2从其表面的深度方向的分析满足式(1)和(2):<?in-line-formula description =“In-line formula”end =“lead”?> 0.4xZ 0 0 +0.5 <= P / P <0> <= 0.4×Z 1 < /SUB>/Z0+0.9(1)<?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula description =“ 在线公式“end =”lead“?> 1 / Z <0 2.2(2)<?in-line-formula description =”In- 线公式“end =”tail“?>其中,Z <0>是在Zr含量几乎恒定的参考深度处的Zr含量,Z <1是Zr含量 在参考深度以上的表面侧的2um的水平上,P <0>是参考深度处的Pr含量,P 1> 1是Pr含量在一定水平 在参考深度以上的表面侧的2um。
    • 8. 发明授权
    • Ceramic element
    • 陶瓷元件
    • US07813104B2
    • 2010-10-12
    • US12359466
    • 2009-01-26
    • Mutsuko NakanoKyoji KosekiHisashi AibaYukihiro MurakamiKazuto Takeya
    • Mutsuko NakanoKyoji KosekiHisashi AibaYukihiro MurakamiKazuto Takeya
    • H01G4/00
    • H01C7/102H01C7/1006H01C7/18
    • A ceramic element, including: a ceramic body having an internal electrode layer and a ceramic layer; an external electrode having a base electrode which is provided on the outside of the ceramic body so as to be electrically connected with the internal electrode layer, and a plating layer covering the outer surface of the base electrode; and a protective layer for covering at least a portion of the outer surface of the ceramic layer other than the portion covered by the external electrode, wherein the protective layer includes a first layer that is an insulating layer containing an insulating oxide, and a second layer that is an insulating layer containing the same insulating oxide as the first layer and an element that is the same as at least one of elements forming the ceramic layer, and the first layer and second layer are formed in that order from the inside.
    • 一种陶瓷元件,包括:具有内部电极层和陶瓷层的陶瓷体; 外部电极,其具有设置在所述陶瓷体的外部以与所述内部电极层电连接的基极;以及覆盖所述基极的外表面的镀层; 以及保护层,用于覆盖除了由外部电极覆盖的部分以外的陶瓷层的外表面的至少一部分,其中保护层包括作为包含绝缘氧化物的绝缘层的第一层和第二层 其是包含与第一层相同的绝缘氧化物的绝缘层和与形成陶瓷层的元素中的至少一种相同的元素,并且第一层和第二层从内部依次形成。
    • 9. 发明授权
    • Varistor body and varistor
    • 压敏电阻体和变阻器
    • US07372357B2
    • 2008-05-13
    • US11727444
    • 2007-03-27
    • Mutsuko Nakano
    • Mutsuko Nakano
    • H01C7/10
    • H01C7/112
    • A preferred varistor body 2 has a structure of alternately laminated internal electrode layer 12 and varistor layer 14. The varistor layer 14 has a composition containing ZnO as the main component, and Co, Pr, and Zr as the auxiliary components. An analysis of the varistor body 2 in the depth direction from the surface thereof satisfies the formula (1) and (2): 0.4×Z1/Z0+0.5≦P1/P0≦0.4×Z1/Z0+0.9  (1) 1
    • 优选的变阻器主体2具有交替层叠内部电极层12和压敏电阻层14的结构。 可变电阻层14具有含有ZnO作为主要成分的组成,Co,Pr和Zr作为辅助成分。 压敏电阻体2从其表面的深度方向的分析满足式(1)和(2):<?in-line-formula description =“In-line formula”end =“lead”?> 0.4xZ 0 0 +0.5 <= P / P <0> <= 0.4×Z 1 < /SUB>/Z0+0.9(1)<?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula description =“ 在线公式“end =”lead“?> 1 / Z <0 2.2(2)<?in-line-formula description =”In- 线公式“end =”tail“?>其中,Z <0>是在Zr含量几乎恒定的参考深度处的Zr含量,Z <1是Zr含量 在参考深度以上的表面侧的2um的水平上,P <0>是参考深度处的Pr含量,P 1> 1是Pr含量在一定水平 在参考深度以上的表面侧的2um。
    • 10. 发明申请
    • Varistor body and varistor
    • 压敏电阻体和变阻器
    • US20070229209A1
    • 2007-10-04
    • US11727512
    • 2007-03-27
    • Mutsuko Nakano
    • Mutsuko Nakano
    • H01C7/10
    • H01C7/112
    • A preferred varistor body has a structure of alternately laminated internal electrode layer and varistor layer made of a varistor material. The varistor layer has a composition containing Zn, Co, Pr, Li, and Zr. The analysis of varistor body in the depth direction from the surface thereof gives the Li content of 0.08 parts by mass or less to 100 parts by mass of the sum of Zn, Co, and Pr contents at a level of 2 μm at the surface side above the reference depth where the Zr content becomes almost constant.
    • 优选的压敏电阻体具有交替层叠的内部电极层和由非线性电阻材料制成的压敏电阻层的结构。 变阻器层具有含有Zn,Co,Pr,Li,Zr的组成。 从表面向深度方向分析变阻器主体的Li含量为0.08质量份以下,相对于表面侧的2μm的Zn,Co,Pr含量之和为100质量份 高于Zr含量几乎恒定的参考深度。