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1. 发明申请

US20090078962A1 Adjustable Field Effect Rectifier 有权
标题翻译：可调整场效应整流器
公开(公告)号：US20090078962A1
公开(公告)日：2009-03-26
申请号：US12238308
申请日：2008-09-25
申请人： Alexei Ankoudinov , Vladimir Rodov
发明人： Alexei Ankoudinov , Vladimir Rodov
IPC分类号： H01L29/68
CPC分类号： H01L29/861 , H01L29/0878 , H01L29/41766 , H01L29/7802
摘要： An Adjustable Field Effect Rectifier uses aspects of MOSFET structure together with an adjustment pocket or region to result in a device that functions reliably and efficiently at high voltages without significant negative resistance, while also permitting fast recovery and operation at high frequency without large electromagnetic interference.
摘要翻译：可调整场效应整流器使用MOSFET结构的一些方面以及调整口袋或区域，以产生在高电压下可靠而高效地工作而无显着的负电阻的器件，同时还允许在高频下快速恢复和操作而没有大的电磁干扰。

2. 发明授权

US06853036B1 Method and apparatus for preventing microcircuit dynamic thermo-mechanical damage during an ESD event 失效
标题翻译：在ESD事件期间防止微电路动态热机械损坏的方法和装置
公开(公告)号：US06853036B1
公开(公告)日：2005-02-08
申请号：US10635390
申请日：2003-08-06
申请人： Vladimir Rodov , Wlodzimierz Woytek Tworzydlo
发明人： Vladimir Rodov , Wlodzimierz Woytek Tworzydlo
IPC分类号： H01L23/62 , H01L27/02
CPC分类号： H01L23/62 , H01L27/0251 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for preventing thermo-mechanical damage to an electrostatic discharge (ESD) protection device is disclosed. The method and apparatus of the invention focus on preventing ESD protection circuit failure due to elastic waves within the materials of an integrated circuit. The elastic waves are specifically caused by very fast ESD discharge events. Disclosed are ESD protection circuits incorporating materials with superior thermo-mechanical properties, in particular, material damping, melting temperature, material stiffness, elastic modulus, tensile strength and fracture toughness. Also disclosed is the use of thermo-mechanical energy absorber material that is designed to protect ESD devices from failure due to slower ESD events.
摘要翻译：公开了一种用于防止对静电放电（ESD）保护装置的热机械损坏的方法和装置。本发明的方法和装置着重于防止由于集成电路的材料内的弹性波而产生的ESD保护电路故障。弹性波特别是由非常快的ESD放电事件引起的。公开了ESD保护电路，其包括具有优异的热机械性能的材料，特别是材料阻尼，熔融温度，材料刚度，弹性模量，拉伸强度和断裂韧性。还公开了使用热机械能量吸收材料，其设计用于保护ESD装置免于由于较慢的ESD事件而的故障。

3. 发明授权

US06420225B1 Method of fabricating power rectifier device 有权
标题翻译：电力整流装置的制造方法
公开(公告)号：US06420225B1
公开(公告)日：2002-07-16
申请号：US09805815
申请日：2001-03-13
申请人： Paul Chang , Vladimir Rodov , Geeng-Chuan Chern , Charles Lin , Ching-Lang Chiang
发明人： Paul Chang , Vladimir Rodov , Geeng-Chuan Chern , Charles Lin , Ching-Lang Chiang
IPC分类号： H01L218234
CPC分类号： H01L29/7802 , H01L21/2815 , H01L27/0727 , H01L27/0814 , H01L27/095 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/66356 , H01L29/66712 , H01L29/781 , H01L29/861
摘要： A vertical semiconductor rectifier device includes a semiconductor substrate of first conductivity type and having a plurality of gates insulatively formed on a first major surface and a plurality of source/drain regions of the first conductivity type formed in surface regions of second conductivity type in the first major surface adjacent to the gates. A plurality of channels of the second conductivity type each abuts a source/drain region and extends under a gate.
摘要翻译：一种垂直半导体整流器件包括第一导电类型的半导体衬底，并且具有绝缘地形成在第一主表面上的多个栅极和在第一导电类型的第一导电类型的表面区域中形成的多个第一导电类型的源极/漏极区域主要表面毗邻门。第二导电类型的多个通道各自邻接源/漏区并在栅极下方延伸。

4. 发明授权

US06331455B1 Power rectifier device and method of fabricating power rectifier devices 有权
标题翻译：电力整流装置及制造电力整流装置的方法
公开(公告)号：US06331455B1
公开(公告)日：2001-12-18
申请号：US09283537
申请日：1999-04-01
申请人： Vladimir Rodov , Wayne Y. W. Hsueh , Paul Chang , Michael Chern
发明人： Vladimir Rodov , Wayne Y. W. Hsueh , Paul Chang , Michael Chern
IPC分类号： H01L21332
CPC分类号： H01L29/7802 , H01L21/2815 , H01L27/0814 , H01L27/095 , H01L29/0634 , H01L29/1095 , H01L29/66712 , H01L29/781 , H01L29/861 , H01L29/872
摘要： A power rectifier having low on resistance, mass recovery times and low forward voltage drop. In a preferred embodiment, the present invention provides a power rectifier device employing a vertical device structure, i.e., with current flow between the major surfaces of the discrete device. The device employs a large number of parallel connected cells, each comprising a MOSFET structure with a gate to drain short via a common metallization. This provides a low Vf path through the channel regions of the MOSFET cells to the source region on the other side of the integrated circuit. A thin gate structure is formed annularly around the pedestal regions on the upper surface of the device and a precisely controlled body implant defines the channel region and allows controllable device characteristics, including gate threshold voltage and Vf. A parallel Schottky diode is also provided which increases the switching speed of the MOSFET cells. The present invention further provides a method for manufacturing a rectifier device which provides highly repeatable device characteristics and which can provide such devices at reduced cost. The active channel regions of the device are defined using pedestals in a double spacer, double implant self-aligned process. The channel dimensions and doping characteristics may be precisely controlled despite inevitable process variations in spacer sidewall formation. Only two masking steps are required, reducing processing costs.
摘要翻译：具有低导通电阻，质量恢复时间和低正向压降的电力整流器。在优选实施例中，本发明提供一种采用垂直装置结构的电力整流装置，即在分立装置主要表面之间的电流流动。该器件采用大量并联连接的单元，每个单元包括具有栅极的MOSFET结构，以通过公共金属化来短路。这提供了通过MOSFET单元的沟道区域到集成电路另一侧的源极区域的低Vf路径。薄栅结构围绕设备的上表面上的基座区域环形地形成，并且精确控制的体植入物限定沟道区域并且允许可控制的器件特性，包括栅极阈值电压和Vf。还提供了并联肖特基二极管，其提高了MOSFET电池的开关速度。本发明还提供一种制造整流器件的方法，其提供高度可重复的器件特性，并且可以以降低的成本提供这样的器件。器件的有源通道区域使用双间隔器中的基座来限定，双注入自对准过程。尽管间隔壁侧壁形成中不可避免的工艺变化也可精确地控制通道尺寸和掺杂特性。只需要两个屏蔽步骤，降低处理成本。

5. 发明授权

US5898982A Thin film capacitors 失效
标题翻译：薄膜电容器
公开(公告)号：US5898982A
公开(公告)日：1999-05-04
申请号：US866589
申请日：1997-05-30
申请人： Richard A. Metzler , Vladimir Rodov
发明人： Richard A. Metzler , Vladimir Rodov
IPC分类号： H01G4/08 , H01G4/10 , H01L21/02 , H01G7/00
CPC分类号： H01L28/91 , H01G4/08 , H01G4/10 , Y10T29/435
摘要： The present invention comprises capacitors, and methods of manufacturing the same, having a plurality of vertical plates formed on a substrate in a manner so as to have a high capacitance in a small space and to have good time and temperature stability. Vertical plates are initially formed as sidewall electrode depositions to pedestals formed on a substrate, and through a series of processing steps, additional vertical plates are formed so that multiple capacitor plate--dielectric--capacitor plate combinations are formed around each of the initial vertical plates. Exemplary embodiments and methods of fabrication are disclosed.
摘要翻译：本发明包括电容器及其制造方法，其具有在基板上形成的多个垂直板，以便在小空间中具有高电容并且具有良好的时间和温度稳定性。垂直板最初形成为形成在基板上的基座的侧壁电极沉积，并且通过一系列处理步骤，形成另外的垂直板，使得在每个初始垂直板周围形成多个电容器板 - 介电电容器板组合。公开了示例性实施例和制造方法。

6. 发明授权

US5825079A Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage 失效
标题翻译：具有低正向导通电压降和低反向电流泄漏的半导体二极管
公开(公告)号：US5825079A
公开(公告)日：1998-10-20
申请号：US787627
申请日：1997-01-23
申请人： Richard A. Metzler , Vladimir Rodov
发明人： Richard A. Metzler , Vladimir Rodov
IPC分类号： H01L29/78 , H01L21/329 , H01L21/336 , H01L29/861 , H01L29/06 , H01L29/76 , H01L29/94 , H01L31/0352
CPC分类号： H01L29/66136 , H01L29/861 , H01L29/66666 , H01L29/7827
摘要： Semiconductor diodes having a low forward voltage conduction drop, a low reverse leakage current and a high voltage capability suitable for use in integrated circuits as well as for discrete devices. The semiconductor diodes are fabricated as field effect devices having a common gate and drain connection by a process which provides very short channels, shallow drain regions and longitudinally graded junctions. Continuation of the gate/drain contact layer over specially located, tapered edge field oxide maximizes the breakdown voltage of the devices. The preferred fabrication technique utilizes four masking steps, all without any critical mask alignment requirements. Various embodiments are disclosed.
摘要翻译：半导体二极管具有低正向电压传导降低，低反向泄漏电流和适用于集成电路以及分立器件的高电压能力。半导体二极管通过提供非常短的通道，浅漏极区域和纵向分级结的工艺制造为具有公共栅极和漏极连接的场效应器件。通过特殊定位的锥形边缘场氧化物继续栅极/漏极接触层可最大限度地提高器件的击穿电压。优选的制造技术利用四个掩模步骤，全部没有任何关键的掩模对准要求。公开了各种实施例。

7. 发明授权

US4722856A Method and apparatus for depositing monomolecular layers on a substrate 失效
标题翻译：在基板上沉积单分子层的方法和装置
公开(公告)号：US4722856A
公开(公告)日：1988-02-02
申请号：US815512
申请日：1986-01-02
申请人： Otto Albrecht , Meir Bartur , Vladimir Rodov
发明人： Otto Albrecht , Meir Bartur , Vladimir Rodov
IPC分类号： B01J19/00 , B05C3/00 , B05C3/02 , B05C3/12 , B05D1/18 , B05D1/20 , B05D1/36 , B05D7/00 , C08J5/18 , H01L21/312 , B29C39/00
CPC分类号： B82Y30/00 , B05C3/02 , B05D1/202 , B05D1/206 , B82Y40/00
摘要： Disclosed is a method and apparatus for continuously forming and depositing a layer of monomolecular amphiphilic molecules on a substrate. The present invention includes an apparatus and method for transferring and compressing an uncompressed molecular layer from one liquid surface region to another adjacent liquid surface region by using non-moving or static mechanical components which do not come into direct contact with the monomolecular layer. The present invention is based on the fact that by continuously flowing liquid from one region to an adjacent region by using non-moving or static mechanical components that do not touch the monomolecular layer, a monomolecular layer having surprisingly little damage can be transported to the adjacent region and simultaneouly compressed by the flowing liquid surface. The monomolecular layer can then be coated onto a substrate. Due to the present invention, it is now commercially feasible to continuously supply one region with a solution of amphiphilic molecules, and then to deposit continuously onto a substrate or onto several substrates within a region in flow communication with the former region, the monomolecular layer which has been compressed and transported into this latter region.
摘要翻译：公开了一种用于在基板上连续形成和沉积单分子两亲分子层的方法和装置。本发明包括通过使用不与单分子层直接接触的非移动或静态机械组分将未压缩分子层从一个液体表面区域转移和压缩到另一相邻液体表面区域的装置和方法。本发明基于以下事实：通过使用不接触单分子层的非移动或静态机械组分将液体从一个区域连续流动到相邻区域，具有惊人的极小损伤的单分子层可以被运送到相邻的并由流动的液体表面同时压缩。然后将单分子层涂覆在基材上。由于本发明，现在商业上可行的是连续地向一个区域提供两亲分子的溶液，然后连续地沉积在与前一个区域流动连通的区域中的基底或几个基底上，单分子层已被压缩并运送到后一个区域。

8. 发明授权

US08148748B2 Adjustable field effect rectifier 有权
标题翻译：可调整场效应整流器
公开(公告)号：US08148748B2
公开(公告)日：2012-04-03
申请号：US12238308
申请日：2008-09-25
申请人： Alexei Ankoudinov , Vladimir Rodov
发明人： Alexei Ankoudinov , Vladimir Rodov
IPC分类号： H01L29/66 , H01L29/74
CPC分类号： H01L29/861 , H01L29/0878 , H01L29/41766 , H01L29/7802
摘要： An Adjustable Field Effect Rectifier uses aspects of MOSFET structure together with an adjustment pocket or region to result in a device that functions reliably and efficiently at high voltages without significant negative resistance, while also permitting fast recovery and operation at high frequency without large electromagnetic interference.
摘要翻译：可调整场效应整流器使用MOSFET结构的一些方面以及调整口袋或区域，可以实现在高电压下可靠而高效地工作而无显着的负电阻的器件，同时还可以在高频下快速恢复和操作，而无需大的电磁干扰。

9. 发明申请

US20110051305A1 Series Current Limiter Device 有权
标题翻译：串联限流器
公开(公告)号：US20110051305A1
公开(公告)日：2011-03-03
申请号：US12773003
申请日：2010-05-03
申请人： Alexei Ankoudinov , Vladimir Rodov , Richard A. Blanchard
发明人： Alexei Ankoudinov , Vladimir Rodov , Richard A. Blanchard
IPC分类号： H02H3/22
CPC分类号： H01L29/7815 , H01L27/088 , H01L29/423 , H01L29/7803 , H01L29/7813 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor protection devices, and related methods and systems, especially devices for providing series current limiting. The device typically comprises two regenerative building blocks and/or MOSFETs connected back-to-back in series, where one of the MOSFETs/Regenerative Building Blocks has an extra voltage probe electrode that provides a regenerative signal with self-limited voltage to the other via coupling to its gate electrode.
摘要翻译：半导体保护装置及相关方法和系统，尤其是用于提供串联电流限制的装置。器件通常包括串联背对背连接的两个再生建筑模块和/或MOSFET，其中一个MOSFET /再生构件模块具有一个额外的电压探针电极，其向另一个通孔提供具有自限制电压的再生信号耦合到其栅电极。

10. 发明授权

US07705368B2 Insulated gate type thyristor 有权
标题翻译：绝缘栅型晶闸管
公开(公告)号：US07705368B2
公开(公告)日：2010-04-27
申请号：US11706184
申请日：2007-02-15
申请人： Vladimir Rodov , Hidenori Akiyama
发明人： Vladimir Rodov , Hidenori Akiyama
IPC分类号： H01L21/332 , H01L29/74
CPC分类号： H01L29/0696 , H01L29/42308 , H01L29/7455 , H01L29/749
摘要： An insulated gate type thyristor includes: a first current terminal semiconductor region of a first conductivity type having a high impurity concentration; a first base semiconductor region of a second conductivity type opposite to the first conductivity type having a low impurity concentration and formed on the first current terminal semiconductor region; a second base semiconductor region of the first conductivity type having a low impurity concentration and formed on the first base semiconductor region; a second current terminal semiconductor region of the second conductivity type having a high impurity concentration and formed on the second base semiconductor region; a trench passing through the second current terminal semiconductor region and entering the second base semiconductor region leaving some depth thereof, along a direction from a surface of the second current terminal semiconductor region toward the first base semiconductor region; and an insulated gate electrode structure formed in the trench.
摘要翻译：绝缘栅型晶闸管包括：具有高杂质浓度的第一导电类型的第一电流端子半导体区域; 形成在第一电流端子半导体区域上的具有低杂质浓度的与第一导电类型相反的第二导电类型的第一基极半导体区域; 形成在第一基极半导体区上的具有低杂质浓度的第一导电类型的第二基极半导体区域; 形成在第二基极半导体区域上的具有高杂质浓度的第二导电类型的第二电流端子半导体区域; 穿过所述第二电流端子半导体区域并且沿着从所述第二电流端子半导体区域的表面朝向所述第一基极半导体区域的方向进入所述第二基极半导体区域的沟槽留下其一定深度; 以及形成在沟槽中的绝缘栅电极结构。

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