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1. 发明授权

US5898982A Thin film capacitors 失效
标题翻译：薄膜电容器
公开(公告)号：US5898982A
公开(公告)日：1999-05-04
申请号：US866589
申请日：1997-05-30
申请人： Richard A. Metzler , Vladimir Rodov
发明人： Richard A. Metzler , Vladimir Rodov
IPC分类号： H01G4/08 , H01G4/10 , H01L21/02 , H01G7/00
CPC分类号： H01L28/91 , H01G4/08 , H01G4/10 , Y10T29/435
摘要： The present invention comprises capacitors, and methods of manufacturing the same, having a plurality of vertical plates formed on a substrate in a manner so as to have a high capacitance in a small space and to have good time and temperature stability. Vertical plates are initially formed as sidewall electrode depositions to pedestals formed on a substrate, and through a series of processing steps, additional vertical plates are formed so that multiple capacitor plate--dielectric--capacitor plate combinations are formed around each of the initial vertical plates. Exemplary embodiments and methods of fabrication are disclosed.
摘要翻译：本发明包括电容器及其制造方法，其具有在基板上形成的多个垂直板，以便在小空间中具有高电容并且具有良好的时间和温度稳定性。垂直板最初形成为形成在基板上的基座的侧壁电极沉积，并且通过一系列处理步骤，形成另外的垂直板，使得在每个初始垂直板周围形成多个电容器板 - 介电电容器板组合。公开了示例性实施例和制造方法。

2. 发明授权

US5825079A Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage 失效
标题翻译：具有低正向导通电压降和低反向电流泄漏的半导体二极管
公开(公告)号：US5825079A
公开(公告)日：1998-10-20
申请号：US787627
申请日：1997-01-23
申请人： Richard A. Metzler , Vladimir Rodov
发明人： Richard A. Metzler , Vladimir Rodov
IPC分类号： H01L29/78 , H01L21/329 , H01L21/336 , H01L29/861 , H01L29/06 , H01L29/76 , H01L29/94 , H01L31/0352
CPC分类号： H01L29/66136 , H01L29/861 , H01L29/66666 , H01L29/7827
摘要： Semiconductor diodes having a low forward voltage conduction drop, a low reverse leakage current and a high voltage capability suitable for use in integrated circuits as well as for discrete devices. The semiconductor diodes are fabricated as field effect devices having a common gate and drain connection by a process which provides very short channels, shallow drain regions and longitudinally graded junctions. Continuation of the gate/drain contact layer over specially located, tapered edge field oxide maximizes the breakdown voltage of the devices. The preferred fabrication technique utilizes four masking steps, all without any critical mask alignment requirements. Various embodiments are disclosed.
摘要翻译：半导体二极管具有低正向电压传导降低，低反向泄漏电流和适用于集成电路以及分立器件的高电压能力。半导体二极管通过提供非常短的通道，浅漏极区域和纵向分级结的工艺制造为具有公共栅极和漏极连接的场效应器件。通过特殊定位的锥形边缘场氧化物继续栅极/漏极接触层可最大限度地提高器件的击穿电压。优选的制造技术利用四个掩模步骤，全部没有任何关键的掩模对准要求。公开了各种实施例。

3. 发明授权

US06103584A Uniform current density and high current gain bipolar transistor 有权
标题翻译：均匀电流密度和高电流增益双极晶体管
公开(公告)号：US06103584A
公开(公告)日：2000-08-15
申请号：US300169
申请日：1999-04-27
申请人： Richard A. Metzler , Vladimir Rodov
发明人： Richard A. Metzler , Vladimir Rodov
IPC分类号： H01L29/08 , H01L29/73 , H01L21/331
CPC分类号： H01L29/0804 , H01L29/73
摘要： A bipolar transistor designed to support a substantially uniform current density in base and collector regions to prevent the characteristic early fall-off of bipolar transistor current gain, and to improve the forward safe operating area performance. The advantages of the present invention are achieved by optimally spacing the neighboring emitters in relation to base thickness and further by maintaining a symmetrical topology by the self-aligned formation of emitters and base contacts. The spacing distance between the neighboring emitters does not exceed the base thickness. As a result, the current density below each emitter island is substantially uniform and the transistor as a whole can conduct a higher total current. Moreover, the transistor inhibits formation of current filaments and hot spots because the electric field in the collector region is uniform.
摘要翻译：设计为支持基极和集电极区域中基本上均匀的电流密度的双极晶体管，以防止双极晶体管电流增益的特征性早期脱落，并改善正向安全工作区域性能。本发明的优点是通过相对于基底厚度最佳间隔相邻的发射体并且进一步通过通过发射器和基极接触的自对准形成保持对称拓扑来实现。相邻发射体之间的间隔距离不超过基底厚度。结果，低于每个发射极岛的电流密度基本上是均匀的，并且整个晶体管可以传导更高的总电流。此外，由于集电区域的电场均匀，所以晶体管抑制了电流丝和热点的形成。

4. 发明授权

US5554880A Uniform current density and high current gain bipolar transistor 失效
标题翻译：均匀电流密度和高电流增益双极晶体管
公开(公告)号：US5554880A
公开(公告)日：1996-09-10
申请号：US287161
申请日：1994-08-08
申请人： Richard A. Metzler , Vladimir Rodov
发明人： Richard A. Metzler , Vladimir Rodov
IPC分类号： H01L29/08 , H01L29/73 , H01L29/00
CPC分类号： H01L29/0804 , H01L29/73
摘要： The present invention discloses method for fabricating, and the structure of, a unique and novel bipolar transistor. The bipolar transistor of the present invention has a substantially uniform current density in base and collector regions. This uniform current density prevents the characteristic early fall-off of bipolar transistor current gain, and improves the forward safe operating area performance. As such, the bipolar transistor of the invention increases current gain at high collector currents, and expands the current and voltage region over which the device may safely operated. The advantages of the present invention are achieved by optimally spacing the neighboring emitters in relation to base thickness and further by maintaining a symmetrical topology by the self-aligned formation of emitters and base contacts. According to the invention, the emitters are optimally spaced so that the current emanating from an emitter would fill base and collector regions beneath and beside the emitter in a fashion to provide a uniform current distribution. As such, the entire base and collector regions below the center of a given emitter conduct the emitter majority carrier current in a substantially uniform manner. Therefore, the current density below each emitter island is substantially uniform and the transistor as a whole can conduct a higher total current. Furthermore, according to the invention, a uniform current flow is established before the carriers move out of the base region. The invented transistor inhibits formation of current filaments and hot spots because the electric field in the collector region is uniform.
摘要翻译：本发明公开了一种独特且新颖的双极晶体管的制造方法和结构。本发明的双极晶体管在基极和集电极区域具有基本均匀的电流密度。这种均匀的电流密度可防止双极晶体管电流增益的特征提前脱落，并提高正向安全工作区的性能。因此，本发明的双极晶体管在高集电极电流下增加了电流增益，并扩展了器件可以安全工作的电流和电压区域。本发明的优点是通过相对于基底厚度最佳间隔相邻的发射体并且进一步通过通过发射器和基极接触的自对准形成保持对称拓扑来实现。根据本发明，发射器被最佳间隔开，使得从发射器发出的电流将以发射器下方和旁边的底部和集电极区域填充以提供均匀的电流分布。因此，给定发射体中心下方的整个基极和集电极区域以基本均匀的方式传导发射极多数载流子电流。因此，低于每个发射极岛的电流密度基本上是均匀的，并且整个晶体管可以传导更高的总电流。此外，根据本发明，在载体移出基部区域之前，建立均匀的电流。本发明的晶体管抑制了电流丝和热点的形成，因为集电区域的电场是均匀的。

5. 发明授权

US6002574A Thin film capacitors 失效
标题翻译：薄膜电容器
公开(公告)号：US6002574A
公开(公告)日：1999-12-14
申请号：US87288
申请日：1998-05-29
申请人： Richard A. Metzler , Vladimir Rodov
发明人： Richard A. Metzler , Vladimir Rodov
IPC分类号： H01G4/08 , H01G4/10 , H01L21/02 , H01G4/005 , H01G4/06
CPC分类号： H01L28/91 , H01G4/08 , H01G4/10 , Y10T29/435
摘要： Capacitors, and methods of manufacturing the same, having a plurality of vertical plates formed on a substrate in a manner so as to have a high capacitance in a small space and to have good time and temperature stability. Vertical plates are initially formed as sidewall electrode depositions to pedestals formed on a substrate, and through a series of processing steps, additional vertical plates are formed so that multiple capacitor plate--dielectric--capacitor plate combinations are formed around each of the initial vertical plates.
摘要翻译：电容器及其制造方法，具有在基板上形成的多个垂直板，以便在小空间中具有高电容并且具有良好的时间和温度稳定性。垂直板最初形成为形成在基板上的基座的侧壁电极沉积，并且通过一系列处理步骤，形成另外的垂直板，使得在每个初始垂直板周围形成多个电容器板 - 介电电容器板组合。

6. 发明授权

US5387805A Field controlled thyristor 失效
标题翻译：现场控制晶闸管
公开(公告)号：US5387805A
公开(公告)日：1995-02-07
申请号：US177686
申请日：1994-01-05
申请人： Richard A. Metzler , Vladimir Rodov
发明人： Richard A. Metzler , Vladimir Rodov
IPC分类号： H01L29/08 , H01L29/74 , H01L29/745 , H01L29/747
CPC分类号： H01L29/0839 , H01L29/742 , H01L29/745
摘要： A readily manufacturable field controlled thyristor with a first semiconductor region of n-type conductivity, a second semiconductor region of p-type in contact with said first region, a void penetrating through said first and second semiconductor regions, a fourth semiconductor region of n-type forming a channel adjacent to said void, a fifth semiconductor region, of p-type, in contact with said third region. The device has a large tolerance for deviations in process parameter precision and accuracy, which enables the device to be produced at a low cost.
摘要翻译：一种具有n型导电性的第一半导体区域，与所述第一区域接触的p型的第二半导体区域，穿透所述第一和第二半导体区域的空穴的易制造的场控晶闸管，形成与所述空隙相邻的通道，与所述第三区域接触的p型的第五半导体区域。该装置对于过程参数精度和精度的偏差具有很大的公差，从而能够以低成本生产该装置。

7. 发明授权

US5932922A Uniform current density and high current gain bipolar transistor 失效
公开(公告)号：US5932922A
公开(公告)日：1999-08-03
申请号：US818643
申请日：1997-03-14
申请人： Richard A. Metzler , Vladimir Rodov
发明人： Richard A. Metzler , Vladimir Rodov
IPC分类号： H01L29/08 , H01L29/73 , H01L29/00
CPC分类号： H01L29/0804 , H01L29/73
摘要： A bipolar transistor designed to support a substantially uniform current density in base and collector regions to prevent the characteristic early fall-off of bipolar transistor current gain, and to improve the forward safe operating area performance. The advantages of the present invention are achieved by optimally spacing the neighboring emitters in relation to base thickness and further by maintaining a symmetrical topology by the self-aligned formation of emitters and base contacts. The spacing distance between the neighboring emitters does not exceed the base thickness. As a result, the current density below each emitter island is substantially uniform and the transistor as a whole can conduct a higher total current. Moreover, the transistor inhibits formation of current filaments and hot spots because the electric field in the collector region is uniform.

8. 发明授权

US06958275B2 MOSFET power transistors and methods 失效
标题翻译： MOSFET功率晶体管及方法
公开(公告)号：US06958275B2
公开(公告)日：2005-10-25
申请号：US10385807
申请日：2003-03-11
申请人： Richard A. Metzler
发明人： Richard A. Metzler
IPC分类号： H01L21/336 , H01L29/06 , H01L29/08 , H01L29/417 , H01L29/49 , H01L29/78 , H01L21/00 , H01L21/8242 , H01L21/20 , H01L21/4763
CPC分类号： H01L29/7827 , H01L29/0619 , H01L29/0847 , H01L29/41741 , H01L29/41766 , H01L29/41775 , H01L29/4925 , H01L29/7802 , H01L29/7809 , H01L29/7813
摘要： Trench MOSFETs and self aligned processes for fabricating trench MOSFETs. These processes produce a higher density of trenches per unit area than can be obtained using prior art masking techniques. The invention self aligns all processing steps (implants, etches, depositions, etc.) to a single mask, thus reducing the pitch of the trenches by the added distances required for multiple masking photolithographic tolerances. The invention also places the source regions and contacts within the side walls of the trenches, thus eliminating the lateral dimensions required, for masking and source depositions or implants from the top surface, from the pitch of the trenches. Various embodiments are disclosed.
摘要翻译：沟槽MOSFET和用于制造沟槽MOSFET的自对准工艺。这些方法产生比使用现有技术掩蔽技术可获得的每单位面积更高的沟槽密度。本发明将所有处理步骤（植入物，蚀刻，沉积等）对齐到单个掩模，从而将沟槽的间距减小多个掩模光刻公差所需的附加距离。本发明还将源极区域和触点放置在沟槽的侧壁内，从而消除了所需的横向尺寸，用于从顶表面掩模和源沉积或植入物与沟槽的间距。公开了各种实施例。

9. 发明申请

US20100029048A1 Field Effect Semiconductor Diodes and Processing Techniques 审中-公开
标题翻译：场效应半导体二极管和处理技术
公开(公告)号：US20100029048A1
公开(公告)日：2010-02-04
申请号：US12578443
申请日：2009-10-13
申请人： Richard A. Metzler , Frederick A. Flitsch
发明人： Richard A. Metzler , Frederick A. Flitsch
IPC分类号： H01L21/04
CPC分类号： H01L29/861 , H01L21/26586 , H01L21/76895 , H01L29/0623 , H01L29/0696 , H01L29/105 , H01L29/1095 , H01L29/66075 , H01L29/66734 , H01L29/7813 , H01L29/7827
摘要： Field effect semiconductor diodes and improved processing techniques for forming the field effect semiconductor diodes having semiconductor layers forming a source, a body and a drain of a field effect device, the semiconductor layers forming pedestals having an insulating layer and a gate on sides thereof vertically spanning the body and a part of the source and drain layers, and a conductive contact layer over the pedestals making electrical contact with the drain and the gate, the conductive layer being in contact with the body at least one position on each pedestal. The conductive layer may be in contact with the body through at least one opening in the source layer, or the source layer may be a discontinuous doped layer, the body layer extending between the discontinuous doped layer forming the source layer to be in electrical contact with the conductive layer. Other aspects and variations of the invention are disclosed.
摘要翻译：场效应半导体二极管和用于形成场效应半导体二极管的改进的处理技术，半导体二极管具有形成场效应器件的源极，体和漏极的半导体层，半导体层形成具有绝缘层的基座和在其侧面上的栅极垂直跨越所述主体和所述源极和漏极层的一部分以及在所述基座上与所述漏极和所述栅极电接触的导电接触层，所述导电层与所述主体在每个基座上的至少一个位置接触。导电层可以通过源层中的至少一个开口与本体接触，或者源层可以是不连续掺杂层，主体层在形成源极的不连续掺杂层之间延伸以与导电层。公开了本发明的其它方面和变型。

10. 发明授权

US06433370B1 Method and apparatus for cylindrical semiconductor diodes 失效
标题翻译：圆柱半导体二极管的方法和装置
公开(公告)号：US06433370B1
公开(公告)日：2002-08-13
申请号：US09502026
申请日：2000-02-10
申请人： Richard A. Metzler
发明人： Richard A. Metzler
IPC分类号： H01L29808
CPC分类号： H01L29/66136 , H01L27/0814 , H01L29/0657 , H01L29/0692 , H01L29/861
摘要： Semiconductor diodes are diode connected cylindrical junction field effect devices having one diode terminal as the common connection between a top gate, a back gate and a first channel terminal of the cylindrical junction field effect devices. The second diode terminal of the semiconductor diodes being the second channel terminal of the diode connected cylindrical junction field effect devices. The method of processing the cylindrical junction field effect devices provide very short channels, shallow diffused regions and trench terminated junctions at the edges of the active device for low forward voltage turn-on and high reverse bias breakdown. The trench terminated junctions spread the breakdown energy over the entire active device region rather than just device edges.
摘要翻译：半导体二极管是二极管连接的圆柱形结场效应器件，其具有一个二极管端子作为圆柱形结场效应器件的顶栅极，背栅极和第一沟道端子之间的公共连接。半导体二极管的第二二极管端子是二极管的第二通道端子，连接圆柱形结场效应器件。处理圆柱形结场效应器件的方法在有源器件的边缘处提供非常短的通道，浅扩散区域和沟槽端接结，用于低正向电压开启和高反向偏压击穿。沟槽终止的连接点在整个有源器件区域上扩散击穿能量，而不仅仅是器件边缘。

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