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1. 发明申请

WO2007036897A2 IMPROVEMENTS IN OR RELATING TO THIN-FILM BULK-ACOUSTIC WAVE (BAW) RESONATORS 审中-公开
标题翻译：或与薄膜大声波（BAW）谐振器相关的改进
公开(公告)号：WO2007036897A2
公开(公告)日：2007-04-05
申请号：PCT/IB2006053534
申请日：2006-09-28
申请人： KONINKL PHILIPS ELECTRONICS NV , MILSON ROBERT F , VANHELMONT FREDERIK W M , JANSMANN ANDREAS B M , RUIGROK JAAP , LOEBL HANS-PETER
发明人： MILSON ROBERT F , VANHELMONT FREDERIK W M , JANSMANN ANDREAS B M , RUIGROK JAAP , LOEBL HANS-PETER
IPC分类号： H03H9/17
CPC分类号： H03H9/02118 , H03H9/0211 , H03H9/174 , H03H9/175
摘要： A thin-film bulk acoustic wave (BAW) resonator, such as SBAR or FBAR, for use in RF selectivity filters operating at frequencies of the order of 1 GHz. The BAW resonator comprises a piezoelectric layer (14) having first and second surfaces on opposing sides, a first electrode (16) extending over the first surface, and a second electrode (12) extending over the second surface, the extent of the area of overlap (R1 ) of the first and second electrodes determining the region of excitation of the fundamental thickness extensional (TE) mode of the resonator. The insertion loss to the resonator is reduced by providing a dielectric material (18) in the same layer as the first electrode (16) and surrounding that electrode. The material constituting the dielectric material (18) has a different mass, typically between 5% and 15 %, from the material comprising the first electrode (16) it surrounds. The mass of the dielectric material (18) can be lower or higher than the mass of the first electrode (16). Planarisation of the dielectric material (18) enhances the performance of the device.
摘要翻译：一种薄膜体声波（BAW）谐振器，例如SBAR或FBAR，用于在1 GHz频率工作的RF选择性滤波器。 BAW谐振器包括在相对侧上具有第一和第二表面的压电层（14），在第一表面上延伸的第一电极（16）和在第二表面上延伸的第二电极（12）确定谐振器的基本厚度延伸（TE）模式的激励区域的第一和第二电极的重叠（R1）。通过在与第一电极（16）相同的层中提供介电材料（18）并围绕该电极来减小谐振器的插入损耗。构成电介质材料（18）的材料与其包围的第一电极（16）的材料具有不同的质量，通常在5％至15％之间。电介质材料（18）的质量可以低于或高于第一电极（16）的质量。介电材料（18）的平面化增强了器件的性能。

2. 发明申请

WO2004109725A1 METHOD OF MANUFACTURING A DEVICE WITH A MAGNETIC LAYER-STRUCTURE 审中-公开
标题翻译：制造具有磁性层结构的器件的方法
公开(公告)号：WO2004109725A1
公开(公告)日：2004-12-16
申请号：PCT/IB2004/050811
申请日：2004-06-01
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , RUIGROK, Jacobus, J., M. , VAN ZON, Joannes, B., A., D. , VANHELMONT, Frederik W., M. , GEVEN, Willem, J., A.
发明人： RUIGROK, Jacobus, J., M. , VAN ZON, Joannes, B., A., D. , VANHELMONT, Frederik W., M. , GEVEN, Willem, J., A.
IPC分类号： H01F41/14
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3173 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/12 , Y10T428/1107
摘要： A method of manufacturing a device with a magnetic layer-structure is disclosed, the method comprising the steps of: - forming the magnetic layer-structure (2), - heating the magnetic layer-structure with an electric current, wherein the electric current is a pulse (3) having a duration such that no substantial heat transfer from the layer-structure to the environment (4) of the layer- structure takes place, so that the temperature of said environment before and after the current pulse is substantially the same. Heat is substantially dissipated in the layer-structure. The method therefore allows the selection of physical processes in the layer-structure in order to optimize the magnetic or electrical characteristic of the magnetoresistive device, without disturbing the environment such as neighboring devices. The method can advantageously be used to set different magnetization directions (9, 10) in the bias layers (5,7) of different magnetoresistive devices (12,13,14,15) arranged in a Wheatstone bridge configuration (16), or to reduce offset in the output characteristic of said Wheatstone bridge.
摘要翻译：公开了一种制造具有磁性层结构的器件的方法，该方法包括以下步骤：形成磁性层结构（2）， - 用电流加热磁性层结构，其中电流为具有持续时间的脉冲（3），使得不会发生从层结构到层结构的环境（4）的实质热传递，使得在电流脉冲之前和之后的所述环境的温度基本相同。热量基本上消散在层结构中。因此，该方法允许在层结构中选择物理过程，以便优化磁阻器件的磁特性或电特性，而不会干扰诸如相邻器件的环境。该方法可以有利地用于设置布置在惠斯登电桥配置（16）中的不同磁阻器件（12,13,14,15）的偏置层（5,7）中的不同磁化方向（9,10），或者减少惠斯通电桥输出特性的偏移。

3. 发明申请

WO2007072409A3 A MEMS RESONATOR, A METHOD OF MANUFACTURING THEREOF, AND A MEMS OSCILLATOR 审中-公开
标题翻译： MEMS谐振器，其制造方法和MEMS振荡器
公开(公告)号：WO2007072409A3
公开(公告)日：2007-10-18
申请号：PCT/IB2006054931
申请日：2006-12-18
申请人： NXP BV , VAN BEEK JOZEF T M , LOEBL HANS-PETER , VANHELMONT FREDERIK W M
发明人： VAN BEEK JOZEF T M , LOEBL HANS-PETER , VANHELMONT FREDERIK W M
IPC分类号： H03H9/02 , H03H3/007 , H03H9/24
CPC分类号： H03H9/02448 , H03H3/0072 , H03H9/2447 , H03H2009/02496 , Y10T29/42
摘要： The invention relates to a MEMS resonator comprising a movable element (48), the movable element (48) comprising a first part (A) having a first Young's modulus and a first temperature coefficient of the first Young's modulus, and the movable element (48) further comprising a second part (B) having a second Young's modulus and a second temperature coefficient of the second Young's modulus, a sign of the second temperature coefficient being opposite to a sign of the first temperature coefficient, at least, at operating conditions of the MEMS resonator, and a cross-sectional area of the first part (A) and the cross-sectional area of the second part (B) being such that the absolute temperature coefficient of the Young's modulus of the first part (A) multiplied by the cross-sectional area of the first part (A) does not deviate more than 20% from the absolute temperature coefficient of the Young's modulus of the second part (B) multiplied by the cross-sectional area of the second part (B), the cross-sectional areas being measured locally and perpendicularly to the movable element (48).
摘要翻译：本发明涉及一种包括可移动元件（48）的MEMS谐振器，所述可移动元件（48）包括具有第一杨氏模量和第一杨氏模量的第一温度系数的第一部分（A）和可移动元件（48））还包括具有第二杨氏模量和第二杨氏模量的第二温度系数的第二部分（B），所述第二温度系数的符号与所述第一温度系数的符号相反，至少在所述MEMS谐振器以及所述第一部分（A）的横截面面积和所述第二部分（B）的横截面面积使得所述第一部分（A）的杨氏模量的绝对温度系数乘以第一部分（A）的横截面面积与第二部分（B）的杨氏模量的绝对温度系数乘以第二部分（B）的横截面积不相差大于20％横截面面积被局部地和垂直于可移动元件（48）测量。

4. 发明申请

WO2007072409A2 A MEMS RESONATOR, A METHOD OF MANUFACTURING THEREOF, AND A MEMS OSCILLATOR 审中-公开
标题翻译： MEMS谐振器，其制造方法以及MEMS振荡器
公开(公告)号：WO2007072409A2
公开(公告)日：2007-06-28
申请号：PCT/IB2006/054931
申请日：2006-12-18
申请人： NXP B.V. , VAN BEEK, Jozef, T., M. , LOEBL, Hans-Peter , VANHELMONT, Frederik, W., M.
发明人： VAN BEEK, Jozef, T., M. , LOEBL, Hans-Peter , VANHELMONT, Frederik, W., M.
IPC分类号： H03H9/02 , H03H3/007
CPC分类号： H03H9/02448 , H03H3/0072 , H03H9/2447 , H03H2009/02496 , Y10T29/42
摘要： The invention relates to a MEMS resonator comprising a movable element (48), the movable element (48) comprising a first part (A) having a first Young's modulus and a first temperature coefficient of the first Young's modulus, and the movable element (48) further comprising a second part (B) having a second Young's modulus and a second temperature coefficient of the second Young's modulus, a sign of the second temperature coefficient being opposite to a sign of the first temperature coefficient, at least, at operating conditions of the MEMS resonator, and a cross-sectional area of the first part (A) and the cross-sectional area of the second part (B) being such that the absolute temperature coefficient of the Young's modulus of the first part (A) multiplied by the cross-sectional area of the first part (A) does not deviate more than 20% from the absolute temperature coefficient of the Young's modulus of the second part (B) multiplied by the cross-sectional area of the second part (B), the cross-sectional areas being measured locally and perpendicularly to the movable element (48).
摘要翻译：本发明涉及一种包括可移动元件（48）的MEMS谐振器，可移动元件（48）包括具有第一杨氏模量和第一杨氏模量的第一温度系数的第一部分（A）并且所述可移动元件（48）还包括具有第二杨氏模量和第二杨氏模量的第二温度系数的第二部分（B），所述第二温度系数的符号与所述第一温度系数的符号相反至少在MEMS谐振器的操作条件下，第一部分（A）的横截面积和第二部分（B）的横截面积使得杨氏模量的绝对温度系数第一部分（A）乘以第一部分（A）的横截面积与第二部分（B）的杨氏模量的绝对温度系数乘以横截面积的偏差不超过20％的秒（B），所述横截面积局部地且垂直于所述可移动元件（48）测量。

5. 发明申请

WO2006126168B1 BULK ACOUSTIC WAVE RESONATOR DEVICE 审中-公开
标题翻译：大容量声波谐振器装置
公开(公告)号：WO2006126168B1
公开(公告)日：2007-04-12
申请号：PCT/IB2006051653
申请日：2006-05-23
申请人： KONINKL PHILIPS ELECTRONICS NV , PHILIPS INTELLECTUAL PROPERTY , MILSOM ROBERT F , VANHELMONT FREDERIK W M , JANSMAN ANDREAS B M , RUIGROK JAAP , LOEBL HANS-PETER
发明人： MILSOM ROBERT F , VANHELMONT FREDERIK W M , JANSMAN ANDREAS B M , RUIGROK JAAP , LOEBL HANS-PETER
IPC分类号： H03H9/17
CPC分类号： H03H9/02228 , H03H9/171 , H03H9/175
摘要： A bulk acoustic wave, BAW, resonator device comprising first and second metal layers (10, 20) and an intervening piezoelectric layer (30), the first metal layer (10) comprising spaced first and second portions (12, 14), wherein the first and second portions (12, 14) are each arranged as a plurality of interconnected fingers (16, 18), and wherein each of the plurality of fingers (16) of the first portion (12) is acoustically coupled to at least one of the fingers (18) of the second portion (14) . In one embodiment the fingers of the first portion (12) are interlaced with the fingers (18) of the second portion (14), thereby providing direct coupling. In another embodiment the acoustic coupling between the fingers of the first and second portions is provided indirectly by further portions (15) of the first metal layer (10).
摘要翻译：一种包括第一和第二金属层（10,20）和中间压电层（30）的体声波BAW谐振器装置，第一金属层（10）包括间隔开的第一和第二部分（12,14），其中第一部分（12）和第二部分（14）各自被布置为多个互连的指状物（16,18），并且其中第一部分（12）的多个指状物（16）中的每一个声学地耦合到以下中的至少一个：第二部分（14）的指状物（18）。在一个实施例中，第一部分（12）的指状物与第二部分（14）的指状物（18）交织，由此提供直接耦合。在另一个实施例中，第一和第二部分的指状物之间的声耦合由第一金属层（10）的另外的部分（15）间接提供。

6. 发明申请

WO2006126168A8 BULK ACOUSTIC WAVE RESONATOR DEVICE 审中-公开
标题翻译：大容量声波谐振器装置
公开(公告)号：WO2006126168A8
公开(公告)日：2007-03-01
申请号：PCT/IB2006051653
申请日：2006-05-23
申请人： KONINKL PHILIPS ELECTRONICS NV , PHILIPS INTELLECTUAL PROPERTY , MILSOM ROBERT F , VANHELMONT FREDERIK W M , JANSMAN ANDREAS B M , RUIGROK JAAP , LOEBL HANS-PETER
发明人： MILSOM ROBERT F , VANHELMONT FREDERIK W M , JANSMAN ANDREAS B M , RUIGROK JAAP , LOEBL HANS-PETER
IPC分类号： H03H9/17
CPC分类号： H03H9/02228 , H03H9/171 , H03H9/175
摘要： A bulk acoustic wave, BAW, resonator device comprising first and second metal layers (10, 20) and an intervening piezoelectric layer (30), the first metal layer (10) comprising spaced first and second portions (12, 14), wherein the first and second portions (12, 14) are each arranged as a plurality of interconnected fingers (16, 18), and wherein each of the plurality of fingers (16) of the first portion (12) is acoustically coupled to at least one of the fingers (18) of the second portion (14) . In one embodiment the fingers of the first portion (12) are interlaced with the fingers (18) of the second portion (14), thereby providing direct coupling. In another embodiment the acoustic coupling between the fingers of the first and second portions is provided indirectly by further portions (15) of the first metal layer (10).
摘要翻译：包括第一和第二金属层（10,20）和中间压电层（30）的体声波BAW谐振器装置，所述第一金属层（10）包括间隔开的第一和第二部分（12,14），其中第一和第二部分（12,14）各自布置为多个互连的指状物（16,18），并且其中第一部分（12）的多个指状物（16）中的每一个与声音耦合至少一个第二部分（14）的指状物（18）。在一个实施例中，第一部分（12）的指状物与第二部分（14）的指状物（18）交织，从而提供直接耦合。在另一个实施例中，第一和第二部分的指状物之间的声学耦合由第一金属层（10）的另外的部分（15）间接提供。

7. 发明申请

WO2007036897A3 IMPROVEMENTS IN OR RELATING TO THIN-FILM BULK-ACOUSTIC WAVE (BAW) RESONATORS 审中-公开
公开(公告)号：WO2007036897A3
公开(公告)日：2007-04-05
申请号：PCT/IB2006/053534
申请日：2006-09-28
申请人： NXP B.V. , MILSON, Robert, F. , VANHELMONT, Frederik, W., M. , JANSMANN, Andreas, B., M. , RUIGROK, Jaap , LOEBL, Hans-Peter
发明人： MILSON, Robert, F. , VANHELMONT, Frederik, W., M. , JANSMANN, Andreas, B., M. , RUIGROK, Jaap , LOEBL, Hans-Peter
IPC分类号： H03H9/17 , H03H9/13
摘要： A thin-film bulk acoustic wave (BAW) resonator, such as SBAR or FBAR, for use in RF selectivity filters operating at frequencies of the order of 1 GHz. The BAW resonator comprises a piezoelectric layer (14) having first and second surfaces on opposing sides, a first electrode (16) extending over the first surface, and a second electrode (12) extending over the second surface, the extent of the area of overlap (R1 ) of the first and second electrodes determining the region of excitation of the fundamental thickness extensional (TE) mode of the resonator. The insertion loss to the resonator is reduced by providing a dielectric material (18) in the same layer as the first electrode (16) and surrounding that electrode. The material constituting the dielectric material (18) has a different mass, typically between 5% and 15 %, from the material comprising the first electrode (16) it surrounds. The mass of the dielectric material (18) can be lower or higher than the mass of the first electrode (16). Planarisation of the dielectric material (18) enhances the performance of the device.

8. 发明申请

WO2006126168A1 BULK ACOUSTIC WAVE RESONATOR DEVICE 审中-公开
标题翻译：大容量声波谐振器装置
公开(公告)号：WO2006126168A1
公开(公告)日：2006-11-30
申请号：PCT/IB2006/051653
申请日：2006-05-23
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH , MILSOM, Robert, F. , VANHELMONT, Frederik, W., M. , JANSMAN, Andreas, B., M. , RUIGROK, Jaap , LOEBL, Hans-Peter
发明人： MILSOM, Robert, F. , VANHELMONT, Frederik, W., M. , JANSMAN, Andreas, B., M. , RUIGROK, Jaap , LOEBL, Hans-Peter
IPC分类号： H03H9/17
CPC分类号： H03H9/02228 , H03H9/171 , H03H9/175
摘要： A bulk acoustic wave, BAW, resonator device comprising first and second metal layers (10, 20) and an intervening piezoelectric layer (30), the first metal layer (10) comprising spaced first and second portions (12 14), wherein the first and second portions (12, 14) are each arranged as a plurality of interconnected fingers (16, 18), and wherein each of the plurality of fingers (16) of the first portion (12) is acoustically coupled to at least one of the fingers (18) of the second portion (14). In one embodiment the first portion (12) are interlaced with the fingers (18) of the second portion (14), thereby providing direct coupling. In another embodiment the acoustic coupling between the fingers of the first and second portions is provided indirectly by further portions (15) of the first metal layer (10).
摘要翻译：包括第一和第二金属层（10,20）和中间压电层（30）的体声波（BAW）谐振器装置，所述第一金属层（10）包括间隔开的第一和第二部分（12,14），其中所述第一和第二部分和第二部分（12,14）各自布置为多个互连的指状物（16,18），并且其中第一部分（12）的多个指状物（16）中的每一个声学耦合到至少一个第二部分（14）的手指（18）。在一个实施例中，第一部分（12）与第二部分（14）的指状物（18）交织，从而提供直接耦合。在另一个实施例中，第一和第二部分的指状物之间的声学耦合由第一金属层（10）的另外的部分（15）间接提供。

9. 发明申请

WO2006070305A1 BRIDGE TYPE SENSOR WITH TUNABLE CHARACTERISTIC 审中-公开
标题翻译：具有调节特性的桥式传感器
公开(公告)号：WO2006070305A1
公开(公告)日：2006-07-06
申请号：PCT/IB2005/054270
申请日：2005-12-15
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH , VAN ZON, Hans , RUIGROK, Jaap , VANHELMONT, Frederik, W., M. , SCHULZ-MEWES, Gunnar
发明人： VAN ZON, Hans , RUIGROK, Jaap , VANHELMONT, Frederik, W., M. , SCHULZ-MEWES, Gunnar
IPC分类号： G01R33/09
CPC分类号： G01R33/09
摘要： A bridge type magnetic sensor is disclosed having four resistive elements in a bridge arrangement, two of the resistive elements on opposing sides of the bridge having a magnetoresistive characteristic such that their resistance increases with increasing positive magnetic field and with increasing negative magnetic field. A frequency doubling is obtained because the output characteristic of the magnetic sensor is a V-shaped curve, where the signal rises for increasing positive and negative fields.
摘要翻译：公开了一种桥式磁传感器，其具有桥式布置中的四个电阻元件，桥的相对侧上的两个电阻元件具有磁阻特性，使得它们的电阻随着正磁场增加和负磁场增加而增加。由于磁传感器的输出特性是V形曲线，其中信号上升以增加正场和负场，因此获得倍频。

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