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1. 发明申请

WO2007072409A2 A MEMS RESONATOR, A METHOD OF MANUFACTURING THEREOF, AND A MEMS OSCILLATOR 审中-公开
标题翻译： MEMS谐振器，其制造方法以及MEMS振荡器
公开(公告)号：WO2007072409A2
公开(公告)日：2007-06-28
申请号：PCT/IB2006/054931
申请日：2006-12-18
申请人： NXP B.V. , VAN BEEK, Jozef, T., M. , LOEBL, Hans-Peter , VANHELMONT, Frederik, W., M.
发明人： VAN BEEK, Jozef, T., M. , LOEBL, Hans-Peter , VANHELMONT, Frederik, W., M.
IPC分类号： H03H9/02 , H03H3/007
CPC分类号： H03H9/02448 , H03H3/0072 , H03H9/2447 , H03H2009/02496 , Y10T29/42
摘要： The invention relates to a MEMS resonator comprising a movable element (48), the movable element (48) comprising a first part (A) having a first Young's modulus and a first temperature coefficient of the first Young's modulus, and the movable element (48) further comprising a second part (B) having a second Young's modulus and a second temperature coefficient of the second Young's modulus, a sign of the second temperature coefficient being opposite to a sign of the first temperature coefficient, at least, at operating conditions of the MEMS resonator, and a cross-sectional area of the first part (A) and the cross-sectional area of the second part (B) being such that the absolute temperature coefficient of the Young's modulus of the first part (A) multiplied by the cross-sectional area of the first part (A) does not deviate more than 20% from the absolute temperature coefficient of the Young's modulus of the second part (B) multiplied by the cross-sectional area of the second part (B), the cross-sectional areas being measured locally and perpendicularly to the movable element (48).
摘要翻译：本发明涉及一种包括可移动元件（48）的MEMS谐振器，可移动元件（48）包括具有第一杨氏模量和第一杨氏模量的第一温度系数的第一部分（A）并且所述可移动元件（48）还包括具有第二杨氏模量和第二杨氏模量的第二温度系数的第二部分（B），所述第二温度系数的符号与所述第一温度系数的符号相反至少在MEMS谐振器的操作条件下，第一部分（A）的横截面积和第二部分（B）的横截面积使得杨氏模量的绝对温度系数第一部分（A）乘以第一部分（A）的横截面积与第二部分（B）的杨氏模量的绝对温度系数乘以横截面积的偏差不超过20％的秒（B），所述横截面积局部地且垂直于所述可移动元件（48）测量。

2. 发明申请

WO2007036897A3 IMPROVEMENTS IN OR RELATING TO THIN-FILM BULK-ACOUSTIC WAVE (BAW) RESONATORS 审中-公开
公开(公告)号：WO2007036897A3
公开(公告)日：2007-04-05
申请号：PCT/IB2006/053534
申请日：2006-09-28
申请人： NXP B.V. , MILSON, Robert, F. , VANHELMONT, Frederik, W., M. , JANSMANN, Andreas, B., M. , RUIGROK, Jaap , LOEBL, Hans-Peter
发明人： MILSON, Robert, F. , VANHELMONT, Frederik, W., M. , JANSMANN, Andreas, B., M. , RUIGROK, Jaap , LOEBL, Hans-Peter
IPC分类号： H03H9/17 , H03H9/13
摘要： A thin-film bulk acoustic wave (BAW) resonator, such as SBAR or FBAR, for use in RF selectivity filters operating at frequencies of the order of 1 GHz. The BAW resonator comprises a piezoelectric layer (14) having first and second surfaces on opposing sides, a first electrode (16) extending over the first surface, and a second electrode (12) extending over the second surface, the extent of the area of overlap (R1 ) of the first and second electrodes determining the region of excitation of the fundamental thickness extensional (TE) mode of the resonator. The insertion loss to the resonator is reduced by providing a dielectric material (18) in the same layer as the first electrode (16) and surrounding that electrode. The material constituting the dielectric material (18) has a different mass, typically between 5% and 15 %, from the material comprising the first electrode (16) it surrounds. The mass of the dielectric material (18) can be lower or higher than the mass of the first electrode (16). Planarisation of the dielectric material (18) enhances the performance of the device.

3. 发明申请

WO2006126168A1 BULK ACOUSTIC WAVE RESONATOR DEVICE 审中-公开
标题翻译：大容量声波谐振器装置
公开(公告)号：WO2006126168A1
公开(公告)日：2006-11-30
申请号：PCT/IB2006/051653
申请日：2006-05-23
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH , MILSOM, Robert, F. , VANHELMONT, Frederik, W., M. , JANSMAN, Andreas, B., M. , RUIGROK, Jaap , LOEBL, Hans-Peter
发明人： MILSOM, Robert, F. , VANHELMONT, Frederik, W., M. , JANSMAN, Andreas, B., M. , RUIGROK, Jaap , LOEBL, Hans-Peter
IPC分类号： H03H9/17
CPC分类号： H03H9/02228 , H03H9/171 , H03H9/175
摘要： A bulk acoustic wave, BAW, resonator device comprising first and second metal layers (10, 20) and an intervening piezoelectric layer (30), the first metal layer (10) comprising spaced first and second portions (12 14), wherein the first and second portions (12, 14) are each arranged as a plurality of interconnected fingers (16, 18), and wherein each of the plurality of fingers (16) of the first portion (12) is acoustically coupled to at least one of the fingers (18) of the second portion (14). In one embodiment the first portion (12) are interlaced with the fingers (18) of the second portion (14), thereby providing direct coupling. In another embodiment the acoustic coupling between the fingers of the first and second portions is provided indirectly by further portions (15) of the first metal layer (10).
摘要翻译：包括第一和第二金属层（10,20）和中间压电层（30）的体声波（BAW）谐振器装置，所述第一金属层（10）包括间隔开的第一和第二部分（12,14），其中所述第一和第二部分和第二部分（12,14）各自布置为多个互连的指状物（16,18），并且其中第一部分（12）的多个指状物（16）中的每一个声学耦合到至少一个第二部分（14）的手指（18）。在一个实施例中，第一部分（12）与第二部分（14）的指状物（18）交织，从而提供直接耦合。在另一个实施例中，第一和第二部分的指状物之间的声学耦合由第一金属层（10）的另外的部分（15）间接提供。

4. 发明申请

WO2006070305A1 BRIDGE TYPE SENSOR WITH TUNABLE CHARACTERISTIC 审中-公开
标题翻译：具有调节特性的桥式传感器
公开(公告)号：WO2006070305A1
公开(公告)日：2006-07-06
申请号：PCT/IB2005/054270
申请日：2005-12-15
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH , VAN ZON, Hans , RUIGROK, Jaap , VANHELMONT, Frederik, W., M. , SCHULZ-MEWES, Gunnar
发明人： VAN ZON, Hans , RUIGROK, Jaap , VANHELMONT, Frederik, W., M. , SCHULZ-MEWES, Gunnar
IPC分类号： G01R33/09
CPC分类号： G01R33/09
摘要： A bridge type magnetic sensor is disclosed having four resistive elements in a bridge arrangement, two of the resistive elements on opposing sides of the bridge having a magnetoresistive characteristic such that their resistance increases with increasing positive magnetic field and with increasing negative magnetic field. A frequency doubling is obtained because the output characteristic of the magnetic sensor is a V-shaped curve, where the signal rises for increasing positive and negative fields.
摘要翻译：公开了一种桥式磁传感器，其具有桥式布置中的四个电阻元件，桥的相对侧上的两个电阻元件具有磁阻特性，使得它们的电阻随着正磁场增加和负磁场增加而增加。由于磁传感器的输出特性是V形曲线，其中信号上升以增加正场和负场，因此获得倍频。

5. 发明授权

EP1974465B1 A MEMS RESONATOR, A METHOD OF MANUFACTURING THEREOF, AND A MEMS OSCILLATOR 有权
标题翻译： MEMS谐振器，及其制造方法MEMS振荡器
公开(公告)号：EP1974465B1
公开(公告)日：2015-04-15
申请号：EP06842592.5
申请日：2006-12-18
申请人： NXP B.V.
发明人： VAN BEEK, Jozef, T., M. , LOEBL, Hans-Peter , VANHELMONT, Frederik, W., M.
IPC分类号： H03H9/02 , H03H3/007 , H03H9/24
CPC分类号： H03H9/02448 , H03H3/0072 , H03H9/2447 , H03H2009/02496 , Y10T29/42

6. 发明公开

EP1974465A2 A MEMS RESONATOR, A METHOD OF MANUFACTURING THEREOF, AND A MEMS OSCILLATOR 有权
标题翻译： MEMS谐振器，其制造方法以及MEMS振荡器
公开(公告)号：EP1974465A2
公开(公告)日：2008-10-01
申请号：EP06842592.5
申请日：2006-12-18
申请人： NXP B.V.
发明人： VAN BEEK, Jozef, T., M. , LOEBL, Hans-Peter , VANHELMONT, Frederik, W., M.
IPC分类号： H03H9/02 , H03H3/007 , H03H9/24
CPC分类号： H03H9/02448 , H03H3/0072 , H03H9/2447 , H03H2009/02496 , Y10T29/42
摘要： The invention relates to a MEMS resonator comprising a movable element (48), the movable element (48) comprising a first part (A) having a first Young's modulus and a first temperature coefficient of the first Young's modulus, and the movable element (48) further comprising a second part (B) having a second Young's modulus and a second temperature coefficient of the second Young's modulus, a sign of the second temperature coefficient being opposite to a sign of the first temperature coefficient, at least, at operating conditions of the MEMS resonator, and a cross-sectional area of the first part (A) and the cross-sectional area of the second part (B) being such that the absolute temperature coefficient of the Young's modulus of the first part (A) multiplied by the cross-sectional area of the first part (A) does not deviate more than 20% from the absolute temperature coefficient of the Young's modulus of the second part (B) multiplied by the cross-sectional area of the second part (B), the cross-sectional areas being measured locally and perpendicularly to the movable element (48).
摘要翻译：本发明涉及包括可移动元件（48）的MEMS谐振器，可移动元件（48）包括具有第一杨氏模量和第一杨氏模量的第一温度系数的第一部分（A），并且可移动元件（48 ）进一步包括具有第二杨氏模量和第二杨氏模量的第二温度系数的第二部分（B），第二温度系数的符号与第一温度系数的符号相反，至少在所述MEMS谐振器以及所述第一部分（A）的横截面积和所述第二部分（B）的横截面积使得所述第一部分（A）的杨氏模量的绝对温度系数乘以第一部分（A）的横截面积与第二部分（B）的杨氏模量的绝对温度系数乘以第二部分（B）的横截面积的偏差不超过20％，所述横截面积局部地且垂直于所述可移动元件（48）进行测量。

7. 发明公开

EP1935093A2 IMPROVEMENTS IN OR RELATING TO THIN-FILM BULK-ACOUSTIC WAVE (BAW) RESONATORS 审中-公开
标题翻译： IMPROVEMENTS或与薄膜体声波谐振器连接（BAW）
公开(公告)号：EP1935093A2
公开(公告)日：2008-06-25
申请号：EP06809429.1
申请日：2006-09-28
申请人： NXP B.V.
发明人： MILSON, Robert, F. , VANHELMONT, Frederik, W., M. , JANSMANN, Andreas, B., M. , RUIGROK, Jaap , LOEBL, Hans-Peter
IPC分类号： H03H9/17 , H03H9/13
CPC分类号： H03H9/02118 , H03H9/0211 , H03H9/174 , H03H9/175
摘要： A thin-film bulk acoustic wave (BAW) resonator, such as SBAR or FBAR, for use in RF selectivity filters operating at frequencies of the order of 1 GHz. The BAW resonator comprises a piezoelectric layer (14) having first and second surfaces on opposing sides, a first electrode (16) extending over the first surface, and a second electrode (12) extending over the second surface, the extent of the area of overlap (R1 ) of the first and second electrodes determining the region of excitation of the fundamental thickness extensional (TE) mode of the resonator. The insertion loss to the resonator is reduced by providing a dielectric material (18) in the same layer as the first electrode (16) and surrounding that electrode. The material constituting the dielectric material (18) has a different mass, typically between 5% and 15 %, from the material comprising the first electrode (16) it surrounds. The mass of the dielectric material (18) can be lower or higher than the mass of the first electrode (16). Planarisation of the dielectric material (18) enhances the performance of the device.

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