会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • A MEMS RESONATOR, A METHOD OF MANUFACTURING THEREOF, AND A MEMS OSCILLATOR
    • MEMS谐振器,其制造方法和MEMS振荡器
    • WO2007072409A3
    • 2007-10-18
    • PCT/IB2006054931
    • 2006-12-18
    • NXP BVVAN BEEK JOZEF T MLOEBL HANS-PETERVANHELMONT FREDERIK W M
    • VAN BEEK JOZEF T MLOEBL HANS-PETERVANHELMONT FREDERIK W M
    • H03H9/02H03H3/007H03H9/24
    • H03H9/02448H03H3/0072H03H9/2447H03H2009/02496Y10T29/42
    • The invention relates to a MEMS resonator comprising a movable element (48), the movable element (48) comprising a first part (A) having a first Young's modulus and a first temperature coefficient of the first Young's modulus, and the movable element (48) further comprising a second part (B) having a second Young's modulus and a second temperature coefficient of the second Young's modulus, a sign of the second temperature coefficient being opposite to a sign of the first temperature coefficient, at least, at operating conditions of the MEMS resonator, and a cross-sectional area of the first part (A) and the cross-sectional area of the second part (B) being such that the absolute temperature coefficient of the Young's modulus of the first part (A) multiplied by the cross-sectional area of the first part (A) does not deviate more than 20% from the absolute temperature coefficient of the Young's modulus of the second part (B) multiplied by the cross-sectional area of the second part (B), the cross-sectional areas being measured locally and perpendicularly to the movable element (48).
    • 本发明涉及一种包括可移动元件(48)的MEMS谐振器,所述可移动元件(48)包括具有第一杨氏模量和第一杨氏模量的第一温度系数的第一部分(A)和可移动元件(48) )还包括具有第二杨氏模量和第二杨氏模量的第二温度系数的第二部分(B),所述第二温度系数的符号与所述第一温度系数的符号相反,至少在 所述MEMS谐振器以及所述第一部分(A)的横截面面积和所述第二部分(B)的横截面面积使得所述第一部分(A)的杨氏模量的绝对温度系数乘以 第一部分(A)的横截面面积与第二部分(B)的杨氏模量的绝对温度系数乘以第二部分(B)的横截面积不相差大于20% 横截面面积被局部地和垂直于可移动元件(48)测量。
    • 2. 发明申请
    • IMPROVEMENTS IN OR RELATING TO THIN-FILM BULK-ACOUSTIC WAVE (BAW) RESONATORS
    • 或与薄膜大声波(BAW)谐振器相关的改进
    • WO2007036897A2
    • 2007-04-05
    • PCT/IB2006053534
    • 2006-09-28
    • KONINKL PHILIPS ELECTRONICS NVMILSON ROBERT FVANHELMONT FREDERIK W MJANSMANN ANDREAS B MRUIGROK JAAPLOEBL HANS-PETER
    • MILSON ROBERT FVANHELMONT FREDERIK W MJANSMANN ANDREAS B MRUIGROK JAAPLOEBL HANS-PETER
    • H03H9/17
    • H03H9/02118H03H9/0211H03H9/174H03H9/175
    • A thin-film bulk acoustic wave (BAW) resonator, such as SBAR or FBAR, for use in RF selectivity filters operating at frequencies of the order of 1 GHz. The BAW resonator comprises a piezoelectric layer (14) having first and second surfaces on opposing sides, a first electrode (16) extending over the first surface, and a second electrode (12) extending over the second surface, the extent of the area of overlap (R1 ) of the first and second electrodes determining the region of excitation of the fundamental thickness extensional (TE) mode of the resonator. The insertion loss to the resonator is reduced by providing a dielectric material (18) in the same layer as the first electrode (16) and surrounding that electrode. The material constituting the dielectric material (18) has a different mass, typically between 5% and 15 %, from the material comprising the first electrode (16) it surrounds. The mass of the dielectric material (18) can be lower or higher than the mass of the first electrode (16). Planarisation of the dielectric material (18) enhances the performance of the device.
    • 一种薄膜体声波(BAW)谐振器,例如SBAR或FBAR,用于在1 GHz频率工作的RF选择性滤波器。 BAW谐振器包括在相对侧上具有第一和第二表面的压电层(14),在第一表面上延伸的第一电极(16)和在第二表面上延伸的第二电极(12) 确定谐振器的基本厚度延伸(TE)模式的激励区域的第一和第二电极的重叠(R1)。 通过在与第一电极(16)相同的层中提供介电材料(18)并围绕该电极来减小谐振器的插入损耗。 构成电介质材料(18)的材料与其包围的第一电极(16)的材料具有不同的质量,通常在5%至15%之间。 电介质材料(18)的质量可以低于或高于第一电极(16)的质量。 介电材料(18)的平面化增强了器件的性能。