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    • 6. 发明授权
    • Method for fabricating an isolation structure
    • 隔离结构的制造方法
    • US08580653B2
    • 2013-11-12
    • US13775907
    • 2013-02-25
    • Tze-Liang LeePei-Ren JengChu-Yun FuChyi Shyuan ChernJui-Hei HuangChih-Tang PengHao-Ming Lien
    • Tze-Liang LeePei-Ren JengChu-Yun FuChyi Shyuan ChernJui-Hei HuangChih-Tang PengHao-Ming Lien
    • H01L21/76
    • H01L21/76224H01L21/76232
    • A method of fabricating an isolation structure including forming a trench in a top surface of a substrate and partially filling the trench with a first oxide, wherein the first oxide is a pure oxide. Partially filling the trench includes forming a liner layer in the trench and forming the first oxide over the liner layer using silane and oxygen precursors at a pressure less than 10 milliTorr (mTorr) and a temperature ranging from about 500° C. to about 1000° C. The method further includes producing a solid reaction product in a top portion of the first oxide. The method further includes sublimating the solid reaction product by heating the substrate in a chamber at a temperature from 100° C. to 200° C. and removing the sublimated solid reaction product by flowing a carrier gas over the substrate. The method further includes filling the trench with a second oxide.
    • 一种制造隔离结构的方法,包括在衬底的顶表面中形成沟槽并用第一氧化物部分地填充沟槽,其中第一氧化物是纯氧化物。 部分地填充沟槽包括在沟槽中形成衬层,并且在低于10毫托(mTorr)的压力和约500℃至约1000℃的温度下使用硅烷和氧前体在衬层上形成第一氧化物 该方法还包括在第一氧化物的顶部产生固体反应产物。 该方法还包括通过在室内在100℃至200℃的温度下加热基底来升华固体反应产物,并通过使载气流过基底而除去升华的固体反应产物。 该方法还包括用第二氧化物填充沟槽。