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1. 发明申请

US20130334034A1 ION BEAM DEVICE AND MACHINING METHOD 有权
标题翻译：离子束装置和加工方法
公开(公告)号：US20130334034A1
公开(公告)日：2013-12-19
申请号：US14002137
申请日：2012-01-13
申请人： Shinya Kitayama , Satoshi Tomimatsu , Tsuyoshi Onishi
发明人： Shinya Kitayama , Satoshi Tomimatsu , Tsuyoshi Onishi
IPC分类号： H01J37/317
CPC分类号： H01J37/317 , H01J37/20 , H01J37/222 , H01J2237/30466 , H01J2237/31745 , H01J2237/31749
摘要： Provided are a device and method capable of machining a machining target such as a sample, a probe, or a sample table without requiring a high degree of device operation skill. First, a shape generation process of determining a shape of a machining target on the basis of an ion beam scanning signal and an absorption current of the machining target is performed. Next, a machining pattern positioning process of positioning a machining pattern over an image of the machining target is performed. Further, an ion beam stopping process of stopping ion beam irradiation is performed from a result of comparison between the image of the machining target and the machining pattern while the machining target is machined through the ion beam irradiation.
摘要翻译：提供了能够加工诸如样品，探针或样品台之类的加工对象的装置和方法，而不需要高度的装置操作技能。首先，执行基于加工对象的离子束扫描信号和吸收电流来确定加工对象的形状的形状生成处理。接下来，执行将加工图案定位在加工对象的图像上的加工图案定位处理。此外，从加工对象的图像与加工图案的比较的结果，通过离子束照射加工加工对象，进行停止离子束照射的离子束停止处理。

2. 发明申请

US20130105302A1 CHARGED PARTICLE BEAM DEVICE AND SAMPLE PRODUCTION METHOD 审中-公开
标题翻译：充电颗粒光束装置和样品生产方法
公开(公告)号：US20130105302A1
公开(公告)日：2013-05-02
申请号：US13808261
申请日：2011-07-05
申请人： Terutaka Nanri , Tsuyoshi Onishi , Satoshi Tomimatsu
发明人： Terutaka Nanri , Tsuyoshi Onishi , Satoshi Tomimatsu
IPC分类号： C23F4/02
CPC分类号： C23F4/02 , G01N1/32 , G01N23/225 , H01J37/08 , H01J37/244 , H01J37/3002 , H01J37/3056 , H01J2237/31745
摘要： Provided is a technique capable of removing a damaged layer of a sample piece generated through an FIB fabrication sufficiently but at the minimum. A charged particle beam device includes a first element ion beam optical system unit (110) which performs a first FIB fabrication to form a sample piece from a sample, a second element ion beam optical system unit (120) which performs a second FIB fabrication to remove a damaged layer formed on a surface of the sample piece, and a first element detector (140) which detects an first element existing in the damaged layer. A termination of the second FIB fabrication is determined if an amount of the first element existing in the damaged layer becomes smaller than a predefined threshold value.
摘要翻译：提供了一种能够通过FIB制造而产生的样品片的损伤层除去至少最小的技术。带电粒子束装置包括：第一元件离子束光学系统单元，其执行第一FIB制造以从样品形成样品片;第二元件离子束光学系统单元，其执行第二FIB制造，去除形成在样品表面上的损伤层，以及检测存在于损伤层中的第一元素的第一元件检测器（140）。如果损伤层中存在的第一元素的量变得小于预定阈值，则确定第二FIB制造的终止。

3. 发明申请

US20120235055A1 Focused Ion Beam Device and Focused Ion Beam Processing Method 失效
标题翻译：聚焦离子束装置和聚焦离子束加工方法
公开(公告)号：US20120235055A1
公开(公告)日：2012-09-20
申请号：US13513256
申请日：2010-11-15
申请人： Yuichi Madokoro , Hirokazu Kaneoya , Tsuyoshi Onishi , Isamu Sekihara
发明人： Yuichi Madokoro , Hirokazu Kaneoya , Tsuyoshi Onishi , Isamu Sekihara
IPC分类号： H01J3/28
CPC分类号： G21K1/00 , H01J37/1478 , H01J37/3056 , H01J2237/0458 , H01J2237/31745
摘要： Disclosed is an operation for an optical system which achieves observation of focused ion beam processing equivalent to that in a case wherein a sample stage is tilted mechanically. In a focused ion beam optical system, an aperture, a tilting deflector, a beam scanner, and an objective lens are controlled so as to irradiate an ion beam tilted to the optical axis of the optical system, thereby achieving thin film processing and a cross section processing without accompanying adjustment and operation for a sample stage. The thin film processing and the cross section processing with a focused ion beam can be automated, and yield can be improved. For example, by applying the present invention to a cross section monitor to detect an end point, the cross section processing can be easily automated.
摘要翻译：公开了一种光学系统的操作，其实现了与样品台机械倾斜的情况相当的聚焦离子束处理的观察。在聚焦离子束光学系统中，控制孔径，倾斜偏转器，光束扫描器和物镜，以照射倾斜到光学系统的光轴的离子束，由此实现薄膜处理和交叉部分处理，而不需要对样品台进行调整和操作。利用聚焦离子束的薄膜处理和横截面加工可以自动化，并且可以提高收率。例如，通过将本发明应用于截面监视器来检测终点，可以容易地自动化横截面处理。

4. 发明申请

US20120187292A1 Charged Particle Beam Apparatus and Film Thickness Measurement Method 有权
标题翻译：带电粒子束和膜厚测量方法
公开(公告)号：US20120187292A1
公开(公告)日：2012-07-26
申请号：US13498994
申请日：2010-10-12
申请人： Satoshi Tomimatsu , Tsuyoshi Onishi , Toshihide Agemura , Terutaka Nanri
发明人： Satoshi Tomimatsu , Tsuyoshi Onishi , Toshihide Agemura , Terutaka Nanri
IPC分类号： H01J37/26
CPC分类号： H01J37/3005 , H01J37/244 , H01J37/28 , H01J37/3056 , H01J2237/24475 , H01J2237/24578 , H01J2237/3174
摘要： A charged particle beam apparatus of the present invention comprises a transmission electron detector (113; 206) having a detection portion divided into multiple regions (201 to 205; 301 to 305), wherein a film thickness of a sample is calculated by detecting a transmission electron beam (112) generated from the sample when the sample is irradiated with an electron beam (109), as a signal of each of the regions in accordance with scattering angles of the transmission electron beam, and thereafter calculating the intensities of the individual signals. According to the above, there is provided a charged particle beam apparatus capable of performing accurate film thickness monitoring while suppressing an error due to an external condition and also capable of processing a thin film sample into a sample having an accurate film thickness, which makes it possible to improve the accuracy in structure observations, element analyses and the like.
摘要翻译：本发明的带电粒子束装置包括具有分成多个区域（201〜205; 301〜305）的检测部的透射电子检测器（113; 206），其中通过检测透射率来计算样品的膜厚度当用电子束（109）照射样品时从样品产生的电子束（112）作为根据透射电子束的散射角的每个区域的信号，然后计算各个信号的强度。根据上述，提供了一种能够在抑制由于外部条件引起的误差的同时进行精确的膜厚度监测并且还能够将薄膜样品加工成具有精确膜厚度的样品的带电粒子束装置，这使得它可能提高结构观察，元素分析等方面的准确性。

5. 发明授权

US08610060B2 Charged particle beam device 有权
标题翻译：带电粒子束装置
公开(公告)号：US08610060B2
公开(公告)日：2013-12-17
申请号：US13202554
申请日：2009-10-23
申请人： Suyo Asai , Tsuyoshi Onishi , Toshihide Agemura
发明人： Suyo Asai , Tsuyoshi Onishi , Toshihide Agemura
IPC分类号： H01J37/31 , H01J37/00
CPC分类号： H01J37/244 , H01J37/265 , H01J37/28 , H01J2237/024 , H01J2237/24455 , H01J2237/24475
摘要： An object of the present invention is related to detecting of a detection signal at an optimum position in such a case that a sample plane is inclined with respect to a charged particle beam.The present invention is related to a charged particle beam apparatus for irradiating a charged particle beam to a sample, in which a detector is moved to a plurality of desirable positions around the sample so as to optimize positions of the detector. In accordance with the present invention, since it is possible to obtain an optimum detection signal in response to an attitude and a shape of the sample, a highly accurate sample observation, for instance, an SEM observation, an STEM observation, and an FIB observation can be carried out. Moreover, in an FIB-SEM apparatus, it is possible to highly accurately detect an end point of an FIB process.
摘要翻译：本发明的目的是在样品平面相对于带电粒子束倾斜的情况下，在最佳位置检测检测信号。本发明涉及一种用于将带电粒子束照射到样品的带电粒子束装置，其中检测器移动到样品周围的多个期望位置，以便优化检测器的位置。根据本发明，由于可以根据样品的姿态和形状获得最佳检测信号，所以可以进行高精度的样本观察，例如SEM观察，STEM观察和FIB观察可以进行此外，在FIB-SEM装置中，可以高精度地检测FIB处理的终点。

6. 发明申请

US20110297827A1 CHARGED PARTICLE BEAM DEVICE 有权
标题翻译：充电颗粒光束装置
公开(公告)号：US20110297827A1
公开(公告)日：2011-12-08
申请号：US13202554
申请日：2009-10-23
申请人： Suyo Asai , Tsuyoshi Onishi , Toshihide Agemura
发明人： Suyo Asai , Tsuyoshi Onishi , Toshihide Agemura
IPC分类号： G01N23/00 , H01J37/20
CPC分类号： H01J37/244 , H01J37/265 , H01J37/28 , H01J2237/024 , H01J2237/24455 , H01J2237/24475
摘要： An object of the present invention is related to detecting of a detection signal at an optimum position in such a case that a sample plane is inclined with respect to a charged particle beam.The present invention is related to a charged particle beam apparatus for irradiating a charged particle beam to a sample, in which a detector is moved to a plurality of desirable positions around the sample so as to optimize positions of the detector. In accordance with the present invention, since it is possible to obtain an optimum detection signal in response to an attitude and a shape of the sample, a highly accurate sample observation, for instance, an SEM observation, an STEM observation, and an FIB observation can be carried out. Moreover, in an FIB-SEM apparatus, it is possible to highly accurately detect an end point of an FIB process.
摘要翻译：本发明的目的是在样品平面相对于带电粒子束倾斜的情况下，在最佳位置检测检测信号。本发明涉及一种用于将带电粒子束照射到样品的带电粒子束装置，其中检测器移动到样品周围的多个期望位置，以便优化检测器的位置。根据本发明，由于可以根据样品的姿态和形状获得最佳检测信号，所以可以进行高精度的样本观察，例如SEM观察，STEM观察和FIB观察可以进行此外，在FIB-SEM装置中，可以高精度地检测FIB处理的终点。

7. 发明授权

US07058271B2 Plastic optical fiber 有权
标题翻译：塑料光纤
公开(公告)号：US07058271B2
公开(公告)日：2006-06-06
申请号：US11075441
申请日：2005-03-09
申请人： Yasuhiro Koike , Takaaki Ishigure , Hidenobu Murofushi , Yuji Watanabe , Tsuyoshi Onishi
发明人： Yasuhiro Koike , Takaaki Ishigure , Hidenobu Murofushi , Yuji Watanabe , Tsuyoshi Onishi
IPC分类号： G02B6/028
CPC分类号： G02B6/02038 , G02B6/03627
摘要： A plastic optical fiber low in attenuation in a high order mode and small in mode dispersion, is presented. The plastic optical fiber comprises at least a core and a clad surrounding the core, characterized in that the core has a refractive index which gradually decreases from the core center towards the outside in the radial direction of the plastic optical fiber, and the refractive index of the clad is lower than the refractive index of the core center and higher than the refractive index of the core periphery.
摘要翻译：提出了一种高阶模式衰减量小，模式色散小的塑料光纤。所述塑料光纤至少包括芯和围绕所述芯的包层，其特征在于，所述芯的折射率在塑料光纤的径向方向上从芯心中心向外逐渐减小，折射率包层低于芯心的折射率，高于芯周的折射率。

8. 发明授权

US10233548B2 Charged particle beam device and sample production method 有权
公开(公告)号：US10233548B2
公开(公告)日：2019-03-19
申请号：US13808261
申请日：2011-07-05
申请人： Terutaka Nanri , Tsuyoshi Onishi , Satoshi Tomimatsu
发明人： Terutaka Nanri , Tsuyoshi Onishi , Satoshi Tomimatsu
IPC分类号： C23C14/34 , C23F4/02 , H01J37/08 , G01N23/225 , H01J37/244 , G01N1/32 , H01J37/30 , H01J37/305
摘要： Provided is a technique capable of removing a damaged layer of a sample piece generated through an FIB fabrication sufficiently but at the minimum. A charged particle beam device includes a first element ion beam optical system unit (110) which performs a first FIB fabrication to form a sample piece from a sample, a second element ion beam optical system unit (120) which performs a second FIB fabrication to remove a damaged layer formed on a surface of the sample piece, and a first element detector (140) which detects an first element existing in the damaged layer. A termination of the second FIB fabrication is determined if an amount of the first element existing in the damaged layer becomes smaller than a predefined threshold value.

9. 发明授权

US09202672B2 Apparatus and method for probe shape processing by ion beam 有权
标题翻译：离子束探针形状处理装置及方法
公开(公告)号：US09202672B2
公开(公告)日：2015-12-01
申请号：US13641211
申请日：2011-04-12
申请人： Shinya Kitayama , Satoshi Tomimatsu , Tsuyoshi Onishi
发明人： Shinya Kitayama , Satoshi Tomimatsu , Tsuyoshi Onishi
IPC分类号： H01J37/31 , H01J37/305 , H01J37/304
CPC分类号： H01J37/3056 , H01J37/304 , H01J2237/208 , H01J2237/31745
摘要： There is provided an apparatus and a method capable of preparing a standardized probe without need for working skill of probe processing. According to the present invention, a probe shape generation process of detecting a probe shape based on the probe incoming current detected by a probe current detection unit, a probe tip coordinate extraction process of detecting a tip position of the probe from the probe shape, a probe contour line extraction process of generating a probe contour line obtained by approximating a contour of the probe from the tip position of the probe and the probe shape, a probe center line extraction process of generating a center line and a vertical line of the probe from the probe contour line, a processing pattern generation process of generating a processing pattern based on the probe tip position, the probe center line, the probe vertical line, and a preset shape and dimension of a probe acute part, and an ion beam termination process of performing, based on the processing pattern, termination of ion-beam processing are performed.
摘要翻译：提供了一种能够准备标准化探针而不需要探头处理工作技能的装置和方法。根据本发明，根据由探针电流检测单元检测到的探针入射电流来检测探针形状的探针形状生成处理，从探针形状检测探针的末端位置的探针尖端坐标提取处理，探针轮廓线提取处理，其生成通过从探针的尖端位置和探针形状近似探针的轮廓而获得的探针轮廓线;探针中心线提取处理，用于产生探针的中心线和垂直线探针轮廓线，基于探针尖端位置，探针中心线，探针垂直线以及探针尖锐部分的预设形状和尺寸产生处理图案的处理图案生成处理以及离子束终止处理基于处理模式执行离子束处理的终止。

10. 发明授权

US09111721B2 Ion beam device and machining method 有权
标题翻译：离子束装置和加工方法
公开(公告)号：US09111721B2
公开(公告)日：2015-08-18
申请号：US14002137
申请日：2012-01-13
申请人： Shinya Kitayama , Satoshi Tomimatsu , Tsuyoshi Onishi
发明人： Shinya Kitayama , Satoshi Tomimatsu , Tsuyoshi Onishi
IPC分类号： H01J37/20 , H01J37/317 , H01J37/22
CPC分类号： H01J37/317 , H01J37/20 , H01J37/222 , H01J2237/30466 , H01J2237/31745 , H01J2237/31749
摘要： Provided are a device and method capable of machining a machining target such as a sample, a probe, or a sample table without requiring a high degree of device operation skill. First, a shape generation process of determining a shape of a machining target on the basis of an ion beam scanning signal and an absorption current of the machining target is performed. Next, a machining pattern positioning process of positioning a machining pattern over an image of the machining target is performed. Further, an ion beam stopping process of stopping ion beam irradiation is performed from a result of comparison between the image of the machining target and the machining pattern while the machining target is machined through the ion beam irradiation.
摘要翻译：提供了能够加工诸如样品，探针或样品台之类的加工对象的装置和方法，而不需要高度的装置操作技能。首先，执行基于加工对象的离子束扫描信号和吸收电流来确定加工对象的形状的形状生成处理。接下来，执行将加工图案定位在加工对象的图像上的加工图案定位处理。此外，从加工对象的图像与加工图案的比较的结果，通过离子束照射加工加工对象，进行停止离子束照射的离子束停止处理。

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