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1. 发明申请

US20050227500A1 Method for producing material of electronic device 审中-公开
标题翻译：电子设备材料的制造方法
公开(公告)号：US20050227500A1
公开(公告)日：2005-10-13
申请号：US10509372
申请日：2003-03-31
申请人： Takuya Sugawara , Yoshihide Tada , Tomohiro Ohta
发明人： Takuya Sugawara , Yoshihide Tada , Tomohiro Ohta
IPC分类号： C23C16/511 , H01J37/32 , H01L21/02 , H01L21/316 , H01L21/336
CPC分类号： H01L21/02274 , C23C16/511 , H01J37/32192 , H01J37/3222 , H01L21/02164 , H01L21/0217 , H01L21/02172 , H01L21/31604 , H01L21/31662 , H01L21/31691 , H01L28/56
摘要： A film is formed on the surface of an electronic device substrate by using plasma based on microwave irradiation via a plane antenna member having a plurality of slits in the presence of a process gas comprising at least a gas containing a film-forming substance and a rare gas. An insulating film capable of forming an electronic device substrate with an insulating film having a good electrical property can be formed.
摘要翻译：在包含至少含有成膜物质的气体和罕见的气体的工艺气体的存在下，通过使用具有多个狭缝的平面天线构件，通过使用基于微波照射的等离子体，在电子器件基板的表面上形成膜加油站。可以形成能够形成具有良好电性能的绝缘膜的电子器件基板的绝缘膜。

2. 发明授权

US5552181A Method for supplying liquid material and process for forming thin films using the liquid material supplying method 失效
标题翻译：使用液体材料供给方法提供液体材料的方法和用于形成薄膜的工艺
公开(公告)号：US5552181A
公开(公告)日：1996-09-03
申请号：US170789
申请日：1993-12-21
申请人： Eiichi Kondoh , Toru Mitomo , Hiroshi Yamamoto , Tomohiro Ohta
发明人： Eiichi Kondoh , Toru Mitomo , Hiroshi Yamamoto , Tomohiro Ohta
IPC分类号： C23C16/20 , C23C16/448 , H01L21/205 , H01L21/31 , H01L21/3205 , H01L23/52 , C23C16/00
CPC分类号： C23C16/4482
摘要： A method of supplying, in a gaseous phase, a material which is in a viscous liquid phase at normal temperature. The viscous liquid material is provided in a bubbler and the pressure of the vessel is maintained below atmospheric pressure. A carrier gas is supplied through a nozzle opening in the liquid material inside the vessel. The carrier gas is temporarily dissolved in the liquid and then released to form fine bubbles into which the liquid material is vaporized, so that the vapor of the material is supplied together with the carrier gas.
摘要翻译：在气相中以常温下处于粘稠液相的材料的方法。将粘性液体材料设置在起泡器中，并将容器的压力保持在大气压以下。载气通过容器内的液体材料中的喷嘴开口供给。载气暂时溶解在液体中，然后释放，形成液体物质蒸发的微小气泡，使得材料的蒸气与载气一起供给。

3. 发明授权

US5532191A Method of chemical mechanical polishing planarization of an insulating film using an etching stop 失效
标题翻译：使用蚀刻停止层的绝缘膜的化学机械抛光平面化方法
公开(公告)号：US5532191A
公开(公告)日：1996-07-02
申请号：US216410
申请日：1994-03-23
申请人： Tadashi Nakano , Nobuyoshi Sato , Tomohiro Ohta , Hiroshi Yamamoto
发明人： Tadashi Nakano , Nobuyoshi Sato , Tomohiro Ohta , Hiroshi Yamamoto
IPC分类号： H01L21/3105
CPC分类号： H01L21/31053
摘要： A method of planarizing an insuating film includes the steps of preparing a semiconductor substrate; treating an uneven surface of the substrate with an organic solvent; forming an insulating film on the thus-treated surface of the substrate by a chemical vapor deposition using an organic silicon compound as a raw material or depositing SOG, forming an etching stop film having a chemical mechanical polishing etching speed slower than that of the insulating film by depositing silicon oxide or silicon oxynitride by performing a chemical vapor deposition using an inorganic silicon compound as a raw material; and etching back at least a part of the insulating film formed on the uneven surface of the substrate by a chemical mechanical polishing process using the etching stop film.
摘要翻译：平版化绝缘膜的方法包括制备半导体衬底的步骤; 用有机溶剂处理基板的不平坦表面; 通过使用有机硅化合物作为原料的化学气相沉积或沉积SOG在基板的这样处理的表面上形成绝缘膜，形成化学机械抛光蚀刻速度比绝缘膜慢的蚀刻停止膜通过使用无机硅化合物作为原料进行化学气相沉积来沉积氧化硅或氮氧化硅; 并且通过使用该蚀刻停止膜的化学机械抛光工艺来蚀刻形成在基板的不平坦表面上的绝缘膜的至少一部分。

4. 发明授权

US5308651A Photochemical vapor deposition process 失效
标题翻译：光化学气相沉积工艺
公开(公告)号：US5308651A
公开(公告)日：1994-05-03
申请号：US973058
申请日：1992-11-06
申请人： Tomohiro Ohta , Hiroaki Sasaki , Tohru Mitomo , Naoki Kubota
发明人： Tomohiro Ohta , Hiroaki Sasaki , Tohru Mitomo , Naoki Kubota
IPC分类号： C23C16/48 , H01L21/268 , B05D3/06
CPC分类号： H01L21/268 , C23C16/483
摘要： As to technical subject matters of attempting increase of deposition rate and improvement of film quality and removing restriction of light source and source gas in the photo CVD process, the promotion of photolysis of the source gas is achieved by use of a pulse laser beam together with a continuous light, application of plural laser beams wherein each pulse of at least one second pulse laser beam is irradiated into each interval between a pulse and the next pulse in a first lase beam, and further introduction of an additive gas in addition to the source gas into a reaction vessel and particularly the provision of photo CVD process advantageously adaptable for the production of semiconductor is realized.
摘要翻译：关于在光CVD法中试图提高沉积速率和提高膜质量以及去除光源和源气体的限制的技术主题，通过使用脉冲激光束和连续的光，应用多个激光束，其中至少一个第二脉冲激光束的每个脉冲被照射在第一激光束中的脉冲和下一个脉冲之间的每个间隔中，并且除了源之外还进一步引入添加气体气体进入反应容器，特别是提供有利于生产半导体的光CVD技术。

5. 发明授权

US5117916A Sprinkler head and operation monitor therefor 失效
标题翻译：喷头和操作监视器
公开(公告)号：US5117916A
公开(公告)日：1992-06-02
申请号：US682664
申请日：1991-04-09
申请人： Tomohiro Ohta , Takahiro Nakajima
发明人： Tomohiro Ohta , Takahiro Nakajima
IPC分类号： A62C37/10 , A62C37/21 , A62C37/50 , G08B17/02
CPC分类号： G08B17/02 , A62C37/10 , A62C37/21 , A62C37/50
摘要： A sprinkler head of the present invention comprises a cover plate which is operated to fall down at a temperature lower than the operating temperature of the sprinkler head body and a switching unit provided on the body side of the sprinkler head so as to detect the falling of the cover plate and send a fire detection signal.A sprinkler head comprises a switching unit provided on the side of the sprinkler head body so as to send a fire detection signal when the unit is operated at a temperature lower than the operating temperature of the sprinkler head and send a sprinkler head operation signal when it is returned to a non-operating state by detection of the firewater discharged by the operation of the sprinkler head after the fire detection signal has been sent.An operation monitor for the sprinkler head of the present invention decides that the sprinkler head is operated and indicates the operation when it receives a sprinkler head operation signal from a switching unit provided on the sprinkler head and a detection signal from a water flow detector provided on piping extending to the sprinkler head.The structure in which the sprinkler head also serves as a fire detector enables a reduction of the cost of fire extinguishing equipment and the simplification of the installation work thereof, as well as an improvement in the appearance. It is also possible to detect the discharge of water from the sprinkler head without giving false information.
摘要翻译：本发明的喷水头包括盖板，该盖板在比喷洒头主体的操作温度低的温度下操作，以及设置在喷头的主体侧的切换单元，以便检测喷洒头的下落盖板发送火灾探测信号。喷洒头包括设置在喷头主体一侧的开关单元，以便当该单元在比喷洒头的操作温度低的温度下操作时发送火情检测信号，并且当喷头在发送火灾检测信号之后，通过检测喷洒头的操作而排出的消防水，返回到非操作状态。本发明的喷洒头的操作监视器判定喷洒头被操作并且当接收到来自设置在喷洒头上的切换单元的喷洒头操作信号和来自设置在喷洒头上的水流检测器的检测信号时，指示操作管道延伸到喷头。喷淋头也用作火灾探测器的结构能够降低灭火设备的成本和简化其安装工作以及外观的改善。也可以在不给出虚假信息的情况下从喷头读出水分。

6. 发明授权

US07390830B1 Remedies or prophylactics for diseases in association with chemokines 失效
标题翻译：与趋化因子相关的疾病的补救措施或预防措施
公开(公告)号：US07390830B1
公开(公告)日：2008-06-24
申请号：US09959635
申请日：2000-05-18
申请人： Tatsuki Shiota , Fuminori Miyagi , Takashi Kamimura , Tomohiro Ohta , Yasuhiro Takano , Hideki Horiuchi
发明人： Tatsuki Shiota , Fuminori Miyagi , Takashi Kamimura , Tomohiro Ohta , Yasuhiro Takano , Hideki Horiuchi
IPC分类号： A61K31/40
CPC分类号： C07D223/12 , A61K31/40 , A61K31/401 , A61K31/4025 , A61K31/404 , A61K31/4155 , A61K31/4178 , A61K31/4184 , A61K31/4192 , A61K31/422 , A61K31/423 , A61K31/4245 , A61K31/427 , A61K31/429 , A61K31/433 , A61K31/435 , A61K31/4439 , A61K31/444 , A61K31/445 , A61K31/4468 , A61K31/4525 , A61K31/453 , A61K31/4535 , A61K31/454 , A61K31/4545 , A61K31/455 , A61K31/4709 , A61K31/506 , A61K31/53 , A61K31/5377 , A61K31/55 , C07D207/09 , C07D207/14 , C07D211/26 , C07D211/58
摘要： This invention provides remedies or prophylactics for diseases in association with chemokines such as MIP-1 α and/or MCP-1. Namely, remedies or prophylactics for diseases in association with the chemokines such as rheumatoid arthritis or nephritis contain, as the active ingredient, cyclic amine derivatives represented by the following formula (I), pharmaceutically acceptable acid addition salts thereof or pharmaceutically acceptable C1-C6 alkyl addition salts thereof.
摘要翻译：本发明提供了与趋化因子例如MIP-1α和/或MCP-1相关的疾病的补救措施或预防措施。即，与趋化因子如类风湿性关节炎或肾炎相关的疾病的补救措施或预防措施含有作为活性成分的由下式（I）表示的环胺衍生物，其药学上可接受的酸加成盐或药学上可接受的C < 其中C 1 -C 6烷基加成盐。

7. 发明授权

US6001736A Method of manufacturing semiconductor device and an apparatus for manufacturing the same 失效
标题翻译：半导体装置的制造方法及其制造装置
公开(公告)号：US6001736A
公开(公告)日：1999-12-14
申请号：US610341
申请日：1996-03-04
申请人： Eiichi Kondo , Nobuyuki Takeyasu , Tomohiro Ohta , Yumiko Kawano , Takeshi Kaizuka , Shinpei Jinnouchi
发明人： Eiichi Kondo , Nobuyuki Takeyasu , Tomohiro Ohta , Yumiko Kawano , Takeshi Kaizuka , Shinpei Jinnouchi
IPC分类号： H01L21/306 , H01L21/768 , H01L21/441
CPC分类号： H01L21/02068 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76877
摘要： An insulating layer is provided on a semiconductor substrate, a contact hole is formed in the insulating layer, and an underlying metal film is provided on a whole surface of the substrate including inner walls of the contact hole. A surface condition of the underlying metal film is adjusted by a hydrogen plasma treatment. By the hydrogen plasma treatment, a surface of the underlying metal film is hydrogenated and is sputter-etched, so that a disordered film and contaminants adsorbed on the surface of the underlying metal film are removed. Next, aluminum is deposited on the underlying metal film by a chemical vapor deposition process using an organic aluminum compound such as DMAH. The contact hole can be effectively filled with aluminum.
摘要翻译：绝缘层设置在半导体衬底上，在绝缘层中形成接触孔，并且在包括接触孔的内壁的衬底的整个表面上设置下面的金属膜。通过氢等离子体处理来调整底层金属膜的表面状态。通过氢等离子体处理，下面的金属膜的表面被氢化并进行溅射蚀刻，从而去除吸附在下面的金属膜的表面上的无序的膜和污染物。接下来，通过使用有机铝化合物如DMAH的化学气相沉积工艺将铝沉积在下面的金属膜上。接触孔可以有效地填充铝。

8. 发明授权

US5652180A Method of manufacturing semiconductor device with contact structure 失效
标题翻译：具有接触结构的半导体器件的制造方法
公开(公告)号：US5652180A
公开(公告)日：1997-07-29
申请号：US264928
申请日：1994-06-24
申请人： Hiroshi Shinriki , Hiroshi Yamamoto , Nobuyuki Takeyasu , Takayuki Komiya , Tomohiro Ohta
发明人： Hiroshi Shinriki , Hiroshi Yamamoto , Nobuyuki Takeyasu , Takayuki Komiya , Tomohiro Ohta
IPC分类号： H01L21/768 , H01L21/285
CPC分类号： H01L21/76879 , H01L2924/0002
摘要： A semiconductor device with a contact structure includes a silicon substrate, a diffusion region formed in a surface of the silicon substrate, a silicide film of high melting point metal deposited on the diffusion region, an insulating film formed on the silicon substrate, a contact hole formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film formed on the exposed surface of the silicide film at the bottom of the contact film, a plug formed in the contact hole by a selective Al CVD, and a metal wiring formed on the insulating film such that the metal wiring is electrically connected to the diffusion region by means of the plug, anti-diffusion film and silicide film. The anti-diffusion film may be formed by nitriding the surface of the silicide film.
摘要翻译：具有接触结构的半导体器件包括硅衬底，形成在硅衬底的表面中的扩散区，沉积在扩散区上的高熔点金属的硅化物膜，形成在硅衬底上的绝缘膜，接触孔形成在绝缘膜上，使得硅化物膜暴露在接触孔的底部，形成在接触膜底部的硅化物膜的暴露表面上的防扩散膜，通过接触孔形成的插塞选择性Al CVD，以及形成在绝缘膜上的金属布线，使得金属布线通过插塞，防扩散膜和硅化物膜电连接到扩散区。抗扩散膜可以通过氮化硅化物膜的表面而形成。

9. 发明授权

US5627102A Method for making metal interconnection with chlorine plasma etch 失效
标题翻译：用氯等离子体蚀刻制造金属互连的方法
公开(公告)号：US5627102A
公开(公告)日：1997-05-06
申请号：US569319
申请日：1995-12-08
申请人： Hiroshi Shinriki , Takeshi Kaizuka , Nobuyuki Takeyasu , Tomohiro Ohta , Eiichi Kondoh , Hiroshi Yamamoto , Tomoharu Katagiri , Tadashi Nakano , Yumiko Kawano
发明人： Hiroshi Shinriki , Takeshi Kaizuka , Nobuyuki Takeyasu , Tomohiro Ohta , Eiichi Kondoh , Hiroshi Yamamoto , Tomoharu Katagiri , Tadashi Nakano , Yumiko Kawano
IPC分类号： H01L21/285 , H01L21/3213 , H01L21/768 , H01L21/28
CPC分类号： H01L21/76838 , H01L21/28556 , H01L21/32136 , H01L21/76843 , H01L21/76856 , H01L21/76865 , H01L21/76877 , H01L23/53223 , H01L2924/0002
摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.
摘要翻译：通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，通过CVD在绝缘膜上形成TiN等下面的金属膜，形成连接孔的底壁和侧壁，形成金属互连在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。

10. 发明授权

US5521423A Dielectric structure for anti-fuse programming element 失效
标题翻译：反熔丝编程元件的介质结构
公开(公告)号：US5521423A
公开(公告)日：1996-05-28
申请号：US228257
申请日：1994-04-15
申请人： Hiroshi Shinriki , Takeshi Kaizuka , Tomohiro Ohta
发明人： Hiroshi Shinriki , Takeshi Kaizuka , Tomohiro Ohta
IPC分类号： H01L23/525 , H01L29/04 , H01L27/10 , H01L29/00
CPC分类号： H01L23/5252 , H01L2924/0002
摘要： An antifuse element suitable for use in FPGA. When a device is miniaturized to reduce the write voltage in an antifuse element and as the film thickness of the antifuse dielectric film is being reduced, the dielectric breakdown voltage is greatly variable due to the irregularity of the underlying metal. If the dielectric film is formed by a metal oxide having a relatively high specific permitivity without changing its parasitic capacity as compared to the prior art, the film thickness of the dielectric film can be increased in comparison with oxide and nitride films formed according to the prior art. The irregularity of the underlying metal can be reduced by coating it with a metal nitride or TiB film or TiC film. To equalize the dielectric breakdown voltage, another insulation film having a film thickness such that the direct tunnel conduction is dominant is formed below the metal oxide. To reduce the irregularity of the metal surface and to reduce the resistance after dielectric breakdown, an amorphous silicon layer is deposited before the metal oxide is deposited thereover to form a laminated film.
摘要翻译：适用于FPGA的反熔丝元件。当器件小型化以降低反熔丝元件中的写入电压时，并且由于反熔丝电介质膜的膜厚度正在减小，所以介电击穿电压由于下面的金属的不规则性而极大地变化。如果与现有技术相比，电介质膜由具有相对高的比容容的金属氧化物形成而不改变其寄生电容，则与根据现有技术形成的氧化物和氮化物膜相比，电介质膜的膜厚可以增加艺术。可以通过用金属氮化物或TiB膜或TiC膜涂覆来降低底层金属的不规则性。为了均衡绝缘击穿电压，具有膜厚度使得直接隧道导通为主的另一绝缘膜形成在金属氧化物的下面。为了减少金属表面的不规则性并且在介电击穿之后降低电阻，在将金属氧化物沉积在其之前形成非晶硅层以形成层压膜。

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