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1. 发明授权

US07037733B2 Method for measuring temperature, annealing method and method for fabricating semiconductor device 有权
标题翻译：测量温度的方法，退火方法和制造半导体器件的方法
公开(公告)号：US07037733B2
公开(公告)日：2006-05-02
申请号：US10343762
申请日：2002-07-01
申请人： Satoshi Shibata , Junji Hirase , Tatsuo Sugiyama , Emi Kanasaki , Fumitoshi Kawase , Yasushi Naito
发明人： Satoshi Shibata , Junji Hirase , Tatsuo Sugiyama , Emi Kanasaki , Fumitoshi Kawase , Yasushi Naito
IPC分类号： H01L21/66 , G01N25/00 , G01J5/00
CPC分类号： G01J5/0003
摘要： When the emissivity ε on the reverse face of a substrate 10 is measured during annealing processing for the substrate 10, films made from a material that varies the emissivity ε, such as a first DPS film 15 used for forming a plug 15A, a second DPS film 17 used for forming a capacitor lower electrode 17A and a third DPS film 20 used for forming a capacitor upper electrode 20A, are formed on the top face of the substrate 10. On the other hand, no film made from a material that varies the emissivity ε, such as a DPS film, is formed on the reverse face of the substrate 10.
摘要翻译：当在衬底10的退火处理期间测量衬底10的反面上的发射率ε时，由用于形成插头15A的第一DPS膜15，例如用于形成插头15A的第一DPS膜15的材料制成的膜，第二用于形成用于形成电容器上电极20A的电容器下电极17A和第三DPS膜20的DPS膜17形成在基板10的顶面上。另一方面，没有由材料制成的膜在基板10的背面上形成改变发射率ε（例如DPS膜）。

2. 发明授权

US5696008A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5696008A
公开(公告)日：1997-12-09
申请号：US668180
申请日：1996-06-21
申请人： Tokuhiko Tamaki , Tatsuo Sugiyama , Hiroaki Nakaoka
发明人： Tokuhiko Tamaki , Tatsuo Sugiyama , Hiroaki Nakaoka
IPC分类号： H01L21/8238 , H01L27/092 , H01L21/265 , H01L21/70
CPC分类号： H01L21/82385 , H01L21/823885 , H01L27/0922
摘要： On a semiconductor substrate made of p-type silicon, there are formed, in a successively layered fashion, a first p-type silicon semiconductor layer, laterally paired first n-type silicon semiconductor layers, laterally paired second p-type silicon semiconductor layers, and laterally paired n-type silicon semiconductor layers, by an epitaxial growth method. On the second n-type silicon semiconductor layer on the right side, there are successively formed a third p-type silicon semiconductor layer, a third n-type silicon semiconductor layer and a fourth p-type silicon semiconductor layer. The left first n-type silicon semiconductor layer, left second p-type silicon semiconductor layer and left second n-type silicon semiconductor layer form a first insular multilayered portion forming an n-channel MOSFET. The third p-type silicon semiconductor layer, third n-type silicon semiconductor layer and fourth p-type silicon semiconductor layer form a second insular portion forming a p-channel MOSFET. A first gate electrode is formed on a side surface of the left second p-type silicon semiconductor layer with a gate insulating film therebetween, and a second gate electrode is formed on a side surface of the right third n-type silicon semiconductor layer with a gate insulating film therebetween.
摘要翻译：在由p型硅制成的半导体衬底上，以连续分层的方式形成第一p型硅半导体层，横向配对的第一n型硅半导体层，横向配对的第二p型硅半导体层，和横向配对的n型硅半导体层，通过外延生长法。在右侧的第二n型硅半导体层上，依次形成第三p型硅半导体层，第三n型硅半导体层和第四p型硅半导体层。左第一n型硅半导体层，左第二p型硅半导体层和左第二n型硅半导体层形成形成n沟道MOSFET的第一岛状多层部分。第三p型硅半导体层，第三n型硅半导体层和第四p型硅半导体层形成形成p沟道MOSFET的第二岛形部分。第一栅电极形成在左第二p型硅半导体层的侧表面上，栅极绝缘膜之间，第二栅电极形成在右第三n型硅半导体层的侧表面上，栅绝缘膜。

3. 发明授权

US06605704B1 Plant-origin regulator protein and nucleic acid encoding the same 失效
标题翻译：植物来源的调节蛋白和核酸编码相同
公开(公告)号：US06605704B1
公开(公告)日：2003-08-12
申请号：US09308386
申请日：1999-07-21
申请人： Tatsuo Sugiyama , Hitoshi Sakakibara , Chika Ito , Megumi Suzuki
发明人： Tatsuo Sugiyama , Hitoshi Sakakibara , Chika Ito , Megumi Suzuki
IPC分类号： A61K3578
CPC分类号： C12N15/8295 , C07K14/415 , C12N15/8261 , Y02A40/146
摘要： A regulator protein of a two-component signal transduction system in plants and a nucleic acid coding therefor are disclosed. The present invention provided an isolated protein having the amino acid sequence shown in SEQ ID NO:1 in the Sequence Listing or an amino acid sequence having a homology of not less than 30% to the amino acid sequence shown in SEQ ID NO:1, which functions as a regulator protein in a plant, and a nucleic acid coding therefor.
摘要翻译：公开了植物中双组分信号转导系统的调节蛋白及其编码的核酸。本发明提供了具有序列表中SEQ ID NO：1所示的氨基酸序列或与SEQ ID NO：1所示的氨基酸序列具有不小于30％的同源性的氨基酸序列的分离蛋白质，其用作植物中的调节蛋白，和其编码的核酸。

4. 发明授权

US5780898A Semiconductor device with a vertical field effect transistor and method of manufacturing the same 失效
标题翻译：具有垂直场效应晶体管的半导体器件及其制造方法
公开(公告)号：US5780898A
公开(公告)日：1998-07-14
申请号：US856697
申请日：1997-05-15
申请人： Tokuhiko Tamaki , Tatsuo Sugiyama , Hiroaki Nakaoka
发明人： Tokuhiko Tamaki , Tatsuo Sugiyama , Hiroaki Nakaoka
IPC分类号： H01L21/8238 , H01L27/092 , H01L29/76 , H01L29/74 , H01L31/062
CPC分类号： H01L21/82385 , H01L21/823885 , H01L27/0922
摘要： On a semiconductor substrate made of p-type silicon, there are formed, in a successively layered fashion, a first p-type silicon semiconductor layer, laterally paired first n-type silicon semiconductor layers, laterally paired second p-type silicon semiconductor layers, and laterally paired n-type silicon semiconductor layers, by an epitaxial growth method. On the second n-type silicon semiconductor layer on the right side, there are successively formed a third p-type silicon semiconductor layer, a third n-type silicon semiconductor layer and a fourth p-type silicon semiconductor layer. The left first n-type silicon semiconductor layer, left second p-type silicon semiconductor layer and left second n-type silicon semiconductor layer form a first insular multilayered portion forming an n-channel MOSFET. The third p-type silicon semiconductor layer, third n-type silicon semiconductor layer and fourth p-type silicon semiconductor layer form a second insular portion forming a p-channel MOSFET. A first gate electrode is formed on a side surface of the left second p-type silicon semiconductor layer with a gate insulating film therebetween, and a second gate electrode is formed on a side surface of the right third n-type silicon semiconductor layer with a gate insulating film therebetween.
摘要翻译：在由p型硅制成的半导体衬底上，以连续分层的方式形成第一p型硅半导体层，横向配对的第一n型硅半导体层，横向配对的第二p型硅半导体层，和横向配对的n型硅半导体层，通过外延生长法。在右侧的第二n型硅半导体层上，依次形成第三p型硅半导体层，第三n型硅半导体层和第四p型硅半导体层。左第一n型硅半导体层，左第二p型硅半导体层和左第二n型硅半导体层形成形成n沟道MOSFET的第一岛状多层部分。第三p型硅半导体层，第三n型硅半导体层和第四p型硅半导体层形成形成p沟道MOSFET的第二岛形部分。第一栅电极形成在左第二p型硅半导体层的侧表面上，栅极绝缘膜之间，第二栅电极形成在右第三n型硅半导体层的侧表面上，栅绝缘膜。

5. 发明授权

US5753536A Semiconductor device and associated fabrication method 失效
标题翻译：半导体器件及相关制造方法
公开(公告)号：US5753536A
公开(公告)日：1998-05-19
申请号：US520252
申请日：1995-08-28
申请人： Tatsuo Sugiyama , Shuji Hirao , Kousaku Yano , Noboru Nomura
发明人： Tatsuo Sugiyama , Shuji Hirao , Kousaku Yano , Noboru Nomura
IPC分类号： H01L21/98 , H01L25/065 , H01L21/60
CPC分类号： H01L23/544 , H01L21/76898 , H01L24/05 , H01L24/12 , H01L24/16 , H01L24/80 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2223/54426 , H01L2224/0401 , H01L2224/05571 , H01L2224/08145 , H01L2224/13099 , H01L2224/80141 , H01L2224/80357 , H01L2224/80895 , H01L2224/80896 , H01L2224/81121 , H01L2224/81801 , H01L2224/81894 , H01L2224/83894 , H01L2224/9202 , H01L2225/06513 , H01L2225/06593 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3511
摘要： A first electrode and a first insulating layer of electrode insulation are formed on a first semiconductor substrate. A second electrode and a second insulating layer of electrode insulation are formed on a second semiconductor substrate. The first semiconductor substrate has at its surface a pattern of recesses/projections (i.e., a pattern of sawteeth in cross section) at regular intervals in stripe arrangement. Likewise, the second semiconductor substrate has at its surface a pattern of recesses/projections (i.e., a pattern of sawteeth in cross section) at regular intervals in stripe arrangement, wherein the pattern of the second semiconductor substrate has a phase shift of 180 degrees with respect to the pattern of the first semiconductor substrate. The first and second semiconductor substrates are bonded together with their patterns in engagement.
摘要翻译：在第一半导体衬底上形成有电极绝缘体的第一电极和第一绝缘层。在第二半导体衬底上形成第二电极和电极绝缘的第二绝缘层。第一半导体衬底在其表面上以条纹布置的规则间隔在其表面处具有凹槽/突起的图案（即横截面的锯齿形图案）。类似地，第二半导体衬底在其表面上在条纹布置中以规则的间隔在其表面处具有凹槽/突起的图案（即，横截面的锯齿形图案），其中第二半导体衬底的图案具有180度的相移，相对于第一半导体衬底的图案。第一和第二半导体衬底以它们的图案接合在一起。

6. 发明授权

US5750763A Process for production of thioaryl compound 失效
标题翻译：硫代芳基化合物的制备方法
公开(公告)号：US5750763A
公开(公告)日：1998-05-12
申请号：US532801
申请日：1995-11-08
申请人： Tatsuo Sugiyama , Tadashi Nakayama
发明人： Tatsuo Sugiyama , Tadashi Nakayama
IPC分类号： C07C319/06 , C07C319/14 , C07C319/20 , C07C321/24 , C07C321/26 , C07C323/20 , C07C323/22 , C07C323/33 , C07C323/34 , C07C323/37 , C07C323/39 , C07C323/52 , C07C321/28
CPC分类号： C07C319/14 , C07C319/06
摘要： The present invention provides: a process for producing an alkali metal salt of an arylmercaptan compound, represented by general formula (3): ##STR1## which process comprises reacting a disulfide compound represented by general formula: ##STR2## with a hydroxide of an alkali metal M.sup.1 in the presence of a sulfur compound represented by general formula (2): H.sub.(2-i) S(M.sup.1).sub.i (2) a process for producing an alkoxycarbonylalkylthioaryl compound represented by general formula (5): ##STR3## which process comprises reacting the above-mentioned alkalimetal salt of an arylmercaptan compound with a halogenofattyacid ester compound represented by general formula (4): X.sup.1 R.sup.2 COOR.sup.3 (4) at pH 7-10; and a process for producing the above-mentioned alkoxycarbonylalkylthioaryl compound, which process comprises reacting the above-mentioned disulfide compound with the above-mentioned hydroxide of an alkali metal M.sup.1 in the presence of the above-mentioned sulfur compound to obtain an alkali metal salt of an arylmercaptan compound, and reacting said alkali metal salt, without isolating it, with the above-mentioned halogenofatty acid ester compound under the same condition as mentioned above.
摘要翻译： PCT No.PCT / JP95 / 00455 Sec。 371日期：1995年11月8日 102（e）日期1995年11月8日PCT 1995年3月17日PCT公布。 WO95 / 25089 PCT公开日期1995年9月21日本发明提供一种由通式（3）表示的芳基硫醇化合物的碱金属盐的制造方法：在通式（3）表示的硫化合物的存在下，由通式：tal M1表示的二硫化物式（2）：H（2-i）S（M1）i（2）制备由通式（5）表示的烷氧基羰基烷基硫代芳基化合物的方法：该方法包括使上述碱金属盐的通式（4）表示的卤代酯酸酯化合物：X1R2COOR3（4），pH7-10的芳基硫醇化合物; 以及制备上述烷氧基羰基烷基硫代芳基化合物的方法，该方法包括使上述二硫化物与上述碱金属M1的氢氧化物在上述硫化合物的存在下反应，得到碱金属盐在与上述相同的条件下，使所述碱金属盐与上述卤代酯酸酯化合物分离而使其与所述碱金属盐反应。

7. 发明授权

US5739329A Process for producing hexahydropyridazine and hexahydropyridazine-1,2-dicarboxy derivative 失效
标题翻译：六氢哒嗪和六氢哒嗪-1,2-二羧基衍生物的制备方法
公开(公告)号：US5739329A
公开(公告)日：1998-04-14
申请号：US530185
申请日：1995-10-05
申请人： Tatsuo Sugiyama
发明人： Tatsuo Sugiyama
IPC分类号： C07D237/04
CPC分类号： C07D237/04
摘要： The present invention provides a process for producing a hexahydropyridazine-1,2-dicarboxy derivative represented by the general formula: ##STR1## wherein R.sup.1 and R.sup.2 represent each independently an alkyl group, by reacting a hydrazinedicarboxy derivative represented by the general formula: R.sup.1 OOC--NH--NH--COOR.sup.2 (1) wherein R.sup.1 and R.sup.2 have the same meaning as mentioned above, with a dihalogenobutane represented by the general formula: X.sup.1 --CH.sub. CH.sub.2 CH.sub.2 CH.sub.2 --X.sup.2 (2) wherein X.sup.1 and X.sup.2 represent each independently a halogen atom, in the presence of an alkali metal hydroxide, characterized in that the above reaction is effected in an aprotic polar solvent, and a process for producing a hexahydropyridazine, characterized by decarboxylating the thus obtained hexahydropyridazine-1,2-dicarboxy derivative (3) without isolation in the presence of an alkali metal hydroxide and a hydrogen-denoting compound.
摘要翻译： PCT No.PCT / JP95 / 00184 Sec。 371日期1995年10月5日第 102（e）日期1995年10月5日PCT 1995年2月10日提交PCT公布。公开号WO95 / 21828 日期：1995年8月17日本发明提供了通式（3）表示的六氢哒嗪-1,2-二羧基衍生物的制造方法，其中R1和R2各自独立地表示烷基，通过使肼基二羧基衍生物由以下通式表示的R1OOC-NH-NH-COOR2（1）其中R1和R2具有与上述相同的含义，与由以下通式表示的二卤代丁烷：X1-CHCH2CH2CH2-X2（2）其中X1和X2表示各自独立地是卤素原子，在碱金属氢氧化物的存在下，其特征在于上述反应在非质子极性溶剂中进行，和制备六氢哒嗪的方法，其特征在于如此得到的六氢哒嗪-1,2-二羧基衍生物（3），在碱金属氢氧化物和氢表示化合物存在下不分离。

8. 发明授权

US5723909A Semiconductor device and associated fabrication method 失效
标题翻译：半导体器件及相关制造方法
公开(公告)号：US5723909A
公开(公告)日：1998-03-03
申请号：US712237
申请日：1996-09-11
申请人： Kousaku Yano , Tatsuo Sugiyama , Satoshi Ueda , Noboru Nomura
发明人： Kousaku Yano , Tatsuo Sugiyama , Satoshi Ueda , Noboru Nomura
IPC分类号： H01L21/205 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01L23/58
CPC分类号： H01L23/5329 , H01L21/76801 , H01L21/76826 , H01L21/76832 , H01L21/76834 , H01L2924/0002
摘要： A first metallization layer is locally formed on the surface of a semiconductor substrate thereby leaving portions of the semiconductor substrate's surface exposed. A first silicon oxide layer is then formed in such a manner that it covers the exposed portions of the semiconductor substrate's surface and the first metallization layer. This is followed by the formation of an HMDS molecular layer on the first silicon oxide layer. Then, a second silicon oxide is formed on the molecular layer by means of a CVD process utilizing the chemical reaction of ozone with TEOS. Finally, a second metallization layer is locally formed on the second silicon oxide layer.
摘要翻译：第一金属化层局部地形成在半导体衬底的表面上，从而使半导体衬底表面的部分露出。然后以这样的方式形成第一氧化硅层，使得其覆盖半导体衬底的表面和第一金属化层的暴露部分。随后在第一氧化硅层上形成HMDS分子层。然后，通过使用臭氧与TEOS的化学反应的CVD工艺在分子层上形成第二氧化硅。最后，第二金属化层局部形成在第二氧化硅层上。

9. 发明授权

US5678481A Method of screen printing a pattern on an edge of a glass substrate 失效
标题翻译：在玻璃基板的边缘上丝网印刷图案的方法
公开(公告)号：US5678481A
公开(公告)日：1997-10-21
申请号：US493129
申请日：1995-06-21
申请人： Akinori Matsumoto , Tatsuo Sugiyama
发明人： Akinori Matsumoto , Tatsuo Sugiyama
IPC分类号： B41F15/08 , B41M1/12 , B41F15/36 , B41L13/12 , B41N1/24
CPC分类号： B41M1/12 , B41F15/0813
摘要： A print pattern is formed on a glass plate 1 by using a screen plate in which a second ink-permeable region 7 having a lower ink-permeating rate than a first ink-permeable region 4 is formed in a screen region which corresponds to a space between the flat edge portion of the first ink-permeable region 4 and the outer end portion of the glass plate 1, whereby the formation of a locally raised portion in the film formed by printing at its end portion is avoided, and a decorative print is formed by a simple method without leaving a space in a flat end portion of the glass plate.
摘要翻译：在玻璃板1上通过使用丝网板形成印刷图案，其中在相当于空间的屏幕区域中形成了具有比第一墨水可渗透区域4低的墨水渗透速率的第二墨水可渗透区域7 在第一透墨区域4的平坦边缘部分和玻璃板1的外端部之间，避免了在其端部通过印刷形成的膜中的局部凸起部分的形成，并且装饰性印刷品通过简单的方法形成，而不在玻璃板的平坦端部处留下空间。

10. 发明授权

US5210303A Process for producing benzylamines 失效
标题翻译：生产苯甲酸的方法
公开(公告)号：US5210303A
公开(公告)日：1993-05-11
申请号：US686932
申请日：1991-04-18
申请人： Tatsuo Sugiyama
发明人： Tatsuo Sugiyama
IPC分类号： C07C209/08 , C07C211/27 , C07C211/29
CPC分类号： C07C209/08
摘要： A process for producing a benzylamine which comprises reacting a benzyl halide with an aqueous ammonia solution in the presence of an aromatic aldehyde represented by the formula: ##STR1## wherein R represents a hydrogen atom, a halogen atom or a lower alkyl group, and n is 1 or 2, separating an oily substance from the reaction mixture, and treating the oily substance with a mineral acid.

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