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1. 发明授权

US5753536A Semiconductor device and associated fabrication method 失效
标题翻译：半导体器件及相关制造方法
公开(公告)号：US5753536A
公开(公告)日：1998-05-19
申请号：US520252
申请日：1995-08-28
申请人： Tatsuo Sugiyama , Shuji Hirao , Kousaku Yano , Noboru Nomura
发明人： Tatsuo Sugiyama , Shuji Hirao , Kousaku Yano , Noboru Nomura
IPC分类号： H01L21/98 , H01L25/065 , H01L21/60
CPC分类号： H01L23/544 , H01L21/76898 , H01L24/05 , H01L24/12 , H01L24/16 , H01L24/80 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2223/54426 , H01L2224/0401 , H01L2224/05571 , H01L2224/08145 , H01L2224/13099 , H01L2224/80141 , H01L2224/80357 , H01L2224/80895 , H01L2224/80896 , H01L2224/81121 , H01L2224/81801 , H01L2224/81894 , H01L2224/83894 , H01L2224/9202 , H01L2225/06513 , H01L2225/06593 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3511
摘要： A first electrode and a first insulating layer of electrode insulation are formed on a first semiconductor substrate. A second electrode and a second insulating layer of electrode insulation are formed on a second semiconductor substrate. The first semiconductor substrate has at its surface a pattern of recesses/projections (i.e., a pattern of sawteeth in cross section) at regular intervals in stripe arrangement. Likewise, the second semiconductor substrate has at its surface a pattern of recesses/projections (i.e., a pattern of sawteeth in cross section) at regular intervals in stripe arrangement, wherein the pattern of the second semiconductor substrate has a phase shift of 180 degrees with respect to the pattern of the first semiconductor substrate. The first and second semiconductor substrates are bonded together with their patterns in engagement.
摘要翻译：在第一半导体衬底上形成有电极绝缘体的第一电极和第一绝缘层。在第二半导体衬底上形成第二电极和电极绝缘的第二绝缘层。第一半导体衬底在其表面上以条纹布置的规则间隔在其表面处具有凹槽/突起的图案（即横截面的锯齿形图案）。类似地，第二半导体衬底在其表面上在条纹布置中以规则的间隔在其表面处具有凹槽/突起的图案（即，横截面的锯齿形图案），其中第二半导体衬底的图案具有180度的相移，相对于第一半导体衬底的图案。第一和第二半导体衬底以它们的图案接合在一起。

2. 发明授权

US5723909A Semiconductor device and associated fabrication method 失效
标题翻译：半导体器件及相关制造方法
公开(公告)号：US5723909A
公开(公告)日：1998-03-03
申请号：US712237
申请日：1996-09-11
申请人： Kousaku Yano , Tatsuo Sugiyama , Satoshi Ueda , Noboru Nomura
发明人： Kousaku Yano , Tatsuo Sugiyama , Satoshi Ueda , Noboru Nomura
IPC分类号： H01L21/205 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01L23/58
CPC分类号： H01L23/5329 , H01L21/76801 , H01L21/76826 , H01L21/76832 , H01L21/76834 , H01L2924/0002
摘要： A first metallization layer is locally formed on the surface of a semiconductor substrate thereby leaving portions of the semiconductor substrate's surface exposed. A first silicon oxide layer is then formed in such a manner that it covers the exposed portions of the semiconductor substrate's surface and the first metallization layer. This is followed by the formation of an HMDS molecular layer on the first silicon oxide layer. Then, a second silicon oxide is formed on the molecular layer by means of a CVD process utilizing the chemical reaction of ozone with TEOS. Finally, a second metallization layer is locally formed on the second silicon oxide layer.
摘要翻译：第一金属化层局部地形成在半导体衬底的表面上，从而使半导体衬底表面的部分露出。然后以这样的方式形成第一氧化硅层，使得其覆盖半导体衬底的表面和第一金属化层的暴露部分。随后在第一氧化硅层上形成HMDS分子层。然后，通过使用臭氧与TEOS的化学反应的CVD工艺在分子层上形成第二氧化硅。最后，第二金属化层局部形成在第二氧化硅层上。

3. 发明授权

US5950101A Method for manufacturing a semiconductor device involving forming two silicon oxide layers by CVD and forming HMDS between the silicon oxide layers 失效
标题翻译：制造半导体器件的方法，包括通过CVD形成两个氧化硅层并在氧化硅层之间形成HMDS
公开(公告)号：US5950101A
公开(公告)日：1999-09-07
申请号：US888919
申请日：1997-07-07
申请人： Kousaka Yano , Tatsuo Sugiyama , Satoshi Ueda , Noboru Nomura
发明人： Kousaka Yano , Tatsuo Sugiyama , Satoshi Ueda , Noboru Nomura
IPC分类号： H01L21/205 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/469
CPC分类号： H01L23/5329 , H01L21/76801 , H01L21/76826 , H01L21/76832 , H01L21/76834 , H01L2924/0002
摘要： A first metallization layer is locally formed on the surface of a semiconductor substrate thereby leaving portions of the semiconductor substrate's surface exposed. A first silicon oxide layer is then formed in such a manner that it covers the exposed portions of the semiconductor substrate's surface and the first metallization layer. This is followed by the formation of an HMDS molecular layer on the first silicon oxide layer. Then, a second silicon oxide is formed on the molecular layer by means of a CVD process utilizing the chemical reaction of ozone with TEOS. Finally, a second metallization layer is locally formed on the second silicon oxide layer.
摘要翻译：第一金属化层局部地形成在半导体衬底的表面上，从而使半导体衬底表面的部分露出。然后以这样的方式形成第一氧化硅层，使得其覆盖半导体衬底的表面和第一金属化层的暴露部分。随后在第一氧化硅层上形成HMDS分子层。然后，通过使用臭氧与TEOS的化学反应的CVD工艺在分子层上形成第二氧化硅。最后，第二金属化层局部形成在第二氧化硅层上。

4. 发明授权

US07037733B2 Method for measuring temperature, annealing method and method for fabricating semiconductor device 有权
标题翻译：测量温度的方法，退火方法和制造半导体器件的方法
公开(公告)号：US07037733B2
公开(公告)日：2006-05-02
申请号：US10343762
申请日：2002-07-01
申请人： Satoshi Shibata , Junji Hirase , Tatsuo Sugiyama , Emi Kanasaki , Fumitoshi Kawase , Yasushi Naito
发明人： Satoshi Shibata , Junji Hirase , Tatsuo Sugiyama , Emi Kanasaki , Fumitoshi Kawase , Yasushi Naito
IPC分类号： H01L21/66 , G01N25/00 , G01J5/00
CPC分类号： G01J5/0003
摘要： When the emissivity ε on the reverse face of a substrate 10 is measured during annealing processing for the substrate 10, films made from a material that varies the emissivity ε, such as a first DPS film 15 used for forming a plug 15A, a second DPS film 17 used for forming a capacitor lower electrode 17A and a third DPS film 20 used for forming a capacitor upper electrode 20A, are formed on the top face of the substrate 10. On the other hand, no film made from a material that varies the emissivity ε, such as a DPS film, is formed on the reverse face of the substrate 10.
摘要翻译：当在衬底10的退火处理期间测量衬底10的反面上的发射率ε时，由用于形成插头15A的第一DPS膜15，例如用于形成插头15A的第一DPS膜15的材料制成的膜，第二用于形成用于形成电容器上电极20A的电容器下电极17A和第三DPS膜20的DPS膜17形成在基板10的顶面上。另一方面，没有由材料制成的膜在基板10的背面上形成改变发射率ε（例如DPS膜）。

5. 发明授权

US5696008A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5696008A
公开(公告)日：1997-12-09
申请号：US668180
申请日：1996-06-21
申请人： Tokuhiko Tamaki , Tatsuo Sugiyama , Hiroaki Nakaoka
发明人： Tokuhiko Tamaki , Tatsuo Sugiyama , Hiroaki Nakaoka
IPC分类号： H01L21/8238 , H01L27/092 , H01L21/265 , H01L21/70
CPC分类号： H01L21/82385 , H01L21/823885 , H01L27/0922
摘要： On a semiconductor substrate made of p-type silicon, there are formed, in a successively layered fashion, a first p-type silicon semiconductor layer, laterally paired first n-type silicon semiconductor layers, laterally paired second p-type silicon semiconductor layers, and laterally paired n-type silicon semiconductor layers, by an epitaxial growth method. On the second n-type silicon semiconductor layer on the right side, there are successively formed a third p-type silicon semiconductor layer, a third n-type silicon semiconductor layer and a fourth p-type silicon semiconductor layer. The left first n-type silicon semiconductor layer, left second p-type silicon semiconductor layer and left second n-type silicon semiconductor layer form a first insular multilayered portion forming an n-channel MOSFET. The third p-type silicon semiconductor layer, third n-type silicon semiconductor layer and fourth p-type silicon semiconductor layer form a second insular portion forming a p-channel MOSFET. A first gate electrode is formed on a side surface of the left second p-type silicon semiconductor layer with a gate insulating film therebetween, and a second gate electrode is formed on a side surface of the right third n-type silicon semiconductor layer with a gate insulating film therebetween.
摘要翻译：在由p型硅制成的半导体衬底上，以连续分层的方式形成第一p型硅半导体层，横向配对的第一n型硅半导体层，横向配对的第二p型硅半导体层，和横向配对的n型硅半导体层，通过外延生长法。在右侧的第二n型硅半导体层上，依次形成第三p型硅半导体层，第三n型硅半导体层和第四p型硅半导体层。左第一n型硅半导体层，左第二p型硅半导体层和左第二n型硅半导体层形成形成n沟道MOSFET的第一岛状多层部分。第三p型硅半导体层，第三n型硅半导体层和第四p型硅半导体层形成形成p沟道MOSFET的第二岛形部分。第一栅电极形成在左第二p型硅半导体层的侧表面上，栅极绝缘膜之间，第二栅电极形成在右第三n型硅半导体层的侧表面上，栅绝缘膜。

6. 发明授权

US06893760B2 Solid oxide fuel cell 失效
公开(公告)号：US06893760B2
公开(公告)日：2005-05-17
申请号：US10046918
申请日：2002-01-17
申请人： Itaru Shibata , Tatsuo Sugiyama , Masaharu Hatano , Mitsugu Yamanaka , Makoto Uchiyama , Tatsuhiro Fukuzawa , Naoki Hara , Keiko Kushibiki , Fuminori Satou
发明人： Itaru Shibata , Tatsuo Sugiyama , Masaharu Hatano , Mitsugu Yamanaka , Makoto Uchiyama , Tatsuhiro Fukuzawa , Naoki Hara , Keiko Kushibiki , Fuminori Satou
IPC分类号： H01M4/86 , H01M4/88 , H01M8/02 , H01M8/12 , H01M8/24
CPC分类号： H01M4/8657 , H01M4/8642 , H01M8/1213 , H01M8/2425 , H01M8/2432 , H01M8/249 , H01M2008/1293 , Y02P70/56
摘要： A single cell for a fuel cell in which an air electrode or a fuel electrode includes at least two layers. The air electrode includes an adhering cathode layer formed on one surface of the solid electrolyte layer and configured to show a function to allow the air electrode and the solid electrolyte layer to adhere electrically and mechanically to each other, and an electricity collecting cathode layer formed on the adhering cathode layer and configured to show an electricity collecting function of the air electrode. Alternatively, the fuel electrode includes an adhering anode layer formed on the other surface of the solid electrolyte layer and configured to show a function to allow the fuel electrode and the solid electrolyte layer to adhere electrically and mechanically to each other, and an electricity collecting anode layer formed on the adhering anode layer and configured to show an electricity collecting function.

7. 发明授权

US6100170A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US6100170A
公开(公告)日：2000-08-08
申请号：US110942
申请日：1998-07-07
申请人： Michikazu Matsumoto , Tatsuo Sugiyama , Shinichi Ogawa , Masato Kanazawa , Kouji Tamura , Masahiro Yasumi
发明人： Michikazu Matsumoto , Tatsuo Sugiyama , Shinichi Ogawa , Masato Kanazawa , Kouji Tamura , Masahiro Yasumi
IPC分类号： H01L21/28 , H01L21/285 , H01L21/336 , H01L21/425 , H01L21/3205
CPC分类号： H01L29/665 , H01L21/28052 , H01L21/28512 , H01L21/28518
摘要： After forming a polysilicon film to be used as a gate electrode on a semiconductor substrate of silicon, an insulating thin film is deposited on the polysilicon film. Impurity ions are implanted into the polysilicon film through the insulating thin film, so as to form an amorphous layer on the surface of the polysilicon film. After removing the insulating thin film existing on the polysilicon film, a metal film is deposited on the amorphous layer. A reaction is caused between the amorphous layer and the metal film through annealing, so as to form a metal silicide layer on the surface of the polysilicon film.
摘要翻译：在硅的半导体衬底上形成用作栅电极的多晶硅膜之后，在多晶硅膜上沉积绝缘薄膜。通过绝缘薄膜将杂质离子注入到多晶硅膜中，以在多晶硅膜的表面上形成非晶层。在去除存在于多晶硅膜上的绝缘薄膜之后，在非晶层上沉积金属膜。通过退火在非晶层与金属膜之间产生反应，从而在多晶硅膜的表面上形成金属硅化物层。

8. 发明授权

US5144499A Optical shaped article for CRT and having particular spectral transmittance characteristics 失效
标题翻译：用于CRT和具有特殊光谱传输特性的光学形状
公开(公告)号：US5144499A
公开(公告)日：1992-09-01
申请号：US733802
申请日：1991-07-22
申请人： Seiichi Kawanami , Tatsuo Sugiyama , Yoshiro Suzuki , Yasutaro Ito , Yuji Annaka
发明人： Seiichi Kawanami , Tatsuo Sugiyama , Yoshiro Suzuki , Yasutaro Ito , Yuji Annaka
IPC分类号： G02B5/20 , G02B1/04 , G02B5/22 , G02B13/16 , H04N9/31
CPC分类号： H04N9/31 , G02B13/16 , G02B5/223
摘要： Provided are optical shaped articles for CRT, such as projection lens and filter used for the CRT's of projection TV's, which comprise a transparent synthetic resin containing a red dyestuff or a combination of a green organic pigment and a yellow dyestuff and having specified spectral transmittance characteristics.

9. 发明授权

US07326484B2 Solid oxide fuel cell 失效
标题翻译：固体氧化物燃料电池
公开(公告)号：US07326484B2
公开(公告)日：2008-02-05
申请号：US11088892
申请日：2005-03-25
申请人： Itaru Shibata , Tatsuo Sugiyama , Masaharu Hatano , Mitsugu Yamanaka , Makoto Uchiyama , Tatsuhiro Fukuzawa , Naoki Hara , Keiko Kushibiki , Fuminori Satou
发明人： Itaru Shibata , Tatsuo Sugiyama , Masaharu Hatano , Mitsugu Yamanaka , Makoto Uchiyama , Tatsuhiro Fukuzawa , Naoki Hara , Keiko Kushibiki , Fuminori Satou
IPC分类号： H01M8/10 , H01M8/24 , H01M4/86
CPC分类号： H01M4/8657 , H01M4/8642 , H01M8/1213 , H01M8/2425 , H01M8/2432 , H01M8/249 , H01M2008/1293 , Y02P70/56
摘要： A single cell for a fuel cell in which an air electrode or a fuel electrode includes at least two layers. The air electrode includes an adhering cathode layer formed on one surface of the solid electrolyte layer and configured to show a function to allow the air electrode and the solid electrolyte layer to adhere electrically and mechanically to each other, and an electricity collecting cathode layer formed on the adhering cathode layer and configured to show an electricity collecting function of the air electrode. Alternatively, the fuel electrode includes an adhering anode layer formed on the other surface of the solid electrolyte layer and configured to show a function to allow the fuel electrode and the solid electrolyte layer to adhere electrically and mechanically to each other, and an electricity collecting anode layer formed on the adhering anode layer and configured to show an electricity collecting function.
摘要翻译：用于燃料电池的单电池，其中空气电极或燃料电极包括至少两层。空气电极包括形成在固体电解质层的一个表面上的粘附阴极层，并且被配置为显示使空气电极和固体电解质层彼此电和机械地粘附的功能，以及形成在粘附阴极层并且被配置为显示空气电极的集电功能。或者，燃料电极包括形成在固体电解质层的另一个表面上的粘附阳极层，并且被配置为具有允许燃料电极和固体电解质层彼此电和机械粘合的功能，并且集电阳极层，其形成在粘附阳极层上并且被配置为显示集电功能。

10. 发明授权

US06803140B2 Gallate based complex oxide electrolyte material 失效
标题翻译：基于镓酸盐的复合氧化物电解质材料
公开(公告)号：US06803140B2
公开(公告)日：2004-10-12
申请号：US09939577
申请日：2001-08-28
申请人： Tatsuo Sugiyama , Kazuo Matsuo , Fumio Munakata , Yoshio Akimune
发明人： Tatsuo Sugiyama , Kazuo Matsuo , Fumio Munakata , Yoshio Akimune
IPC分类号： H01M810
CPC分类号： C04B35/01 , C01G15/00 , C01G15/006 , C04B35/50 , C04B35/505 , H01M8/1246 , Y02E60/525 , Y02P70/56
摘要： A solid electrolyte material contains an A site-deficient complex oxide represented by a chemical formula A1-&agr;BO3-&dgr;, in which a B site contains at least Ga. This solid electrolyte material has stability, high oxide-ion conductivity at low temperature and high toughness. A method of manufacturing the solid electrolyte material, comprises: mixing oxide materials of respective constituent elements; baking temporarily the mixed materials at 1100 to 1200° C. for 2 to 10 hours; grinding the temporarily baked materials to powder; molding the powder; and sintering the molded powder. A solid oxide fuel cell, has: the solid electrolyte material; a cathode electrode formed on one surface of the solid electrolyte material; and an anode electrode formed on the other surface of the solid electrolyte material. The solid oxide fuel cell has a stable and long operation at low temperature.
摘要翻译：固体电解质材料包含由B位含有至少Ga的化学式A1-αBO3-δ表示的A位缺陷型复合氧化物，该固体电解质材料在低温高温下具有稳定的高氧离子传导性韧性。一种制造固体电解质材料的方法，包括：混合各组成元素的氧化物材料; 将混合物料在1100〜1200℃下暂时烘烤2〜10小时; 将暂时烘烤的材料研磨成粉末; 成型粉末; 并烧结成型粉末。一种固体氧化物燃料电池，具有：固体电解质材料; 形成在固体电解质材料的一个表面上的阴极电极; 以及形成在固体电解质材料的另一个表面上的阳极电极。固体氧化物燃料电池在低温下具有稳定且长时间的操作。

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