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1. 发明授权

US5912475A Optical semiconductor device with InP 失效
标题翻译：带InP的光学半导体器件
公开(公告)号：US5912475A
公开(公告)日：1999-06-15
申请号：US767924
申请日：1996-12-17
申请人： Takushi Itagaki , Daisuke Suzuki , Tatsuya Kimura
发明人： Takushi Itagaki , Daisuke Suzuki , Tatsuya Kimura
IPC分类号： G02F1/025 , H01S5/00 , H01S5/0625 , H01L33/00
CPC分类号： H01S5/06258
摘要： An optical semiconductor device includes an n-type InP substrate having top and bottom surfaces; a stripe-shaped mesa structure including an n-type cladding layer, a multi quantum well layer, and a p-type first upper cladding layer disposed on the top surface of the substrate; a first layer of a semi-insulating material, an n-type InP hole blocking layer having a carrier concentration equal to or less than 4.times.10.sup.18 cm.sup.-3 and more than 1.times.10.sup.18 cm.sup.-3, and a second layer of the semi-insulating material disposed burying the mesa structure; a second p-type cladding layer and a p-type contact layer disposed on the mesa structure and on the second layer of the semi-insulating material, and p side electrodes spaced from each other in a stripe direction of the mesa structure, disposed on the p-type contact layer; and an n side electrode disposed on the bottom surface of the substrate. Therefore, an optical semiconductor device is available which has superior element isolation characteristics and broad modulation bandwidth, and enables the individual elements to operate with the utmost performance.
摘要翻译：光学半导体器件包括具有顶表面和底表面的n型InP衬底; 包括n型包覆层，多量子阱层和设置在衬底的顶表面上的p型第一上包层的条状台面结构; 半绝缘材料的第一层，载流子浓度等于或小于4×10 18 cm -3且大于1×10 18 cm -3的n型InP空穴阻挡层和设置在所述半绝缘材料上的第二层埋葬台面结构; 设置在半绝缘材料的台面结构和第二层上的第二p型覆层和p型接触层，以及在台面结构的条带方向上彼此隔开的p侧电极，设置在 p型接触层; 以及设置在基板的底面上的n侧电极。因此，可获得具有优异的元件隔离特性和宽调制带宽的光学半导体器件，并且能够使各个元件以最大的性能进行操作。

2. 发明授权

US6026106A Composite optical device 失效
标题翻译：复合光学器件
公开(公告)号：US6026106A
公开(公告)日：2000-02-15
申请号：US933307
申请日：1997-09-18
申请人： Daisuke Suzuki , Tatsuya Kimura , Tohru Takiguchi
发明人： Daisuke Suzuki , Tatsuya Kimura , Tohru Takiguchi
IPC分类号： G02B6/12 , G02B6/42 , H01S5/026 , H01S5/227 , H01S5/40 , H01S3/18
CPC分类号： H01S5/026 , G02B6/12004 , H01S5/0265 , G02B6/42 , H01S5/2275 , H01S5/4068
摘要： A composite optical device having a high efficiency of coupling a laser diode and an optical device and a method of producing the composite optical device. The composite optical device connects a laser diode with a first mesa including an active layer on a (001) plane of a compound semiconductor substrate via a first cladding layer and an optical device provided with a second mesa including an optical waveguide layer formed on the (001) plane via a second cladding layer, wherein one end of the active layer and one end of the optical waveguide layer oppose each other at a distance smaller than the thicknesses of the first and second cladding layers. At least the second cladding layer is grown in an ambient supplemented with HCl to produce a planar surface.
摘要翻译：具有耦合激光二极管和光学器件的高效率的复合光学器件和制造复合光学器件的方法。复合光学器件经由第一包层将激光二极管与化合物半导体衬底的（001）面上的具有活性层的第一台面连接，所述第一台面设置有第二台面，该第二台面包括形成在（ 001）平面，其中有源层的一端和光波导层的一端以比第一和第二覆层的厚度小的距离彼此相对。至少第二包覆层在补充有HCl的环境中生长以产生平坦表面。

3. 发明授权

US5805629A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5805629A
公开(公告)日：1998-09-08
申请号：US747050
申请日：1996-11-12
申请人： Masayoshi Takemi , Tatsuya Kimura , Daisuke Suzuki , Tetsuo Shiba , Kimitaka Shibata
发明人： Masayoshi Takemi , Tatsuya Kimura , Daisuke Suzuki , Tetsuo Shiba , Kimitaka Shibata
IPC分类号： H01L21/20 , H01S5/00 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/323 , H01S3/19
CPC分类号： H01S5/227 , H01S5/2081 , H01S5/2201 , H01S5/2206 , H01S5/2275 , H01S5/32391
摘要： A semiconductor device includes a p type InP substrate with a (001) surface; a mesa structure formed by dry etching, extending along a direction, including semiconductor layers, having (110) side surfaces, and a height H.sub.m ; and mesa burying layers including a p type InP burying layer on the (110) side surfaces and the (001) surface, the p type InP burying layer having a thickness D.sub.p, and an n type InP burying layer on the p type InP burying layer. An angle between a (111)B surface and (001) surface is .theta..sub.111, the growth rates on the (110) side surfaces and on the (001) surface are respectively R.sub.g (110) and R.sub.g (001), an angle .theta. is tan .theta.=R.sub.g (110)/R.sub.g (001) and the critical thickness D.sub.n of the n type InP burying layer on the (001) surface when the n type InP burying layer is not grown on the (111)B surface is ##EQU1## The n type InP burying layer has a thickness D.ltoreq.D.sub.n. The leakage current path width is narrowed and contact of the n type InP burying layer and an uppermost layer of the semiconductor layers is avoided. Consequently, a semiconductor device having reduced leakage current and superior device characteristics is obtained.
摘要翻译：半导体器件包括具有（001）表面的p型InP衬底; 通过干蚀刻形成的台面结构，沿着<110>方向延伸，包括具有（1 + E，ov 1 + EE 0）侧表面的半导体层和高度Hm; （1 + E，ovs 1 + EE 0）侧表面和（001）表面的p型InP掩埋层和具有厚度Dp的p型InP掩埋层和n型InP掩埋层的台面掩埋层在p型InP埋层中。（111）B表面和（001）表面之间的角度为θ111，（1 + E，ovs 1 + EE 0）侧表面和（001）表面上的生长速率分别为Rg（1 + E ，ovs 1 + EE 0）和Rg（001），角度θ为tanθ= Rg（1 + E，ovs 1 + EE 0）/ Rg（001）和n型InP掩埋层的临界厚度Dn 在（111）B表面上未生长n型InP掩埋层时，（001）表面是n型InP掩埋层，其厚度D

4. 发明授权

US10965145B2 Charge control device, charging system, and charge control method 有权
公开(公告)号：US10965145B2
公开(公告)日：2021-03-30
申请号：US16213026
申请日：2018-12-07
申请人： Daisuke Suzuki , Takafumi Goto , Kensuke Kuroda
发明人： Daisuke Suzuki , Takafumi Goto , Kensuke Kuroda
IPC分类号： H02J7/06 , H02J7/04 , H02J7/02
摘要： A charge control device for controlling charging of a secondary battery by using a current limit function of an external power supply includes: a charge control element arranged to be connected in series between the external power supply and the secondary battery; a constant current control unit configured to control an output current of the charge control element to be constant; a constant voltage control unit configured to control an output voltage of the charge control element to be constant; and an ON state setting unit configured to set the charge control element to an ON state, wherein the charge control element includes a control terminal to which a control signal for controlling the output current and the output voltage is input, and is composed of a single output element.

5. 发明授权

US09391772B2 Key information generation device and key information generation method 有权
标题翻译：关键信息生成装置及关键信息生成方法
公开(公告)号：US09391772B2
公开(公告)日：2016-07-12
申请号：US14115251
申请日：2011-06-02
申请人： Daisuke Suzuki
发明人： Daisuke Suzuki
IPC分类号： H04L9/10 , H04L9/08 , H04L9/32 , G06F12/14 , G11B20/00 , G06F21/50 , G06F21/70
CPC分类号： H04L9/0866 , G06F12/14 , G06F21/50 , G06F21/70 , G06F2221/21 , G11B20/00086 , H04L9/3278
摘要： In initial generation (for example, shipping from the factory), a security device generates an identifier w specific to the security device, with the PUF technology, generates key information k (k=HF(k)) from the identifier w, generates encrypted confidential information x by encrypting (x=Enc(mk, k)) confidential information mk with the key information k, and stores the encrypted confidential information x and an authentication code h (h=HF′(k)) of the key information k, in a nonvolatile memory. In operation, the security device generates the identifier w with the PUF technology, generates the key information k from the identifier w, and decrypts the encrypted confidential information x with the key information k. At a timing where the identifier w is generated in the operation, the security device checks whether the current operating environment has largely changed from the initial generation (S311). If a change in operating environment is detected (S311→S312), the security device conducts a reset-up process (S312 to S315) of an authentication code h which is confidential information, and the encrypted confidential information x.
摘要翻译：在初始阶段（例如，出厂时），安全设备生成特定于安全设备的标识符w，利用PUF技术，从标识符w生成密钥信息k（k = HF（k）），生成加密机密信息x通过用密钥信息k加密（x = Enc（mk，k））机密信息mk，并且将加密的机密信息x和密钥信息k的认证码h（h = HF'（k））存储，在非易失性存储器中。在操作中，安全设备利用PUF技术生成标识符w，从标识符w生成密钥信息k，并用密钥信息k对加密的机密信息进行解密。在操作中生成标识符w的定时，安全装置检查当前的操作环境是否从初始生成发生了很大的变化（S311）。如果检测到操作环境发生变化（S311→S312），则安全装置进行作为机密信息的认证码h的复位处理（S312〜S315）和加密的机密信息x。

6. 发明授权

US09197084B2 Charge controller with protective function and battery pack 有权
公开(公告)号：US09197084B2
公开(公告)日：2015-11-24
申请号：US13748174
申请日：2013-01-23
申请人： Gentaro Kurokawa , Daisuke Suzuki , Junji Takeshita
发明人： Gentaro Kurokawa , Daisuke Suzuki , Junji Takeshita
IPC分类号： H02J7/00
摘要： A charge controller includes a charge control circuit that, when detecting that a charging power supply is connected, controls the charging transistor to apply the charge current; a first and second control switch element connected in series between one terminal of a secondary battery and an external terminal; and a protection circuit that, when the secondary battery is over-discharged, turns off the first control switch element to stop discharge current and when deeply discharged, turns off the second control switch element. The protection circuit sends a charge inhibit signal to the charge control circuit when the secondary battery is deeply discharged, and while receiving the charge inhibit signal, the charge control circuit keeps the charging transistor off to prevent the charge current from flowing even if detecting that the charging power supply is connected.

7. 发明授权

US09091198B2 Insulator and exhaust system of internal-combustion engine 有权
标题翻译：内燃机绝缘子和排气系统
公开(公告)号：US09091198B2
公开(公告)日：2015-07-28
申请号：US13005662
申请日：2011-01-13
申请人： Daisuke Suzuki
发明人： Daisuke Suzuki
IPC分类号： B32B3/06 , B32B3/10 , B32B15/00 , B32B17/06 , F16L9/14 , F01N13/14 , F16L59/02
CPC分类号： F01N13/14 , F16L59/028 , Y10T428/24612 , Y10T428/249921
摘要： An insulator having an inner surface for covering an exhaust system of an internal-combustion engine includes a cover member having a surface, a joint member formed on the surface of the cover member, and a mat member made of material including at least one of ceramic fibers and glass fibers, the mat member being attached to the cover member through binding of the fibers to the joint member, and the mat member being exposed to form the inner surface.
摘要翻译：具有用于覆盖内燃机的排气系统的内表面的绝缘体包括具有表面的盖构件，形成在盖构件的表面上的接合构件以及由材料制成的垫构件，所述垫构件包括至少一个陶瓷纤维和玻璃纤维，垫构件通过将纤维粘合到接合构件而附接到覆盖构件，并且垫构件被暴露以形成内表面。

8. 发明授权

US09031232B2 Bit sequence generation apparatus and bit sequence generation method 有权
标题翻译：比特序列生成装置和比特序列生成方法
公开(公告)号：US09031232B2
公开(公告)日：2015-05-12
申请号：US13522439
申请日：2010-01-15
申请人： Daisuke Suzuki
发明人： Daisuke Suzuki
IPC分类号： G06F21/00 , H03K3/84 , H04L9/08 , G06F7/58
CPC分类号： H03K3/84 , G06F7/58 , G06F7/588 , H04L9/0866 , H04L9/0869
摘要： A bit sequence generation apparatus includes a glitch generating circuit that generates a glitch, a sampling circuit that samples the glitch waveform generated by the glitch generating circuit, and a glitch shape determination circuit that generates 1-bit data indicating either 1 or 0, based on the glitch waveform sampled by the sampling circuit, and generates a bit sequence composed of a plurality of generated 1-bit data. The bit sequence generation apparatus can provide a PUF circuit that is able to generate highly randomized secret information even in a device with a low degree of freedom of alignment and wiring and that does not violate the design rules.
摘要翻译：比特序列产生装置包括产生毛刺的毛刺产生电路，对由毛刺产生电路产生的毛刺波形进行采样的采样电路和产生指示1或0的1比特数据的毛刺形状确定电路，基于由采样电路采样的毛刺波形，并产生由多个生成的1比特数据组成的比特序列。比特序列生成装置可以提供即使在具有低对准和布线自由度的设备中也能够生成高度随机化的秘密信息的PUF电路，并且不违反设计规则。

9. 发明申请

US20150016722A1 IMAGE PROCESSING DEVICE AND METHOD 有权
标题翻译：图像处理装置和方法
公开(公告)号：US20150016722A1
公开(公告)日：2015-01-15
申请号：US14380629
申请日：2013-02-21
申请人： Tsubasa Onda , Yoshitaka Toyoda , Daisuke Suzuki , Koichi Yamashita , Narihiro Matoba
发明人： Tsubasa Onda , Yoshitaka Toyoda , Daisuke Suzuki , Koichi Yamashita , Narihiro Matoba
IPC分类号： G06T5/00 , H04N9/73 , H04N9/77
CPC分类号： G06T5/009 , G06T5/008 , G06T2207/10024 , G06T2207/20012 , H04N1/6027 , H04N5/235 , H04N5/2355 , H04N9/3179 , H04N9/73 , H04N9/77
摘要： A region determination circuit (60) determines whether or not each of the pixels in an image is within a region subject to correction, in which pixels having at most a predetermined brightness level appear with a frequency equal to or less than a predetermined value. An offset level generation circuit (10) generates an offset level (Offset) on the basis of the brightness of the pixels determined to be within the region subject to correction. An offset subtraction circuit (1) subtracts the offset level (Offset) from the image signal (Yi) to generate an offset image signal (Yofst). A gain generation circuit (20) generates a gain for the offset image signal (Yofst). A gain multiplication circuit (2) multiplies the offset image signal (Yofst) by the gain to generate a corrected image signal (Ya).
摘要翻译：区域确定电路（60）确定图像中的每个像素是否在经过校正的区域内，其中出现具有等于或小于预定值的频率的具有至多预定亮度级的像素。偏移电平生成电路（10）根据确定为在校正区域内的像素的亮度产生偏移电平（Offset）。偏移减法电路（1）从图像信号（Yi）中减去偏移电平（Offset），产生偏移图像信号（Yofst）。增益生成电路（20）产生偏移图像信号（Yofst）的增益。增益乘法电路（2）将偏移图像信号（Yofst）乘以增益以产生校正图像信号（Ya）。

10. 发明授权

US08647650B2 Composition for external use and method for producing the same 有权
标题翻译：外用组合物及其制造方法
公开(公告)号：US08647650B2
公开(公告)日：2014-02-11
申请号：US13514623
申请日：2010-12-03
申请人： Masayoshi Miyamoto , Tomomi Kuromiya , Daisuke Suzuki
发明人： Masayoshi Miyamoto , Tomomi Kuromiya , Daisuke Suzuki
IPC分类号： A61K8/02 , A61K9/14
CPC分类号： A61K8/044 , A61K8/0241 , A61K8/44 , A61K2800/412 , A61K2800/652 , A61Q19/02 , C07C227/42 , C07C2601/14 , Y10T428/2982 , C07C229/46
摘要： A method for producing a composition for external use containing a physiologically acceptable salt of a tranexamate as an active ingredient, which is dispersed in the composition in the state of fine particles, includes dissolving a physiologically acceptable salt of the tranexamate in a solvent to prepare a solution, to which a salting-out agent is added to precipitate the salt. Such salt is so dispersed in a composition for external use in the state of fine particles, that the tranexamate salt can be mixed without using a large amount of an oil component to obtain a composition for external use affording excellent feel of use and stability.
摘要翻译：包含以细颗粒状态分散在组合物中的含有作为活性成分的作为有效成分的氨基甲酸酯的生理学上可接受的盐的外用组合物的制造方法包括将溶剂中的生理上可接受的盐酸盐溶解在溶剂中，溶液，加入盐析剂以沉淀盐。这样的盐分散在细粒状态的外用组合物中，可以在不使用大量油性成分的情况下混合氨甲磺酸盐，得到外用的使用感和稳定性的组合物。

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