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1. 发明授权

US07378062B2 Object processing apparatus and plasma facility comprising the same 有权
标题翻译：对象处理装置和包括该对象处理装置的等离子体设备
公开(公告)号：US07378062B2
公开(公告)日：2008-05-27
申请号：US10276301
申请日：2001-05-28
申请人： Ryohei Itatani , Mikio Deguchi , Bencherki Mebarki , Toshihiko Toda , Heitaro Ban , Ryohei Itatani, legal representative
发明人： Toshiaki Ishikawa
IPC分类号： B01J19/08
CPC分类号： B01D53/70 , B01D53/323 , B01D2257/204 , B01D2257/2062 , B01D2257/2064 , B01D2257/2066 , B01D2257/30 , B01D2257/40 , B01D2259/818 , H05H1/46 , H05H2001/466 , H05H2245/1215 , Y02C20/30
摘要： A processing apparatus for subject of the present invention uses a high voltage electrode and a ground electrode, and generates plasma under atmospheric pressure in a reaction passage through which a to-be-processed subject passes. For example, even fluorocompound such as PFC including CF4 can effectively be decomposed because the fluorocompound is brought into contact with plasma in a small space for sufficient time, and the apparatus has a small and simple structure. Therefore, the apparatus can be added to each process chamber.
摘要翻译：本发明的主题的处理装置使用高电压电极和接地电极，在被处理对象通过的反应通道中，在大气压下产生等离子体。例如，即使氟化合物如包含CF 4 N的PFC也可以有效地分解，因为氟化合物在小空间中与等离子体接触足够的时间，并且该装置具有小而简单的结构。因此，可以将该装置添加到每个处理室。

2. 发明授权

US5228948A Method for fabricating recrystallized semiconductor film 失效
标题翻译：用于制备重晶体半导体膜的方法
公开(公告)号：US5228948A
公开(公告)日：1993-07-20
申请号：US802481
申请日：1991-12-05
申请人： Mikio Deguchi
发明人： Mikio Deguchi
IPC分类号： H01L21/20 , H01L21/225 , H01L21/84
CPC分类号： H01L21/2022 , H01L21/2007 , H01L21/2254 , Y10S117/913
摘要： A method for fabricating a recrystallized semiconductor film includes forming a polycrystalline or amorphous semiconductor film on a base having a melting point or softening temperature lower than the melting point of the semiconductor film, heating the base to melt it with a first heater, and melting the semiconductor film with a second heater and recrystallizing the semiconductor film while the base is molten. Thereby, generation of stress in the semiconductor film is prevented or reduced and the planarity of the semiconductor film is not damaged by distortion of the substrate and the temperature in the semiconductor film is uniform at the time of recrystallization. As a result, a recrystallized film with good crystallinity is obtained.
摘要翻译：制造再结晶半导体膜的方法包括在具有低于半导体膜的熔点的熔点或软化温度的基底上形成多晶或非晶半导体膜，加热基底以用第一加热器熔化，具有第二加热器的半导体膜，并且在基底熔融时重新结晶半导体膜。由此，防止或减少半导体膜中的应力的产生，并且半导体膜的平坦性不会由于基板的变形而损坏，并且半导体膜中的温度在再结晶时是均匀的。结果，得到结晶度良好的再结晶膜。

3. 发明授权

US5441577A Thin film solar cell and production method therefor 失效
标题翻译：薄膜太阳能电池及其制作方法
公开(公告)号：US5441577A
公开(公告)日：1995-08-15
申请号：US261948
申请日：1994-06-17
申请人： Hajime Sasaki , Hiroaki Morikawa , Kazuhiko Satoh , Mikio Deguchi
发明人： Hajime Sasaki , Hiroaki Morikawa , Kazuhiko Satoh , Mikio Deguchi
IPC分类号： C23C14/56 , C23C16/24 , C23C16/50 , C23C16/54 , C30B25/02 , H01L31/0392 , H01L31/048 , H01L31/05 , H01L31/18
CPC分类号： C30B29/06 , C23C14/568 , C23C16/24 , C23C16/50 , C23C16/545 , C30B25/02 , H01L31/02366 , H01L31/03921 , H01L31/0463 , H01L31/048 , H01L31/0508 , H01L31/186 , H01L31/1876 , H01L31/1892 , Y02E10/50 , Y02P70/521 , Y10S148/122
摘要： A method for producing a thin-film solar cell having a thin-film active layer on a graphite sheet substrate includes the steps of adhering two sheets of graphite together, forming semiconductor thin films serving as active layers on second main surfaces of the two sheets of graphite, and separating the two sheets of graphite from each other. In this structure, stress caused by a difference in expansion coefficients between the upper sheet and the semiconductor thin film is cancelled by stress caused by a difference in expansion coefficients between the lower sheet and the semiconductor thin film. Therefore, curvature of the substrates is prevented whereby subsequent process steps are easily carried out. In addition, the number of products per unit time is doubled, thereby increasing productivity.
摘要翻译：一种在石墨片基片上制造具有薄膜活性层的薄膜太阳能电池的方法包括以下步骤：将两片石墨粘在一起，在两片片材的第二主表面上形成用作活性层的半导体薄膜石墨，并将两片石墨彼此分离。在该结构中，由上片和半导体薄膜之间的膨胀系数差引起的应力由下片和半导体薄膜之间的膨胀系数差引起的应力消除。因此，防止了基板的弯曲，从而容易进行随后的工艺步骤。此外，每单位时间的产品数量翻了一番，从而提高了生产力。

4. 发明授权

US5397713A Method of producing thin-film solar cell 失效
标题翻译：制造薄膜太阳能电池的方法
公开(公告)号：US5397713A
公开(公告)日：1995-03-14
申请号：US993021
申请日：1992-12-18
申请人： Satoshi Hamamoto , Mikio DeGuchi
发明人： Satoshi Hamamoto , Mikio DeGuchi
IPC分类号： H01L21/02 , H01L31/04 , H01L31/048 , H01L31/18
CPC分类号： H01L31/048 , H01L31/0445 , H01L31/1804 , H01L31/1872 , H01L31/1896 , Y02E10/547 , Y02P70/521 , Y10S148/135
摘要： In a method of producing a thin-film solar cell, a graphite sheet in which the breaking stress in a thickness direction is smaller than the breaking stress in a direction perpendicular to the thickness direction is adhered to a heat resistant substrate, a semiconductor thin film is formed on the graphite sheet in a high temperature process, a second substrate for supporting the semiconductor thin film is adhered to the semiconductor thin film, and the graphite sheet is broken by applying a mechanical stress to the heat resistant substrate and the second substrate. The semiconductor thin film is reliably supported by the heat resistant substrate during high temperature processing and easily removed from the heat resistant substrate by breaking the graphite sheet. In addition, since the graphite sheet has an anisotropic breaking stress, fragments of the graphite sheet remaining on the surface of the semiconductor thin film are easily removed. As a result, a high quality thin film solar cell is produced reliably at low cost.
摘要翻译：在制造薄膜太阳能电池的方法中，在厚度方向上的断裂应力小于在与厚度方向垂直的方向上的断裂应力的石墨片粘附到耐热基板上，半导体薄膜在高温工艺中形成在石墨片上，用于支撑半导体薄膜的第二基板粘附到半导体薄膜上，并且通过对耐热基板和第二基板施加机械应力来破坏石墨片。半导体薄膜在耐高温处理时被耐热基板可靠地支撑，并且通过破坏石墨片而容易地从耐热基板上去除。此外，由于石墨片具有各向异性的断裂应力，因此易于除去残留在半导体薄膜的表面上的石墨片的碎片。结果，以低成本可靠地生产高品质的薄膜太阳能电池。

5. 发明授权

US5273911A Method of producing a thin-film solar cell 失效
标题翻译：薄膜太阳能电池的制造方法
公开(公告)号：US5273911A
公开(公告)日：1993-12-28
申请号：US846793
申请日：1992-03-05
申请人： Hajime Sasaki , Hiroaki Morikawa , Kazuhiko Satoh , Mikio Deguchi
发明人： Hajime Sasaki , Hiroaki Morikawa , Kazuhiko Satoh , Mikio Deguchi
IPC分类号： C23C14/56 , C23C16/24 , C23C16/50 , C23C16/54 , C30B25/02 , H01L31/0392 , H01L31/048 , H01L31/05 , H01L31/18 , H01L31/0368
CPC分类号： C30B29/06 , C23C14/568 , C23C16/24 , C23C16/50 , C23C16/545 , C30B25/02 , H01L31/02366 , H01L31/03921 , H01L31/0463 , H01L31/048 , H01L31/0508 , H01L31/186 , H01L31/1876 , H01L31/1892 , Y02E10/50 , Y02P70/521 , Y10S148/122
摘要： A method for producing a thin-film solar cell having a thin-film active layer on a graphite sheet substrate includes the steps of adhering two sheets of graphite together, forming semi-conductor thin films serving as active layers on second main surfaces of the two sheets of graphite, and separating the two sheets of graphite from each other. In this structure, stress caused by a difference in expansion coefficients between the upper sheet and the semiconductor thin film is cancelled by stress caused by a difference in expansion coefficients between the lower sheet and the semiconductor thin film. Therefore, curvature of the substrates is prevented whereby subsequent process steps are easily carried out. In addition, the number of products per unit time is doubled, thereby increasing productivity.
摘要翻译：一种在石墨片基片上具有薄膜活性层的薄膜太阳能电池的制造方法，其特征在于，将两片石墨粘合在一起，形成作为活性层的半导体薄膜的工序石墨片，并将两片石墨彼此分离。在该结构中，由上片和半导体薄膜之间的膨胀系数差引起的应力由下片和半导体薄膜之间的膨胀系数差引起的应力消除。因此，防止了基板的弯曲，从而容易地进行后续的工艺步骤。此外，每单位时间的产品数量翻了一番，从而提高了生产力。

6. 发明授权

US5151373A Method of making a solar cell electrode 失效
标题翻译：制造太阳能电池电极的方法
公开(公告)号：US5151373A
公开(公告)日：1992-09-29
申请号：US764363
申请日：1991-09-23
申请人： Mikio Deguchi , Takushi Itagaki , Masaaki Usui
发明人： Mikio Deguchi , Takushi Itagaki , Masaaki Usui
IPC分类号： H01L31/04 , H01L31/0224 , H05K3/32
CPC分类号： H01R4/04 , H01L31/022425 , H01L2924/0002 , H05K3/321 , Y02E10/50
摘要： An electrode structure of a solar cell includes a metal wire fixed to the light incident surface of the solar cell with an electrically conductive adhesive. An electrode production method of a solar cell includes applying an electrically conductive adhesive to at least one of a portion of a metal wire and a portion of the light incident surface of the solar cell, pressing the metal wire into a predetermined position of the light incident surface of the solar cell, and solidifying the conductive adhesive to fix the metal wire.

7. 发明授权

US4760556A Nonvolatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US4760556A
公开(公告)日：1988-07-26
申请号：US911431
申请日：1986-09-25
申请人： Mikio Deguchi , Kazuyasu Fujishima , Yasushi Terada
发明人： Mikio Deguchi , Kazuyasu Fujishima , Yasushi Terada
IPC分类号： G11C17/00 , G11C11/404 , G11C14/00 , G11C16/04 , G11C11/40
CPC分类号： G11C14/00
摘要： Each of the memory cells forming a nonvolatile RAM comprises one floating-gate transistor and one capacitor. When the power source is turned on, storage of information is performed according to the amount of electric charge stored in each capacitor. When the power source is turned off, nonvolatile storage of information is performed according to the level of the threshold voltage of each floating-gate transistor.
摘要翻译：形成非易失性RAM的每个存储单元包括一个浮栅晶体管和一个电容器。当电源接通时，根据每个电容器中存储的电荷量进行信息存储。当电源关闭时，根据每个浮栅晶体管的阈值电压的电平执行信息的非易失性存储。

8. 发明授权

US5665607A Method for producing thin film solar cell 失效
标题翻译：薄膜太阳能电池的制造方法
公开(公告)号：US5665607A
公开(公告)日：1997-09-09
申请号：US258745
申请日：1994-06-10
申请人： Yoshitatsu Kawama , Mikio Deguchi , Shigeru Mitsui , Hideo Naomoto , Satoshi Arimoto , Satoshi Hamamoto , Hiroaki Morikawa , Hisao Kumabe
发明人： Yoshitatsu Kawama , Mikio Deguchi , Shigeru Mitsui , Hideo Naomoto , Satoshi Arimoto , Satoshi Hamamoto , Hiroaki Morikawa , Hisao Kumabe
IPC分类号： H01L21/205 , H01L31/0224 , H01L31/0352 , H01L31/04 , H01L31/18 , H01L31/0368
CPC分类号： H01L31/1892 , H01L31/022425 , H01L31/03529 , H01L31/18 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02P70/521 , Y10S438/977
摘要： In a method for fabricating a thin film solar cell, a thin semiconductor film serving as a power generating layer is formed on a substrate via an intermediate layer, a plurality of holes are formed penetrating through the thin semiconductor film and reaching the intermediate layer, and the intermediate layer is etched away through the through-holes, separating the thin semiconductor film from the substrate with high-efficiency. Since stress is hardly applied to the thin semiconductor film during the separation process, cracking and breaking of the semiconductor film is avoided. Further, since the surface of the substrate is maintained in good condition, the substrate can be reused, resulting in a reduction in the production cost.
摘要翻译：在制造薄膜太阳能电池的方法中，通过中间层在基板上形成用作发电层的薄半导体膜，穿过薄半导体膜形成多个孔并到达中间层，并且通过通孔蚀刻中间层，从而高效地将薄的半导体膜与基板分离。由于在分离工序中难以对薄的半导体膜施加应力，因此避免了半导体膜的破裂和断裂。此外，由于基板的表面保持良好状态，因此可以重新使用基板，导致生产成本的降低。

9. 发明授权

US5467731A Method of producing a semiconductor structure including a recrystallized film 失效
标题翻译：制造包括再结晶膜的半导体结构的方法
公开(公告)号：US5467731A
公开(公告)日：1995-11-21
申请号：US322375
申请日：1994-10-13
申请人： Satoshi Arimoto , Norio Hayafuji , Mikio Deguchi , Satoshi Hamamoto
发明人： Satoshi Arimoto , Norio Hayafuji , Mikio Deguchi , Satoshi Hamamoto
IPC分类号： H01L21/208 , H01L21/20 , C30B13/20
CPC分类号： H01L21/2022
摘要： A method for producing a semiconductor structure including a semiconductor film formed on a semiconductor substrate body via an insulating film includes: laminating a first insulating film, a first semiconductor film, and a second insulating film on the semiconductor substrate successively; forming stripe-shaped second semiconductor films of predetermined width on the second insulating film arranged periodically at a predetermined interval and covering these second semiconductor films with a third insulating film; performing zone melting recrystallization of the first semiconductor film from one end of the substrate to the opposite end along the stripe direction of the stripe-shaped second semiconductor film; etching the third insulating film and portions of the second insulating film not sandwiched by the first and second semiconductor films; oxidizing portions of the second semiconductor film and the first semiconductor film exposed in the etching step and etching and removing the second insulating film remaining after the previous etching. Thus, a semiconductor substrate including a recrystallized semiconductor film having removed sub-grain-boundaries generated during the zone melting recrystallization, is obtained by fewer process steps than in the prior art.
摘要翻译：一种用于制造半导体结构的方法，该半导体结构包括通过绝缘膜形成在半导体衬底本体上的半导体膜，包括：依次在半导体衬底上层叠第一绝缘膜，第一半导体膜和第二绝缘膜; 在预定间隔周期性地布置的第二绝缘膜上形成预定宽度的条状第二半导体膜，并用第三绝缘膜覆盖这些第二半导体膜; 从所述基板的一端到所述条状的第二半导体膜的条带方向的相反端进行区域熔融再结晶的第一半导体膜; 蚀刻第三绝缘膜和未被第一和第二半导体膜夹持的第二绝缘膜的部分; 在蚀刻步骤中暴露的第二半导体膜和第一半导体膜的氧化部分，并蚀刻除去在先前蚀刻之后残留的第二绝缘膜。因此，通过比现有技术更少的工艺步骤获得包括在区域熔融再结晶期间产生的去除亚晶界的再结晶半导体膜的半导体衬底。

10. 发明授权

US5344500A Thin-film solar cell 失效
标题翻译：薄膜太阳能电池
公开(公告)号：US5344500A
公开(公告)日：1994-09-06
申请号：US115720
申请日：1993-09-03
申请人： Hajime Sasaki , Hiroaki Morikawa , Kazuhiko Satoh , Mikio DeGuchi
发明人： Hajime Sasaki , Hiroaki Morikawa , Kazuhiko Satoh , Mikio DeGuchi
IPC分类号： C23C14/56 , C23C16/24 , C23C16/50 , C23C16/54 , C30B25/02 , H01L31/0392 , H01L31/048 , H01L31/05 , H01L31/18 , H01L31/0368 , H01L31/04
CPC分类号： C30B29/06 , C23C14/568 , C23C16/24 , C23C16/50 , C23C16/545 , C30B25/02 , H01L31/02366 , H01L31/03921 , H01L31/0463 , H01L31/048 , H01L31/0508 , H01L31/186 , H01L31/1876 , H01L31/1892 , Y02E10/50 , Y02P70/521 , Y10S148/122
摘要： A method for producing a thin-film solar cell having a thin-film active layer on a graphite sheet substrate includes the steps of adhering two sheets of graphite together, forming semiconductor thin films serving as active layers on second main surfaces of the two sheets of graphite, and separating the two sheets of graphite from each other. In this structure, stress caused by a difference in expansion coefficients between the upper sheet and the semiconductor thin film is cancelled by stress caused by a difference in expansion coefficients between the lower sheet and the semiconductor thin film. Therefore, curvature of the substrates is prevented whereby subsequent process steps are easily carried out. In addition, the number of products per unit time is doubled, thereby increasing productivity.
摘要翻译：一种在石墨片基片上制造具有薄膜活性层的薄膜太阳能电池的方法包括以下步骤：将两片石墨粘在一起，在两片片材的第二主表面上形成用作活性层的半导体薄膜石墨，并将两片石墨彼此分离。在该结构中，由上片和半导体薄膜之间的膨胀系数差引起的应力由下片和半导体薄膜之间的膨胀系数差引起的应力消除。因此，防止了基板的弯曲，从而容易进行随后的工艺步骤。此外，每单位时间的产品数量翻了一番，从而提高了生产力。

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