专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050206421A1 Nonvolatile flip-flop circuit and method of driving the same 有权
标题翻译：非易失性触发电路及其驱动方法
公开(公告)号：US20050206421A1
公开(公告)日：2005-09-22
申请号：US11080454
申请日：2005-03-16
申请人： Takashi Nishikawa , Kenji Toyoda , Takashi Ohtsuka
发明人： Takashi Nishikawa , Kenji Toyoda , Takashi Ohtsuka
IPC分类号： G11C11/22 , H03K3/356 , H03K3/289
CPC分类号： H03K3/356008 , G11C11/22
摘要： The present invention provides a method of driving a nonvolatile flip-flop circuit comprising the following steps of: a data hold step of holding an input data signal D utilizing polarization of a ferroelectric material of a ferroelectric gate transistor (601) when the data signal D is input while a first clocked inverter (604), a second clocked inverter (603), and a third switching element (602) are turned on and a first switching element (605), a second switching element (607), and a third clocked inverter (608) are turned off; and a data output step of outputting an output signal Q (−Q) based on the held data signal D placing the first clocked inverter (604), the second clocked inverter (603), and the third switching element (602) in the OFF state and placing the first switching element (605), the second switching element (607), and the third clocked inverter (608) in the ON state so as to interrupt an input of a data signal and maintain a polarization state of the ferroelectric material of the ferroelectric gate transistor (601).
摘要翻译：本发明提供了一种驱动非易失性触发电路的方法，包括以下步骤：数据保持步骤，当数据信号D（D）被利用时，利用铁电栅极晶体管（601）的铁电材料的极化来保持输入数据信号D 在第一时钟反相器（604），第二时钟反相器（603）和第三开关元件（602）导通时，第一开关元件（605），第二开关元件（607）和第三开关元件时钟反相器（608）关闭; 以及数据输出步骤，基于将第一时钟反相器（604），第二时钟反相器（603）和第三开关元件（602）放置在OFF中的保持数据信号D输出输出信号Q（-Q）状态，并且将第一开关元件（605），第二开关元件（607）和第三时钟反相器（608）置于导通状态，以便中断数据信号的输入并保持铁电材料的极化状态的铁电栅极晶体管（601）。

2. 发明授权

US07022530B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07022530B2
公开(公告)日：2006-04-04
申请号：US10311292
申请日：2002-04-03
申请人： Kiyoyuki Morita , Shoji Miyake , Michihito Ueda , Takashi Ohtsuka , Takashi Nishikawa
发明人： Kiyoyuki Morita , Shoji Miyake , Michihito Ueda , Takashi Ohtsuka , Takashi Nishikawa
IPC分类号： H01G7/06
CPC分类号： H01L29/802 , H01L21/823807 , H01L21/84 , H01L27/092 , H01L27/10873 , H01L27/11502 , H01L27/11507 , H01L27/1203 , H01L27/1214 , H01L27/1222 , H01L28/55 , H01L29/1054 , H01L29/783 , H01L29/78687
摘要： A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.
摘要翻译：依次沉积硅衬底101上的氧化硅膜102，Pt膜103x，Ti膜104x和PZT膜105x。将Si衬底101放置在室106中，使得PZT膜105x被EHF波108照射。用EHF波照射局部加热电介质膜，例如PZT膜。结果，可以改善例如电介质膜的泄漏特性，而不会对形成在Si衬底101上的器件产生不利影响。

3. 发明授权

US07002388B2 Nonvolatile flip-flop circuit and method of driving the same 有权
标题翻译：非易失性触发电路及其驱动方法
公开(公告)号：US07002388B2
公开(公告)日：2006-02-21
申请号：US11080454
申请日：2005-03-16
申请人： Takashi Nishikawa , Kenji Toyoda , Takashi Ohtsuka
发明人： Takashi Nishikawa , Kenji Toyoda , Takashi Ohtsuka
IPC分类号： H03K3/289 , H03K3/356
CPC分类号： H03K3/356008 , G11C11/22
摘要： The present invention provides a method of driving a nonvolatile flip-flop circuit comprising the following steps of: a data hold step of holding an input data signal D utilizing polarization of a ferroelectric material of a ferroelectric gate transistor (601) when the data signal D is input while a first clocked inverter (604), a second clocked inverter (603), and a third switching element (602) are turned on and a first switching element (605), a second switching element (607), and a third clocked inverter (608) are turned off; and a data output step of outputting an output signal Q (−Q) based on the held data signal D placing the first clocked inverter (604), the second clocked inverter (603), and the third switching element (602) in the OFF state and placing the first switching element (605), the second switching element (607), and the third clocked inverter (608) in the ON state so as to interrupt an input of a data signal and maintain a polarization state of the ferroelectric material of the ferroelectric gate transistor (601).
摘要翻译：本发明提供了一种驱动非易失性触发电路的方法，包括以下步骤：数据保持步骤，当数据信号D（D）被利用时，利用铁电栅极晶体管（601）的铁电材料的极化来保持输入数据信号D 在第一时钟反相器（604），第二时钟反相器（603）和第三开关元件（602）导通时，第一开关元件（605），第二开关元件（607）和第三开关元件时钟反相器（608）关闭; 以及数据输出步骤，基于将第一时钟反相器（604），第二时钟反相器（603）和第三开关元件（602）放置在OFF中的保持数据信号D输出输出信号Q（-Q）状态，并且将第一开关元件（605），第二开关元件（607）和第三时钟反相器（608）置于导通状态，以便中断数据信号的输入并保持铁电材料的极化状态的铁电栅极晶体管（601）。

4. 发明授权

US07135736B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07135736B2
公开(公告)日：2006-11-14
申请号：US10616917
申请日：2003-07-11
申请人： Takashi Nishikawa , Takashi Ohtsuka
发明人： Takashi Nishikawa , Takashi Ohtsuka
IPC分类号： H01L29/788
CPC分类号： H01L21/28291 , H01L21/28273 , H01L29/78391
摘要： This specification relates to a semiconductor device that comprises a semiconductor substrate 11, a source region 12 and a drain region 13, which are formed on the semiconductor substrate 11 with a channel region 14 therebetween; a floating gate electrode 152 that is formed on the channel region 14 with a gate insulator film 151 therebetween; a ferroelectric film 154 that is formed on the floating gate electrode 152; and a control gate electrode 156 that is formed on the ferroelectric film 154, wherein intermediate insulator films 153 and 155 are formed between at least one of the pairs consisting of the floating gate electrode 152 and the ferroelectric film 154, and the ferroelectric film 154 and the control gate electrode 156, and the intermediate insulator films 153 and 155 are made of hafnium oxide that contains nitrogen atoms.
摘要翻译：本说明书涉及半导体器件，其包括在半导体衬底11上形成有沟道区域14的半导体衬底11，源极区12和漏极区13; 在沟道区域14上形成有栅极绝缘膜151的浮栅电极152; 形成在浮栅电极152上的铁电体膜154; 以及形成在铁电体膜154上的控制栅极电极156，其中，在由浮置栅极电极152和铁电体膜154构成的至少一对之间形成中间绝缘膜153,155，以及强电介质膜154和控制栅电极156和中间绝缘膜153,155由含有氮原子的氧化铪构成。

5. 发明申请

US20100328894A1 OPTICAL INTERCONNECTION DEVICE 有权
标题翻译：光学互连器件
公开(公告)号：US20100328894A1
公开(公告)日：2010-12-30
申请号：US12865780
申请日：2009-02-16
申请人： Mikio Oda , Tomotaka Ishida , Hisaya Takahashi , Hideyuki Ono , Jun Sakai , Takashi Ohtsuka , Arihide Noda , Hikaru Kouta
发明人： Mikio Oda , Tomotaka Ishida , Hisaya Takahashi , Hideyuki Ono , Jun Sakai , Takashi Ohtsuka , Arihide Noda , Hikaru Kouta
IPC分类号： H05K7/20 , G02B6/36
CPC分类号： H01L25/167 , G02B6/4201 , G02B6/4257 , G02B6/4266 , G02B6/4274 , H01L2924/0002 , H01L2924/15174 , H01L2924/15192 , H01L2924/00
摘要： Provided is an optical interconnection device in which a volume required for cooling is reduced. In the optical interconnection device, a plurality of optical modules (12) are arranged on a periphery of an LSI (11) electrically connected to an electric wiring board (10), and liquid cooling mechanisms (13, 14) are respectively placed on the LSI (11) and the optical modules (12). The plurality of optical modules (12) may be arranged only on a surface of the electric wiring board (10) where the LSI (11) is mounted, only on a surface opposite to the surface where the LSI (11) is mounted, or on both the same surface as and the opposite surface to the surface where the LSI (11) is mounted.
摘要翻译：提供一种其中冷却所需的体积减小的光学互连装置。在光互连装置中，在与电气布线板（10）电连接的LSI（11）的周围配置多个光模块（12），液体冷却机构（13,14）分别置于 LSI（11）和光模块（12）。多个光学模块（12）可以仅布置在安装有LSI（11）的电气布线板（10）的仅在与安装LSI（11）的表面相对的表面上，或者在与安装LSI（11）的表面相同的表面上和相对的表面上。

6. 发明申请

US20100098383A1 PHOTOELECTRIC CONVERSION/CONNECTION DEVICE 失效
标题翻译：光电转换/连接装置
公开(公告)号：US20100098383A1
公开(公告)日：2010-04-22
申请号：US12449174
申请日：2008-01-21
申请人： Yuichi Koreeda , Wataru Ohtsu , Mikio Oda , Hisaya Takahashi , Takashi Ohtsuka , Hikaru Kouta , Hideyuki Ono
发明人： Yuichi Koreeda , Wataru Ohtsu , Mikio Oda , Hisaya Takahashi , Takashi Ohtsuka , Hikaru Kouta , Hideyuki Ono
IPC分类号： G02B6/36
CPC分类号： G02B6/4292 , G02B6/4284
摘要： In a photoelectric conversion/connection device (100) including an optical element (320), a mounting board (310) on which the optical element is mounted, and an optical connector (400) which is connected to the mounting board so as to be optically connected to the optical element, the optical connector (400) is arranged on a surface (310a) opposite to a mounting surface (310b) of the mounting board (310) and the optical element (320) is exposed. The photoelectric conversion/connection device (100) includes a motherboard (210) having a main surface (210a) and an electric connector (220) to be mounted on the main surface of the motherboard. The electric connector (220) is detachably connected to the mounting board (310).
摘要翻译：在包括光学元件（320）的光电转换/连接装置（100），安装有光学元件的安装板（310）和连接到安装板的光连接器（400）光连接到光学元件，光连接器（400）布置在与安装板（310）的安装表面（310b）相对的表面（310a）上，并且光学元件（320）被暴露。光电转换/连接装置（100）包括具有主表面（210a）的主板（210）和安装在母板主表面上的电连接器（220）。电连接器（220）可拆卸地连接到安装板（310）。

7. 发明授权

US06980043B2 Ferroelectric element and a ferroelectric gate device using the same 有权
标题翻译：铁电元件和使用其的铁电栅极器件
公开(公告)号：US06980043B2
公开(公告)日：2005-12-27
申请号：US11052794
申请日：2005-02-09
申请人： Kenji Toyoda , Takashi Ohtsuka
发明人： Kenji Toyoda , Takashi Ohtsuka
IPC分类号： G11C11/22 , H01L21/8246 , H01L27/105 , H01L29/866 , H03K17/62
CPC分类号： G11C11/22
摘要： A ferroelectric gate device which comprises a ferroelectric capacitor (1), a switching element (2) serving as a resistor or a capacitor depending on the voltage applied, and a field-effect transistor (6) having a source, a drain and a gate, said ferroelectric capacitor (1) having an input terminal (IN) at one end, the other end of said ferroelectric capacitor (1) being connected to one end of said switching element (2), the other end of said switching element (2) being connected to the gate of said field-effect transistor (6), by applying a voltage to said input terminal, said switching element (2) serving as a resistor when a voltage higher than the coercive voltage (Vc) of a ferroelectric substance which said ferroelectric capacitor (1) comprises is applied to said ferroelectric capacitor (1), and by applying a voltage to said input terminal, said switching element (2) serving as a capacitor when a voltage lower than the coercive voltage (Vc) of said ferroelectric substance is applied to said ferroelectric capacitor (1).
摘要翻译：一种铁电栅极器件，包括铁电电容器（1），用作电阻器的开关元件（2）或取决于所施加的电压的电容器;以及具有源极，漏极和栅极的场效应晶体管所述铁电电容器（1）的一端具有输入端（IN），所述铁电电容器（1）的另一端与所述开关元件（2）的一端连接，所述开关元件（2）的另一端）通过向所述输入端子施加电压而连接到所述场效应晶体管（6）的栅极，所述开关元件（2）在高于铁电体的矫顽电压（Vc）的电压时用作电阻器所述铁电电容器（1）包括的所述铁电电容器（1）被施加到所述铁电电容器（1），并且通过向所述输入端子施加电压，所述开关元件（2）当电压低于所述铁电电容器（1）的矫顽电压说ferroelec 三体物质被施加到所述铁电电容器（1）。

8. 发明授权

US06949780B2 Semiconductor device 有权
公开(公告)号：US06949780B2
公开(公告)日：2005-09-27
申请号：US10847323
申请日：2004-05-18
申请人： Michihito Ueda , Kenji Toyoda , Kiyoyuki Morita , Takashi Ohtsuka
发明人： Michihito Ueda , Kenji Toyoda , Kiyoyuki Morita , Takashi Ohtsuka
IPC分类号： H01L27/10 , G11C27/00 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： G11C27/005 , G11C11/54 , H01L2924/0002 , H01L2924/00
摘要： In an electric potential generating device, a source of an N type MIS transistor is mutually connected to that of a P type MIS transistor and also connected to an output terminal. A drain of an N type MIS transistor 54 is connected to a power supply voltage supply portion for supplying power supply voltage VDD, and a drain of the P type MIS transistor is connected to a ground. In addition, a substrate potential of the N type MIS transistor is a ground voltage VSS, and that of a P type MIS transistor 56 is the power supply voltage VDD. Thus, it is constituted as a source follower circuit for taking output out of the source. It is possible, by utilizing this electric potential generating device, to obtain a logic transformation circuit for stably switching between NOR operation and NAND operation.

9. 发明授权

US06859088B2 Ferroelectric element and a ferroelectric gate device using the same 有权
标题翻译：铁电元件和使用其的铁电栅极器件
公开(公告)号：US06859088B2
公开(公告)日：2005-02-22
申请号：US10716670
申请日：2003-11-20
申请人： Kenji Toyoda , Takashi Ohtsuka
发明人： Kenji Toyoda , Takashi Ohtsuka
IPC分类号： G11C11/22 , H01L21/8246 , H01L27/105 , H01L29/866 , H03K17/62 , H03K17/687
CPC分类号： G11C11/22
摘要： A ferroelectric gate device which comprises a ferroelectric capacitor (1), a switching element (2) serving as a resistor of a capacitor depending on the voltage applied, and a field-effect transistor (6) having a source, a drain and a gate, said ferroelectric capacitor (1) having an input terminal (IN) at one end, the other end of said ferroelectric capacitor (1) being connected to one end of said switching element (2), the other end of said switching element (2) being connected to the gate of said field-effect transistor (6), by applying a voltage to said input terminal, said switching element (2) serving as a resistor when a voltage higher than the coercive voltage (Vc) of a ferroelectric substance which said ferroelectric capacitor (1), and by applying a voltage to said input terminal, said switching element (2) serving as a capacitor when a voltage lower than the coercive voltage (Vc) of said ferroelectric substance is applied to said ferroelectric capacitor (1).
摘要翻译：一种强电介质栅极器件，包括铁电电容器（1），根据施加的电压用作电容器的电阻器的开关元件（2）和具有源极，漏极和栅极的场效应晶体管所述铁电电容器（1）的一端具有输入端（IN），所述铁电电容器（1）的另一端与所述开关元件（2）的一端连接，所述开关元件（2）的另一端）通过向所述输入端子施加电压而连接到所述场效应晶体管（6）的栅极，所述开关元件（2）在高于铁电体的矫顽电压（Vc）的电压时用作电阻器所述铁电电容器（1），并且当低于所述铁电体的矫顽电压（Vc）的电压施加到所述铁电电容器时，所述开关元件（2）作为电容器施加电压到所述输入端子， 1）。

10. 发明授权

US06720288B1 Herbicidal compositions and method of using the same 有权
标题翻译：除草剂组合物及其使用方法
公开(公告)号：US06720288B1
公开(公告)日：2004-04-13
申请号：US10069032
申请日：2002-05-28
申请人： Masahiro Kanayama , Tsutomu Mabuchi , Takashi Ohtsuka , Sumitaka Kose
发明人： Masahiro Kanayama , Tsutomu Mabuchi , Takashi Ohtsuka , Sumitaka Kose
IPC分类号： A01N4356
CPC分类号： A01N43/56 , A01N57/20 , A01N61/00 , A01N57/00 , A01N25/30 , A01N57/18 , A01N57/02 , A01N2300/00
摘要： Herbicidal compositions containing as the active ingredients (one or more compounds selected from among light-induced herbicidal compounds and one or more compounds selected from among organoposphorus herbicidal compounds, characterized by containing ethylenediamine alkoxylates and alcohol alkoxylates as surfactants. These herbicidal compositions have an excellent rapid action and exert a remarkable herbicidal effect in a small dose.
摘要翻译：含有作为活性成分的一种或多种化合物（一种或多种选自光诱导的除草化合物和一种或多种选自有机磷除草化合物的化合物的化合物，其特征在于含有乙二胺烷氧基化物和醇烷氧基化物作为表面活性剂，这些除草组合物具有极好的快速作用并以小剂量发挥显着的除草效果。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式