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1. 发明专利

JP2008275179A Combustion system of flame retardant high-viscosity waste such as pcb 有权
标题翻译：阻燃剂高粘度废物等作为PCB的燃烧系统
公开(公告)号：JP2008275179A
公开(公告)日：2008-11-13
申请号：JP2006260725
申请日：2006-09-26
申请人： Takashi Hamada , 尚浜田
发明人： HAMADA TAKASHI
IPC分类号： F23G7/00 , A62D3/38 , A62D101/22 , B01D53/70 , B09B3/00 , F23G5/033 , F23G5/16 , F23G5/20 , F23J15/00 , F23J15/06
CPC分类号： Y02W30/82 , Y02W30/822
摘要： PROBLEM TO BE SOLVED: To solve problems in a conventional combustion (treatment) system of a flame-retardant high-viscosity waste such as PCB which is mainly treated by chemical decomposition treatment technology that the chemical treatment method needs a large amount of initial running costs, on the other hand, an incineration treatment method is difficult in removal of a harmful substance in an exhaust gas, in particular, tar, so that it is difficult to actually execute the method, and agreement of residents of a construction area and/or its environment can not be obtained. SOLUTION: This combustion system of flame-retardant high-viscosity waste such as PCB is composed of a crusher for crushing an electric device incorporating PCB, a viscosity adjustment separating device for separating the crushed electric device and PCB, lowering the viscosity of PCB and performing separating treatment under a negative pressure, a main combustion chamber connected through a temperature retaining pipe disposed in the viscosity adjustment separating device, a deposit burner connected through a pipe disposed in the viscosity adjustment separating device, and an exhaust gas temperature decreasing chamber receiving exhaust gases of the main combustion chamber and the deposit burner. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了解决主要通过化学分解处理技术处理的阻燃高粘度废物如PCB的常规燃烧（处理）系统中的问题，化学处理方法需要大量的初始运行成本另一方面，焚烧处理方法难以排除废气中的有害物质，特别是焦油，难以实际执行方法，并且建筑面积居民的同意和/或其环境无法获得。解决方案：这种阻燃高粘度废物如PCB的燃烧系统由用于破碎装有PCB的电气装置的破碎机，用于分离破碎的电气装置和PCB的粘度调节分离装置，降低粘度的粘度 PCB，在负压下进行分离处理，通过设置在粘度调节分离装置中的保温管连接的主燃烧室，通过设置在粘度调节分离装置中的管连接的沉积燃烧器和排气温度降低室接收主燃烧室和沉积燃烧器的废气。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2006038344A Combustion apparatus of flame retardant waste material and the like and its method 有权
标题翻译：阻燃废物的燃烧装置及其类似方法
公开(公告)号：JP2006038344A
公开(公告)日：2006-02-09
申请号：JP2004218903
申请日：2004-07-27
申请人： Takashi Hamada , 尚浜田
发明人： HAMADA TAKASHI
IPC分类号： F23G7/12 , F23C99/00 , F23G5/033 , F23G5/44
摘要： PROBLEM TO BE SOLVED: To provide a structure capable of achieving size reduction and cost cut required for combustion apparatus of a flame retardant waste material and the like.
SOLUTION: A flame retardant pulverized body pulverized by a pulverizer is introduced to a reservoir tank equipped with an excess air exhaustion port by a pneumatic conveying means. After accumulated on its bottom part, the flame retardant pulverized body is conveyed to the exhaustion port by a transfer means and introduced to a separator 5 by a fan 3 for the pneumatic conveyance and separated into the flame retardant pulverized body and air by specific gravity separation. The flame retardant pulverized body is introduced to a combustion furnace 6 with a main burner 7 and burnt with a heat source of the main burner 7 and combustion gas is exhausted from an injection port of the main burner 7.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供能够实现阻燃废料等的燃烧装置所需的尺寸减小和成本削减的结构。解决方案：将通过粉碎机粉碎的阻燃粉碎体通过气动输送装置引入配备有过量排气口的储罐中。在其底部堆积后，通过转印装置将阻燃粉碎体输送到排气口，并通过用于气动输送的风扇3将其引入分离器5，并通过比重分离分离成阻燃粉碎体和空气。将阻燃粉碎体用主燃烧器7引入到燃烧炉6中，并用主燃烧器7的热源燃烧，燃烧气体从主燃烧器7的喷射口排出。版权所有（C））2006，JPO＆NCIPI

3. 发明授权

US09728693B2 Light-emitting device comprising partition including overhang portion 有权
公开(公告)号：US09728693B2
公开(公告)日：2017-08-08
申请号：US14054021
申请日：2013-10-15
申请人： Kaoru Hatano , Takashi Hamada , Kikuo Miyata , Hiromitsu Katsui , Shoji Okazaki
发明人： Kaoru Hatano , Takashi Hamada , Kikuo Miyata , Hiromitsu Katsui , Shoji Okazaki
IPC分类号： H01L27/15 , H01L33/62 , H01L33/00 , H01L51/50 , H01L51/52 , H01L27/32
CPC分类号： H01L33/62 , H01L27/3209 , H01L27/322 , H01L27/3246 , H01L33/005 , H01L51/5044 , H01L51/5278 , H01L2924/0002 , H01L2924/00
摘要： Occurrence of a crosstalk phenomenon in a light-emitting device including a tandem element is suppressed. A light-emitting device includes: lower electrodes over an insulating layer; a partition over a portion between the lower electrodes, which includes an overhang portion over an end portion of each of the lower electrodes; a first light-emitting unit over each of the lower electrodes and the partition; an intermediate layer over the first light-emitting unit; a second light-emitting unit over the intermediate layer; and an upper electrode over the second light-emitting unit. The distance between the overhang portion and each of the lower electrodes is larger than the total thickness of the first light-emitting unit and the intermediate layer over the lower electrode.

4. 发明申请

US20120299889A1 DEVICE SUBSTRATE, LIGHT EMITTING DEVICE AND DRIVING METHOD OF LIGHT EMITTING DEVICE 有权
标题翻译：装置基板，发光装置和发光装置的驱动方法
公开(公告)号：US20120299889A1
公开(公告)日：2012-11-29
申请号：US13570478
申请日：2012-08-09
申请人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Mitsuaki OSAME , Takashi HAMADA , Tamae TAKANO , Yu YAMAZAKI , Aya ANZAI
发明人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Mitsuaki OSAME , Takashi HAMADA , Tamae TAKANO , Yu YAMAZAKI , Aya ANZAI
IPC分类号： G09G5/00 , H01L27/15
CPC分类号： H01L27/1214 , G09G3/3233 , G09G3/3266 , G09G3/3291 , G09G2300/0426 , G09G2300/0814 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2320/0233 , H01L27/3262 , H01L2251/5323
摘要： A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series.
摘要翻译：一种发光器件，包括发光元件和第一晶体管，以及第二晶体管，控制要在像素中提供给所述发光元件的电流; 第一个晶体管正常工作; 第二晶体管正常断开; 第一晶体管的沟道长度比沟道宽度长; 第二晶体管的沟道长度等于或短于其沟道长度; 第一晶体管和第二晶体管的栅电极彼此连接; 第一晶体管和第二晶体管具有相同的极性; 并且发光元件，第一晶体管和第二晶体管都全部串联连接。

5. 发明授权

US08242508B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08242508B2
公开(公告)日：2012-08-14
申请号：US13226803
申请日：2011-09-07
申请人： Takashi Hamada , Yasuyuki Arai
发明人： Takashi Hamada , Yasuyuki Arai
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L27/01 , H01L27/12
CPC分类号： H01L27/124 , G02F1/13454 , H01L27/1214 , H01L27/127 , H01L29/42384
摘要： A semiconductor device includes a thin film transistor. The thin film transistor includes a semiconductor film over a substrate, in which the semiconductor film includes a pair of first regions, a pair of second regions interposed between the pair of first regions, and a channel formation region interposed between the pair of second regions. A concentration of an impurity in the pair of second regions is smaller than a concentration of the impurity in the pair of first regions. The thin film transistor includes an insulating film, in which a portion of the insulating film is provided over the semiconductor film. The thin film transistor includes a conductive film over the portion, and the conductive film includes a taper shape.
摘要翻译：半导体器件包括薄膜晶体管。薄膜晶体管包括在基板上的半导体膜，其中半导体膜包括一对第一区域，插入在该对第一区域之间的一对第二区域和插入在该对第二区域之间的沟道形成区域。一对第二区域中的杂质浓度小于该对第一区域中的杂质浓度。薄膜晶体管包括绝缘膜，其中绝缘膜的一部分设置在半导体膜上。薄膜晶体管在该部分上包括导电膜，并且导电膜包括锥形。

6. 发明申请

US20110049588A1 Semiconductor Device and Manufacturing Method Thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110049588A1
公开(公告)日：2011-03-03
申请号：US12857820
申请日：2010-08-17
申请人： Atsuo Isobe , Noriko Harima , Noriko Matsumoto , Akihisa Shimomura , Kosei Noda , Kazuko Yamawaki , Yoshiyuki Kurokawa , Takayuki Ikeda , Takashi Hamada
发明人： Atsuo Isobe , Noriko Harima , Noriko Matsumoto , Akihisa Shimomura , Kosei Noda , Kazuko Yamawaki , Yoshiyuki Kurokawa , Takayuki Ikeda , Takashi Hamada
IPC分类号： H01L31/101 , H01L31/18
CPC分类号： H01L31/103 , H01L27/14643 , H01L31/105 , H01L31/1804 , H01L31/1864 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion element with excellent characteristics. An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion device with excellent characteristic through a simple process. A semiconductor device is provided, which includes a light-transmitting substrate; an insulating layer over the light-transmitting substrate; and a photoelectric conversion element over the insulating layer. The photoelectric conversion element includes a single crystal semiconductor layer including a semiconductor region having an effect of photoelectric conversion, a semiconductor region having a first conductivity type, and a semiconductor region having a second conductivity type; a first electrode electrically connected to the semiconductor region having the first conductivity type; and a second electrode electrically connected to the semiconductor region having the second conductivity type.
摘要翻译：所公开的发明的一个实施例的目的是提供一种包括具有优异特性的光电转换元件的半导体器件。所公开的发明的一个实施例的目的是提供一种包括通过简单工艺具有优异特性的光电转换装置的半导体器件。提供了一种半导体器件，其包括透光衬底; 透光基板上的绝缘层; 和绝缘层上的光电转换元件。光电转换元件包括具有具有光电转换效果的半导体区域，具有第一导电类型的半导体区域和具有第二导电类型的半导体区域的单晶半导体层; 电连接到具有第一导电类型的半导体区域的第一电极; 以及电连接到具有第二导电类型的半导体区域的第二电极。

7. 发明申请

US20110042768A1 Semiconductor Device and Method for Manufacturing Semiconductor Device 有权
标题翻译：半导体器件及半导体器件制造方法
公开(公告)号：US20110042768A1
公开(公告)日：2011-02-24
申请号：US12859446
申请日：2010-08-19
申请人： Yoshiyuki Kurokawa , Takayuki Ikeda , Munehiro Kozuma , Hikaru Tamura , Kazuko Yamawaki , Takashi Hamada , Shunpei Yamazaki
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Munehiro Kozuma , Hikaru Tamura , Kazuko Yamawaki , Takashi Hamada , Shunpei Yamazaki
IPC分类号： H01L31/0232 , H01L21/71
CPC分类号： G09F9/33 , H01L31/0203 , H01L31/02325
摘要： An object is to prevent a reduction of definition (or resolution) (a peripheral blur) caused when reflected light enters a photoelectric conversion element arranged at a periphery of a photoelectric conversion element arranged at a predetermined address. A semiconductor device is manufactured through the steps of: forming a structure having a first light-transmitting substrate, a plurality of photoelectric conversion elements over the first light-transmitting substrate, a second light-transmitting substrate provided so as to face the plurality of photoelectric conversion elements, a sealant arranged so as to bond the first light-transmitting substrate and the second light-transmitting substrate and surround the plurality of photoelectric conversion elements; and thinning the first light-transmitting substrate by wet etching.
摘要翻译：目的是防止当反射光进入布置在布置在预定地址处的光电转换元件的周围的光电转换元件时引起的定义（或分辨率）（外围模糊）的降低。通过以下步骤制造半导体器件：在第一透光衬底上形成具有第一透光衬底，多个光电转换元件的结构，设置成面对多个光电转换元件的第二透光衬底转换元件，密封剂，其被布置成结合第一透光性基板和第二透光性基板，并且包围多个光电转换元件; 并通过湿蚀刻使第一透光衬底变薄。

8. 发明授权

US07764880B2 Pickup apparatus 有权
标题翻译：拾取装置
公开(公告)号：US07764880B2
公开(公告)日：2010-07-27
申请号：US12026059
申请日：2008-02-05
申请人： Takashi Hamada
发明人： Takashi Hamada
IPC分类号： G03B15/05
CPC分类号： G03B7/17 , G03B7/16 , G03B7/28 , G03B15/05 , G03B2215/05
摘要： An image pickup apparatus, for controlling actual flash amount at the time of exposure based on an amount of reflected light from a predetermined metering region of a screen, comprises a first screen dividing section for dividing the screen into a first region, constituting a candidate for the metering region, and a second region other than that by comparing first feature data of image data that has been acquired by performing pre-flash before actual flash and second feature data of image data taken without performing pre-flash, a second screen dividing section for dividing the screen into a third region, being a region of an image having a predetermined feature, and a fourth region other than that, an image evaluation section for evaluating whether to include in the metering region or remove from the metering region based on different evaluation criteria according to whether the image of the third region or the fourth region belongs to the first region, or belongs to the second region, and a flash amount control section for controlling actual flash amount based on reflected light amount from regions that have been included in the metering region by the image evaluation section.
摘要翻译：一种用于基于来自屏幕的预定计量区域的反射光量来控制曝光时的实际闪光量的图像拾取装置，包括：第一屏幕分割部分，用于将屏幕分成第一区域，构成第一区域的候选测量区域和除了通过在实际闪光之前执行预闪光而获取的图像数据的第一特征数据和不执行预闪光的第二图像数据的特征数据之外的第二区域，第二屏幕分割部分用于将屏幕划分为第三区域，作为具有预定特征的图像的区域，以及除此之外的第四区域，图像评估部分，用于评估是否包括在计量区域中或者基于不同的测量区域移除计量区域根据第三区域或第四区域的图像是否属于第一区域，或属于第二区域的评估标准以及闪光量控制部分，用于基于由图像评估部分已经包括在测光区域中的区域的反射光量来控制实际闪光量。

9. 发明申请

US20100029025A1 Production Apparatus and Method of Producing a Light-Emitting Device by Using the Same Apparatus 有权
标题翻译：生产装置及使用相同装置制造发光装置的方法
公开(公告)号：US20100029025A1
公开(公告)日：2010-02-04
申请号：US12576694
申请日：2009-10-09
申请人： Shunpei Yamazaki , Takashi Hamada , Satoshi Seo
发明人： Shunpei Yamazaki , Takashi Hamada , Satoshi Seo
IPC分类号： H01L21/28 , H01L33/00
CPC分类号： H01L51/0005
摘要： The present invention relates to a method for manufacturing a light-emitting device. At least one of a light-emitting film forming step, a conductive film forming step and an insulating film forming step is carried out while holding a substrate in a manner that an angle subtended by a surface of the substrate and the direction of gravity is within a range of from 0 to 30°.
摘要翻译：本发明涉及一种制造发光器件的方法。进行发光成膜工序，导电膜形成工序和绝缘膜形成工序中的至少一个，同时以基板的表面与重力方向对向的角度保持基板的方式进行范围为0至30°。

10. 发明授权

US07141823B2 Thin film transistor semiconductor device 有权
标题翻译：薄膜晶体管半导体器件
公开(公告)号：US07141823B2
公开(公告)日：2006-11-28
申请号：US10254670
申请日：2002-09-26
申请人： Takashi Hamada , Hidekazu Miyairi , Takuya Matsuo , Naoki Makita , Katsumi Nomura
发明人： Takashi Hamada , Hidekazu Miyairi , Takuya Matsuo , Naoki Makita , Katsumi Nomura
IPC分类号： H01L31/072
CPC分类号： H01L29/78696 , H01L27/12 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L29/78675 , H01L2029/7863
摘要： In a TFT with a GOLD structure, there is provided a structure which is able to improve an operating characteristic and reliability and reduce an off current value in order to reduce power consumption of a semiconductor device. The surface of LDD region (4) overlapped with a portion (7a) of a gate electrode through a gate insulating film (6) interposed therebetween is extremely flattened. Thus, it is possible to obtain a TFT structure which is capable of reducing a parasitic capacitance in the LDD region of the TFT with the GOLD structure, reducing an off current value, improving reliability, and enabling high speed operation.
摘要翻译：在具有GOLD结构的TFT中，提供了能够提高工作特性和可靠性并降低截止电流值以降低半导体器件的功耗的结构。通过栅绝缘膜（6）与栅电极的部分（7a）重叠的LDD区（4）的表面极其平坦化。因此，可以获得能够降低具有GOLD结构的TFT的LDD区域中的寄生电容的TFT结构，从而降低截止电流值，提高可靠性并实现高速运行。

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