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1. 发明专利

JP2005270617A Stick for walker 审中-公开
标题翻译： STICK FOR WALKER
公开(公告)号：JP2005270617A
公开(公告)日：2005-10-06
申请号：JP2004141703
申请日：2004-03-25
申请人： Kazuko Yamawaki , 和子山脇
发明人： YAMAWAKI KAZUKO
IPC分类号： A45B9/04 , A45B7/00 , A61H3/00
摘要： PROBLEM TO BE SOLVED: To provide a stick for a walker by which a user's body is stably supported to enable smooth walking regardless of a road face condition by freely selecting an angle between a stick body and a ferrule face and suppressing fluctuation of a grip part by a human body side face part and an arm and whose body can be made into an upright immovable form for use as the case may be.
SOLUTION: This stick 100 for walker is equipped with a ferrule plate 12 with a flat surface in the lower part of a bar shape stick body 1. The stick body 1 and the ferrule plate 12 are connected by a ball shaft 6 set on the upper face of the ferrule plate 12 and a pipe adapter 9 with a ball cramp part 91 having a forked tip end and connected to the lower end of the stick body 1. Thus the stick body 1 can be freely inclined relative to the ferrule plate 12.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供用于使用者的身体被稳定地支撑的行走器的棍子，以便通过自由地选择杆体和套圈面之间的角度来抑制波动，从而能够平稳地行走，而不管路面状况如何由人体侧面部和手臂构成的抓握部，并且其主体可以制成直立不动的形式，作为情况可以使用。解决方案：用于步行器的该棒100在条形棒体1的下部配备有具有平坦表面的套圈板12.杆体1和套圈板12通过球轴6连接在套圈板12的上表面和管接头9之间，具有一个具有叉形末端的球形夹紧部分91，并连接到棒体1的下端。因此，棒状体1可以相对于套圈自由地倾斜版权所有（C）2006，JPO＆NCIPI

2. 发明授权

US08633051B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US08633051B2
公开(公告)日：2014-01-21
申请号：US12859446
申请日：2010-08-19
申请人： Yoshiyuki Kurokawa , Takayuki Ikeda , Munehiro Kozuma , Hikaru Tamura , Kazuko Yamawaki , Takashi Hamada , Shunpei Yamazaki
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Munehiro Kozuma , Hikaru Tamura , Kazuko Yamawaki , Takashi Hamada , Shunpei Yamazaki
IPC分类号： H01L31/0232 , H01L21/71
CPC分类号： G09F9/33 , H01L31/0203 , H01L31/02325
摘要： An object is to prevent a reduction of definition (or resolution) (a peripheral blur) caused when reflected light enters a photoelectric conversion element arranged at a periphery of a photoelectric conversion element arranged at a predetermined address. A semiconductor device is manufactured through the steps of: forming a structure having a first light-transmitting substrate, a plurality of photoelectric conversion elements over the first light-transmitting substrate, a second light-transmitting substrate provided so as to face the plurality of photoelectric conversion elements, a sealant arranged so as to bond the first light-transmitting substrate and the second light-transmitting substrate and surround the plurality of photoelectric conversion elements; and thinning the first light-transmitting substrate by wet etching.
摘要翻译：目的是防止当反射光进入布置在布置在预定地址处的光电转换元件的周围的光电转换元件时引起的定义（或分辨率）（外围模糊）的降低。通过以下步骤制造半导体器件：在第一透光衬底上形成具有第一透光衬底，多个光电转换元件的结构，设置成面对多个光电转换元件的第二透光衬底转换元件，密封剂，其被布置成结合第一透光性基板和第二透光性基板，并且包围多个光电转换元件; 并通过湿蚀刻使第一透光衬底变薄。

3. 发明授权

US08426231B2 Method for manufacturing semiconductor device including a photoelectric conversion element 有权
标题翻译：包括光电转换元件的半导体器件的制造方法
公开(公告)号：US08426231B2
公开(公告)日：2013-04-23
申请号：US12857820
申请日：2010-08-17
申请人： Atsuo Isobe , Noriko Harima , Noriko Matsumoto , Akihisa Shimomura , Kosei Noda , Kazuko Yamawaki , Yoshiyuki Kurokawa , Takayuki Ikeda , Takashi Hamada
发明人： Atsuo Isobe , Noriko Harima , Noriko Matsumoto , Akihisa Shimomura , Kosei Noda , Kazuko Yamawaki , Yoshiyuki Kurokawa , Takayuki Ikeda , Takashi Hamada
IPC分类号： H01L31/18
CPC分类号： H01L31/103 , H01L27/14643 , H01L31/105 , H01L31/1804 , H01L31/1864 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion element with excellent characteristics. An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion device with excellent characteristic through a simple process. A semiconductor device is provided, which includes a light-transmitting substrate; an insulating layer over the light-transmitting substrate; and a photoelectric conversion element over the insulating layer. The photoelectric conversion element includes a single crystal semiconductor layer including a semiconductor region having an effect of photoelectric conversion, a semiconductor region having a first conductivity type, and a semiconductor region having a second conductivity type; a first electrode electrically connected to the semiconductor region having the first conductivity type; and a second electrode electrically connected to the semiconductor region having the second conductivity type.
摘要翻译：所公开的发明的一个实施例的目的是提供一种包括具有优异特性的光电转换元件的半导体器件。所公开的发明的一个实施例的目的是提供一种包括通过简单工艺具有优异特性的光电转换装置的半导体器件。提供了一种半导体器件，其包括透光衬底; 透光基板上的绝缘层; 和绝缘层上的光电转换元件。光电转换元件包括具有具有光电转换效果的半导体区域，具有第一导电类型的半导体区域和具有第二导电类型的半导体区域的单晶半导体层; 电连接到具有第一导电类型的半导体区域的第一电极; 以及电连接到具有第二导电类型的半导体区域的第二电极。

4. 发明申请

US20110049588A1 Semiconductor Device and Manufacturing Method Thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110049588A1
公开(公告)日：2011-03-03
申请号：US12857820
申请日：2010-08-17
申请人： Atsuo Isobe , Noriko Harima , Noriko Matsumoto , Akihisa Shimomura , Kosei Noda , Kazuko Yamawaki , Yoshiyuki Kurokawa , Takayuki Ikeda , Takashi Hamada
发明人： Atsuo Isobe , Noriko Harima , Noriko Matsumoto , Akihisa Shimomura , Kosei Noda , Kazuko Yamawaki , Yoshiyuki Kurokawa , Takayuki Ikeda , Takashi Hamada
IPC分类号： H01L31/101 , H01L31/18
CPC分类号： H01L31/103 , H01L27/14643 , H01L31/105 , H01L31/1804 , H01L31/1864 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion element with excellent characteristics. An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion device with excellent characteristic through a simple process. A semiconductor device is provided, which includes a light-transmitting substrate; an insulating layer over the light-transmitting substrate; and a photoelectric conversion element over the insulating layer. The photoelectric conversion element includes a single crystal semiconductor layer including a semiconductor region having an effect of photoelectric conversion, a semiconductor region having a first conductivity type, and a semiconductor region having a second conductivity type; a first electrode electrically connected to the semiconductor region having the first conductivity type; and a second electrode electrically connected to the semiconductor region having the second conductivity type.
摘要翻译：所公开的发明的一个实施例的目的是提供一种包括具有优异特性的光电转换元件的半导体器件。所公开的发明的一个实施例的目的是提供一种包括通过简单工艺具有优异特性的光电转换装置的半导体器件。提供了一种半导体器件，其包括透光衬底; 透光基板上的绝缘层; 和绝缘层上的光电转换元件。光电转换元件包括具有具有光电转换效果的半导体区域，具有第一导电类型的半导体区域和具有第二导电类型的半导体区域的单晶半导体层; 电连接到具有第一导电类型的半导体区域的第一电极; 以及电连接到具有第二导电类型的半导体区域的第二电极。

5. 发明申请

US20110042768A1 Semiconductor Device and Method for Manufacturing Semiconductor Device 有权
标题翻译：半导体器件及半导体器件制造方法
公开(公告)号：US20110042768A1
公开(公告)日：2011-02-24
申请号：US12859446
申请日：2010-08-19
申请人： Yoshiyuki Kurokawa , Takayuki Ikeda , Munehiro Kozuma , Hikaru Tamura , Kazuko Yamawaki , Takashi Hamada , Shunpei Yamazaki
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Munehiro Kozuma , Hikaru Tamura , Kazuko Yamawaki , Takashi Hamada , Shunpei Yamazaki
IPC分类号： H01L31/0232 , H01L21/71
CPC分类号： G09F9/33 , H01L31/0203 , H01L31/02325
摘要： An object is to prevent a reduction of definition (or resolution) (a peripheral blur) caused when reflected light enters a photoelectric conversion element arranged at a periphery of a photoelectric conversion element arranged at a predetermined address. A semiconductor device is manufactured through the steps of: forming a structure having a first light-transmitting substrate, a plurality of photoelectric conversion elements over the first light-transmitting substrate, a second light-transmitting substrate provided so as to face the plurality of photoelectric conversion elements, a sealant arranged so as to bond the first light-transmitting substrate and the second light-transmitting substrate and surround the plurality of photoelectric conversion elements; and thinning the first light-transmitting substrate by wet etching.
摘要翻译：目的是防止当反射光进入布置在布置在预定地址处的光电转换元件的周围的光电转换元件时引起的定义（或分辨率）（外围模糊）的降低。通过以下步骤制造半导体器件：在第一透光衬底上形成具有第一透光衬底，多个光电转换元件的结构，设置成面对多个光电转换元件的第二透光衬底转换元件，密封剂，其被布置成结合第一透光性基板和第二透光性基板，并且包围多个光电转换元件; 并通过湿蚀刻使第一透光衬底变薄。

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