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1. 发明授权

US08357551B2 Method of manufacturing light emitting device 有权
公开(公告)号：US08357551B2
公开(公告)日：2013-01-22
申请号：US13360896
申请日：2012-01-30
申请人： Shunpei Yamazaki , Takashi Hamada , Satoshi Seo
发明人： Shunpei Yamazaki , Takashi Hamada , Satoshi Seo
IPC分类号： H01L21/00
CPC分类号： H01L33/005 , H01L27/3211 , H01L51/0005 , H01L51/0021 , H01L51/56 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.

2. 发明授权

US08242988B2 Device substrate, light emitting device and driving method of light emitting device 有权
标题翻译：装置基板，发光装置及发光装置的驱动方法
公开(公告)号：US08242988B2
公开(公告)日：2012-08-14
申请号：US12915086
申请日：2010-10-29
申请人： Shunpei Yamazaki , Masayuki Sakakura , Mitsuaki Osame , Takashi Hamada , Tamae Takano , Yu Yamazaki , Aya Anzai
发明人： Shunpei Yamazaki , Masayuki Sakakura , Mitsuaki Osame , Takashi Hamada , Tamae Takano , Yu Yamazaki , Aya Anzai
IPC分类号： G09G3/30
CPC分类号： H01L27/1214 , G09G3/3233 , G09G3/3266 , G09G3/3291 , G09G2300/0426 , G09G2300/0814 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2320/0233 , H01L27/3262 , H01L2251/5323
摘要： A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series.
摘要翻译：一种发光器件，包括发光元件和第一晶体管，以及第二晶体管，控制要在像素中提供给所述发光元件的电流; 第一个晶体管正常工作; 第二晶体管正常断开; 第一晶体管的沟道长度比沟道宽度长; 第二晶体管的沟道长度等于或短于其沟道长度; 第一晶体管和第二晶体管的栅电极彼此连接; 第一晶体管和第二晶体管具有相同的极性; 并且发光元件，第一晶体管和第二晶体管都全部串联连接。

3. 发明授权

US08197295B2 Production apparatus and method of producing a light-emitting device by using the same apparatus 有权
标题翻译：通过使用相同的装置制造发光装置的制造装置和方法
公开(公告)号：US08197295B2
公开(公告)日：2012-06-12
申请号：US13083098
申请日：2011-04-08
申请人： Shunpei Yamazaki , Takashi Hamada , Satoshi Seo
发明人： Shunpei Yamazaki , Takashi Hamada , Satoshi Seo
IPC分类号： H01J9/00
CPC分类号： H01L51/0005
摘要： The present invention relates to a method for manufacturing a light-emitting device. At least one of a light-emitting film forming step, a conductive film forming step and an insulating film forming step is carried out while holding a substrate in a manner that an angle subtended by a surface of the substrate and the direction of gravity is within a range of from 0 to 30°.
摘要翻译：本发明涉及一种制造发光器件的方法。进行发光成膜工序，导电膜形成工序和绝缘膜形成工序中的至少一个，同时以基板的表面与重力方向对向的角度保持基板的方式进行范围为0至30°。

4. 发明申请

US20110281038A1 Production Apparatus and Method of producing a Light-Emitting Device by Using the Same Apparatus 有权
标题翻译：生产装置及使用相同装置制造发光装置的方法
公开(公告)号：US20110281038A1
公开(公告)日：2011-11-17
申请号：US13083098
申请日：2011-04-08
申请人： Shunpei Yamazaki , Takashi Hamada , Satoshi Seo
发明人： Shunpei Yamazaki , Takashi Hamada , Satoshi Seo
IPC分类号： B05D3/12 , C23C14/34
CPC分类号： H01L51/0005
摘要： The present invention relates to a method for manufacturing a light-emitting device. At least one of a light-emitting film forming step, a conductive film forming step and an insulating film forming step is carried out while holding a substrate in a manner that an angle subtended by a surface of the substrate and the direction of gravity is within a range of from 0 to 30°.
摘要翻译：本发明涉及一种制造发光器件的方法。进行发光成膜工序，导电膜形成工序和绝缘膜形成工序中的至少一个，同时以基板的表面与重力方向对向的角度保持基板的方式进行范围为0至30°。

5. 发明授权

US08017951B2 Semiconductor device including a conductive film having a tapered shape 有权
标题翻译：包括具有锥形形状的导电膜的半导体装置
公开(公告)号：US08017951B2
公开(公告)日：2011-09-13
申请号：US12424807
申请日：2009-04-16
申请人： Takashi Hamada , Yasuyuki Arai
发明人： Takashi Hamada , Yasuyuki Arai
IPC分类号： H01L27/12
CPC分类号： H01L27/124 , G02F1/13454 , H01L27/1214 , H01L27/127 , H01L29/42384
摘要： TFT structures optimal for driving conditions of a pixel portion and driving circuits are obtained using a small number of photo masks. First through third semiconductor films are formed on a first insulating film. First shape first, second, and third electrodes are formed on the first through third semiconductor films. The first shape first, second, third electrodes are used as masks in first doping treatment to form first concentration impurity regions of one conductivity type in the first through third semiconductor films. Second shape first, second, and third electrodes are formed from the first shape first, second, and third electrodes. A second concentration impurity region of the one conductivity type which overlaps the second shape second electrode is formed in the second semiconductor film in second doping treatment. Also formed in the second doping treatment are third concentration impurity regions of the one conductivity type which are placed in the first and second semiconductor films. Fourth and Fifth concentration impurity regions having the other conductivity type that is opposite to the one conductivity type are formed in the third semiconductor film in third doping treatment.
摘要翻译：使用少量的光掩模获得对像素部分和驱动电路的驱动条件最佳的TFT结构。第一至第三半导体膜形成在第一绝缘膜上。第一形状的第一，第二和第三电极形成在第一至第三半导体膜上。在第一掺杂处理中，第一形状的第一，第二，第三电极用作掩模，以在第一至第三半导体膜中形成一种导电类型的第一浓度杂质区。第二形状的第一，第二和第三电极由第一形状的第一，第二和第三电极形成。在第二掺杂处理中，在第二半导体膜中形成与第二形状的第二电极重叠的一种导电类型的第二浓度杂质区。在第二掺杂处理中也形成为放置在第一和第二半导体膜中的一种导电类型的第三浓度杂质区。在第三掺杂处理中，在第三半导体膜中形成具有与一种导电类型相反的另一导电类型的第四和第五浓度杂质区。

6. 发明授权

US07589698B2 Display device, semiconductor device, and electronic device 有权
标题翻译：显示装置，半导体装置和电子装置
公开(公告)号：US07589698B2
公开(公告)日：2009-09-15
申请号：US10801542
申请日：2004-03-17
申请人： Mitsuaki Osame , Aya Anzai , Yu Yamazaki , Tamae Takano , Takashi Hamada
发明人： Mitsuaki Osame , Aya Anzai , Yu Yamazaki , Tamae Takano , Takashi Hamada
IPC分类号： G09G3/30
CPC分类号： H01L29/78696 , H01L27/1296
摘要： When an electrical characteristic of the TFT varies, display unevenness such as brightness unevenness or gradation unevenness is occurred in a display image. According to the present invention, a display device in which variation of an electrical characteristic of a TFT is reduced, and display unevenness is reduced is provided. To obtain the display device, the fluctuation ratio of ON current value in a saturation region of adjacent TFTs is set to be equal to or less than ±12% in a TFT array substrate in which a plurality of TFTs are arranged.
摘要翻译：当TFT的电特性变化时，在显示图像中发生诸如亮度不均匀或灰度不匀的显示不均匀。根据本发明，提供了一种其中TFT的电特性的变化减小并且显示不均匀性减小的显示装置。为了获得显示装置，在布置多个TFT的TFT阵列基板中，将相邻TFT的饱和区域中的导通电流值的波动比设定为±12％以下。

7. 发明授权

US07520254B2 Control apparatus and a control method thereof 有权
标题翻译：控制装置及其控制方法
公开(公告)号：US07520254B2
公开(公告)日：2009-04-21
申请号：US11601726
申请日：2006-11-20
申请人： Takashi Hamada
发明人： Takashi Hamada
IPC分类号： F01L1/34
CPC分类号： F02D41/0002 , F01L13/0063 , F01L2001/0537 , F01L2105/00 , F01L2820/032 , F02D13/02 , F02D41/008 , F02D41/1443 , F02D2041/001 , Y02T10/18 , Y02T10/42
摘要： A control apparatus for an internal combustion engine including a plurality of cylinders and a changing mechanism the changes a timing at which an intake valve provided for each of the cylinders closes, comprising: a control portion that controls the changing mechanism so that the intake valve closes at a timing within a predetermined range from a bottom dead center; and a detection portion that detects at least one of an air-fuel ratio of each of the cylinders and a value corresponding to the air-fuel ratio when the changing mechanism is controlled so that the intake valve closes at the timing within the predetermined range from the bottom dead center.
摘要翻译：一种用于内燃机的控制装置，包括多个气缸和改变机构，改变了为每个气缸设置的进气门关闭的时间，该控制装置包括：控制部分，其控制改变机构以使进气门关闭在来自下止点的预定范围内的时刻; 以及检测部，其检测所述气缸的空燃比中的至少一个以及当所述变更机构被控制时与所述空燃比对应的值，使得所述进气门在所述预定范围内的定时闭合下死点。

8. 发明授权

US07198992B2 Method of manufacturing a semiconductor device comprising doping steps using gate electrodes and resists as masks 有权
标题翻译：制造半导体器件的方法包括使用栅电极和抗蚀剂作为掩模的掺杂步骤
公开(公告)号：US07198992B2
公开(公告)日：2007-04-03
申请号：US10867515
申请日：2004-06-14
申请人： Takashi Hamada , Satoshi Murakami , Shunpei Yamazaki , Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Toru Takayama
发明人： Takashi Hamada , Satoshi Murakami , Shunpei Yamazaki , Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Toru Takayama
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/02672 , G02F1/13454 , H01L21/2022 , H01L21/3226 , H01L27/12 , H01L27/1248 , H01L27/1277 , H01L27/1288 , H01L27/3246 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L51/5253 , H01L51/56
摘要： The present invention is characterized in that a semiconductor film containing a rare gas element is formed on a crystalline semiconductor film obtained by using a catalytic element via a barrier layer, and the catalytic element is moved from the crystalline semiconductor film to the semiconductor film containing a rare gas element by a heat treatment. Furthermore, a first impurity region and a second impurity region formed in a semiconductor layer of a first n-channel TFT are provided outside a gate electrode. A third impurity region formed in a semiconductor layer of a second n-channel TFT is provided so as to be partially overlapped with a gate electrode. A third impurity region is provided outside a gate electrode. A fourth impurity region formed in a semiconductor layer of a p-channel TFT is provided so as to be partially overlapped with a gate electrode. A fifth impurity region is provided outside a gate electrode.
摘要翻译：本发明的特征在于，在通过阻挡层使用催化元件而获得的结晶半导体膜上形成含有稀有气体元素的半导体膜，催化元素从结晶半导体膜移动到含有稀有气体元素通过热处理。此外，形成在第一n沟道TFT的半导体层中的第一杂质区域和第二杂质区域设置在栅电极的外侧。形成在第二n沟道TFT的半导体层中的第三杂质区域设置成与栅电极部分重叠。第三杂质区域设置在栅极外部。形成在p沟道TFT的半导体层中的第四杂质区域设置成与栅电极部分重叠。第五杂质区域设置在栅极外部。

9. 发明授权

US07163836B2 Method of manufacturing light emitting device 有权
标题翻译：制造发光器件的方法
公开(公告)号：US07163836B2
公开(公告)日：2007-01-16
申请号：US11036299
申请日：2005-01-14
申请人： Shunpei Yamazaki , Takashi Hamada , Satoshi Seo
发明人： Shunpei Yamazaki , Takashi Hamada , Satoshi Seo
IPC分类号： H01L21/00
CPC分类号： H01L33/005 , H01L27/3211 , H01L51/0005 , H01L51/0021 , H01L51/56 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.
摘要翻译：提供一种制造发光器件的方法，其需要低成本，容易并且具有高生产量。制造发光器件的方法的特征在于：将含有发光材料的溶液在减压下喷射到阳极或阴极; 溶液中的溶剂挥发，直到溶液到达阳极或阴极; 并且剩余的发光材料沉积在阳极或阴极上以形成发光层。在施加溶液后，不需要用于降低膜厚度的燃烧步骤。因此，可以提供需要低成本且容易但具有高生产量的制造方法。

10. 发明授权

US06739854B1 Method and system for treating a power transmission belt/belt sleeve 失效
标题翻译：用于处理动力传动皮带/皮带套的方法和系统
公开(公告)号：US06739854B1
公开(公告)日：2004-05-25
申请号：US09008675
申请日：1998-01-16
申请人： Akihiro Nagata , Toshiaki Aragane , Takashi Hamada , Yoshiki Matsuura
发明人： Akihiro Nagata , Toshiaki Aragane , Takashi Hamada , Yoshiki Matsuura
IPC分类号： B29D2900
CPC分类号： B29D29/06
摘要： A method of treating a power transmission belt/belt sleeve of the type having an endless body with a length extending around an axis and a radially inwardly facing surface and a radially outwardly facing surface. The method includes the steps of wrapping at least one sheet of vapor-impervious film against and around the radially outwardly facing surface of the belt/belt sleeve body and vulcanizing the belt/belt sleeve with the at least one sheet of vapor-impervious film wrapped around the belt/belt sleeve body.
摘要翻译：一种处理这种类型的动力传动皮带/皮带套的方法，该动力传动带/皮带套具有环形体，其长度围绕轴线和径向向内表面和径向向外表面延伸。该方法包括以下步骤：将至少一层不透气的薄膜包裹在皮带/皮带套筒主体的径向向外的表面上和周围，并用带子/皮带套筒硫化所述至少一片不透气薄膜围绕皮带/皮带袖体。

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