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1. 发明专利

IN10062DEN2014A APPARATUS AND METHOD FOR IMPROVING EFFICIENCY OF THIN- FILM PHOTOVOLTAIC DEVICES 未知
公开(公告)号：IN10062DEN2014A
公开(公告)日：2015-08-14
申请号：IN10062DEN2014
申请日：2014-11-27
申请人： FIRST SOLAR INC , GUPTA AKHLESH , GLOECK LER MARKUS , POWELL RICK C , PENG XILIN , WANG JIANJUN , ZHAO ZHIBO , TRIVEDI JIGISH
发明人： GUPTA AKHLESH , GLOECKLER MARKUS , POWELL RICK C , PENG XILIN , WANG JIANJUN , ZHAO ZHIBO , TRIVEDI JIGISH
IPC分类号： H01L21/36 , H01L21/02
摘要： A method for producing apparatus for producing and photovoltaic device including semiconductor layers with halide heat treated surfaces that increase grain growth within at least of the semiconductor layers and improve the interface between the semiconductor layers. The halide heat treatment includes applying and heating multiple coatings of a halide compound on surfaces adjacent to or part of the semiconductor layers.

2. 发明申请

WO2006135505A3 CAPACITORLESS DRAM OVER LOCALIZED SOI 审中-公开
标题翻译：无源DRAM超定位SOI
公开(公告)号：WO2006135505A3
公开(公告)日：2008-01-31
申请号：PCT/US2006017493
申请日：2006-05-05
申请人： MICRON TECHNOLOGY INC , MATHEW SURAJ , TRIVEDI JIGISH D
发明人： MATHEW SURAJ , TRIVEDI JIGISH D
IPC分类号： H01L21/84 , H01L27/108 , H01L27/12 , H01L29/78
CPC分类号： G11C7/00 , H01L21/84 , H01L27/108 , H01L27/10802 , H01L27/10882 , H01L27/1203 , H01L29/7841
摘要： A method of forming capacitorless DRAM over localized silicon-on-insulator comprises the following steps: A silicon substrate (10) is provided, and an array of silicon studs (16) is defined within the silicon substrate. An insulator layer (18) is defined atop at least a portion of the silicon substrate (10), and between the silicon studs (16). A silicon-over-insulator layer (22, 24) is defined surrounding the silicon studs (16) atop the insulator layer(18), and a capacitorless DRAM (26-40) is formed within and above the silicon-over-insulator layer (22, 24).
摘要翻译：在局部绝缘体上形成无电容器DRAM的方法包括以下步骤：提供硅衬底（10），并且硅衬底阵列（16）被限定在硅衬底内。绝缘体层（18）被限定在硅衬底（10）的至少一部分之上，并且在硅柱头（16）之间。绝缘体层（22,24）被限定为围绕绝缘体层（18）顶部的硅柱（16），并且在绝缘体上硅层内部和上方形成无电容器DRAM（26-40）（22,24）。

3. 发明申请

WO2012019078A2 PHOTOVOLTAIC MODULE CLEANER 审中-公开
标题翻译：光伏组件清洗机
公开(公告)号：WO2012019078A2
公开(公告)日：2012-02-09
申请号：PCT/US2011/046706
申请日：2011-08-05
申请人： FIRST SOLAR, INC , CHENG, Long , TRIVEDI, Jigish
发明人： CHENG, Long , TRIVEDI, Jigish
IPC分类号： B08B7/04
CPC分类号： H01L31/068 , B08B1/04 , H01L31/0296 , H01L31/03925 , H01L31/048 , H01L31/0488 , H01L31/073 , H01L31/1836 , Y02E10/543 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to methods for cleaning semiconductors used photovoltaic cells and modules, and methods for manufacturing p-n junctions for photovoltaic cells and modules.
摘要翻译：本发明涉及用于清洁所使用的半导体光伏电池和模块的方法，以及用于制造光伏电池和模块的p-n结的方法。

4. 发明申请

WO2006130309A2 METHOD OF MANUFACTURING SIDEWALL SPACERS ON A MEMORY DEVICE, AND DEVICE COMPRISING SAME 审中-公开
标题翻译：在存储器件上制造隔板间隔的方法以及包含其的装置
公开(公告)号：WO2006130309A2
公开(公告)日：2006-12-07
申请号：PCT/US2006/017367
申请日：2006-05-05
申请人： MICRON TECHNOLOGY, INC. , HWANG, David, K. , PAREKH, Kunal , WILLETT, Michael , TRIVEDI, Jigish , MATHEW, Suraj , PETERSON, Greg
发明人： HWANG, David, K. , PAREKH, Kunal , WILLETT, Michael , TRIVEDI, Jigish , MATHEW, Suraj , PETERSON, Greg
IPC分类号： H01L27/105 , H01L21/8239 , H01L21/8247 , H01L21/8242 , H01L27/108
CPC分类号： H01L27/11526 , H01L27/105 , H01L27/1052 , H01L27/10894 , H01L27/10897 , H01L27/11543
摘要： The present invention is generally directed to a method of manufacturing sidewall spacers on a memory device, and a memory device comprising such sidewall spacers. In one illustrative embodiment, the method includes forming sidewall spacers on a memory device comprised of a memory array and at least one peripheral circuit by forming a first sidewall spacer adjacent a word line structure in the memory array, the first sidewall spacer having a first thickness and forming a second sidewall spacer adjacent a transistor structure in the peripheral circuit, the second sidewall spacer having a second thickness that is greater than the first thickness, wherein the first and second sidewall spacers comprise material from a single layer of spacer material. In one illustrative embodiment, the device includes a memory array comprised of a plurality of word line structures, each of the plurality of word line structures having a first sidewall spacer formed adjacent thereto, the first sidewall spacer having a first thickness, and a peripheral circuit comprised of at least one transistor having a second sidewall spacer formed adjacent thereto, the second sidewall spacer having a second thickness that is greater than the first thickness, the first and second sidewall spacers comprised of a material from a single layer of spacer material.
摘要翻译：本发明一般涉及在存储器件上制造侧壁间隔物的方法，以及包括这种侧壁间隔物的存储器件。在一个说明性实施例中，该方法包括在由存储器阵列和至少一个外围电路构成的存储器件上形成侧壁间隔物，该隔离物通过形成邻近存储器阵列中的字线结构的第一侧壁间隔物，第一侧壁间隔物具有第一厚度以及在所述外围电路中形成与所述晶体管结构相邻的第二侧壁间隔物，所述第二侧壁间隔物具有大于所述第一厚度的第二厚度，其中所述第一和第二侧壁间隔物包括来自单层间隔物材料的材料。在一个说明性实施例中，该装置包括由多个字线结构组成的存储器阵列，多个字线结构中的每一个具有与其相邻形成的第一侧壁间隔物，第一侧壁间隔物具有第一厚度，外围电路包括至少一个晶体管，其具有与其相邻形成的第二侧壁间隔物，所述第二侧壁间隔物具有大于第一厚度的第二厚度，所述第一和第二侧壁间隔物由来自单层间隔物材料的材料构成。

5. 发明申请

WO2013096264A1 PHOTOVOLTAIC DEVICE WITH AN ANTI-REFLECTIVE SURFACE AND METHODS OF MANUFACTURING THE SAME 审中-公开
标题翻译：具有防反射表面的光伏器件及其制造方法
公开(公告)号：WO2013096264A1
公开(公告)日：2013-06-27
申请号：PCT/US2012/070263
申请日：2012-12-18
申请人： FIRST SOLAR, INC. , YANG, Yu , TRIVEDI, Jigish
发明人： YANG, Yu , TRIVEDI, Jigish
IPC分类号： H01L31/0232
CPC分类号： H01L31/0522 , H01L31/02168 , H01L31/02366 , H01L31/0547 , H01L31/1884 , Y02E10/52
摘要： A photovoltaic device comprising a substrate which has a porous first surface and a transparent conductive oxide layer located on a second surface opposite the first surface. A method of manufacturing the device is also described.
摘要翻译：一种光电器件，包括具有多孔第一表面的衬底和位于与第一表面相对的第二表面上的透明导电氧化物层。还描述了制造该装置的方法。

6. 发明申请

WO2012019078A3 PHOTOVOLTAIC MODULE CLEANER 审中-公开
标题翻译：光伏模块清洁器
公开(公告)号：WO2012019078A3
公开(公告)日：2012-05-03
申请号：PCT/US2011046706
申请日：2011-08-05
申请人： FIRST SOLAR INC , CHENG LONG , TRIVEDI JIGISH
发明人： CHENG LONG , TRIVEDI JIGISH
IPC分类号： H01L21/02 , H01L21/311 , H01L27/30
CPC分类号： H01L31/068 , B08B1/04 , H01L31/0296 , H01L31/03925 , H01L31/048 , H01L31/0488 , H01L31/073 , H01L31/1836 , Y02E10/543 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to methods for cleaning semiconductors used photovoltaic cells and modules, and methods for manufacturing p-n junctions for photovoltaic cells and modules.
摘要翻译：本发明涉及用于清洁使用光伏电池和模块的半导体的方法，以及用于制造光伏电池和模块的p-n结的方法。

7. 发明申请

WO2008063469A2 RECESSED ACCESS DEVICE FOR A MEMORY 审中-公开
标题翻译：用于存储器的存取设备
公开(公告)号：WO2008063469A2
公开(公告)日：2008-05-29
申请号：PCT/US2007/023767
申请日：2007-11-13
申请人： MICRON TECHNOLOGY, INC. , BEIGEL, Kurt D. , TRIVEDI, Jigish D. , DUESMAN, Kevin
发明人： BEIGEL, Kurt D. , TRIVEDI, Jigish D. , DUESMAN, Kevin
IPC分类号： H01L21/336 , H01L21/8242 , H01L27/108
CPC分类号： H01L29/66621 , H01L27/10876
摘要： Semiconductor memory devices having recessed access devices are disclosed. In some embodiments, a method of forming the recessed access device includes forming a device recess in a substrate material that extends to a first depth in the substrate that includes a gate oxide layer in the recess. The device recess may be extended to a second depth that is greater that the first depth to form an extended portion of the device recess. A field oxide layer may be provided within an interior of the device recess that extends inwardly into the interior of the device recess and into the substrate. Active regions may be formed in the substrate that abut the field oxide layer, and a gate material may be deposited into the device recess.
摘要翻译：公开了具有凹入式存取装置的半导体存储器件。在一些实施例中，形成凹入式进入装置的方法包括在基底中形成装置凹陷，基底材料延伸至基底中的第一深度，该第一深度包括凹陷中的栅极氧化物层。装置凹部可以延伸到大于第一深度的第二深度，以形成装置凹部的延伸部分。场氧化物层可以设置在器件凹部的内部内，该内部向内延伸到器件凹部的内部并进入衬底。可以在衬底中形成与场氧化层邻接的有源区，并且可以将栅极材料沉积到器件凹陷中。

8. 发明申请

WO2006130309A3 SIDEWALL SPACERS ON A MEMORY DEVICE 审中-公开
标题翻译：内存设备上的平板电脑
公开(公告)号：WO2006130309A3
公开(公告)日：2007-02-15
申请号：PCT/US2006017367
申请日：2006-05-05
申请人： MICRON TECHNOLOGY INC , HWANG DAVID K , PAREKH KUNAL , WILLETT MICHAEL , TRIVEDI JIGISH , MATHEW SURAJ , PETERSON GREG
发明人： HWANG DAVID K , PAREKH KUNAL , WILLETT MICHAEL , TRIVEDI JIGISH , MATHEW SURAJ , PETERSON GREG
IPC分类号： H01L27/105 , H01L21/8239 , H01L21/8242 , H01L21/8247 , H01L27/108
CPC分类号： H01L27/11526 , H01L27/105 , H01L27/1052 , H01L27/10894 , H01L27/10897 , H01L27/11543
摘要： The present invention is generally directed to a method of manufacturing sidewall spacers on a memory device, and a memory device comprising such sidewall spacers. In one illustrative embodiment, the method includes forming sidewall spacers on a memory device comprised of a memory array and at least one peripheral circuit by forming a first sidewall spacer adjacent a word line structure in the memory array, the first sidewall spacer having a first thickness and forming a second sidewall spacer adjacent a transistor structure in the peripheral circuit, the second sidewall spacer having a second thickness that is greater than the first thickness, wherein the first and second sidewall spacers comprise material from a single layer of spacer material. In one illustrative embodiment, the device includes a memory array comprised of a plurality of word line structures, each of the plurality of word line structures having a first sidewall spacer formed adjacent thereto, the first sidewall spacer having a first thickness, and a peripheral circuit comprised of at least one transistor having a second sidewall spacer formed adjacent thereto, the second sidewall spacer having a second thickness that is greater than the first thickness, the first and second sidewall spacers comprised of a material from a single layer of spacer material.
摘要翻译：本发明一般涉及在存储器件上制造侧壁间隔物的方法，以及包括这种侧壁间隔物的存储器件。在一个说明性实施例中，该方法包括在由存储器阵列和至少一个外围电路构成的存储器件上形成侧壁间隔物，该隔离物通过形成邻近存储器阵列中的字线结构的第一侧壁间隔物，第一侧壁间隔物具有第一厚度以及在所述外围电路中形成与所述晶体管结构相邻的第二侧壁间隔物，所述第二侧壁间隔物具有大于所述第一厚度的第二厚度，其中所述第一和第二侧壁间隔物包括来自单层间隔物材料的材料。在一个说明性实施例中，该装置包括由多个字线结构组成的存储器阵列，多个字线结构中的每一个具有与其相邻形成的第一侧壁间隔物，第一侧壁间隔物具有第一厚度，外围电路包括至少一个晶体管，其具有与其相邻形成的第二侧壁间隔物，所述第二侧壁间隔物具有大于第一厚度的第二厚度，所述第一和第二侧壁间隔物由来自单层间隔物材料的材料构成。

9. 发明申请

WO2013177047A1 APPARATUS AND METHOD FOR IMPROVING EFFICIENCY OF THIN-FILM PHOTOVOLTAIC DEVICES 审中-公开
标题翻译：用于提高薄膜光伏器件效率的装置和方法
公开(公告)号：WO2013177047A1
公开(公告)日：2013-11-28
申请号：PCT/US2013/041836
申请日：2013-05-20
申请人： FIRST SOLAR, INC. , GUPTA, Akhlesh , GLOECKLER, Markus , POWELL, Rick, C. , PENG, Xilin , WANG, Jianjun , ZHAO, Zhibo , TRIVEDI, Jigish
发明人： GUPTA, Akhlesh , GLOECKLER, Markus , POWELL, Rick, C. , PENG, Xilin , WANG, Jianjun , ZHAO, Zhibo , TRIVEDI, Jigish
IPC分类号： H01L21/36 , H01L21/02
CPC分类号： H01L31/1864 , H01L21/02474 , H01L21/02521 , H01L21/02562 , H01L21/02672 , H01L31/02167 , H01L31/02363 , H01L31/0296 , H01L31/073
摘要： A method for producing, apparatus for producing and photovoltaic device including semiconductor layers with halide heat treated surfaces that increase grain growth within at least of the semiconductor layers and improve the interface between the semiconductor layers. The halide heat treatment includes applying and heating multiple coatings of a halide compound on surfaces adjacent to or part of the semiconductor layers.
摘要翻译：一种制造用于制造光伏器件的方法，包括具有卤化物热处理表面的半导体层，其增加至少半导体层内的晶粒生长并改善半导体层之间的界面。卤化物热处理包括在邻近或部分半导体层的表面上施加和加热卤化物的多个涂层。

10. 发明申请

WO2013112551A3 METHOD AND APPARATUS FOR PHOTOVOLTAIC DEVICE MANUFACTURE 审中-公开
标题翻译：用于光伏器件制造的方法和装置
公开(公告)号：WO2013112551A3
公开(公告)日：2013-09-19
申请号：PCT/US2013022699
申请日：2013-01-23
申请人： FIRST SOLAR INC , GLOECKLER MARKUS , KHAN IMRAN , TRIVEDI JIGISH , TRUMAN THOMAS
发明人： GLOECKLER MARKUS , KHAN IMRAN , TRIVEDI JIGISH , TRUMAN THOMAS
IPC分类号： H01L31/18 , G01R31/26
CPC分类号： H01L31/1864 , H01L31/048 , H02S50/10 , Y02E10/50 , Y02P70/521
摘要： A apparatus and method for manufacturing a photovoltaic module includes components for heating the module and applying an electrical bias to the module to improve photovoltaic module performance and manufacture multiple photovoltaic modules with similar performance.
摘要翻译：用于制造光伏模块的装置和方法包括用于加热模块并向模块施加电偏压以改善光伏模块性能并且制造具有相似性能的多个光伏模块的组件。

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