会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 8. 发明申请
    • LOW NOISE JFET
    • 低噪声JFET
    • WO2008128007A2
    • 2008-10-23
    • PCT/US2008/059973
    • 2008-04-11
    • TEXAS INSTRUMENTS INCORPORATEDHAO, PinghaiKHAN, ImranTROGOLO, Joe
    • HAO, PinghaiKHAN, ImranTROGOLO, Joe
    • H01L29/80
    • H01L29/8086H01L29/66901H01L29/808
    • A low noise (1/f) junction field effect transistor (JFET) and method are disclosed. A buried layer of first conductivity type is formed in a substrate (102). An epitaxial layer of second conductivity type is formed over the substrate (103). First well regions of first conductivity type are formed in the epitaxial layer down to the bottom gate (106); and a second well region of second conductivity type is formed between the first well regions (108). Isolation regions are formed in the surface of the epitaxial layer (110). A first Vt region of first conductivity type is formed in the second well region between first and second isolation regions (112); and a second Vt region of second conductivity type is formed in the first Vt region (114), the first Vt region being deeper than the second Vt region. A source region and a drain region of first conductivity type are formed in the first Vt region (118).
    • 公开了一种低噪声(1 / f)结场效应晶体管(JFET)和方法。 在衬底(102)中形成第一导电类型的掩埋层。 在衬底(103)上形成第二导电类型的外延层。 第一导电类型的第一阱区在外延层中形成到底栅(106)下方; 并且在第一阱区(108)之间形成第二导电类型的第二阱区。 在外延层(110)的表面形成隔离区域。 在第一和第二隔离区域(112)之间的第二阱区域中形成第一导电类型的第一Vt区域; 并且在第一Vt区域(114)中形成第二导电类型的第二Vt区域,第一Vt区域比第二Vt区域深。 在第一Vt区域(118)中形成有第一导电类型的源极区域和漏极区域。