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1. 发明授权

US5961373A Process for forming a semiconductor device 失效
标题翻译：用于形成半导体器件的工艺
公开(公告)号：US5961373A
公开(公告)日：1999-10-05
申请号：US876461
申请日：1997-06-16
申请人： Lei Ping Lai , Sung C. Kim
发明人： Lei Ping Lai , Sung C. Kim
IPC分类号： B24B53/007 , B24B53/017 , H01L21/304 , B24B53/00
CPC分类号： B24B53/017
摘要： A process for conditioning a polishing pad has been developed that incorporates in-situ conditioning where the conditioning is performed while the substrate (27, 40) is on the polishing pad (22) but terminates before the polishing of the substrate (27, 40) is completed. In one embodiment, ex-situ conditioning of the polishing pad (22) is used on the polishing pad between substrates (27, 40). The process has benefits of both in-situ and ex-situ conditioning.
摘要翻译：已经开发了一种用于调理抛光垫的方法，该方法包括在衬底（27,40）位于抛光垫（22）上而在衬底（27,40）的抛光之前终止的情况下进行调理的原位调节完成了。在一个实施例中，在基板（27,40）之间的抛光垫上使用抛光垫（22）的非原位调节。该方法具有原位和非原位调理的优点。

2. 发明授权

US5899745A Method of chemical mechanical polishing (CMP) using an underpad with different compression regions and polishing pad therefor 失效
标题翻译：使用具有不同压缩区域的底垫和使用抛光垫的化学机械抛光（CMP）的方法
公开(公告)号：US5899745A
公开(公告)日：1999-05-04
申请号：US887695
申请日：1997-07-03
申请人： Sung C. Kim , Lei Ping Lai , Rajeev Bajaj , Adam Manzonie
发明人： Sung C. Kim , Lei Ping Lai , Rajeev Bajaj , Adam Manzonie
IPC分类号： B24B37/04 , B24B37/10 , B24B37/22 , H01L21/00 , H01L21/304
CPC分类号： B24B37/042 , B24B37/105 , B24B37/22 , H01L21/31053
摘要： A chemical mechanical polishing (CMP) method utilizes a polishing pad (21) and an under pad (20). The under pad (20) has an edge portion (24) and a central portion (22). The central portion (22) has either a shore D hardness less than a shore D hardness of the portion (24), greater slurry absorption than the edge portion (24), or more compressibility than the edge portion (24). This composite material under pad (20) will improve polishing uniformity of a semiconductor wafer (39). In addition, the use of the polishing pads (20 and 21) allows for greater final wafer profile control than was previously available in the art (FIGS. 4-6).
摘要翻译：化学机械抛光（CMP）方法利用抛光垫（21）和下垫（20）。底垫（20）具有边缘部分（24）和中心部分（22）。中心部分（22）具有小于部分（24）的肖氏D硬度的肖氏D硬度，比边缘部分（24）更大的浆料吸收或比边缘部分（24）更大的压缩性。衬垫（20）下面的复合材料将改善半导体晶片（39）的抛光均匀性。此外，使用抛光垫（20和21）允许比现有技术中可获得的更大的最终晶片轮廓控制（图4-6）。

3. 发明授权

US06224472B1 Retaining ring for chemical mechanical polishing 有权
标题翻译：化学机械抛光保持环
公开(公告)号：US06224472B1
公开(公告)日：2001-05-01
申请号：US09344297
申请日：1999-06-24
申请人： Lei Ping Lai , Joshua L. Tucker , Randall J. Lujan
发明人： Lei Ping Lai , Joshua L. Tucker , Randall J. Lujan
IPC分类号： B24B500
CPC分类号： B24B37/32
摘要： Methods and apparatus for chemical mechanical polishing of substrates, such as semiconductor wafers, which employ retaining rings to hold a substrate in place during the polishing process. The retaining rings have surface characteristics that may be used to improve polishing uniformity, especially at a wafer periphery, and/or to improve removal rate of a chemical mechanical polishing (“CMP”) system. The surface characteristics may be recesses and/or protrusions on the pad-facing surface of a CMP retaining ring, which during polishing contact and act to flatten a CMP polishing pad beneath the substrate. Near the edge the surface characteristics may also condition the surface of a polishing pad during polishing and may be further configured to improve slurry transport.
摘要翻译：用于化学机械抛光的方法和装置，例如半导体晶片，其在抛光过程中采用保持环将基板保持在适当位置。保持环具有可用于改善抛光均匀性，特别是在晶片周边处的表面特性和/或改善化学机械抛光（“CMP”）系统的去除速率。表面特性可以是在CMP保持环的面向衬垫的表面上的凹陷和/或突起，其在抛光接触期间并且用于使CMP抛光垫在基底下方平坦化。在边缘附近，表面特征也可以在抛光期间调节抛光垫的表面，并且可以进一步构造成改善浆料输送。

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