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1. 发明授权

US5609778A Process for high contrast marking on surfaces using lasers 失效
标题翻译：使用激光对表面进行高对比度标记的工艺
公开(公告)号：US5609778A
公开(公告)日：1997-03-11
申请号：US460294
申请日：1995-06-02
申请人： Doris P. Pulaski , Richard T. Anderson , Christopher L. Tessler , Stephen J. Tirch, III , Dawn J. Tudryn
发明人： Doris P. Pulaski , Richard T. Anderson , Christopher L. Tessler , Stephen J. Tirch, III , Dawn J. Tudryn
IPC分类号： B23K26/06 , B23K26/38 , B41M1/26 , B41M5/24
CPC分类号： B41M5/24 , B23K26/066 , B23K26/386 , B41M1/26
摘要： A process for forming parabolic micro-reflectors on an object includes the steps of placing the object proximate to a transfer lens system, shining a laser beam through the lens system, a mask and a wobble plate and onto the object, the wobble plate wobbling the laser beam such that a parabolic shaped micro-reflector is formed on the object.
摘要翻译：用于在物体上形成抛物面微反射器的过程包括以下步骤：将物体靠近转印透镜系统，将激光束照射通过透镜系统，掩模和摆盘并移动到物体上，摆动板摆动激光束，使得在物体上形成抛物线状的微反射器。

2. 发明授权

US06340626B1 Method for making a metallic pattern by photolithography 失效
标题翻译：通过光刻制造金属图案的方法
公开(公告)号：US06340626B1
公开(公告)日：2002-01-22
申请号：US09595631
申请日：2000-06-16
申请人： Kamalesh S. Desai , Brian D. Husson , Mathias P. Jeanneret , Stephen J. Tirch, III
发明人： Kamalesh S. Desai , Brian D. Husson , Mathias P. Jeanneret , Stephen J. Tirch, III
IPC分类号： H01L21322
CPC分类号： G03F7/203 , G03F7/2024 , H01L21/0272 , H05K3/0082 , H05K3/064 , H05K2203/0505 , H05K2203/1476
摘要： A method for making a metallic pattern that includes redundant photolithography to significantly reduce the occurrence of defects in the metal layer that defines the desired metallic pattern. The presence of contaminants in the photoresist layer during exposure and developing away of portions of a photoresist layer can cause defects in the metal layer that defines the desired metallic pattern. Contaminants in the photoresist layer prevent portions of the photoresist layer from being exposed and developed away, so that portions of the photoresist layer that should be developed away remain in place, thereby causing the development of defects in the metal layer that defines the desired metallic pattern. These contaminants move to different positions during the developing away of the photoresist. By exposing those portions of the photoresist layer that are no longer shielded from exposure by the contaminants because the contaminants have moved to different positions, those portions of the photoresist layer now can be developed away, so that they are no longer present and no longer cause defects in the metal layer that defines the desired metallic pattern.
摘要翻译：一种用于制造包括冗余光刻的金属图案的方法，以显着减少限定所需金属图案的金属层中缺陷的发生。在光致抗蚀剂层的部分曝光和显影期间，光致抗蚀剂层中的污染物的存在可能导致限定所需金属图案的金属层中的缺陷。光致抗蚀剂层中的污染物防止光致抗蚀剂层的部分暴露和脱落，使得应该被开发的光致抗蚀剂层的部分保持在适当位置，从而导致金属层中限定所需金属图案的缺陷的发展。在光致抗蚀剂的显影期间，这些污染物移动到不同的位置。通过暴露光致抗蚀剂层的那些不再被污染物暴露的部分，因为污染物已经移动到不同的位置，光致抗蚀剂层的那些部分现在可以被开发出来，使得它们不再存在并且不再导致限定所需金属图案的金属层中的缺陷。

3. 发明授权

US06235544B1 Seed metal delete process for thin film repair solutions using direct UV laser 失效
标题翻译：种子金属删除工艺用于使用直接UV激光的薄膜修复解决方案
公开(公告)号：US06235544B1
公开(公告)日：2001-05-22
申请号：US09295131
申请日：1999-04-20
申请人： Peter A. Franklin , Charles J. Hendricks , Richard P. Surprenant , Stephen J. Tirch, III , Thomas A. Wassick , James P. Wood
发明人： Peter A. Franklin , Charles J. Hendricks , Richard P. Surprenant , Stephen J. Tirch, III , Thomas A. Wassick , James P. Wood
IPC分类号： G01R3126
CPC分类号： H01L21/485
摘要： A multilayer thin film structure (MLTF) is provided having no extraneous via-pad connection strap plated metallurgy for defective vias needing removal. The method for making or repairing the MLTF comprises determining interconnection defects in the MLTF at a thin film layer adjacent to the top metal layer of the structure, applying a top surface dielectric layer and forming vias in the layer, applying a metal conducting layer and removing the metal conducting layer for via-pad connection straps of defective vias and at the intersection of XY lines used in the repair, defining the top surface metallization including a series of orthogonal X conductor repair lines and Y conductor repair lines using a photoresist and lithography and then using a phototool to selectively expose the photoresist to define top surface strap connections needed to repair the interconnections and/or make EC's, and forming the top surface metallization using additive or subtractive metallization techniques.
摘要翻译：提供了一种多层薄膜结构（MLTF），其中没有外部通孔焊盘连接带电镀冶金用于需要去除的缺陷通孔。用于制造或修复MLTF的方法包括：在与该结构的顶部金属层相邻的薄膜层处确定MLTF中的互连缺陷，施加顶表面介电层并在该层中形成通孔，施加金属导电层并除去用于通孔焊盘连接带的金属导电层和用于修复的XY线的相交处，限定包括一系列正交X导体修复线的顶表面金属化和使用光致抗蚀剂和光刻的Y导体修复线，然后使用光学工具选择性地暴露光致抗蚀剂以限定修复互连和/或制造EC所需的顶表面带连接，以及使用添加或减色金属化技术形成顶表面金属化。

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