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1. 发明授权

US06340626B1 Method for making a metallic pattern by photolithography 失效
标题翻译：通过光刻制造金属图案的方法
公开(公告)号：US06340626B1
公开(公告)日：2002-01-22
申请号：US09595631
申请日：2000-06-16
申请人： Kamalesh S. Desai , Brian D. Husson , Mathias P. Jeanneret , Stephen J. Tirch, III
发明人： Kamalesh S. Desai , Brian D. Husson , Mathias P. Jeanneret , Stephen J. Tirch, III
IPC分类号： H01L21322
CPC分类号： G03F7/203 , G03F7/2024 , H01L21/0272 , H05K3/0082 , H05K3/064 , H05K2203/0505 , H05K2203/1476
摘要： A method for making a metallic pattern that includes redundant photolithography to significantly reduce the occurrence of defects in the metal layer that defines the desired metallic pattern. The presence of contaminants in the photoresist layer during exposure and developing away of portions of a photoresist layer can cause defects in the metal layer that defines the desired metallic pattern. Contaminants in the photoresist layer prevent portions of the photoresist layer from being exposed and developed away, so that portions of the photoresist layer that should be developed away remain in place, thereby causing the development of defects in the metal layer that defines the desired metallic pattern. These contaminants move to different positions during the developing away of the photoresist. By exposing those portions of the photoresist layer that are no longer shielded from exposure by the contaminants because the contaminants have moved to different positions, those portions of the photoresist layer now can be developed away, so that they are no longer present and no longer cause defects in the metal layer that defines the desired metallic pattern.
摘要翻译：一种用于制造包括冗余光刻的金属图案的方法，以显着减少限定所需金属图案的金属层中缺陷的发生。在光致抗蚀剂层的部分曝光和显影期间，光致抗蚀剂层中的污染物的存在可能导致限定所需金属图案的金属层中的缺陷。光致抗蚀剂层中的污染物防止光致抗蚀剂层的部分暴露和脱落，使得应该被开发的光致抗蚀剂层的部分保持在适当位置，从而导致金属层中限定所需金属图案的缺陷的发展。在光致抗蚀剂的显影期间，这些污染物移动到不同的位置。通过暴露光致抗蚀剂层的那些不再被污染物暴露的部分，因为污染物已经移动到不同的位置，光致抗蚀剂层的那些部分现在可以被开发出来，使得它们不再存在并且不再导致限定所需金属图案的金属层中的缺陷。

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