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1. 发明授权

US06964877B2 LED power package 有权
标题翻译： LED电源包装
公开(公告)号：US06964877B2
公开(公告)日：2005-11-15
申请号：US10832969
申请日：2004-04-27
申请人： Chen-Lun Hsing Chen , Stanton Weaver, Jr. , Ivan Eliashevich , Sebastien Libon , Mehmet Arik , David Shaddock
发明人： Chen-Lun Hsing Chen , Stanton Weaver, Jr. , Ivan Eliashevich , Sebastien Libon , Mehmet Arik , David Shaddock
IPC分类号： H01L21/00 , H01L31/02 , H01L33/48 , H01L33/62
CPC分类号： H01L33/486 , H01L24/97 , H01L33/62 , H01L33/647 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/12041 , H01L2924/12042 , H01L2924/3011 , H01L2224/81 , H01L2924/00 , H01L2224/05599 , H01L2224/05644 , H01L2224/05155 , H01L2224/05166
摘要： Surface mount light emitting diode (LED) packages each contain a light emitting diode (LED) die (24). A plurality of arrays of openings are drilled into an electrically insulating sub-mount wafer (10). A metal is applied to the drilled openings to produce a plurality of via arrays (12). The LED dice (24) are flip-chip bonded onto a frontside (16) of the sub-mount wafer (10). The p-type and n-type contacts of each flip-chip bonded LED (24) electrically communicate with a solderable backside (18) of the sub-mount wafer (10) through a via array (12). A thermal conduction path (10, 12) is provided for thermally conducting heat from the flip-chip bonded LED dice (24) to the solderable backside (18) of the sub-mount wafer (10). Subsequent to the flip-chip bonding, the sub-mount wafer (10) is separated to produce the surface mount LED packages.
摘要翻译：表面贴装发光二极管（LED）封装各自包含发光二极管（LED）裸片（24）。将多个开口阵列钻入电绝缘子安装晶片（10）中。金属被施加到钻孔以产生多个通孔阵列（12）。 LED芯片（24）被倒装芯片接合到子安装晶片（10）的前侧（16）上。每个倒装芯片接合的LED（24）的p型和n型触点通过通孔阵列（12）与辅助安装晶片（10）的可焊接背面（18）电连通。提供了一种导热路径（10,12），用于将来自倒装芯片接合的LED骰子（24）的热量传导到子安装晶片（10）的可焊接背面（18）。在倒装芯片接合之后，子安装晶片（10）被分离以产生表面贴装LED封装。

2. 发明申请

US20070005294A1 Clearance measurement system and method of operation 有权
标题翻译：间隙测量系统和操作方法
公开(公告)号：US20070005294A1
公开(公告)日：2007-01-04
申请号：US11167434
申请日：2005-06-27
申请人： Emad Andarawis , Mahadevan Balasubramaniam , Todd Anderson , Samhita Dasgupta , David Shaddock , Shobhana Mani , Jie Jiang
发明人： Emad Andarawis , Mahadevan Balasubramaniam , Todd Anderson , Samhita Dasgupta , David Shaddock , Shobhana Mani , Jie Jiang
IPC分类号： G01B15/00
CPC分类号： G01B7/144
摘要： A clearance measurement system is provided. The clearance measurement system includes a reference geometry disposed on a first object having an otherwise continuous surface geometry and a sensor disposed on a second object, wherein the sensor is configured to generate a first signal representative of a first sensed parameter from the first object and a second signal representative of a second sensed parameter from the reference geometry. The clearance measurement system also includes a processing unit configured to process the first and second signals to estimate a clearance between the first and second objects based upon a measurement difference between the first and second sensed parameters.
摘要翻译：提供了间隙测量系统。间隙测量系统包括设置在具有另外连续的表面几何形状的第一物体上的参考几何形状和设置在第二物体上的传感器，其中传感器被配置为产生表示来自第一物体的第一感测参数的第一信号，以及第二信号表示来自参考几何的第二感测参数。间隙测量系统还包括处理单元，其被配置为基于第一和第二感测参数之间的测量差异来处理第一和第二信号以估计第一和第二对象之间的间隙。

3. 发明申请

US20050097941A1 Gas sensor device 有权
标题翻译：气体传感器装置
公开(公告)号：US20050097941A1
公开(公告)日：2005-05-12
申请号：US10706767
申请日：2003-11-12
申请人： Peter Sandvik , Vinayak Tilak , Jesse Tucker , Stanton Weaver , David Shaddock , Jonathan Male , John Lemmon , Mark Woodmansee , Venkatesan Manivannan , Deborah Haitko
发明人： Peter Sandvik , Vinayak Tilak , Jesse Tucker , Stanton Weaver , David Shaddock , Jonathan Male , John Lemmon , Mark Woodmansee , Venkatesan Manivannan , Deborah Haitko
IPC分类号： G01N27/414 , G01N33/00 , G01N7/00
CPC分类号： G01N27/4141 , G01N33/0037 , Y02A50/245
摘要： A gas sensor device including a semiconductor substrate; one or more catalytic gate-electrodes deposited on a surface of the semiconductor substrate; one or more ohmic contacts deposited on the surface of the semiconductor substrate and a passivation layer deposited on at least a portion of the surface; wherein the semiconductor substrate includes a material selected from the group consisting of silicon carbide, diamond, Group III nitrides, alloys of Group III nitrides, zinc oxide, and any combinations thereof.
摘要翻译：一种气体传感器装置，包括半导体衬底; 沉积在半导体衬底的表面上的一个或多个催化栅电极; 沉积在半导体衬底的表面上的一个或多个欧姆接触层和沉积在该表面的至少一部分上的钝化层; 其中所述半导体衬底包括选自碳化硅，金刚石，III族氮化物，III族氮化物的合金，氧化锌及其任何组合的材料。

4. 发明申请

US20060289308A1 System and method for operating an exhaust gas sensor system 失效
标题翻译：用于操作废气传感器系统的系统和方法
公开(公告)号：US20060289308A1
公开(公告)日：2006-12-28
申请号：US11166422
申请日：2005-06-24
申请人： David Shaddock , Ganapathisubbu Sethuvenkatraman , Kunal Goray
发明人： David Shaddock , Ganapathisubbu Sethuvenkatraman , Kunal Goray
IPC分类号： G01N27/26
CPC分类号： G01N27/4077 , F01N13/08 , F01N2560/02
摘要： An exhaust gas sensor system includes an inner chamber disposed around a sensor element. The inner chamber has either a cylindrical shape or a frusto-conical shape. The system further includes an outer chamber disposed substantially around the inner chamber to redirect a flow of an exhaust gas stream having an original direction by allowing the exhaust gas stream to strike a surface of the inner chamber to change the original direction of the flow to a substantially perpendicular direction relative to the original direction, then to substantially reverse the substantially perpendicular direction of the flow to create a substantially reversed flow within the inner chamber. Alternately the exhaust sensor system includes a sintered metal filter that prevents exhaust gas particles from fouling a sensor element. The system further includes an electric source coupled to the sintered metal filter to heat the sintered metal filter to a temperature sufficient to remove the exhaust gas particles from the sintered metal filter.
摘要翻译：排气传感器系统包括设置在传感器元件周围的内室。内腔具有圆柱形或截头圆锥形。该系统还包括一个外室，其基本上设置在内腔周围，以通过允许废气流冲击内腔的表面来改变原来的流动方向，从而改变具有原始方向的废气流的流动基本上相对于原始方向的垂直方向，然后基本上反向流动的基本上垂直的方向，以在内腔内产生基本上相反的流动。或者，排气传感器系统包括防止废气颗粒污染传感器元件的烧结金属过滤器。该系统还包括耦合到烧结金属过滤器的电源，以将烧结金属过滤器加热到足以从烧结金属过滤器去除废气颗粒的温度。

5. 发明申请

US20130105993A1 SEMICONDUCTOR DEVICE INTERCONNECT 审中-公开
标题翻译：半导体器件互连
公开(公告)号：US20130105993A1
公开(公告)日：2013-05-02
申请号：US13284314
申请日：2011-10-28
申请人： Raj BAHADUR , David SHADDOCK , Binoy SHAH
发明人： Raj BAHADUR , David SHADDOCK , Binoy SHAH
IPC分类号： H01L23/48 , H01L21/28
CPC分类号： H01L23/49811 , H01L21/563 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/81 , H01L25/0657 , H01L2224/03829 , H01L2224/0401 , H01L2224/11003 , H01L2224/111 , H01L2224/11334 , H01L2224/1134 , H01L2224/1145 , H01L2224/115 , H01L2224/11901 , H01L2224/13017 , H01L2224/13018 , H01L2224/131 , H01L2224/13147 , H01L2224/14051 , H01L2224/14135 , H01L2224/14163 , H01L2224/14166 , H01L2224/14179 , H01L2224/14505 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/81191 , H01L2224/81193 , H01L2224/81801 , H01L2224/819 , H01L2224/81902 , H01L2225/06506 , H01L2924/10253 , H01L2924/15747 , H01L2924/351 , H01L2924/00012 , H01L2224/114 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要： There is set forth herein a semiconductor assembly including an integrated circuit and a set of springs extending from the integrated circuit that can be adapted for connection to an external article. The external article can be e.g. an integrated circuit or a printed circuit board. On connection of the semiconductor assembly to an external article there can be defined a semiconductor assembly comprising the integrated circuit the set of springs and the external article. The set of springs can be metal nanospring array can formed by GLAD (Glancing angle deposition) process. In one embodiment, the nanospring array can be GLAD formed on a substrate and then applied to the integrated circuit. In one embodiment, the nanospring array can be GLAD formed on the integrated circuit.
摘要翻译：这里提出了包括集成电路和从集成电路延伸的一组弹簧的半导体组件，其可以适于连接到外部制品。外部物品可以是例如。集成电路或印刷电路板。在将半导体组件连接到外部制品上时，可以限定一个半导体组件，该半导体组件包括该组弹簧和外部制品的集成电路。该组弹簧可以是通过GLAD（Glancing Angle Deposition）工艺形成的金属纳米螺旋阵列。在一个实施例中，纳米螺旋阵列可以是形成在衬底上的GLAD，然后施加到集成电路。在一个实施例中，纳米螺旋阵列可以是形成在集成电路上的GLAD。

6. 发明申请

US20060239813A1 Displacement sensor system and method of operation 有权
公开(公告)号：US20060239813A1
公开(公告)日：2006-10-26
申请号：US11115736
申请日：2005-04-26
申请人： Minesh Shah , Mahadevan Balasubramaniam , Philip Beauchamp , Todd Anderson , Samhita Dasgupta , David Shaddock , Emad Andarawis
发明人： Minesh Shah , Mahadevan Balasubramaniam , Philip Beauchamp , Todd Anderson , Samhita Dasgupta , David Shaddock , Emad Andarawis
IPC分类号： F04D29/66
CPC分类号： F01D21/003 , F01D11/08 , F01D21/04 , F04D27/001 , F05D2260/85 , G01B7/144
摘要： A clearance sensing system for a rotating machine includes a plurality of sensor probes disposed within a stationary shroud of the rotating machine. Each of the plurality of sensor probes is adapted to measure a parameter indicative of an axial and a radial displacement of a rotating component within the shroud and to produce a signal that corresponds to the parameter. In certain embodiments, this parameter may include a capacitance between the rotating component and the sensor probe. The clearance sensing system further includes a circuit that receives the signal from each of the plurality of sensor probes and determines (a) the axial displacement of the rotating component within the shroud and (b) a radial displacement of the rotating component relative to the shroud.

7. 发明申请

US20060283255A1 High-temperature pressure sensor 有权
标题翻译：高温压力传感器
公开(公告)号：US20060283255A1
公开(公告)日：2006-12-21
申请号：US11509397
申请日：2006-08-25
申请人： Vinayak Tilak , Jie Jiang , David Shaddock , Stacey Kennerly , David Esler , Aaron Knobloch
发明人： Vinayak Tilak , Jie Jiang , David Shaddock , Stacey Kennerly , David Esler , Aaron Knobloch
IPC分类号： G01L9/00
CPC分类号： G01H9/00 , G01L1/044 , G01L1/148 , G01L1/16 , G01L9/0052 , G01L9/0073 , G01L9/0075 , G01L9/008 , G01L9/085 , G01L19/0681
摘要： A high-temperature pressure sensor that includes a dielectric layer. The pressure sensor also includes a substrate capable of withstanding temperatures greater than 450° C. without entering a phase change, at least one semiconducting material deposited on the sapphire substrate, and a silicon dioxide layer deposited over the semiconducting material. One aspect of the pressure sensor includes a second semiconducting material.
摘要翻译：一种包括电介质层的高温压力传感器。压力传感器还包括能够耐受大于450℃的温度而不进入相变的衬底，沉积在蓝宝石衬底上的至少一种半导体材料和沉积在半导体材料上的二氧化硅层。压力传感器的一个方面包括第二半导体材料。

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