会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Exposure method
    • 曝光方法
    • US5443932A
    • 1995-08-22
    • US161099
    • 1993-12-03
    • Hirohisa OhtaKunitaka OzawaEigo KawakamiShunichi Uzawa
    • Hirohisa OhtaKunitaka OzawaEigo KawakamiShunichi Uzawa
    • G03F7/20G03F9/00H01L21/027H01L21/30
    • G03F9/7023G03F7/201
    • An exposure method includes disposing a mask and a semiconductor wafer opposed to each other in a close proximity relation with respect to a Z-axis direction and printing a pattern of the mask on each of different shot areas of the semiconductor wafer in a step-and-repeat manner, with a predetermined exposure energy. In this method, the spacing between the mask and the wafer for the paralleling of them is made larger than the spacing therebetween as assumed at the time of mask-to-wafer alignment with respect to X-Y plane or the spacing between the mask and the wafer as assumed at the time of exposure of the wafer to the mask. After the paralleling of the mask and the wafer, the mask and the wafer are moved closer to each other in the Z-axis direction and alignment and exposure is performed. This ensures that the alignment and exposure are effected at an optimum spacing while, on the other hand, contact of the mask and the wafer at the time of paralleling is precluded.
    • 曝光方法包括以相对于Z轴方向彼此紧密相对的方式设置掩模和半导体晶片,并且在半导体晶片的不同照射区域的每一个上以均匀的方式印刷掩模的图案,并且 以预定的曝光能量。 在这种方法中,掩模和与它们并联的晶片之间的间隔被制成大于它们之间的间隔,如假设在相对于XY平面的掩模到晶片对准时或掩模和晶片之间的间隔 如在晶片暴露于掩模时所假设的那样。 在掩模和晶片平行之后,掩模和晶片在Z轴方向上彼此靠近移动,并进行对准和曝光。 这确保了对准和曝光以最佳间隔进行,另一方面,阻止了并联时的掩模与晶片的接触。
    • 10. 发明授权
    • Exposure method
    • 曝光方法
    • US5498501A
    • 1996-03-12
    • US416503
    • 1995-04-04
    • Isamu ShimodaTakao KariyaNobutoshi MizusawaKunitaka OzawaShunichi Uzawa
    • Isamu ShimodaTakao KariyaNobutoshi MizusawaKunitaka OzawaShunichi Uzawa
    • G03F7/20G03F9/00
    • G03F7/70066G03F7/2022G03F7/7045Y10S438/949
    • A method of manufacturing of semiconductor devices, includes exposing different portions of a semiconductor substrate with a first exposure apparatus having a first exposure range; placing and aligning the semiconductor substrate with respect to a second exposure range of a second exposure apparatus, which range is larger than the first exposure range of the first exposure apparatus; detecting an alignment error of each of the portions of the semiconductor substrate as covered by the second exposure range of the second exposure apparatus; calculating an overall alignment error of those portions of the semiconductor substrate with respect to the entire second exposure range of the second exposure apparatus, on the basis of the detected alignment errors; and controlling the exposure operation of the second exposure apparatus on the basis of the calculated overall alignment error.
    • 一种半导体器件的制造方法,包括用具有第一曝光范围的第一曝光装置曝光半导体衬底的不同部分; 将半导体衬底相对于第二曝光装置的第二曝光范围放置和对准,该范围大于第一曝光装置的第一曝光范围; 检测由第二曝光装置的第二曝光范围所覆盖的半导体衬底的每个部分的对准误差; 基于检测到的对准误差,计算半导体衬底的这些部分相对于第二曝光装置的整个第二曝光范围的总体对准误差; 并根据计算的整体对准误差来控制第二曝光装置的曝光操作。