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1. 发明申请

US20130168232A1 COILS FOR GENERATING A PLASMA AND FOR SPUTTERING 审中-公开
标题翻译：用于产生等离子体和溅射的线圈
公开(公告)号：US20130168232A1
公开(公告)日：2013-07-04
申请号：US13776492
申请日：2013-02-25
申请人： Jaim NULMAN , Sergio EDELSTEIN , Mani SUBRAMANI , Zheng XU , Howard E. GRUNES , Avi TEPMAN , John C. FORSTER , Praburam GOPALRAJA
发明人： Jaim NULMAN , Sergio EDELSTEIN , Mani SUBRAMANI , Zheng XU , Howard E. GRUNES , Avi TEPMAN , John C. FORSTER , Praburam GOPALRAJA
IPC分类号： C23C14/34
CPC分类号： C23C14/34 , H01J37/321 , H01J37/34
摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.
摘要翻译：提供了一种用于半导体制造系统中的等离子体室的溅射线圈。溅射线圈将能量耦合到等离子体中，并且还提供溅射材料源，以从线圈溅射到工件上以补充从目标溅射到工件上的材料。或者，可以提供多个线圈，一个主要用于将能量耦合到等离子体中，另一个主要用于提供要溅射在工件上的溅射材料的补充源。

2. 发明授权

US08398832B2 Coils for generating a plasma and for sputtering 有权
公开(公告)号：US08398832B2
公开(公告)日：2013-03-19
申请号：US11229139
申请日：2005-09-15
申请人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard E. Grunes , Avi Tepman , John C. Forster , Praburam Gopalraja
发明人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard E. Grunes , Avi Tepman , John C. Forster , Praburam Gopalraja
IPC分类号： C23C14/34
CPC分类号： C23C14/34 , H01J37/321 , H01J37/34
摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

3. 发明授权

US06350353B2 Alternate steps of IMP and sputtering process to improve sidewall coverage 失效
公开(公告)号：US06350353B2
公开(公告)日：2002-02-26
申请号：US09449202
申请日：1999-11-24
申请人： Praburam Gopalraja , Sergio Edelstein , Avi Tepman , Peijun Ding , Debabrata Ghosh , Nirmalya Maity
发明人： Praburam Gopalraja , Sergio Edelstein , Avi Tepman , Peijun Ding , Debabrata Ghosh , Nirmalya Maity
IPC分类号： C23C1434
CPC分类号： C23C14/345 , C23C14/046 , C23C14/358 , H01J37/321 , H01J37/3408
摘要： The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductive coil. The ionized material is then deposited on the substrate which is biased to a negative voltage. A signal provided to the target during processing includes a negative voltage portion and a zero-voltage portion. During the negative voltage portion, ions are attracted to the target to cause sputtering. During the zero-voltage portion, sputtering from the target is terminated while the bias on the substrate cause reverse sputtering therefrom. Accordingly, the negative voltage portion and the zero-voltage portion are alternated to cycle between a sputter step and a reverse sputter step. The film quality and uniformity can be controlled by adjusting the frequency of the signal, the chamber pressure, the power supplied to each of the support member and other process parameters.

4. 发明授权

US06254746B1 Recessed coil for generating a plasma 失效
标题翻译：用于产生等离子体的嵌入式线圈
公开(公告)号：US06254746B1
公开(公告)日：2001-07-03
申请号：US08853024
申请日：1997-05-08
申请人： Anantha Subramani , John C. Forster , Bradley O. Stimson , Sergio Edelstein , Howard Grunes , Avi Tepman , Zheng Xu
发明人： Anantha Subramani , John C. Forster , Bradley O. Stimson , Sergio Edelstein , Howard Grunes , Avi Tepman , Zheng Xu
IPC分类号： C23C1434
CPC分类号： H01J37/32504 , H01J37/321 , H01J37/32623 , H01J37/32651 , H01J37/34
摘要： A recessed coil for a plasma chamber in a semiconductor fabrication system is provided. Recessing the coil reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece.
摘要翻译：提供了一种用于半导体制造系统中的等离子体室的凹陷线圈。嵌入线圈减少材料在线圈上的沉积，这又导致线圈在工件上脱落的颗粒物质的减少。

5. 发明授权

US06254737B1 Active shield for generating a plasma for sputtering 失效
标题翻译：用于产生溅射等离子体的主动屏蔽
公开(公告)号：US06254737B1
公开(公告)日：2001-07-03
申请号：US08730722
申请日：1996-10-08
申请人： Sergio Edelstein , Mani Subramani
发明人： Sergio Edelstein , Mani Subramani
IPC分类号： C23C1434
CPC分类号： H01J37/321 , H01J37/3408 , H01J37/3411 , H01J37/3441 , H01J2237/3327
摘要： A combination coil and shield for a plasma chamber in a semiconductor fabrication system is provided. The coil-shield has a plurality of turns to couple energy efficiently into a plasma and also substantially blocks deposition material from reaching a second shield positioned behind the first shield.
摘要翻译：提供了半导体制造系统中用于等离子体室的组合线圈和屏蔽。线圈屏蔽件具有多个匝以将能量有效地耦合到等离子体中，并且还基本上阻止沉积材料到达定位在第一屏蔽件后面的第二屏蔽。

6. 发明授权

US5691876A High temperature polyimide electrostatic chuck 失效
标题翻译：高温聚酰亚胺静电吸盘
公开(公告)号：US5691876A
公开(公告)日：1997-11-25
申请号：US381258
申请日：1995-01-31
申请人： Aihua Chen , Vijay Parkhe , Sergio Edelstein
发明人： Aihua Chen , Vijay Parkhe , Sergio Edelstein
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6831 , H01L21/6833
摘要： In accordance with the present invention, two types of polymeric dielectric systems useful in construction of a high-temperature electrostatic chuck are disclosed. Further, a high temperature power connection for transmitting power from a supply source to a conductive extension from the electrostatic chuck conductive layer is described. The first polymeric dielectric system provides for the use of polyimide films which do not require an adhesive to adhere to an underlying substrate support platen. The self-adhering polyimide film comprises from one to three layers of polyimide material, wherein at least one outer layer of polyimide material is thermoplastic in nature, for the purpose of adhesion and/or encapsulation. When the film comprises two layers, one of the layers is a non-thermoplastic polyimide having an increased glass transition temperature of about 350.degree. C. or greater. When the film comprises three layers, typically the center layer is the non-thermoplastic polyimide, with the upper and lower layers being a thermoplastic polyimide. The thermoplastic polyimide is placed in contact with a substrate to which it is to bond (such as the surface of a conductive platen used to support a semiconductor workpiece) and heat and pressure are applied to cause the thermoplastic polyimide to flow and bond to the substrate. The second polymeric dielectric system provides for the use of a liquid polyamic acid or modified polyimide precursor which is cured in place against a substrate to provide a polyimide-comprising film adhered to the substrate. Depending on the composition of the polyamic acid or modified polyimide precursor, various degrees of crystallinity can be achieved in the cured, solid polyimide.
摘要翻译：根据本发明，公开了可用于构建高温静电卡盘的两种类型的聚合介电系统。此外，描述了用于从静电卡盘导电层将电源从电源传输到导电延伸部分的高温电源连接。第一聚合物介电系统提供使用不需要粘合剂的聚酰亚胺膜粘附到下面的基底支撑台板上。自粘聚酰亚胺膜包含一层至三层聚酰亚胺材料，其中至少一层聚酰亚胺材料本质上是热塑性的，用于粘合和/或封装。当膜包含两层时，其中一层是玻璃化转变温度升高约350℃或更高的非热塑性聚酰亚胺。当膜包括三层时，通常中心层是非热塑性聚酰亚胺，上层和下层是热塑性聚酰亚胺。将热塑性聚酰亚胺与要与其键合的基底（例如用于支撑半导体工件的导电平台的表面）接触，并施加热和压力以使热塑性聚酰亚胺流动并结合到基底。第二聚合物介电系统提供使用液体聚酰胺酸或改性的聚酰亚胺前体，其被固化在基底上以提供粘附到基底上的含聚酰亚胺的膜。根据聚酰胺酸或改性聚酰亚胺前体的组成，可以在固化的固体聚酰亚胺中获得不同程度的结晶度。

7. 发明授权

US07893703B2 Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer 有权
标题翻译：用于控制在晶片上沉积电荷以测量晶片的一个或多个电性能的系统和方法
公开(公告)号：US07893703B2
公开(公告)日：2011-02-22
申请号：US11465893
申请日：2006-08-21
申请人： Jeffrey A. Rzepiela , Yiping Feng , Shiyou Pei , Alexander Kagan , Jianou Shi , Sergio Edelstein
发明人： Jeffrey A. Rzepiela , Yiping Feng , Shiyou Pei , Alexander Kagan , Jianou Shi , Sergio Edelstein
IPC分类号： G01R31/308
CPC分类号： G01R31/2831 , G01R31/2856 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.
摘要翻译：提供了用于控制晶片上的电荷沉积以测量晶片的一个或多个电性能的系统和方法。一个系统包括配置成将电荷沉积在晶片上的电晕源和配置成测量电晕源内的一个或多个条件的传感器。该系统还包括配置为基于一个或多个条件来改变电晕源的一个或多个参数的控制子系统。另一种系统包括电晕源，其被配置为在电荷沉积期间将电荷沉积在晶片上以及布置在电晕源的放电室内的气体混合物。气体混合物改变沉积在晶片上的电荷的一个或多个参数。

8. 发明授权

US07538333B1 Contactless charge measurement of product wafers and control of corona generation and deposition 失效
标题翻译：产品晶圆的非接触式电荷测量和电晕发生和沉积的控制
公开(公告)号：US07538333B1
公开(公告)日：2009-05-26
申请号：US11460517
申请日：2006-07-27
申请人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
发明人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
IPC分类号： H01J37/30 , H01J37/317 , G01R31/26
CPC分类号： G01R31/303 , G01R31/2831 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.
摘要翻译：提供了用于确定样品性质的系统和方法。样品可以是产品晶片。该方法可以包括将聚焦斑点偏置在样本上。该方法还可以包括测量样品上的测量点的参数。测量点可能与聚焦点重叠。此外，该方法可以包括根据测量的参数确定样品的性质。还提供了用于改变电晕源的性能的系统和方法。该方法可以包括改变电晕源内的环境的属性。该性质可以包括但不限于电晕源内的气体的温度，压力，湿度和/或分压。

9. 发明授权

US06783639B2 Coils for generating a plasma and for sputtering 有权
公开(公告)号：US06783639B2
公开(公告)日：2004-08-31
申请号：US10052951
申请日：2002-01-17
申请人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
发明人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
IPC分类号： C23C1434
CPC分类号： H01J37/3438 , H01J37/3402
摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

10. 发明授权

US06368469B1 Coils for generating a plasma and for sputtering 失效
公开(公告)号：US06368469B1
公开(公告)日：2002-04-09
申请号：US08851946
申请日：1997-05-06
申请人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
发明人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
IPC分类号： C23C1434
CPC分类号： H01J37/3438 , H01J37/3402
摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

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