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1. 发明授权

US08264579B2 Shared-pixel-type image sensors for controlling capacitance of floating diffusion region 失效
标题翻译：用于控制浮动扩散区电容的共享像素型图像传感器
公开(公告)号：US08264579B2
公开(公告)日：2012-09-11
申请号：US11652602
申请日：2007-01-12
申请人： Kee-Hyun Paik , Seok-ha Lee , Kang-bok Lee
发明人： Kee-Hyun Paik , Seok-ha Lee , Kang-bok Lee
IPC分类号： H04N3/14 , H01L27/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14641 , H04N5/335
摘要： A shared-pixel-type image sensor includes a semiconductor substrate, four photoelectric conversion elements disposed adjacent to one another in one direction on the semiconductor substrate, two first transmission elements transmitting charges accumulated in two adjacent ones of the photoelectric conversion elements to a first floating diffusion region, respectively, two second transmission elements transmitting charges accumulated in the other two adjacent photoelectric conversion elements to a second floating diffusion region electrically coupled with the first floating diffusion region, respectively, MOS capacitors that are electrically coupled with the first or second floating diffusion region, a reset element resetting the charges of the first and second floating diffusion regions to a reference value, and a drive element and an select element outputting the charges of the first or second floating diffusion region.
摘要翻译：共享像素型图像传感器包括半导体基板，在半导体基板上沿一个方向彼此相邻布置的四个光电转换元件，两个第一传输元件，其将在两个相邻的光电转换元件中累积的电荷传输到第一浮置扩散区域分别将在另外两个相邻的光电转换元件中累积的电荷的两个第二传输元件分别连接到与第一浮动扩散区电耦合的第二浮动扩散区域，与第一或第二浮动扩散电耦合的MOS电容器区域，将第一和第二浮动扩散区域的电荷重置为基准值的复位元件，以及输出第一或第二浮动扩散区域的电荷的驱动元件和选择元件。

2. 发明授权

US07989750B2 Image sensors with enhanced charge transmission characteristics 失效
标题翻译：具有增强的电荷传输特性的图像传感器
公开(公告)号：US07989750B2
公开(公告)日：2011-08-02
申请号：US12457536
申请日：2009-06-15
申请人： Kang-bok Lee , Seok-ha Lee
发明人： Kang-bok Lee , Seok-ha Lee
IPC分类号： H01L27/00
CPC分类号： H01L27/14603 , H01L27/14643
摘要： An image sensor includes photoelectric conversion elements formed adjacent to each other on a substrate. Two transmission elements transmit charge accumulated in two adjacent photoelectric conversion elements to a first floating diffusion region, and another two transmission elements transmit charge accumulated in the other two photoelectric conversion elements to a second floating diffusion region. The first floating diffusion region is electrically connected to the second floating diffusion region. A plurality of readout elements read out the charge transmitted to the first and the second floating diffusion regions. The image sensor also includes a dummy gate group including at least one dummy gate arrayed substantially parallel to a readout gate of the plurality of readout elements.
摘要翻译：图像传感器包括在基板上彼此相邻形成的光电转换元件。两个传输元件将在两个相邻的光电转换元件中累积的电荷传输到第一浮动扩散区域，另外两个传输元件将在另外两个光电转换元件中累积的电荷传输到第二浮动扩散区域。第一浮动扩散区域电连接到第二浮动扩散区域。多个读出元件读出传输到第一和第二浮动扩散区域的电荷。图像传感器还包括虚拟栅极组，其包括基本上平行于多个读出元件的读出栅极排列的至少一个虚拟栅极。

3. 发明授权

US07910965B2 Image sensor circuits including shared floating diffusion regions 有权
标题翻译：图像传感器电路包括共享浮动扩散区域
公开(公告)号：US07910965B2
公开(公告)日：2011-03-22
申请号：US12139022
申请日：2008-06-13
申请人： Seok-Ha Lee , Chang-Rok Moon , Kang-Bok Lee
发明人： Seok-Ha Lee , Chang-Rok Moon , Kang-Bok Lee
IPC分类号： H01L31/113
CPC分类号： H01L27/14643 , H01L27/14641 , H04N5/3575 , H04N5/3741 , H04N5/37457 , H04N5/378
摘要： An image sensor can include a plurality of photoelectric conversion elements arranged in a matrix. A plurality of floating diffusion regions can be shared by respective corresponding pairs of adjacent photoelectric conversion elements. A plurality of charge-transmission transistors can respectively correspond to the photoelectric conversion elements, where each of the charge-transmission transistors are connected between a corresponding one of the plurality of photoelectric conversion elements and a corresponding one of the plurality of floating diffusion regions. A plurality of charge-transmission lines can be commonly connected to gates of respective corresponding pairs of adjacent rows of charge-transmission transistors, where each of the respective corresponding pairs of adjacent rows of charge-transmission transistors can be connected to respective ones of the plurality of photoelectric conversion elements in different adjacent rows of floating diffusion regions.
摘要翻译：图像传感器可以包括以矩阵形式布置的多个光电转换元件。多个浮动扩散区域可由相应的相应光电转换元件对共享。多个电荷传输晶体管可以分别对应于光电转换元件，其中每个电荷传输晶体管连接在多个光电转换元件中的相应一个光电转换元件和多个浮动扩散区域中相应的一个之间。多个电荷传输线可以共同地连接到相应的相应的一对电荷传输晶体管的栅极，其中各个相应的电荷传输晶体管对中的每一对可以连接到多个电荷传输晶体管中的相应行的不同相邻行的浮动扩散区域中的光电转换元件。

4. 发明申请

US20090166696A1 CMOS Image Device with Local Impurity Region 有权
标题翻译：具有本地杂质区域的CMOS图像设备
公开(公告)号：US20090166696A1
公开(公告)日：2009-07-02
申请号：US12395757
申请日：2009-03-02
申请人： Seok-ha Lee , Jae-seob Roh , Jong-Wan Jung
发明人： Seok-ha Lee , Jae-seob Roh , Jong-Wan Jung
IPC分类号： H01L31/112
CPC分类号： H01L27/14603 , H01L27/14689
摘要： According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode is formed in the semiconductor substrate on one side of the transfer gate, and a floating diffusion region is formed on the semiconductor substrate in the other side of the transfer gate. A local impurity region of a first conductivity type is formed to be partially overlapped the transfer gate between the photodiode and the floating diffusion region.
摘要翻译：根据CMOS图像器件及其制造方法，暗电流由局部杂质区域减小。图像装置包括半导体衬底和形成在半导体衬底的预定部分上并与半导体衬底电绝缘的传输栅极。在传输栅极的一侧上的半导体衬底中形成光电二极管，并且在传输门的另一侧的半导体衬底上形成浮动扩散区。第一导电类型的局部杂质区域形成为与光电二极管和浮动扩散区域之间的传输栅极部分重叠。

5. 发明授权

US07514733B2 CMOS image device and local impurity region and method of manufacturing the same 有权
标题翻译：具有局部杂质区的CMOS图像器件及其制造方法
公开(公告)号：US07514733B2
公开(公告)日：2009-04-07
申请号：US11373935
申请日：2006-03-13
申请人： Seok-ha Lee , Jae-seob Roh , Jong-Wan Jung
发明人： Seok-ha Lee , Jae-seob Roh , Jong-Wan Jung
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14603 , H01L27/14689
摘要： According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode is formed in the semiconductor substrate on one side of the transfer gate, and a floating diffusion region is formed on the semiconductor substrate in the other side of the transfer gate. A local impurity region of a first conductivity type is formed to be partially overlapped the transfer gate between the photodiode and the floating diffusion region.
摘要翻译：根据CMOS图像器件及其制造方法，暗电流由局部杂质区域减小。图像装置包括半导体衬底和形成在半导体衬底的预定部分上并与半导体衬底电绝缘的传输栅极。在传输栅极的一侧上的半导体衬底中形成光电二极管，并且在传输门的另一侧的半导体衬底上形成浮动扩散区。第一导电类型的局部杂质区域形成为与光电二极管和浮动扩散区域之间的传输栅极部分重叠。

6. 发明授权

US07186583B2 Methods of fabricating image sensors including local interconnections 有权
标题翻译：制造图像传感器的方法，包括局部互连
公开(公告)号：US07186583B2
公开(公告)日：2007-03-06
申请号：US11348642
申请日：2006-02-07
申请人： Seok-Ha Lee
发明人： Seok-Ha Lee
IPC分类号： H01L21/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14654 , H01L27/14683
摘要： A pixel of a semiconductor-based image detector includes a photodetector, at least one switching device serially connected to the photodetector and a bypass device interposed between the photodetector and a power supply voltage. Accordingly, even though excess charges may be generated in the photodetector, the excess charges flow into the power supply through the bypass device. Blooming can thereby be reduced or suppressed.
摘要翻译：基于半导体的图像检测器的像素包括光电检测器，串联连接到光电检测器的至少一个开关器件和插在光电检测器和电源电压之间的旁路器件。因此，即使在光电检测器中可能产生过量电荷，过量的电荷通过旁路装置流入电源。因此可以减少或抑制盛开。

7. 发明申请

US20060284274A1 CMOS image device with local impurity region and method of manufacturing the same 有权
公开(公告)号：US20060284274A1
公开(公告)日：2006-12-21
申请号：US11373935
申请日：2006-03-13
申请人： Seok-ha Lee , Jae-seob Roh , Jong-Wan Jung
发明人： Seok-ha Lee , Jae-seob Roh , Jong-Wan Jung
IPC分类号： H01L27/14
CPC分类号： H01L27/14603 , H01L27/14689
摘要： According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode is formed in the semiconductor substrate on one side of the transfer gate, and a floating diffusion region is formed on the semiconductor substrate in the other side of the transfer gate. A local impurity region of a first conductivity type is formed to be partially overlapped the transfer gate between the photodiode and the floating diffusion region.

8. 发明申请

US20050196889A1 Methods of fabricating image sensors including local interconnections 有权
标题翻译：制造图像传感器的方法，包括局部互连
公开(公告)号：US20050196889A1
公开(公告)日：2005-09-08
申请号：US11095385
申请日：2005-03-31
申请人： Seok-Ha Lee
发明人： Seok-Ha Lee
IPC分类号： H01L27/14 , H01L27/146 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/374 , H01L21/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14654 , H01L27/14683
摘要： A pixel of a semiconductor-based image detector includes a photodetector, at least one switching device serially connected to the photodetector and a bypass device interposed between the photodetector and a power supply voltage. Accordingly, even though excess charges may be generated in the photodetector, the excess charges flow into the power supply through the bypass device. Blooming can thereby be reduced or suppressed.
摘要翻译：基于半导体的图像检测器的像素包括光电检测器，串联连接到光电检测器的至少一个开关器件和插在光电检测器和电源电压之间的旁路器件。因此，即使在光电检测器中可能产生过量电荷，过量的电荷通过旁路装置流入电源。因此可以减少或抑制盛开。

9. 发明授权

US07791158B2 CMOS image sensor including an interlayer insulating layer and method of manufacturing the same 有权
标题翻译：包括层间绝缘层的CMOS图像传感器及其制造方法
公开(公告)号：US07791158B2
公开(公告)日：2010-09-07
申请号：US11385958
申请日：2006-03-21
申请人： Hee-Geun Jeong , Jae-Seob Roh , Seok-Ha Lee
发明人： Hee-Geun Jeong , Jae-Seob Roh , Seok-Ha Lee
IPC分类号： H01L31/0232
CPC分类号： H01L27/14623 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14643
摘要： Provided are a CMOS image sensor and a method of manufacturing the same. The CMOS image sensor includes a semiconductor substrate having photodiodes and transistors. An interlayer insulating layer is formed on the resultant structure having the photodiodes and transistors, and light blocking patterns are formed on the interlayer insulating layer to surround the peripheries of the photodiodes.
摘要翻译：提供了一种CMOS图像传感器及其制造方法。 CMOS图像传感器包括具有光电二极管和晶体管的半导体衬底。在具有光电二极管和晶体管的合成结构上形成层间绝缘层，并且在层间绝缘层上形成遮光图案以包围光电二极管的周边。

10. 发明授权

US07595518B2 Doping mask and methods of manufacturing charge transfer image and microelectronic device using the same 失效
标题翻译：掺杂掩模和制造电荷转移图像器件的方法和使用其的微电子器件
公开(公告)号：US07595518B2
公开(公告)日：2009-09-29
申请号：US11708259
申请日：2007-02-20
申请人： Seok-ha Lee
发明人： Seok-ha Lee
IPC分类号： H01L27/148 , H01L29/768
CPC分类号： H01L21/266 , H01L21/0273 , H01L21/26513 , H01L27/14687 , H01L27/14689 , H01L27/14806 , H01L27/14887
摘要： Provided are a doping mask and methods of manufacturing a charge transfer image device and a microelectronic device using the same. The method includes forming a photoresist film on an entire surface of a substrate or sub-substrate having a peripheral circuit region and a pixel region, removing the photoresist film on an upper surface of the substrate intended for the peripheral circuit region and patterning the photoresist film on an upper surface of the substrate intended for the pixel region to form a photoresist pattern having an array of openings with a predetermined pitch, implanting ions at the same concentration level into the entire surface of the substrate using the photoresist pattern as a doping mask, and diffusing the implanted ions by annealing. The pitch is determined so that ions implanted through each opening diffuse toward those implanted through an adjacent one to form wells.
摘要翻译：提供了掺杂掩模和制造电荷转移图像器件的方法和使用其的微电子器件。该方法包括在具有外围电路区域和像素区域的基板或子基板的整个表面上形成光致抗蚀剂膜，去除用于外围电路区域的基板的上表面上的光致抗蚀剂膜，并且将光致抗蚀剂膜在用于像素区域的衬底的上表面上形成具有预定间距的开口阵列的光致抗蚀剂图案，使用光致抗蚀剂图案作为掺杂掩模将相同浓度水平的离子注入到衬底的整个表面中，并通过退火扩散注入的离子。确定沥青，使得通过每个开口注入的离子朝向通过相邻的孔注入的离子扩散以形成孔。

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