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1. 发明授权

US07910965B2 Image sensor circuits including shared floating diffusion regions 有权
标题翻译：图像传感器电路包括共享浮动扩散区域
公开(公告)号：US07910965B2
公开(公告)日：2011-03-22
申请号：US12139022
申请日：2008-06-13
申请人： Seok-Ha Lee , Chang-Rok Moon , Kang-Bok Lee
发明人： Seok-Ha Lee , Chang-Rok Moon , Kang-Bok Lee
IPC分类号： H01L31/113
CPC分类号： H01L27/14643 , H01L27/14641 , H04N5/3575 , H04N5/3741 , H04N5/37457 , H04N5/378
摘要： An image sensor can include a plurality of photoelectric conversion elements arranged in a matrix. A plurality of floating diffusion regions can be shared by respective corresponding pairs of adjacent photoelectric conversion elements. A plurality of charge-transmission transistors can respectively correspond to the photoelectric conversion elements, where each of the charge-transmission transistors are connected between a corresponding one of the plurality of photoelectric conversion elements and a corresponding one of the plurality of floating diffusion regions. A plurality of charge-transmission lines can be commonly connected to gates of respective corresponding pairs of adjacent rows of charge-transmission transistors, where each of the respective corresponding pairs of adjacent rows of charge-transmission transistors can be connected to respective ones of the plurality of photoelectric conversion elements in different adjacent rows of floating diffusion regions.
摘要翻译：图像传感器可以包括以矩阵形式布置的多个光电转换元件。多个浮动扩散区域可由相应的相应光电转换元件对共享。多个电荷传输晶体管可以分别对应于光电转换元件，其中每个电荷传输晶体管连接在多个光电转换元件中的相应一个光电转换元件和多个浮动扩散区域中相应的一个之间。多个电荷传输线可以共同地连接到相应的相应的一对电荷传输晶体管的栅极，其中各个相应的电荷传输晶体管对中的每一对可以连接到多个电荷传输晶体管中的相应行的不同相邻行的浮动扩散区域中的光电转换元件。

2. 发明申请

US20080308852A1 IMAGE SENSOR CIRCUITS INCLUDING SHARED FLOATING DIFFUSION REGIONS 有权
标题翻译：图像传感器电路，包括共享浮动扩展区域
公开(公告)号：US20080308852A1
公开(公告)日：2008-12-18
申请号：US12139022
申请日：2008-06-13
申请人： Seok-Ha Lee , Chang-Rok Moon , Kang-Bok Lee
发明人： Seok-Ha Lee , Chang-Rok Moon , Kang-Bok Lee
IPC分类号： H01L31/113
CPC分类号： H01L27/14643 , H01L27/14641 , H04N5/3575 , H04N5/3741 , H04N5/37457 , H04N5/378
摘要： An image sensor can include a plurality of photoelectric conversion elements arranged in a matrix. A plurality of floating diffusion regions can be shared by respective corresponding pairs of adjacent photoelectric conversion elements. A plurality of charge-transmission transistors can respectively correspond to the photoelectric conversion elements, where each of the charge-transmission transistors are connected between a corresponding one of the plurality of photoelectric conversion elements and a corresponding one of the plurality of floating diffusion regions. A plurality of charge-transmission lines can be commonly connected to gates of respective corresponding pairs of adjacent rows of charge-transmission transistors, where each of the respective corresponding pairs of adjacent rows of charge-transmission transistors can be connected to respective ones of the plurality of photoelectric conversion elements in different adjacent rows of floating diffusion regions.
摘要翻译：图像传感器可以包括以矩阵形式布置的多个光电转换元件。多个浮动扩散区域可由相应的相应光电转换元件对共享。多个电荷传输晶体管可以分别对应于光电转换元件，其中每个电荷传输晶体管连接在多个光电转换元件中的相应一个光电转换元件和多个浮动扩散区域中相应的一个之间。多个电荷传输线可以共同地连接到相应的相应的一对电荷传输晶体管的栅极，其中各个相应的电荷传输晶体管对中的每一对可以连接到多个电荷传输晶体管中的相应行的不同相邻行的浮动扩散区域中的光电转换元件。

3. 发明申请

US20060231898A1 CMOS image sensor and method of manufacturing the same 有权
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US20060231898A1
公开(公告)日：2006-10-19
申请号：US11385958
申请日：2006-03-21
申请人： Hee-Geun Jeong , Jae-Seob Roh , Seok-Ha Lee
发明人： Hee-Geun Jeong , Jae-Seob Roh , Seok-Ha Lee
IPC分类号： H01L23/62
CPC分类号： H01L27/14623 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14643
摘要： Provided are a CMOS image sensor and a method of manufacturing the same. The CMOS image sensor includes a semiconductor substrate having photodiodes and transistors. An interlayer insulating layer is formed on the resultant structure having the photodiodes and transistors, and light blocking patterns are formed on the interlayer insulating layer to surround the peripheries of the photodiodes.
摘要翻译：提供了一种CMOS图像传感器及其制造方法。 CMOS图像传感器包括具有光电二极管和晶体管的半导体衬底。在具有光电二极管和晶体管的合成结构上形成层间绝缘层，并且在层间绝缘层上形成遮光图案以包围光电二极管的周边。

4. 发明授权

US07186583B2 Methods of fabricating image sensors including local interconnections 有权
标题翻译：制造图像传感器的方法，包括局部互连
公开(公告)号：US07186583B2
公开(公告)日：2007-03-06
申请号：US11348642
申请日：2006-02-07
申请人： Seok-Ha Lee
发明人： Seok-Ha Lee
IPC分类号： H01L21/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14654 , H01L27/14683
摘要： A pixel of a semiconductor-based image detector includes a photodetector, at least one switching device serially connected to the photodetector and a bypass device interposed between the photodetector and a power supply voltage. Accordingly, even though excess charges may be generated in the photodetector, the excess charges flow into the power supply through the bypass device. Blooming can thereby be reduced or suppressed.
摘要翻译：基于半导体的图像检测器的像素包括光电检测器，串联连接到光电检测器的至少一个开关器件和插在光电检测器和电源电压之间的旁路器件。因此，即使在光电检测器中可能产生过量电荷，过量的电荷通过旁路装置流入电源。因此可以减少或抑制盛开。

5. 发明申请

US20050196889A1 Methods of fabricating image sensors including local interconnections 有权
标题翻译：制造图像传感器的方法，包括局部互连
公开(公告)号：US20050196889A1
公开(公告)日：2005-09-08
申请号：US11095385
申请日：2005-03-31
申请人： Seok-Ha Lee
发明人： Seok-Ha Lee
IPC分类号： H01L27/14 , H01L27/146 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/374 , H01L21/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14654 , H01L27/14683
摘要： A pixel of a semiconductor-based image detector includes a photodetector, at least one switching device serially connected to the photodetector and a bypass device interposed between the photodetector and a power supply voltage. Accordingly, even though excess charges may be generated in the photodetector, the excess charges flow into the power supply through the bypass device. Blooming can thereby be reduced or suppressed.
摘要翻译：基于半导体的图像检测器的像素包括光电检测器，串联连接到光电检测器的至少一个开关器件和插在光电检测器和电源电压之间的旁路器件。因此，即使在光电检测器中可能产生过量电荷，过量的电荷通过旁路装置流入电源。因此可以减少或抑制盛开。

6. 发明授权

US07791158B2 CMOS image sensor including an interlayer insulating layer and method of manufacturing the same 有权
标题翻译：包括层间绝缘层的CMOS图像传感器及其制造方法
公开(公告)号：US07791158B2
公开(公告)日：2010-09-07
申请号：US11385958
申请日：2006-03-21
申请人： Hee-Geun Jeong , Jae-Seob Roh , Seok-Ha Lee
发明人： Hee-Geun Jeong , Jae-Seob Roh , Seok-Ha Lee
IPC分类号： H01L31/0232
CPC分类号： H01L27/14623 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14643
摘要： Provided are a CMOS image sensor and a method of manufacturing the same. The CMOS image sensor includes a semiconductor substrate having photodiodes and transistors. An interlayer insulating layer is formed on the resultant structure having the photodiodes and transistors, and light blocking patterns are formed on the interlayer insulating layer to surround the peripheries of the photodiodes.
摘要翻译：提供了一种CMOS图像传感器及其制造方法。 CMOS图像传感器包括具有光电二极管和晶体管的半导体衬底。在具有光电二极管和晶体管的合成结构上形成层间绝缘层，并且在层间绝缘层上形成遮光图案以包围光电二极管的周边。

7. 发明申请

US20060226339A1 CMOS image sensor and method of fabricating the same 失效
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US20060226339A1
公开(公告)日：2006-10-12
申请号：US11377033
申请日：2006-03-16
申请人： Jae-Seob Roh , Seok-Ha Lee
发明人： Jae-Seob Roh , Seok-Ha Lee
IPC分类号： H01L27/00 , H01L31/00
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/1463 , H01L27/14643
摘要： Provided are a complementary metal oxide semiconductor (CMOS) image sensor and a method of fabricating the same, where the CMOS image sensor includes a photodiode, a drive transistor, a reset transistor, and a selection transistor; the drive transistor includes a threshold voltage adjustment region doped with impurities of a type substantially identical to that of impurities doped into a source and a drain of the drive transistor; and the CMOS image sensor includes pixels with expanded output signal ranges.
摘要翻译：提供了一种互补金属氧化物半导体（CMOS）图像传感器及其制造方法，其中CMOS图像传感器包括光电二极管，驱动晶体管，复位晶体管和选择晶体管; 驱动晶体管包括掺杂有与掺杂到驱动晶体管的源极和漏极中的杂质基本相同的杂质的阈值电压调整区域; 并且CMOS图像传感器包括具有扩展的输出信号范围的像素。

8. 发明授权

US06963092B2 Image sensors including photodetector and bypass device connected to a power supply voltage 有权
标题翻译：图像传感器包括连接到电源电压的光电检测器和旁路设备
公开(公告)号：US06963092B2
公开(公告)日：2005-11-08
申请号：US10442418
申请日：2003-05-21
申请人： Seok-Ha Lee
发明人： Seok-Ha Lee
IPC分类号： H01L27/14 , H01L27/146 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/374 , H01L27/148
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14654 , H01L27/14683
摘要： A pixel of a semiconductor-based image detector includes a photodetector, at least one switching device serially connected to the photodetector and a bypass device interposed between the photodetector and a power supply voltage. Accordingly, even though excess charges may be generated in the photodetector, the excess charges flow into the power supply through the bypass device. Blooming can thereby be reduced or suppressed.
摘要翻译：基于半导体的图像检测器的像素包括光电检测器，串联连接到光电检测器的至少一个开关器件和插在光电检测器和电源电压之间的旁路器件。因此，即使在光电检测器中可能产生过量电荷，过量的电荷通过旁路装置流入电源。因此可以减少或抑制盛开。

9. 发明申请

US20090201396A1 Methods for operating image sensors 有权
标题翻译：操作图像传感器的方法
公开(公告)号：US20090201396A1
公开(公告)日：2009-08-13
申请号：US12320923
申请日：2009-02-09
申请人： Yu-Yeon Yu , Seok-Ha Lee , Do-Hwan Kim
发明人： Yu-Yeon Yu , Seok-Ha Lee , Do-Hwan Kim
IPC分类号： H04N5/335
CPC分类号： H04N5/3594 , H01L27/14654
摘要： A method for operating image sensors is provided. The method for operating image sensors includes maintaining a charge transmission unit which transfers charges generated in a photoelectric conversion unit by responding to incident light to a charge detection unit in an inactive state; and toggling the charge transmission unit between an active state and an inactive state while a reset unit resets the charge detection unit, wherein the toggling is repeated multiple times while a reset unit which resets the charge detection unit is maintained in active state.
摘要翻译：提供了一种用于操作图像传感器的方法。用于操作图像传感器的方法包括维持一个电荷传输单元，该电荷传输单元通过响应入射光而将在光电转换单元中产生的电荷传送到处于非活动状态的电荷检测单元; 以及在复位单元复位所述电荷检测单元的同时，在所述电荷传输单元处于活动状态和非活动状态之间切换，其中在复位所述电荷检测单元的复位单元被维持在活动状态下，重复多次重复。

10. 发明授权

US07368771B2 CMOS image sensor and method of fabricating the same 失效
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US07368771B2
公开(公告)日：2008-05-06
申请号：US11377033
申请日：2006-03-16
申请人： Jae-Seob Roh , Seok-Ha Lee
发明人： Jae-Seob Roh , Seok-Ha Lee
IPC分类号： H01L31/062
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/1463 , H01L27/14643
摘要： Provided are a complementary metal oxide semiconductor (CMOS) image sensor and a method of fabricating the same, where the CMOS image sensor includes a photodiode, a drive transistor, a reset transistor, and a selection transistor; the drive transistor includes a threshold voltage adjustment region doped with impurities of a type substantially identical to that of impurities doped into a source and a drain of the drive transistor; and the CMOS image sensor includes pixels with expanded output signal ranges.
摘要翻译：提供了一种互补金属氧化物半导体（CMOS）图像传感器及其制造方法，其中CMOS图像传感器包括光电二极管，驱动晶体管，复位晶体管和选择晶体管; 驱动晶体管包括掺杂有与掺杂到驱动晶体管的源极和漏极中的杂质基本相同的杂质的阈值电压调整区域; 并且CMOS图像传感器包括具有扩展的输出信号范围的像素。

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