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1. 发明授权

US08174057B2 CMOS image device with local impurity region 有权
标题翻译：具有局部杂质区的CMOS图像器件
公开(公告)号：US08174057B2
公开(公告)日：2012-05-08
申请号：US12395757
申请日：2009-03-02
申请人： Seok-ha Lee , Jae-seob Roh , Jong-Wan Jung
发明人： Seok-ha Lee , Jae-seob Roh , Jong-Wan Jung
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14603 , H01L27/14689
摘要： According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode is formed in the semiconductor substrate on one side of the transfer gate, and a floating diffusion region is formed on the semiconductor substrate in the other side of the transfer gate. A local impurity region of a first conductivity type is formed to be partially overlapped the transfer gate between the photodiode and the floating diffusion region.
摘要翻译：根据CMOS图像器件及其制造方法，暗电流由局部杂质区域减小。图像装置包括半导体衬底和形成在半导体衬底的预定部分上并与半导体衬底电绝缘的传输栅极。在传输栅极的一侧上的半导体衬底中形成光电二极管，并且在传输门的另一侧的半导体衬底上形成浮动扩散区。第一导电类型的局部杂质区域形成为与光电二极管和浮动扩散区域之间的传输栅极部分重叠。

2. 发明申请

US20090166696A1 CMOS Image Device with Local Impurity Region 有权
标题翻译：具有本地杂质区域的CMOS图像设备
公开(公告)号：US20090166696A1
公开(公告)日：2009-07-02
申请号：US12395757
申请日：2009-03-02
申请人： Seok-ha Lee , Jae-seob Roh , Jong-Wan Jung
发明人： Seok-ha Lee , Jae-seob Roh , Jong-Wan Jung
IPC分类号： H01L31/112
CPC分类号： H01L27/14603 , H01L27/14689
摘要： According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode is formed in the semiconductor substrate on one side of the transfer gate, and a floating diffusion region is formed on the semiconductor substrate in the other side of the transfer gate. A local impurity region of a first conductivity type is formed to be partially overlapped the transfer gate between the photodiode and the floating diffusion region.
摘要翻译：根据CMOS图像器件及其制造方法，暗电流由局部杂质区域减小。图像装置包括半导体衬底和形成在半导体衬底的预定部分上并与半导体衬底电绝缘的传输栅极。在传输栅极的一侧上的半导体衬底中形成光电二极管，并且在传输门的另一侧的半导体衬底上形成浮动扩散区。第一导电类型的局部杂质区域形成为与光电二极管和浮动扩散区域之间的传输栅极部分重叠。

3. 发明授权

US07514733B2 CMOS image device and local impurity region and method of manufacturing the same 有权
标题翻译：具有局部杂质区的CMOS图像器件及其制造方法
公开(公告)号：US07514733B2
公开(公告)日：2009-04-07
申请号：US11373935
申请日：2006-03-13
申请人： Seok-ha Lee , Jae-seob Roh , Jong-Wan Jung
发明人： Seok-ha Lee , Jae-seob Roh , Jong-Wan Jung
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14603 , H01L27/14689
摘要： According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode is formed in the semiconductor substrate on one side of the transfer gate, and a floating diffusion region is formed on the semiconductor substrate in the other side of the transfer gate. A local impurity region of a first conductivity type is formed to be partially overlapped the transfer gate between the photodiode and the floating diffusion region.
摘要翻译：根据CMOS图像器件及其制造方法，暗电流由局部杂质区域减小。图像装置包括半导体衬底和形成在半导体衬底的预定部分上并与半导体衬底电绝缘的传输栅极。在传输栅极的一侧上的半导体衬底中形成光电二极管，并且在传输门的另一侧的半导体衬底上形成浮动扩散区。第一导电类型的局部杂质区域形成为与光电二极管和浮动扩散区域之间的传输栅极部分重叠。

4. 发明申请

US20060284274A1 CMOS image device with local impurity region and method of manufacturing the same 有权
公开(公告)号：US20060284274A1
公开(公告)日：2006-12-21
申请号：US11373935
申请日：2006-03-13
申请人： Seok-ha Lee , Jae-seob Roh , Jong-Wan Jung
发明人： Seok-ha Lee , Jae-seob Roh , Jong-Wan Jung
IPC分类号： H01L27/14
CPC分类号： H01L27/14603 , H01L27/14689
摘要： According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode is formed in the semiconductor substrate on one side of the transfer gate, and a floating diffusion region is formed on the semiconductor substrate in the other side of the transfer gate. A local impurity region of a first conductivity type is formed to be partially overlapped the transfer gate between the photodiode and the floating diffusion region.

5. 发明申请

US20070008420A1 Image sensor and method thereof 有权
标题翻译：图像传感器及其方法
公开(公告)号：US20070008420A1
公开(公告)日：2007-01-11
申请号：US11430093
申请日：2006-05-09
申请人： Jae-seob Roh
发明人： Jae-seob Roh
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H04N5/3745 , H04N5/376
摘要： An image sensor and method thereof. In an example, the image sensor, may include a pixel array including a plurality of unit pixels, each of the plurality of unit pixels having a charge transfer unit for transferring charges accumulated in an optoelectronic converter to a charge detector via a charge transfer driving signal. The example image sensor may further include a row driving unit generating a boosted voltage, the boosted voltage set to a boosted voltage level higher than a power voltage level, the boosted voltage selectively boosted in response to a boosting voltage variable control signal. The row driving unit may selectively apply the charge transfer driving signal to the pixel array. In another example, the method may include selectively adjusting a voltage level of a charge transfer driving voltage and transferring the charge transfer driving voltage to a charge transfer unit for controlling an operation of the charge transfer unit.
摘要翻译：一种图像传感器及其方法。在一个示例中，图像传感器可以包括包括多个单位像素的像素阵列，多个单位像素中的每一个具有电荷转移单元，用于经由电荷转移驱动信号将累积在光电转换器中的电荷转移到电荷检测器。示例图像传感器还可以包括行驱动单元，其产生升压电压，升压电压被设置为高于电源电压电平的升压电压电平，升压电压响应于升压电压可变控制信号而选择性升压。行驱动单元可以选择性地将电荷传递驱动信号施加到像素阵列。在另一示例中，该方法可以包括选择性地调整电荷转移驱动电压的电压电平并将电荷转移驱动电压转移到用于控制电荷转移单元的操作的电荷转移单元。

6. 发明授权

US07505071B2 Horizontal charge coupled device driving circuit with reduced power consumption, solid-state image-sensing device having the same, and driving method of the solid-state image-sensing device 失效
标题翻译：具有降低的功耗的水平电荷耦合器件驱动电路，具有该功能的固态图像感测器件，以及固体摄像器件的驱动方法
公开(公告)号：US07505071B2
公开(公告)日：2009-03-17
申请号：US11067023
申请日：2005-02-28
申请人： Jung-hyun Nam , Jae-seob Roh
发明人： Jung-hyun Nam , Jae-seob Roh
IPC分类号： H04N5/335
CPC分类号： H04N5/23241 , H04N5/3765
摘要： A horizontal charge coupled device (CCD) driving circuit, a solid-state image-sensing device having the same, and a method of driving the solid-state image-sensing device, transmits image signals using horizontal driving signals having a middle voltage during rising and falling of the horizontal signals. The middle voltage of the horizontal driving signals is generated when an equipotential switch is turned “on” while the output nodes of buffer circuits are in a floating state.
摘要翻译：水平电荷耦合器件（CCD）驱动电路，具有该水平电荷耦合器件（CCD）驱动电路的固态图像感测器件和驱动固态图像感测器件的方法，在上升期间使用具有中间电压的水平驱动信号传输图像信号和水平信号的下降。当等电位开关“开”时，缓冲电路的输出节点处于浮置状态时，产生水平驱动信号的中间电压。

7. 发明授权

US07397020B2 Image sensor using a boosted voltage and a method thereof 有权
标题翻译：使用升压电压的图像传感器及其方法
公开(公告)号：US07397020B2
公开(公告)日：2008-07-08
申请号：US11430093
申请日：2006-05-09
申请人： Jae-seob Roh
发明人： Jae-seob Roh
IPC分类号： H01L27/00 , H04N3/14
CPC分类号： H04N5/335 , H04N5/3745 , H04N5/376
摘要： An image sensor and method thereof. In an example, the image sensor, may include a pixel array including a plurality of unit pixels, each of the plurality of unit pixels having a charge transfer unit for transferring charges accumulated in an optoelectronic converter to a charge detector via a charge transfer driving signal. The example image sensor may further include a row driving unit generating a boosted voltage, the boosted voltage set to a boosted voltage level higher than a power voltage level, the boosted voltage selectively boosted in response to a boosting voltage variable control signal. The row driving unit may selectively apply the charge transfer driving signal to the pixel array. In another example, the method may include selectively adjusting a voltage level of a charge transfer driving voltage and transferring the charge transfer driving voltage to a charge transfer unit for controlling an operation of the charge transfer unit.
摘要翻译：一种图像传感器及其方法。在一个示例中，图像传感器可以包括包括多个单位像素的像素阵列，多个单位像素中的每一个具有电荷转移单元，用于经由电荷转移驱动信号将累积在光电转换器中的电荷转移到电荷检测器。示例性图像传感器还可以包括行驱动单元，其产生升压电压，升压电压被设置为高于电源电压电平的升压电压电平，升压电压响应于升压电压可变控制信号而选择性升压。行驱动单元可以选择性地将电荷传递驱动信号施加到像素阵列。在另一示例中，该方法可以包括选择性地调整电荷转移驱动电压的电压电平并将电荷转移驱动电压转移到用于控制电荷转移单元的操作的电荷转移单元。

8. 发明授权

US07218265B2 CMOS image capture device with self-correcting gain characteristic 有权
标题翻译：具有自校正增益特性的CMOS图像捕获器件
公开(公告)号：US07218265B2
公开(公告)日：2007-05-15
申请号：US11279141
申请日：2006-04-10
申请人： Jae-seob Roh , Jung-hyun Nam
发明人： Jae-seob Roh , Jung-hyun Nam
IPC分类号： H03M1/56
CPC分类号： H03M1/181 , H03M1/56 , H04N5/3651 , H04N5/378
摘要： A CMOS image capture device includes an array of pixel elements configured to convert an image received as light at a surface thereof into analog output signals. An image processing circuit is also provided. The image processing circuit is configured to generate digital output signals from which the image can be recreated in response to the analog output signals. The image processing circuit has self-adjustable gain characteristics. The image processing circuit includes a ramp signal generator having an integration circuit therein with an adjustable RC time constant. The integration circuit includes an operational amplifier and a resistor array and/or a capacitor array electrically coupled to the operational amplifier. This resistor array and/or capacitor array enables the adjustable RC time constant.
摘要翻译： CMOS图像捕获装置包括被配置为将在其表面处接收为光的图像转换为模拟输出信号的像素元件的阵列。还提供了图像处理电路。图像处理电路被配置为产生数字输出信号，响应于模拟输出信号，可以从其重新创建图像。图像处理电路具有自调节增益特性。图像处理电路包括其中具有可调节RC时间常数的积分电路的斜坡信号发生器。积分电路包括运算放大器和电耦合到运算放大器的电阻器阵列和/或电容器阵列。该电阻器阵列和/或电容器阵列使得可调RC时间常数。

9. 发明申请

US20050253948A1 Horizontal charge coupled device driving circuit with reduced power consumption, solid-state image-sensing device having the same, and driving method of the solid-state image-sensing device 失效
标题翻译：具有降低的功耗的水平电荷耦合器件驱动电路，具有该功能的固态图像感测器件，以及固体摄像器件的驱动方法
公开(公告)号：US20050253948A1
公开(公告)日：2005-11-17
申请号：US11067023
申请日：2005-02-28
申请人： Jung-hyun Nam , Jae-seob Roh
发明人： Jung-hyun Nam , Jae-seob Roh
IPC分类号： H01L27/148 , H04N3/14 , H04N5/335 , H04N5/372 , H04N5/376
CPC分类号： H04N5/23241 , H04N5/3765
摘要： A horizontal charge coupled device (CCD) driving circuit, a solid-state image-sensing device having the same, and a method of driving the solid-state image-sensing device, transmits image signals using horizontal driving signals having a middle voltage during rising and falling of the horizontal signals. The middle voltage of the horizontal driving signals is generated when an equipotential switch is turned “on” while the output nodes of buffer circuits are in a floating state.
摘要翻译：水平电荷耦合器件（CCD）驱动电路，具有该水平电荷耦合器件（CCD）驱动电路的固态图像感测器件和驱动固态图像感测器件的方法，在上升期间使用具有中间电压的水平驱动信号传输图像信号和水平信号的下降。当等电位开关“开”时，缓冲电路的输出节点处于浮置状态时，产生水平驱动信号的中间电压。

10. 发明申请

US20050195305A1 Biasing circuits, solid state imaging devices, and methods of manufacturing the same 审中-公开
标题翻译：偏置电路，固态成像装置及其制造方法
公开(公告)号：US20050195305A1
公开(公告)日：2005-09-08
申请号：US11063105
申请日：2005-02-22
申请人： Jeong-ho Lyu , Jung-hyun Nam , Jae-seob Roh
发明人： Jeong-ho Lyu , Jung-hyun Nam , Jae-seob Roh
IPC分类号： H01L27/146 , H01L21/822 , H01L21/8247 , H01L23/58 , H01L27/04 , H01L27/115 , H01L27/148 , H01L29/788 , H01L29/792 , H04N5/335 , H04N5/372
CPC分类号： H01L27/14806
摘要： A biasing circuit for a charge-coupled device (CCD) includes one or more transistors and a nonvolatile memory cell connected in series between a first electric potential node and a second electric potential node and configured to produce a bias voltage at a node between the nonvolatile memory and one of the one or more transistors. The one or more transistors may include one or more transistors coupled in series between a first terminal of the nonvolatile memory cell and the first electric potential node, and one or more transistors coupled in series between a second terminal of the nonvolatile memory cell and the second electric potential node. The nonvolatile memory cell may include a flash memory cell, e.g., a stacked-gate-type flash memory cell and/or a split-gate-type flash memory cell.
摘要翻译：用于电荷耦合器件（CCD）的偏置电路包括串联连接在第一电势节点和第二电位节点之间的一个或多个晶体管和非易失性存储器单元，并且被配置为在非易失性存储器之间的节点产生偏置电压存储器和一个或多个晶体管中的一个。一个或多个晶体管可以包括串联耦合在非易失性存储单元的第一端和第一电位节点之间的一个或多个晶体管，以及串联耦合在非易失性存储单元的第二端子与第二电位节点之间的一个或多个晶体管电位节点。非易失性存储器单元可以包括闪存单元，例如堆叠栅型闪存单元和/或分离栅型闪存单元。

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