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1. 发明申请

US20060145215A1 Image sensor having 3-dimensional transfer transistor and its method of manufacture 有权
标题翻译：具有三维转移晶体管的图像传感器及其制造方法
公开(公告)号：US20060145215A1
公开(公告)日：2006-07-06
申请号：US11325975
申请日：2006-01-04
申请人： Kee-Hyun Paik , Jeong-Ho Lyu , Chang-Sub Lee , Keun-Ho Lee
发明人： Kee-Hyun Paik , Jeong-Ho Lyu , Chang-Sub Lee , Keun-Ho Lee
IPC分类号： H01L31/062
CPC分类号： H01L27/14603 , H01L27/14689
摘要： In an embodiment, an image sensor includes an isolation layer disposed in a semiconductor substrate to define a first active region and a second active region extending from the first active region. A photodiode is disposed in a portion of the first active region. A floating diffusion region is provided in the second active region at a position spaced apart from the photodiode. A transfer gate electrode is disposed on the second active region between the photodiode and the floating diffusion region. The transfer gate electrode is disposed to cover both sidewalls and an upper portion of the second active region. The transfer gate electrode has a region extending onto the first active region and overlapping the photodiode. The photodiode has a protrusion into the second active region at the portion adjacent to the transfer gate electrode. A deep n-impurity region of the photodiode extends in the protrusion.
摘要翻译：在一个实施例中，图像传感器包括设置在半导体衬底中以限定第一有源区和从第一有源区延伸的第二有源区的隔离层。光电二极管设置在第一有源区的一部分中。浮动扩散区设置在与光电二极管间隔开的位置处的第二有源区中。传输栅电极设置在光电二极管和浮动扩散区之间的第二有源区上。转移栅电极设置成覆盖第二有源区的两个侧壁和上部。传输栅电极具有延伸到第一有源区上并与光电二极管重叠的区域。光电二极管在与传输栅电极相邻的部分具有到第二有源区的突起。光电二极管的深n杂质区域在突起中延伸。

2. 发明申请

US20100207170A1 IMAGE SENSOR HAVING 3-DIMENSIONAL TRANSFER TRANSISTOR AND ITS METHOD OF MANUFACTURE 审中-公开
标题翻译：具有三维传输晶体管的图像传感器及其制造方法
公开(公告)号：US20100207170A1
公开(公告)日：2010-08-19
申请号：US12770957
申请日：2010-04-30
申请人： Kee-Hyun Paik , Jeong-Ho Lyu , Chang-Sub Lee , Keun-Ho Lee
发明人： Kee-Hyun Paik , Jeong-Ho Lyu , Chang-Sub Lee , Keun-Ho Lee
IPC分类号： H01L31/112
CPC分类号： H01L27/14603 , H01L27/14689
摘要： In an embodiment, an image sensor includes an isolation layer disposed in a semiconductor substrate to define a first active region and a second active region extending from the first active region. A photodiode is disposed in a portion of the first active region. A floating diffusion region is provided in the second active region at a position spaced apart from the photodiode. A transfer gate electrode is disposed on the second active region between the photodiode and the floating diffusion region. The transfer gate electrode is disposed to cover both sidewalls and an upper portion of the second active region. The transfer gate electrode has a region extending onto the first active region and overlapping the photodiode. The photodiode has a protrusion into the second active region at the portion adjacent to the transfer gate electrode. A deep n-impurity region of the photodiode extends in the protrusion.
摘要翻译：在一个实施例中，图像传感器包括设置在半导体衬底中以限定第一有源区和从第一有源区延伸的第二有源区的隔离层。光电二极管设置在第一有源区的一部分中。浮动扩散区设置在与光电二极管间隔开的位置处的第二有源区中。传输栅电极设置在光电二极管和浮动扩散区之间的第二有源区上。转移栅电极设置成覆盖第二有源区的两个侧壁和上部。传输栅电极具有延伸到第一有源区上并与光电二极管重叠的区域。光电二极管在与传输栅电极相邻的部分具有到第二有源区的突起。光电二极管的深n杂质区域在突起中延伸。

3. 发明申请

US20070164332A1 Shared-pixel-type image sensors for controlling capacitance of floating diffusion region 失效
标题翻译：用于控制浮动扩散区电容的共享像素型图像传感器
公开(公告)号：US20070164332A1
公开(公告)日：2007-07-19
申请号：US11652602
申请日：2007-01-12
申请人： Kee-Hyun Paik , Seok-ha Lee , Kang-bok Lee
发明人： Kee-Hyun Paik , Seok-ha Lee , Kang-bok Lee
IPC分类号： H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14641 , H04N5/335
摘要： A shared-pixel-type image sensor includes a semiconductor substrate, four photoelectric conversion elements disposed adjacent to one another in one direction on the semiconductor substrate, two first transmission elements transmitting charges accumulated in two adjacent ones of the photoelectric conversion elements to a first floating diffusion region, respectively, two second transmission elements transmitting charges accumulated in the other two adjacent photoelectric conversion elements to a second floating diffusion region electrically coupled with the first floating diffusion region, respectively, MOS capacitors that are electrically coupled with the first or second floating diffusion region, a reset element resetting the charges of the first and second floating diffusion regions to a reference value, and a drive element and an select element outputting the charges of the first or second floating diffusion region.
摘要翻译：共享像素型图像传感器包括半导体基板，在半导体基板上沿一个方向彼此相邻布置的四个光电转换元件，两个第一传输元件，其将在两个相邻的光电转换元件中累积的电荷传输到第一浮置扩散区域分别将在另外两个相邻的光电转换元件中累积的电荷的两个第二传输元件分别连接到与第一浮动扩散区电耦合的第二浮动扩散区域，与第一或第二浮动扩散电耦合的MOS电容器区域，将第一和第二浮动扩散区域的电荷重置为基准值的复位元件，以及输出第一或第二浮动扩散区域的电荷的驱动元件和选择元件。

4. 发明授权

US08264579B2 Shared-pixel-type image sensors for controlling capacitance of floating diffusion region 失效
标题翻译：用于控制浮动扩散区电容的共享像素型图像传感器
公开(公告)号：US08264579B2
公开(公告)日：2012-09-11
申请号：US11652602
申请日：2007-01-12
申请人： Kee-Hyun Paik , Seok-ha Lee , Kang-bok Lee
发明人： Kee-Hyun Paik , Seok-ha Lee , Kang-bok Lee
IPC分类号： H04N3/14 , H01L27/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14641 , H04N5/335
摘要： A shared-pixel-type image sensor includes a semiconductor substrate, four photoelectric conversion elements disposed adjacent to one another in one direction on the semiconductor substrate, two first transmission elements transmitting charges accumulated in two adjacent ones of the photoelectric conversion elements to a first floating diffusion region, respectively, two second transmission elements transmitting charges accumulated in the other two adjacent photoelectric conversion elements to a second floating diffusion region electrically coupled with the first floating diffusion region, respectively, MOS capacitors that are electrically coupled with the first or second floating diffusion region, a reset element resetting the charges of the first and second floating diffusion regions to a reference value, and a drive element and an select element outputting the charges of the first or second floating diffusion region.
摘要翻译：共享像素型图像传感器包括半导体基板，在半导体基板上沿一个方向彼此相邻布置的四个光电转换元件，两个第一传输元件，其将在两个相邻的光电转换元件中累积的电荷传输到第一浮置扩散区域分别将在另外两个相邻的光电转换元件中累积的电荷的两个第二传输元件分别连接到与第一浮动扩散区电耦合的第二浮动扩散区域，与第一或第二浮动扩散电耦合的MOS电容器区域，将第一和第二浮动扩散区域的电荷重置为基准值的复位元件，以及输出第一或第二浮动扩散区域的电荷的驱动元件和选择元件。

5. 发明授权

US07741143B2 Image sensor having 3-dimensional transfer transistor and its method of manufacture 有权
标题翻译：具有三维转移晶体管的图像传感器及其制造方法
公开(公告)号：US07741143B2
公开(公告)日：2010-06-22
申请号：US11325975
申请日：2006-01-04
申请人： Kee-Hyun Paik , Jeong-Ho Lyu , Chang-Sub Lee , Keun-Ho Lee
发明人： Kee-Hyun Paik , Jeong-Ho Lyu , Chang-Sub Lee , Keun-Ho Lee
IPC分类号： H01L31/103
CPC分类号： H01L27/14603 , H01L27/14689
摘要： In an embodiment, an image sensor includes an isolation layer disposed in a semiconductor substrate to define a first active region and a second active region extending from the first active region. A photodiode is disposed in a portion of the first active region. A floating diffusion region is provided in the second active region at a position spaced apart from the photodiode. A transfer gate electrode is disposed on the second active region between the photodiode and the floating diffusion region. The transfer gate electrode is disposed to cover both sidewalls and an upper portion of the second active region. The transfer gate electrode has a region extending onto the first active region and overlapping the photodiode. The photodiode has a protrusion into the second active region at the portion adjacent to the transfer gate electrode. A deep n-impurity region of the photodiode extends in the protrusion.
摘要翻译：在一个实施例中，图像传感器包括设置在半导体衬底中以限定第一有源区和从第一有源区延伸的第二有源区的隔离层。光电二极管设置在第一有源区的一部分中。浮动扩散区设置在与光电二极管间隔开的位置处的第二有源区中。传输栅电极设置在光电二极管和浮动扩散区之间的第二有源区上。转移栅电极设置成覆盖第二有源区的两个侧壁和上部。传输栅电极具有延伸到第一有源区上并与光电二极管重叠的区域。光电二极管在与传输栅电极相邻的部分具有到第二有源区的突起。光电二极管的深n杂质区域在突起中延伸。

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