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    • 4. 发明授权
    • Circuit and method for stable fuse detection
    • 用于稳定保险丝检测的电路和方法
    • US07482855B2
    • 2009-01-27
    • US11897244
    • 2007-08-29
    • Christian N. MohrScott E. Smith
    • Christian N. MohrScott E. Smith
    • H01H37/76
    • G11C17/18
    • A fuse state detection circuit is comprised of a first fuse element, a second fuse element, and an output for carrying an output signal, the output signal represents a first logic state when the first fuse element is blown and the second fuse element is unblown and the output signal represents a second logic state when the first element is unblown and the second element is blown. The fuse state detection circuit produces an output signal whose state is recoverable from a negative triggering event and is capable of resolving itself to the correct state without the need for a reset pulse. Methods of using the fuse state detection circuit, such as a method of using fuse elements to control a setting within an electronic circuit, the improvement comprising using a pair of fuse elements to control a single setting, are also given.
    • 熔丝状态检测电路包括第一熔丝元件,第二熔丝元件和用于承载输出信号的输出端,所述输出信号表示当第一熔丝元件被吹制而第二熔丝元件未被吹出时的第一逻辑状态, 当第一元件未吹出并且第二元件被吹动时,输出信号表示第二逻辑状态。 熔丝状态检测电路产生其状态可从负触发事件中恢复的输出信号,并且能够将其自身解析为正确状态而无需复位脉冲。 还提供了使用熔丝状态检测电路的方法,例如使用熔丝元件来控制电子电路内的设置的方法,包括使用一对熔丝元件来控制单个设置的改进。
    • 5. 发明授权
    • Circuit and method for stable fuse detection
    • 用于稳定保险丝检测的电路和方法
    • US07276955B2
    • 2007-10-02
    • US11106100
    • 2005-04-14
    • Christian N. MohrScott E. Smith
    • Christian N. MohrScott E. Smith
    • H01H37/76
    • G11C17/18
    • A fuse state detection circuit is comprised of a first fuse element, a second fuse element, and an output for carrying an output signal, the output signal represents a first logic state when the first fuse element is blown and the second fuse element is unblown and the output signal represents a second logic state when the first element is unblown and the second element is blown. The fuse state detection circuit produces an output signal whose state is recoverable from a negative triggering event and is capable of resolving itself to the correct state without the need for a reset pulse. Methods of using the fuse state detection circuit, such as a method of using fuse elements to control a setting within an electronic circuit, the improvement comprising using a pair of fuse elements to control a single setting, are also given.
    • 熔丝状态检测电路包括第一熔丝元件,第二熔丝元件和用于承载输出信号的输出端,所述输出信号表示当第一熔丝元件被吹制而第二熔丝元件未被吹出时的第一逻辑状态, 当第一元件未吹出并且第二元件被吹动时,输出信号表示第二逻辑状态。 熔丝状态检测电路产生其状态可从负触发事件中恢复的输出信号,并且能够将其自身解析为正确状态而无需复位脉冲。 还提供了使用熔丝状态检测电路的方法,例如使用熔丝元件来控制电子电路内的设置的方法,包括使用一对熔丝元件来控制单个设置的改进。
    • 6. 发明授权
    • Reduced power redundancy address decoder and comparison circuit
    • 减少冗余地址解码器和比较电路
    • US07145817B2
    • 2006-12-05
    • US11015703
    • 2004-12-17
    • Christian N. MohrScott E. Smith
    • Christian N. MohrScott E. Smith
    • G11C7/00
    • G11C29/83G11C29/844
    • A redundancy address decoder for a memory having at least one bank of memory segmented into a plurality of memory blocks. The redundancy address decoder includes a plurality of redundancy comparison circuitry coupled to a respective programmable element block storing addresses that are mapped to redundant memory of a memory plane. The redundancy address decoder further includes redundancy driver select logic coupled to each of the redundancy comparison circuitry to activate a selected one of the redundancy comparison circuitry for comparing a portion of a memory address corresponding to a memory location with the programmed addresses of the respective programmable element blocks, which leads to power reduction for column accesses to the memory device. The selection of the redundancy driver is based on the memory bank in which the memory location is located.
    • 一种用于存储器的冗余地址解码器,其具有被分割成多个存储块的至少一组存储器。 冗余地址解码器包括耦合到存储映射到存储器平面的冗余存储器的地址的相应可编程元件块的多个冗余比较电路。 冗余地址解码器还包括耦合到冗余比较电路中的每一个的冗余驱动器选择逻辑,以激活冗余比较电路中的所选择的一个,用于将对应于存储器位置的存储器地址的一部分与相应可编程元件的编程地址进行比较 块,这导致对存储器设备的列访问的功率降低。 冗余驱动器的选择基于存储器位置所在的存储体。
    • 7. 发明授权
    • Burn-in mode detect circuit for semiconductor device
    • 半导体器件的老化模式检测电路
    • US06546510B1
    • 2003-04-08
    • US09351384
    • 1999-07-13
    • Kallol MazumderScott E. SmithFrancis Hii
    • Kallol MazumderScott E. SmithFrancis Hii
    • G11C2900
    • G11C29/50G11C11/401G11C29/38G11C29/46
    • A synchronous dynamic random access memory (SDRAM) is disclosed that includes an operational mode in which the functionality of the SDRAM can be tested under burn-in conditions. The SDRAM can be placed in a burn-in monitor mode in which burn-in information is provided at data outputs, in lieu of memory cell information. The burn-in monitor mode helps to ensure that the SDRAM functions are properly exercised during burn-in. The preferred embodiment includes a data buffer coupled to a data bus and a mode register. The mode register stores burn-in mode data. In a standard mode of operation, the data buffer couples the data bus to data outputs (D0-Dz). In a burn-in monitor mode of operation, the data buffer couples the burn-in mode data to the data outputs (D0-Dz).
    • 公开了一种同步动态随机存取存储器(SDRAM),其包括可在老化条件下测试SDRAM功能的操作模式。 可以将SDRAM放置在老化监视器模式中,其中在数据输出端提供老化信息,代替存储器单元信息。 老化监视器模式有助于确保在老化期间SDRAM功能被正确地运行。 优选实施例包括耦合到数据总线和模式寄存器的数据缓冲器。 模式寄存器存储老化模式数据。 在标准操作模式下,数据缓冲器将数据总线耦合到数据输出(D0-Dz)。 在老化监视器操作模式下,数据缓冲器将老化模式数据耦合到数据输出(D0-Dz)。
    • 8. 发明授权
    • Circuit for driving conductive line and testing conductive line for current leakage
    • 用于驱动导线的电路和测试导线用于漏电
    • US06242936B1
    • 2001-06-05
    • US09366232
    • 1999-08-03
    • Michael Duc HoDuy-Loan T. LeScott E. Smith
    • Michael Duc HoDuy-Loan T. LeScott E. Smith
    • G01R3126
    • G01R31/3004
    • A circuit (100) that drives word lines and tests a word line (102) in a semiconductor device is disclosed. A charge circuit (108) couples a supply voltage (VPP) to a charge node (106) according to a potential at a boot node (110). The charge node (106) supplies a charge voltage for the word line (102). In a standard cycle, the boot node (110) is charged to a high voltage, and maintained at the high potential, to keep the word line (102) charged. In a test cycle, the boot node (110) is charged to a high voltage, and then discharged to a low voltage, thereby isolating the charge node (106) and the word line (102). In the event the word line (102) suffers from current leakage, a drop in potential will be detected at the charge rode (106).
    • 公开了一种在半导体器件中驱动字线并测试字线(102)的电路(100)。 充电电路(108)根据引导节点(110)处的电位将电源电压(VPP)耦合到充电节点(106)。 充电节点(106)为字线(102)提供充电电压。 在标准周期中,引导节点(110)被充电到高电压并保持在高电位,以保持字线(102)充电。 在测试周期中,引导节点(110)被充电到高电压,然后被放电到低电压,从而隔离充电节点(106)和字线(102)。 在字线(102)遇到电流泄漏的情况下,在充电路径(106)处将检测到电位下降。
    • 9. 发明授权
    • Timing circuit for high voltage testing
    • 高电压测试定时电路
    • US06201752B1
    • 2001-03-13
    • US09398240
    • 1999-09-20
    • Anh BuiScott E. SmithDuy-Loan T. Le
    • Anh BuiScott E. SmithDuy-Loan T. Le
    • G11C700
    • C07H13/06C07H15/18C07H17/08C07H19/16G11C5/143G11C7/1072G11C11/401G11C29/028G11C29/50G11C29/50012
    • A circuit is designed with a detector circuit (700) coupled between a supply voltage terminal (705) and a reference voltage terminal (755). The detector circuit produces a first control signal in response to a detected mode and produces a second control signal in response to another mode. A first circuit (205, 207) including a delay circuit receives the first control signal and a third control signal. The delay circuit produces a fourth control signal at an output terminal (215) in response to the first and third control signals. A second circuit (203) receives the second control signal and the third control signal. The second circuit produces the fourth control signal at the output terminal in response to the second and third control signals.
    • 电路设计有耦合在电源电压端(705)和参考电压端(755)之间的检测器电路(700)。 检测器电路响应于检测模式产生第一控制信号,并且响应于另一模式产生第二控制信号。 包括延迟电路的第一电路(205,207)接收第一控制信号和第三控制信号。 延迟电路响应于第一和第三控制信号在输出端(215)产生第四控制信号。 第二电路(203)接收第二控制信号和第三控制信号。 第二电路响应于第二和第三控制信号在输出端产生第四控制信号。