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1. 发明申请

US20070284656A1 Conductive hard mask to protect patterned features during trench etch 失效
标题翻译：导电硬掩模，用于在沟槽蚀刻期间保护图案特征
公开(公告)号：US20070284656A1
公开(公告)日：2007-12-13
申请号：US11444936
申请日：2006-05-31
申请人： Steven J. Radigan , Usha Raghuram , Samuel V. Dunton , Michael W. Konevecki
发明人： Steven J. Radigan , Usha Raghuram , Samuel V. Dunton , Michael W. Konevecki
IPC分类号： H01L29/76 , H01L21/8234
CPC分类号： H01L23/5252 , H01L27/1021 , H01L29/6609 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for forming patterned features using a conductive hard mask, where the conductive hard mask protects those features during a subsequent trench etch to form Damascene conductors providing electrical connection to those features from above. The thickness of the hard mask provides a margin to avoid overetch during the trench etch which may be harmful to device performance. The method is advantageously used in formation of a monolithic three dimensional memory array.
摘要翻译：提供了一种使用导电硬掩模形成图案化特征的方法，其中导电硬掩模在随后的沟槽蚀刻期间保护这些特征以形成提供从上方到那些特征的电连接的大马士革导体。硬掩模的厚度提供了一个余量，以避免在沟槽蚀刻期间的过蚀刻，这可能对器件性能有害。该方法有利地用于形成单片三维存储器阵列。

2. 发明授权

US07307013B2 Nonselective unpatterned etchback to expose buried patterned features 失效
标题翻译：曝光掩埋图案特征的无选择性无图案蚀刻
公开(公告)号：US07307013B2
公开(公告)日：2007-12-11
申请号：US10883417
申请日：2004-06-30
申请人： Usha Raghuram , Michael W. Konevecki , Samuel V. Dunton
发明人： Usha Raghuram , Michael W. Konevecki , Samuel V. Dunton
IPC分类号： H01L21/461 , C03C25/68 , C23F1/00
CPC分类号： H01L21/7684 , H01L21/31055 , H01L21/31116 , H01L21/32136 , H01L21/32137 , H01L21/76819 , H01L27/101 , H01L27/1021
摘要： A method for etching to form a planarized surface is disclosed. Spaced-apart features are formed of a first material, the first material either conductive or insulating. A second material is deposited over and between the first material. The second material is either insulating or conductive, opposite the conductivity of the first material. The second material is preferably self-planarizing during deposition. An unpatterned etch is performed to etch the second material and expose the top of the buried features of the first material. The etch is preferably a two-stage etch: The first stage is selective to the second material. When the second material is exposed, the etch chemistry is changed such that the etch is nonselective, etching the first material and the second material at substantially the same rate until the buried features are exposed across the wafer, producing a substantially planar surface.
摘要翻译：公开了一种用于蚀刻以形成平坦化表面的方法。隔开的特征由第一材料形成，第一材料是导电的或绝缘的。第二材料沉积在第一材料之上和之间。第二种材料是绝缘的或导电的，与第一种材料的电导率相反。第二种材料优选在沉积期间是自平面化的。执行未图案化的蚀刻以蚀刻第二材料并暴露第一材料的掩埋特征的顶部。蚀刻优选是两阶段蚀刻：第一阶段对第二材料是选择性的。当暴露第二材料时，蚀刻化学物质被改变，使得蚀刻是非选择性的，以基本上相同的速率蚀刻第一材料和第二材料，直到掩埋特征暴露在晶片之外，产生基本平坦的表面。

3. 发明授权

US07291562B2 Method to form topography in a deposited layer above a substrate 失效
标题翻译：在基材上方的沉积层中形成形貌的方法
公开(公告)号：US07291562B2
公开(公告)日：2007-11-06
申请号：US11298015
申请日：2005-12-09
申请人： Yung-Tin Chen , Samuel V Dunton
发明人： Yung-Tin Chen , Samuel V Dunton
IPC分类号： H01L21/302
CPC分类号： H01L21/31053 , H01L21/3212 , H01L21/76819 , H01L21/8221 , H01L23/544 , H01L23/585 , H01L27/0688 , H01L27/1021 , H01L27/105 , H01L2223/54426 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： In the present invention a dummy structure is formed in a first deposited layer in order to create topography, generally a raised area, in a deposited layer formed above and later than the first deposited layer. This topography may be advantageous in later steps. In one embodiment, transferred topography allows an alignment or overlay mark obscured by an opaque layer to be located by this enhanced topography. In another embodiment, a raised volume of dielectric material prevents features at the outside of an array area from being overpolished during a CMP step. This method may prove useful in other contexts as well. The size, shape, and placement of the dummy structure is tailored to form the desired excess volume.
摘要翻译：在本发明中，在第一沉积层中形成虚拟结构，以便在形成于第一沉积层之上和之后的沉积层中形成一般凸起区域的形貌。这种形态在后面的步骤中可能是有利的。在一个实施例中，转移的形貌允许由不透明层遮蔽的对准或覆盖标记由该增强的形貌定位。在另一个实施例中，凸起体积的介电材料防止阵列区域外部的特征在CMP步骤期间被过度抛光。这种方法也可能在其他情况下也是有用的。调整虚拟结构的大小，形状和位置以形成所需的过剩体积。

4. 发明授权

US06586326B2 Metal planarization system 失效
公开(公告)号：US06586326B2
公开(公告)日：2003-07-01
申请号：US09804783
申请日：2001-03-13
申请人： Jayanthi Pallinti , Samuel V. Dunton , Ronald J. Nagahara
发明人： Jayanthi Pallinti , Samuel V. Dunton , Ronald J. Nagahara
IPC分类号： H01L2100
CPC分类号： H01L21/288 , H01L21/7684
摘要： A method for restoring an eroded portion in an exposed upper surface cavity of a metallic element in a microelectronic device, where the metallic element has a hardness, and the metallic element is laterally surrounded by lateral elements, where at least one structure within the lateral elements has a hardness that is greater than the hardness of the metallic element. A precursor material is deposited in at least the cavity of the upper surface of the metallic element. The precursor material is deposited to a thickness that at least fills the cavity of the upper surface of the metallic element. The precursor material has a hardness that is less than the hardness of the at least one structure within the lateral elements. The precursor material is removed as necessary from the lateral elements, and the precursor material is planarized. Only the precursor material within the cavity of the upper surface of the metallic element is selectively replaced with a desired material. The eroded portion of the metallic element is thereby restored. By removing precursor material from those areas in which no replacement with the desired material is wanted, the desired material is selectively deposited only in those place where the precursor material remains, and where it is desired to fill in the cavities or dishing that was created in the areas of the softer metallic elements between the harder laterally surrounding elements during a prior chemical mechanical polishing process. Thus, the microelectronic device is more fully planarized, as the dishing is filled in, and the metallic element is supplemented with an additional amount of desired material.

5. 发明申请

US20100297834A1 METHOD FOR REDUCING DIELECTRIC OVERETCH USING A DIELECTRIC ETCH STOP AT A PLANAR SURFACE 有权
标题翻译：在平面表面上使用介质蚀刻停止来减少介电覆盖的方法
公开(公告)号：US20100297834A1
公开(公告)日：2010-11-25
申请号：US12849292
申请日：2010-08-03
申请人： Samuel V. Dunton , Christopher J. Petti , Usha Raghuram
发明人： Samuel V. Dunton , Christopher J. Petti , Usha Raghuram
IPC分类号： H01L21/20 , H01L21/31
CPC分类号： H01L27/1021 , H01L21/76802 , H01L21/76829 , Y10S438/90
摘要： A substantially planar surface coexposes conductive or semiconductor features and a dielectric etch stop material. A second dielectric material, different from the dielectric etch stop material, is deposited on the substantially planar surface. A selective etch etches a hole or trench in the second dielectric material, so that the etch stops on the conductive or semiconductor feature and the dielectric etch stop material. In a preferred embodiment the substantially planar surface is formed by filling gaps between the conductive or semiconductor features with a first dielectric such as oxide, recessing the oxide, filling with a second dielectric such as nitride, then planarizing to coexpose the nitride and the conductive or semiconductor features.
摘要翻译：基本平坦的表面共同导电或半导体特征和介电蚀刻停止材料。不同于介电蚀刻停止材料的第二电介质材料沉积在基本平坦的表面上。选择性蚀刻蚀刻第二介电材料中的孔或沟槽，使得蚀刻停止在导电或半导体特征和电介质蚀刻停止材料上。在优选实施例中，通过将导电或半导体特征之间的间隙填充到诸如氧化物的第一电介质，使氧化物凹陷，用第二电介质（例如氮化物）填充，然后平坦化以共存氮化物和导电或半导体功能。

6. 发明授权

US07422985B2 Method for reducing dielectric overetch using a dielectric etch stop at a planar surface 有权
标题翻译：在平坦表面使用电介质蚀刻停止来减少介电过程的方法
公开(公告)号：US07422985B2
公开(公告)日：2008-09-09
申请号：US11090526
申请日：2005-03-25
申请人： Samuel V Dunton , Christopher J Petti , Usha Raghuram
发明人： Samuel V Dunton , Christopher J Petti , Usha Raghuram
IPC分类号： H01L21/302
CPC分类号： H01L27/1021 , H01L21/76802 , H01L21/76829 , Y10S438/90
摘要： A substantially planar surface coexposes conductive or semiconductor features and a dielectric etch stop material. In a preferred embodiment, the conductive or semiconductor features are pillars forming vertically oriented diodes. A second dielectric material, different from the dielectric etch stop material, is deposited on the substantially planar surface. A selective etch etches a hole or trench in the second dielectric material, so that the etch stops on the conductive or semiconductor feature and the dielectric etch stop material. In a preferred embodiment the substantially planar surface is formed by filling gaps between the conductive or semiconductor features with a first dielectric such as oxide, recessing the oxide, filling with a second dielectric such as nitride, then planarizing to coexpose the nitride and the conductive or semiconductor features.
摘要翻译：基本平坦的表面共同导电或半导体特征和介电蚀刻停止材料。在优选实施例中，导电或半导体特征是形成垂直取向的二极管的柱。不同于介电蚀刻停止材料的第二电介质材料沉积在基本平坦的表面上。选择性蚀刻蚀刻第二介电材料中的孔或沟槽，使得蚀刻停止在导电或半导体特征和电介质蚀刻停止材料上。在优选实施例中，通过将导电或半导体特征之间的间隙填充到诸如氧化物的第一电介质，使氧化物凹陷，用第二电介质（例如氮化物）填充，然后平坦化以共存氮化物和导电或半导体功能。

7. 发明授权

US06649451B1 Structure and method for wafer comprising dielectric and semiconductor 失效
标题翻译：包括电介质和半导体的晶片的结构和方法
公开(公告)号：US06649451B1
公开(公告)日：2003-11-18
申请号：US09776000
申请日：2001-02-02
申请人： Michael A. Vyvoda , James M. Cleeves , Calvin K. Li , Samuel V. Dunton
发明人： Michael A. Vyvoda , James M. Cleeves , Calvin K. Li , Samuel V. Dunton
IPC分类号： H01L2182
CPC分类号： H01L21/76224 , H01L21/76819 , H01L23/5254 , H01L27/10 , H01L2924/0002 , H01L2924/00
摘要： Wafers of the present invention comprise a semiconductor layer and a dielectric layer. The semiconductor layer is patterned to form semiconductor regions, and the dielectric layer is deposited on top of the semiconductor layer. Chemical mechanical planarization (CMP) is performed to remove a portion of the dielectric layer, exposing the upper surfaces of the semiconductor regions. The amount of CMP necessary to expose all of the semiconductor regions on the wafer is reduced, because the dielectric is targeted to deposit up to the upper edge of the semiconductor regions in the spaces in between the semiconductor regions. This technique reduces non-uniformities in the thickness of the dielectric and semiconductor layers across the wafer. The thickness of the dielectric or semiconductor layer deposited on polish monitor pads located at the edges of each die may be monitored to determine when enough CMP has been performed to expose each of the semiconductor regions.
摘要翻译：本发明的晶片包括半导体层和电介质层。图案化半导体层以形成半导体区域，并且电介质层沉积在半导体层的顶部上。执行化学机械平面化（CMP）以去除电介质层的一部分，暴露半导体区域的上表面。由于电介质被靶向沉积到半导体区域之间的空间中的半导体区域的上边缘，因此减小了使晶片上的所有半导体区域露出所需的CMP量。该技术降低了跨晶片的电介质层和半导体层的厚度的不均匀性。可以监测沉积在位于每个管芯边缘的抛光监测器焊盘上的电介质层或半导体层的厚度，以确定何时已经执行了足够的CMP来暴露每个半导体区域。

8. 发明授权

US06319836B1 Planarization system 有权
公开(公告)号：US06319836B1
公开(公告)日：2001-11-20
申请号：US09669979
申请日：2000-09-26
申请人： Samuel V. Dunton , Ming-Yi Lee
发明人： Samuel V. Dunton , Ming-Yi Lee
IPC分类号： H01L21302
CPC分类号： H01L21/31053
摘要： A method for planarizing an integrated circuit. The integrated circuit is to be planarized to an upper surface using chemical mechanical polishing. The upper surface of the integrated circuit includes regions of a first material and regions of a second material. The first material has a first polishing rate and desired chemical, physical, and electrical properties. The second material has a second polishing rate and desired chemical, physical, and electrical properties. The first polishing rate is greater than the second polishing rate. The regions of the first material adjoin the regions of the second material at interfaces. The upper surface of the integrated circuit is overlaid with a top layer of the second material, that is to be removed by the chemical mechanical polishing. Both the regions of the second material and the top layer of the second material are deposited during a deposition. The upper surface of the integrated circuit tends to form deleterious tapers at the interfaces between the first material and the second material when the chemical mechanical polishing is taken past a desired end point. The improvement comprises modifying the second material to increase the second polishing rate by adding a dopant to the second material prior to planarizing the integrated circuit. The dopant does not significantly adversely affect either the desired chemical, physical, and electrical properties of the second material, or the desired chemical, physical, and electrical properties of the first material. Thus, by modifying the second polishing rate of the second material, the difference in polishing rates between the first material and the second material is reduced, and the deleterious tapers in the top surface, which are caused at least in part by over polishing a surface that has regions of different materials that have different polishing rates, tend to be eliminated or dramatically reduced, depending at least in part upon how closely the second polishing rate is matched to the first polishing rate by the modification of the second material.

9. 发明授权

US07790607B2 Method for reducing dielectric overetch using a dielectric etch stop at a planar surface 有权
标题翻译：在平坦表面使用电介质蚀刻停止来减少介电过程的方法
公开(公告)号：US07790607B2
公开(公告)日：2010-09-07
申请号：US11923687
申请日：2007-10-25
申请人： Samuel V. Dunton , Usha Raghuram , Christopher J. Petti
发明人： Samuel V. Dunton , Usha Raghuram , Christopher J. Petti
IPC分类号： H01L21/4763
CPC分类号： H01L27/1021 , H01L21/76802 , H01L21/76829 , Y10S438/90
摘要： A substantially planar surface coexposes conductive or semiconductor features and a dielectric etch stop material. A second dielectric material, different from the dielectric etch stop material, is deposited on the substantially planar surface. A selective etch etches a hole or trench in the second dielectric material, so that the etch stops on the conductive or semiconductor feature and the dielectric etch stop material. In a preferred embodiment the substantially planar surface is formed by filling gaps between the conductive or semiconductor features with a first dielectric such as oxide, recessing the oxide, filling with a second dielectric such as nitride, then planarizing to coexpose the nitride and the conductive or semiconductor features.
摘要翻译：基本平坦的表面共同导电或半导体特征和介电蚀刻停止材料。不同于介电蚀刻停止材料的第二电介质材料沉积在基本平坦的表面上。选择性蚀刻蚀刻第二介电材料中的孔或沟槽，使得蚀刻停止在导电或半导体特征和电介质蚀刻停止材料上。在优选实施例中，通过将导电或半导体特征之间的间隙填充到诸如氧化物的第一电介质，使氧化物凹陷，用第二电介质（例如氮化物）填充，然后平坦化以共存氮化物和导电或半导体功能。

10. 发明申请

US20090273022A1 CONDUCTIVE HARD MASK TO PROTECT PATTERNED FEATURES DURING TRENCH ETCH 审中-公开
标题翻译：导电硬掩模，以保护在TRENCH ETCH期间的图案特征
公开(公告)号：US20090273022A1
公开(公告)日：2009-11-05
申请号：US12502796
申请日：2009-07-14
申请人： Steven J. Radigan , Usha Raghuram , Samuel V. Dunton , Michael W. Konevecki
发明人： Steven J. Radigan , Usha Raghuram , Samuel V. Dunton , Michael W. Konevecki
IPC分类号： H01L27/105 , H01L21/8234 , H01L21/822 , H01L27/06
CPC分类号： H01L23/5252 , H01L27/1021 , H01L29/6609 , H01L2924/0002 , H01L2924/00
摘要： A monolithic three dimensional memory array is formed by a method that includes forming a first memory level above a substrate by i) forming a plurality of first substantially parallel conductors extending in a first direction, ii) forming first pillars above the first conductors, each first pillar comprising a first conductive layer or layerstack above a vertically oriented diode, the first pillars formed in a single photolithography step, iii) depositing a first dielectric layer above the first pillars, and iv) etching a plurality of substantially parallel first trenches in the first dielectric layer, the first trenches extending in a second direction, wherein, after the etching step, the lowest point in the trenches is above the lowest point of the first conductive layer or layerstack, wherein the first conductive layer or layerstack does not comprise a resistivity-switching metal oxide or nitride. The method also includes monolithically forming a second memory level above the first memory level. Other aspects are also described.
摘要翻译：单片三维存储器阵列通过一种方法形成，该方法包括通过在第一方向上形成多个沿第一方向延伸的多个第一基本上平行的导体形成第一存储器电平，ii）在第一导体上方形成第一柱，柱，其包括在垂直取向的二极管上方的第一导电层或层堆叠，在单个光刻步骤中形成的第一柱，iii）在第一柱上方沉积第一电介质层，以及iv）在第一栅极中蚀刻多个基本上平行的第一沟槽所述第一沟槽在第二方向上延伸，其中在所述蚀刻步骤之后，所述沟槽中的最低点高于所述第一导电层或层堆叠的最低点，其中所述第一导电层或所述层堆叠不包含电阻率开关金属氧化物或氮化物。该方法还包括在第一存储器级上方单片地形成第二存储器级。还描述了其他方面。

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