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1. 发明专利

JP2934579B2 失效
公开(公告)号：JP2934579B2
公开(公告)日：1999-08-16
申请号：JP5860394
申请日：1994-03-29
申请人： MITSUBISHI JUKOGYO KK , SUTAAROI SANGYO KK
发明人： YAMAMOTO YUTAKA , HYODO KAZUYA , OKAMOTO KAZUYUKI , MOTONAMI SHIGERU
IPC分类号： E21D9/087 , B23B27/14 , E21D9/08

2. 发明专利

JPH0514013B2 失效
公开(公告)号：JPH0514013B2
公开(公告)日：1993-02-24
申请号：JP1067385
申请日：1985-01-22
申请人： SUTAAROI SANGYO KK
发明人： OOTSUKA NOBUO
IPC分类号： C22B23/00 , B01D11/04 , C01G51/00 , C22B3/32 , C22C23/04
摘要： A coblat recovery method comprising a step of selectively shifting cobalt ion into an extraction agent mainly composed of either 2-ethyl hexylphosphonate mono-2-ethyl hexylester or di-2 ethyl hexylphosphate in order to extract and separate cobalt from a solution containing cobalt salts, a step of stripping cobalt into an aqueous solution of oxalic acid by bringing the extraction agent containing cobalt into contact with the aqueous solution of oxalic acid after the separation from nickel ion, sodium salt, calcium salt, etc., and a step of recovering cobalt oxalate which does not contain any other salt.

3. 发明专利

JP2522560B2 失效
公开(公告)号：JP2522560B2
公开(公告)日：1996-08-07
申请号：JP27428089
申请日：1989-10-21
申请人： KOGYO GIJUTSU INCHO , SUTAAROI SANGYO KK
发明人： SATO MAMORU , TOKUMARU YOZO , SHIMOITANI YOSHINOBU
IPC分类号： C01B21/076 , C01B21/072 , C23C14/48 , H01L21/203 , H01L21/265

4. 发明专利

JPH07269293A CUTTER BIT 失效
公开(公告)号：JPH07269293A
公开(公告)日：1995-10-17
申请号：JP5860394
申请日：1994-03-29
申请人： MITSUBISHI HEAVY IND LTD , SUTAAROI SANGYO KK
发明人： YAMAMOTO YUTAKA , HYODO KAZUYA , OKAMOTO KAZUYUKI , MOTONAMI SHIGERU
IPC分类号： E21D9/087 , B23B27/14 , E21D9/08
摘要： PURPOSE:To enhance durability by defining the material of a cemented carbide tip for both ends of cutter bits as low hardness and high toughness out of cemented carbide tips installed in parallel to cutter bits and the material of a cemented carbide tip in the central part as high hardness and high toughness. CONSTITUTION:A tip mounting recessed part 14 is formed on the tip of a sheet- like base metal 13 which constitutes a mounting part of the base end. A plurality of cemented carbide tips 15, 16, 17 and 18 are fixed with the tip mounting recessed part 14 by brazing 16 in such a state that they may line up breadthwise. To braze with the tips 15 ad 18 on both ends, there is adopted a material having a low hardness and high toughness out of the cemented carbide tips 15, 16, 17 and 18. Then, when excavating a hard ground or the like by mounting a cutter bit 11 to a cutter head of a shield driving machine, a face pressure exerting on the chips 15 and 18 on both ends is reduced, thereby protecting the chips 15 and 18 from being damaged. Although the tips 15 and 18 are subjected to wear out during excavation work, the properties of the hardness and high toughness tips 16 and 17 prevents a drop in their wearing properties.

5. 发明专利

JPH02307631A FORMING DIE AND ITS MANUFACTURE 失效
公开(公告)号：JPH02307631A
公开(公告)日：1990-12-20
申请号：JP12764889
申请日：1989-05-19
申请人： SUTAAROI SANGYO KK
发明人： SHIMOITANI YOSHINOBU
IPC分类号： B21D28/14 , B21D37/01 , B21D37/20 , C23C14/06 , C23C14/16 , C23C14/22 , C23C14/32 , C23C14/48
摘要： PURPOSE:To obtain the forming die having high accuracy and strength, and also, having a long service life by forming a mixing layer formed on the surface of the forming die for abutting on a work by the relation of a prescribed expression. CONSTITUTION:A mixing layer is formed on the surface of a forming die by executing simultaneously implantation of an ion and vacuum vapor deposition by the relation of an expression 10X ) of the ion, and the vapor deposition quantity (vapor deposition speed ; Angstrom /sic) of a metallic element, respectively, and accordingly, a surface layer being excellent in wear resistance can be provided. Moreover, on its surface layer, a metal or an intermetallic compound by the ion is formed by being brought to mixing integrally with a material substrate, therefore, a die of high strength in which the surface layer does not peel off even under a severe dynamic pressure condition.

6. 发明专利

JPH02155531A FORGING DIE AND ITS MANUFACTURE 失效
公开(公告)号：JPH02155531A
公开(公告)日：1990-06-14
申请号：JP31048988
申请日：1988-12-07
申请人： AGENCY IND SCIENCE TECHN , SUTAAROI SANGYO KK
发明人： SATO MAMORU , FUJII KANESHIGE , KIUCHI MASATO , CHIYAYAHARA AKIYOSHI , SHIMOIDANI YOSHINOBU , TERAO NOBUO
IPC分类号： B21J13/02 , C23C14/06 , C23C14/14 , C23C14/16
摘要： PURPOSE:To obtain the forging die being endurable against a severe dynamic high load, having high strength, and also, being excellent in productivity by forming a mixing layer provided with an amorphous metallic layer by a dynamic mixing method on the surface which comes into contact with an object to be worked. CONSTITUTION:A die 1 is constituted of a combined die consisting of a male die (punch side) 1a and a female die 1b, and a steel wire pipe which is cut by a header machine is placed between both the dies as a taper roller use stock 2 being an object to be worked. Especially, to the corner part, a sever dynamic load is applied, and damage such as a crack, a chip, etc., is apt to be generated, therefore, an ion implantation is executed to a part in which the stock 2 and the die come into contact with each other as well as the corner part, and a mixing layer 3 which is brought to mixing is formed. In such a way, the strength becomes high, and the productivity can be improved.

7. 发明专利

JPH0572516B2 失效
公开(公告)号：JPH0572516B2
公开(公告)日：1993-10-12
申请号：JP22653689
申请日：1989-08-31
申请人： OKUMURA KIKAI SEISAKUSHO KK , SUTAAROI SANGYO KK
发明人： ONO JUNJI , SHIMOITANI YOSHINOBU
IPC分类号： E21B10/46 , E21B10/12 , E21D9/08 , E21D9/087 , E21D9/10

8. 发明专利

JPH03136235A FORMATION OF P-N JUNCTION 失效
公开(公告)号：JPH03136235A
公开(公告)日：1991-06-11
申请号：JP27428089
申请日：1989-10-21
申请人： AGENCY IND SCIENCE TECHN , SUTAAROI SANGYO KK
发明人： SATO MAMORU , TOKUMARU YOZO , SHIMOIYA YOSHINOBU
IPC分类号： C01B21/076 , C01B21/072 , C23C14/48 , H01L21/203 , H01L21/265
摘要： PURPOSE:To form a uniform mixing layer on the surface of an Si wafer or the like and to form an electrically stable and superior thin film type N-type semiconductor to form a P-N junction by a method wherein a thin film type N-type semiconductor layer is formed on the surface of the P-type semiconductor by performing simultaneous ly an ion implantation and a vacuum deposition. CONSTITUTION:A thin film type N-type semiconductor layer is formed on the surface of a P-type semiconductor 7 by performing simultaneously an ion implantation and a vacuum, deposition. For example, an ionimplantation device is used as shown in the diagram, the P-type Si wafer single crystal 7 subjected to an ultrasonic cleaning is placed on a sample stand 17 toward the direction of an ion implantation and after the interior of the device is hermetically sealed, the interior is evacuated by a turbo- molecular pump up to reach 5X10 Torr or thereabouts. Then, in order to remove gaseous molecules being occluded in Al which is a deposition substance, Al placed on a deposition device 11 is preheated as a shutter is put up on the substrate 7. After that, while the amount of deposition of Al and the amount of N ions are respectively adjusted by a film thickness meter 12 and a current integrating meter 19, the shutter is opened to execute a mixing treatment and an AIN thin film is formed on the wafer 7.

9. 发明专利

JPH02156070A METALLIC MOLD FOR CASTING AND PRODUCTION THEREOF 失效
公开(公告)号：JPH02156070A
公开(公告)日：1990-06-15
申请号：JP31067788
申请日：1988-12-08
申请人： AGENCY IND SCIENCE TECHN , SUTAAROI SANGYO KK
发明人： SATO MAMORU , FUJII KANESHIGE , KIUCHI MASATO , CHIYAYAHARA AKIYOSHI , SHIMOIDANI YOSHINOBU , TERAO NOBUO
IPC分类号： B21J13/02 , C23C14/06 , C23C14/08
摘要： PURPOSE:To obtain the high-strength metallic mold which withstands even severe dynamic high load with good productivity by providing a layer mixed with >=1 kinds of ions of group III to VI and VIII elements of periodic table on the surface in contact with a work. CONSTITUTION:The part which first comes into contact with a stock 2 in the corner parts of the metallic mold consisting of a male mold 1a and a female mold 1b for producing, for example, a tapered roller for a tapered roller bearing by cold forging of the stock 2 is formed with the mixing layer 3 by executing ion plantation. The method for forming the layer 3 is, for example, a dynamic mixing method or ion vapor phase deposition method. Vacuum vapor deposition and the ion implantation are simultaneously executed by using the ion acceleration energy lower than in an ordinary ion implantation method. The elements belonging to group III to VI and VIII, such as TiN, TaC, TiC, VC, BN, TiN, and Fe2N, are used alone or in combination of >=2 kinds as the ion species to be mixed.

10. 发明专利

JPS60250193A CUTTER BIT OF EARTH AUGER 失效
公开(公告)号：JPS60250193A
公开(公告)日：1985-12-10
申请号：JP10548284
申请日：1984-05-23
申请人： SUTAAROI SANGYO KK , HORYO SANGYO KK
发明人： MOURI TOYOSHIGE
IPC分类号： E21B10/44

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